JP2009538536A - 固体発光デバイス、および、それを製造する方法 - Google Patents
固体発光デバイス、および、それを製造する方法 Download PDFInfo
- Publication number
- JP2009538536A JP2009538536A JP2009512155A JP2009512155A JP2009538536A JP 2009538536 A JP2009538536 A JP 2009538536A JP 2009512155 A JP2009512155 A JP 2009512155A JP 2009512155 A JP2009512155 A JP 2009512155A JP 2009538536 A JP2009538536 A JP 2009538536A
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- layer structure
- light emitting
- lumiphor
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80892506P | 2006-05-26 | 2006-05-26 | |
| PCT/US2007/012403 WO2007139894A2 (en) | 2006-05-26 | 2007-05-24 | Solid state light emitting device and method of making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009538536A true JP2009538536A (ja) | 2009-11-05 |
| JP2009538536A5 JP2009538536A5 (enExample) | 2012-06-07 |
Family
ID=38779219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009512155A Pending JP2009538536A (ja) | 2006-05-26 | 2007-05-24 | 固体発光デバイス、および、それを製造する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8008676B2 (enExample) |
| EP (1) | EP2033235B1 (enExample) |
| JP (1) | JP2009538536A (enExample) |
| TW (1) | TWI425652B (enExample) |
| WO (1) | WO2007139894A2 (enExample) |
Families Citing this family (102)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7521667B2 (en) | 2003-06-23 | 2009-04-21 | Advanced Optical Technologies, Llc | Intelligent solid state lighting |
| US7145125B2 (en) | 2003-06-23 | 2006-12-05 | Advanced Optical Technologies, Llc | Integrating chamber cone light using LED sources |
| US7355284B2 (en) * | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
| US20060097385A1 (en) * | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
| US8125137B2 (en) | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
| US7564180B2 (en) | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
| US8278846B2 (en) | 2005-11-18 | 2012-10-02 | Cree, Inc. | Systems and methods for calibrating solid state lighting panels |
| US8514210B2 (en) | 2005-11-18 | 2013-08-20 | Cree, Inc. | Systems and methods for calibrating solid state lighting panels using combined light output measurements |
| US7872430B2 (en) * | 2005-11-18 | 2011-01-18 | Cree, Inc. | Solid state lighting panels with variable voltage boost current sources |
| JP5166278B2 (ja) * | 2005-11-18 | 2013-03-21 | クリー インコーポレイテッド | 固体素子照明タイル |
| CN103925521A (zh) | 2005-12-21 | 2014-07-16 | 科锐公司 | 照明装置 |
| BRPI0620413A2 (pt) | 2005-12-21 | 2011-11-08 | Cree Led Lighting Solutions | dispositivo de iluminação e método de iluminação |
| EP1969633B1 (en) | 2005-12-22 | 2018-08-29 | Cree, Inc. | Lighting device |
| US8441179B2 (en) | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
| US7821194B2 (en) | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
| US9084328B2 (en) | 2006-12-01 | 2015-07-14 | Cree, Inc. | Lighting device and lighting method |
| US8998444B2 (en) | 2006-04-18 | 2015-04-07 | Cree, Inc. | Solid state lighting devices including light mixtures |
| TWI460880B (zh) | 2006-04-18 | 2014-11-11 | Cree Inc | 照明裝置及照明方法 |
| US8513875B2 (en) | 2006-04-18 | 2013-08-20 | Cree, Inc. | Lighting device and lighting method |
| EP2008019B1 (en) | 2006-04-20 | 2015-08-05 | Cree, Inc. | Lighting device and lighting method |
| US8008676B2 (en) | 2006-05-26 | 2011-08-30 | Cree, Inc. | Solid state light emitting device and method of making same |
| BRPI0712439B1 (pt) | 2006-05-31 | 2019-11-05 | Cree, Inc. | dispositivo de iluminação e método de iluminação |
| US7665862B2 (en) * | 2006-09-12 | 2010-02-23 | Cree, Inc. | LED lighting fixture |
| US7766508B2 (en) | 2006-09-12 | 2010-08-03 | Cree, Inc. | LED lighting fixture |
| CA2666343A1 (en) | 2006-10-23 | 2008-05-02 | Cree Led Lighting Solutions, Inc. | Lighting devices and methods of installing light engine housings and/or trim elements in lighting device housings |
| US8029155B2 (en) | 2006-11-07 | 2011-10-04 | Cree, Inc. | Lighting device and lighting method |
| TWI496315B (zh) | 2006-11-13 | 2015-08-11 | Cree Inc | 照明裝置、被照明的殼體及照明方法 |
| CN101611258A (zh) | 2006-11-14 | 2009-12-23 | 科锐Led照明科技公司 | 光引擎组件 |
| US8439531B2 (en) * | 2006-11-14 | 2013-05-14 | Cree, Inc. | Lighting assemblies and components for lighting assemblies |
| US7901111B2 (en) | 2006-11-30 | 2011-03-08 | Cree, Inc. | Lighting device and lighting method |
| US9441793B2 (en) | 2006-12-01 | 2016-09-13 | Cree, Inc. | High efficiency lighting device including one or more solid state light emitters, and method of lighting |
| WO2008070607A1 (en) | 2006-12-04 | 2008-06-12 | Cree Led Lighting Solutions, Inc. | Lighting assembly and lighting method |
| CN101611259B (zh) | 2006-12-07 | 2012-06-27 | 科锐公司 | 照明装置和照明方法 |
| US8258682B2 (en) | 2007-02-12 | 2012-09-04 | Cree, Inc. | High thermal conductivity packaging for solid state light emitting apparatus and associated assembling methods |
| US20080198572A1 (en) | 2007-02-21 | 2008-08-21 | Medendorp Nicholas W | LED lighting systems including luminescent layers on remote reflectors |
| WO2008103876A1 (en) | 2007-02-22 | 2008-08-28 | Cree Led Lighting Solutions, Inc. | Lighting devices, methods of lighting, light filters and methods of filtering light |
| US7638811B2 (en) * | 2007-03-13 | 2009-12-29 | Cree, Inc. | Graded dielectric layer |
| TWI334660B (en) * | 2007-03-21 | 2010-12-11 | Lextar Electronics Corp | Surface mount type light emitting diode package device and light emitting element package device |
| US7824070B2 (en) | 2007-03-22 | 2010-11-02 | Cree, Inc. | LED lighting fixture |
| TW200912202A (en) | 2007-05-08 | 2009-03-16 | Cree Led Lighting Solutions | Lighting device and lighting method |
| TW200912204A (en) | 2007-05-08 | 2009-03-16 | Cree Led Lighting Solutions | Lighting device and lighting method |
| CN101688644B (zh) | 2007-05-08 | 2011-06-15 | 科锐Led照明科技公司 | 照明装置及照明方法 |
| TWI422785B (zh) | 2007-05-08 | 2014-01-11 | 克里公司 | 照明裝置及照明方法 |
| US8049709B2 (en) | 2007-05-08 | 2011-11-01 | Cree, Inc. | Systems and methods for controlling a solid state lighting panel |
| EP2153113B1 (en) | 2007-05-08 | 2016-01-06 | Cree, Inc. | Lighting device and lighting method |
| CN101680604B (zh) | 2007-05-08 | 2013-05-08 | 科锐公司 | 照明装置和照明方法 |
| US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
| KR101722265B1 (ko) | 2007-10-10 | 2017-03-31 | 크리, 인코포레이티드 | 조명 장치 및 그 제조 방법 |
| US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
| US8350461B2 (en) | 2008-03-28 | 2013-01-08 | Cree, Inc. | Apparatus and methods for combining light emitters |
| US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
| US8445824B2 (en) * | 2008-10-24 | 2013-05-21 | Cree, Inc. | Lighting device |
| US8858032B2 (en) * | 2008-10-24 | 2014-10-14 | Cree, Inc. | Lighting device, heat transfer structure and heat transfer element |
| US10197240B2 (en) * | 2009-01-09 | 2019-02-05 | Cree, Inc. | Lighting device |
| US8333631B2 (en) | 2009-02-19 | 2012-12-18 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
| US7967652B2 (en) | 2009-02-19 | 2011-06-28 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
| US8950910B2 (en) | 2009-03-26 | 2015-02-10 | Cree, Inc. | Lighting device and method of cooling lighting device |
| US8337030B2 (en) | 2009-05-13 | 2012-12-25 | Cree, Inc. | Solid state lighting devices having remote luminescent material-containing element, and lighting methods |
| US9841162B2 (en) | 2009-05-18 | 2017-12-12 | Cree, Inc. | Lighting device with multiple-region reflector |
| US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
| US8716952B2 (en) | 2009-08-04 | 2014-05-06 | Cree, Inc. | Lighting device having first, second and third groups of solid state light emitters, and lighting arrangement |
| US8648546B2 (en) * | 2009-08-14 | 2014-02-11 | Cree, Inc. | High efficiency lighting device including one or more saturated light emitters, and method of lighting |
| US9605844B2 (en) | 2009-09-01 | 2017-03-28 | Cree, Inc. | Lighting device with heat dissipation elements |
| US8901845B2 (en) | 2009-09-24 | 2014-12-02 | Cree, Inc. | Temperature responsive control for lighting apparatus including light emitting devices providing different chromaticities and related methods |
| US10264637B2 (en) | 2009-09-24 | 2019-04-16 | Cree, Inc. | Solid state lighting apparatus with compensation bypass circuits and methods of operation thereof |
| US9713211B2 (en) | 2009-09-24 | 2017-07-18 | Cree, Inc. | Solid state lighting apparatus with controllable bypass circuits and methods of operation thereof |
| WO2011037877A1 (en) | 2009-09-25 | 2011-03-31 | Cree, Inc. | Lighting device with low glare and high light level uniformity |
| US9353933B2 (en) | 2009-09-25 | 2016-05-31 | Cree, Inc. | Lighting device with position-retaining element |
| WO2011037882A2 (en) | 2009-09-25 | 2011-03-31 | Cree, Inc. | Lighting device having heat dissipation element |
| JP5543884B2 (ja) | 2009-09-25 | 2014-07-09 | パナソニック株式会社 | 波長変換粒子およびそれを用いた波長変換部材ならびに発光装置 |
| US9068719B2 (en) | 2009-09-25 | 2015-06-30 | Cree, Inc. | Light engines for lighting devices |
| US9464801B2 (en) | 2009-09-25 | 2016-10-11 | Cree, Inc. | Lighting device with one or more removable heat sink elements |
| US8602579B2 (en) | 2009-09-25 | 2013-12-10 | Cree, Inc. | Lighting devices including thermally conductive housings and related structures |
| US9285103B2 (en) | 2009-09-25 | 2016-03-15 | Cree, Inc. | Light engines for lighting devices |
| WO2011037876A1 (en) | 2009-09-25 | 2011-03-31 | Cree, Inc. | Lighting device having heat dissipation element |
| US8777449B2 (en) | 2009-09-25 | 2014-07-15 | Cree, Inc. | Lighting devices comprising solid state light emitters |
| US9217542B2 (en) | 2009-10-20 | 2015-12-22 | Cree, Inc. | Heat sinks and lamp incorporating same |
| US9030120B2 (en) | 2009-10-20 | 2015-05-12 | Cree, Inc. | Heat sinks and lamp incorporating same |
| US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
| US8604461B2 (en) * | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
| US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
| US8508116B2 (en) | 2010-01-27 | 2013-08-13 | Cree, Inc. | Lighting device with multi-chip light emitters, solid state light emitter support members and lighting elements |
| US9518715B2 (en) | 2010-02-12 | 2016-12-13 | Cree, Inc. | Lighting devices that comprise one or more solid state light emitters |
| CN102844619B (zh) | 2010-02-12 | 2016-12-28 | 科锐公司 | 具有散热件的照明设备 |
| US8773007B2 (en) | 2010-02-12 | 2014-07-08 | Cree, Inc. | Lighting devices that comprise one or more solid state light emitters |
| EP2534407A2 (en) | 2010-02-12 | 2012-12-19 | Cree, Inc. | Lighting devices that comprise one or more solid state light emitters |
| US9175811B2 (en) | 2010-02-12 | 2015-11-03 | Cree, Inc. | Solid state lighting device, and method of assembling the same |
| US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
| US8476836B2 (en) | 2010-05-07 | 2013-07-02 | Cree, Inc. | AC driven solid state lighting apparatus with LED string including switched segments |
| US8684559B2 (en) | 2010-06-04 | 2014-04-01 | Cree, Inc. | Solid state light source emitting warm light with high CRI |
| US9648673B2 (en) | 2010-11-05 | 2017-05-09 | Cree, Inc. | Lighting device with spatially segregated primary and secondary emitters |
| US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
| US8908261B2 (en) * | 2011-01-26 | 2014-12-09 | Massachusetts Institute Of Technology | Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film |
| US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
| US9839083B2 (en) | 2011-06-03 | 2017-12-05 | Cree, Inc. | Solid state lighting apparatus and circuits including LED segments configured for targeted spectral power distribution and methods of operating the same |
| US8742671B2 (en) | 2011-07-28 | 2014-06-03 | Cree, Inc. | Solid state lighting apparatus and methods using integrated driver circuitry |
| US9151457B2 (en) | 2012-02-03 | 2015-10-06 | Cree, Inc. | Lighting device and method of installing light emitter |
| US9151477B2 (en) | 2012-02-03 | 2015-10-06 | Cree, Inc. | Lighting device and method of installing light emitter |
| US9279946B2 (en) * | 2012-05-23 | 2016-03-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Premolded cavity for optoelectronic device |
| DE102012106984A1 (de) * | 2012-07-31 | 2014-02-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
| CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
| JP6518936B2 (ja) * | 2014-11-14 | 2019-05-29 | パナソニックIpマネジメント株式会社 | 部品実装装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08102549A (ja) * | 1994-09-30 | 1996-04-16 | Rohm Co Ltd | 半導体発光素子 |
| JP2006128296A (ja) * | 2004-10-27 | 2006-05-18 | Kyocera Corp | 発光素子およびそれを用いた照明装置 |
Family Cites Families (198)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1136218A (en) | 1965-12-14 | 1968-12-11 | Standard Telephones Cables Ltd | Improvements in or relating to the manufacture of semiconductor optical devices |
| FR1536293A (fr) | 1967-06-22 | 1968-08-16 | Citroen Sa Andre | Perfectionnements apportés à l'aménagement du groupe moteur d'un véhicule automobile |
| JPS48102585A (enExample) | 1972-04-04 | 1973-12-22 | ||
| US3927290A (en) | 1974-11-14 | 1975-12-16 | Teletype Corp | Selectively illuminated pushbutton switch |
| US4152044A (en) * | 1977-06-17 | 1979-05-01 | International Telephone And Telegraph Corporation | Galium aluminum arsenide graded index waveguide |
| JPS5517180A (en) | 1978-07-24 | 1980-02-06 | Handotai Kenkyu Shinkokai | Light emitting diode display |
| JPS5722581Y2 (enExample) | 1979-08-21 | 1982-05-17 | ||
| US4476620A (en) | 1979-10-19 | 1984-10-16 | Matsushita Electric Industrial Co., Ltd. | Method of making a gallium nitride light-emitting diode |
| US4427213A (en) | 1982-01-21 | 1984-01-24 | Raidel Jr John E | Vehicle suspension with rigid torque beam |
| NL8301824A (nl) | 1983-05-24 | 1984-12-17 | Philips Nv | Optisch element bestaande uit een doorzichtig substraat en een antireflectieve bekleding voor het golflengtegebied in het nabije infrarood. |
| US4566719A (en) | 1984-02-17 | 1986-01-28 | Turner Quick Lift Corporation | Spaced axle-to-beam connection for suspension of the rigid beam type |
| JPS6196780A (ja) * | 1984-10-17 | 1986-05-15 | Stanley Electric Co Ltd | Ledチツプのコ−テイング方法 |
| US4583822A (en) | 1984-10-31 | 1986-04-22 | Rockwell International Corporation | Quintic refractive index profile antireflection coatings |
| US4890150A (en) | 1985-12-05 | 1989-12-26 | North American Philips Corporation | Dielectric passivation |
| US5002305A (en) | 1987-02-04 | 1991-03-26 | Raidel John E | Vehicle suspension system with standardized torque beam and special monopivot bushing assembly |
| US4934788A (en) | 1987-03-20 | 1990-06-19 | Rockwell International Corporation | Deposition of gradient index coatings using coevaporation with rate control |
| US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
| US4981551A (en) | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
| US4865685A (en) | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
| JPH0770755B2 (ja) | 1988-01-21 | 1995-07-31 | 三菱化学株式会社 | 高輝度led用エピタキシャル基板及びその製造方法 |
| US5880510A (en) | 1988-05-11 | 1999-03-09 | Raytheon Company | Graded layer passivation of group II-VI infrared photodetectors |
| US4912532A (en) | 1988-08-26 | 1990-03-27 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
| US4918497A (en) | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
| US5027168A (en) | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
| US4918487A (en) | 1989-01-23 | 1990-04-17 | Coulter Systems Corporation | Toner applicator for electrophotographic microimagery |
| US5087949A (en) | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
| US4966862A (en) | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
| US5100233A (en) | 1989-09-22 | 1992-03-31 | Rockwell International Corporation | Refractive index monitor for deposition of gradient-index films |
| US5103271A (en) | 1989-09-28 | 1992-04-07 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method of fabricating the same |
| US4946547A (en) | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
| US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
| US5037126A (en) | 1990-09-07 | 1991-08-06 | The Boler Company | Lightweight beam suspension system |
| US5200022A (en) | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
| US5225244A (en) | 1990-12-17 | 1993-07-06 | Allied-Signal Inc. | Polymeric anti-reflection coatings and coated articles |
| US5127668A (en) | 1991-01-24 | 1992-07-07 | Raidel John E | Torque beam with clamped mono-pivot bushing and flexible axle seat |
| US5234748A (en) | 1991-06-19 | 1993-08-10 | Ford Motor Company | Anti-reflective transparent coating with gradient zone |
| US5472827A (en) | 1991-12-30 | 1995-12-05 | Sony Corporation | Method of forming a resist pattern using an anti-reflective layer |
| US5264997A (en) | 1992-03-04 | 1993-11-23 | Dominion Automotive Industries Corp. | Sealed, inductively powered lamp assembly |
| CA2096551A1 (en) | 1992-05-22 | 1993-11-23 | Masanori Nishiguchi | Semiconductor device |
| US5298767A (en) | 1992-10-06 | 1994-03-29 | Kulite Semiconductor Products, Inc. | Porous silicon carbide (SiC) semiconductor device |
| US5376580A (en) | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| DE69425186T3 (de) | 1993-04-28 | 2005-04-14 | Nichia Corp., Anan | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung |
| US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
| US5338944A (en) | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
| US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
| US20010031811A1 (en) | 1993-12-13 | 2001-10-18 | Huawen Li | Durable coating composition, process for producing durable, antireflective coatings, and coated articles |
| JPH08148280A (ja) | 1994-04-14 | 1996-06-07 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2994219B2 (ja) | 1994-05-24 | 1999-12-27 | シャープ株式会社 | 半導体デバイスの製造方法 |
| US5604135A (en) | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
| US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
| US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
| US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
| US5909303A (en) | 1996-01-04 | 1999-06-01 | The Board Of Trustees Of The Leland Stanford Junior University | Optical modulator and optical modulator array |
| US5985687A (en) | 1996-04-12 | 1999-11-16 | The Regents Of The University Of California | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials |
| DE29724582U1 (de) | 1996-06-26 | 2002-07-04 | OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
| TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
| DE19640594B4 (de) | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
| US5783909A (en) | 1997-01-10 | 1998-07-21 | Relume Corporation | Maintaining LED luminous intensity |
| US5939732A (en) | 1997-05-22 | 1999-08-17 | Kulite Semiconductor Products, Inc. | Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof |
| US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
| DE19723176C1 (de) | 1997-06-03 | 1998-08-27 | Daimler Benz Ag | Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung |
| US6292901B1 (en) | 1997-08-26 | 2001-09-18 | Color Kinetics Incorporated | Power/data protocol |
| GB2329238A (en) | 1997-09-12 | 1999-03-17 | Hassan Paddy Abdel Salam | LED light source |
| US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
| DE19755734A1 (de) | 1997-12-15 | 1999-06-24 | Siemens Ag | Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes |
| US6051876A (en) | 1998-01-05 | 2000-04-18 | Advanced Micro Devices, Inc. | Semiconductor device with a graded passivation layer |
| US6071795A (en) | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
| US6236331B1 (en) | 1998-02-20 | 2001-05-22 | Newled Technologies Inc. | LED traffic light intensity controller |
| US6095661A (en) | 1998-03-19 | 2000-08-01 | Ppt Vision, Inc. | Method and apparatus for an L.E.D. flashlight |
| GB9807692D0 (en) | 1998-04-14 | 1998-06-10 | Univ Strathclyde | Optival devices |
| US6225647B1 (en) | 1998-07-27 | 2001-05-01 | Kulite Semiconductor Products, Inc. | Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same |
| US6127784A (en) | 1998-08-31 | 2000-10-03 | Dialight Corporation | LED driving circuitry with variable load to control output light intensity of an LED |
| US5959316A (en) | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
| US6459100B1 (en) | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
| JP3525061B2 (ja) | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
| US6078148A (en) | 1998-10-09 | 2000-06-20 | Relume Corporation | Transformer tap switching power supply for LED traffic signal |
| US6274924B1 (en) | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
| US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
| US6495964B1 (en) | 1998-12-18 | 2002-12-17 | Koninklijke Philips Electronics N.V. | LED luminaire with electrically adjusted color balance using photodetector |
| US6744800B1 (en) | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
| US20010042866A1 (en) | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
| US6320206B1 (en) | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
| US6521916B2 (en) | 1999-03-15 | 2003-02-18 | Gentex Corporation | Radiation emitter device having an encapsulant with different zones of thermal conductivity |
| US6258699B1 (en) | 1999-05-10 | 2001-07-10 | Visual Photonics Epitaxy Co., Ltd. | Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same |
| US6171978B1 (en) | 1999-05-27 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | Method of manufacturing capacitor dielectric |
| US6489637B1 (en) | 1999-06-09 | 2002-12-03 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
| US6465809B1 (en) | 1999-06-09 | 2002-10-15 | Kabushiki Kaisha Toshiba | Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof |
| EP1059668A3 (en) | 1999-06-09 | 2007-07-18 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
| US6153985A (en) | 1999-07-09 | 2000-11-28 | Dialight Corporation | LED driving circuitry with light intensity feedback to control output light intensity of an LED |
| US6335538B1 (en) | 1999-07-23 | 2002-01-01 | Impulse Dynamics N.V. | Electro-optically driven solid state relay system |
| US6504301B1 (en) | 1999-09-03 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Non-incandescent lightbulb package using light emitting diodes |
| JP3723434B2 (ja) | 1999-09-24 | 2005-12-07 | 三洋電機株式会社 | 半導体発光素子 |
| US6357889B1 (en) | 1999-12-01 | 2002-03-19 | General Electric Company | Color tunable light source |
| US6410942B1 (en) | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
| US6350041B1 (en) | 1999-12-03 | 2002-02-26 | Cree Lighting Company | High output radial dispersing lamp using a solid state light source |
| AU4139101A (en) | 1999-12-03 | 2001-06-12 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
| US6566808B1 (en) | 1999-12-22 | 2003-05-20 | General Electric Company | Luminescent display and method of making |
| US6646292B2 (en) | 1999-12-22 | 2003-11-11 | Lumileds Lighting, U.S., Llc | Semiconductor light emitting device and method |
| US6362578B1 (en) | 1999-12-23 | 2002-03-26 | Stmicroelectronics, Inc. | LED driver circuit and method |
| US6285139B1 (en) | 1999-12-23 | 2001-09-04 | Gelcore, Llc | Non-linear light-emitting load current control |
| CN1225801C (zh) | 2000-02-09 | 2005-11-02 | 日本光源股份有限公司 | 光源装置 |
| DE10008583A1 (de) | 2000-02-24 | 2001-09-13 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optisch transparenten Substrates und Verfahren zum Herstellen eines lichtemittierenden Halbleiterchips |
| US6498440B2 (en) | 2000-03-27 | 2002-12-24 | Gentex Corporation | Lamp assembly incorporating optical feedback |
| JP4060511B2 (ja) | 2000-03-28 | 2008-03-12 | パイオニア株式会社 | 窒化物半導体素子の分離方法 |
| DE10020465A1 (de) | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
| US6534346B2 (en) | 2000-05-16 | 2003-03-18 | Nippon Electric Glass Co., Ltd. | Glass and glass tube for encapsulating semiconductors |
| US6737801B2 (en) | 2000-06-28 | 2004-05-18 | The Fox Group, Inc. | Integrated color LED chip |
| US6562648B1 (en) | 2000-08-23 | 2003-05-13 | Xerox Corporation | Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials |
| DE10042947A1 (de) | 2000-08-31 | 2002-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
| JP3466144B2 (ja) | 2000-09-22 | 2003-11-10 | 士郎 酒井 | 半導体の表面を荒くする方法 |
| US6429460B1 (en) | 2000-09-28 | 2002-08-06 | United Epitaxy Company, Ltd. | Highly luminous light emitting device |
| US6650044B1 (en) | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
| JP4091261B2 (ja) | 2000-10-31 | 2008-05-28 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| FI109632B (fi) | 2000-11-06 | 2002-09-13 | Nokia Corp | Valkoinen valaisu |
| WO2002041364A2 (en) | 2000-11-16 | 2002-05-23 | Emcore Corporation | Led packages having improved light extraction |
| US6441558B1 (en) | 2000-12-07 | 2002-08-27 | Koninklijke Philips Electronics N.V. | White LED luminary light control system |
| JP2002182203A (ja) | 2000-12-12 | 2002-06-26 | Nec Corp | 表示装置、その表示方法、およびその製造方法 |
| US6411046B1 (en) | 2000-12-27 | 2002-06-25 | Koninklijke Philips Electronics, N. V. | Effective modeling of CIE xy coordinates for a plurality of LEDs for white LED light control |
| AT410266B (de) | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
| US6624350B2 (en) | 2001-01-18 | 2003-09-23 | Arise Technologies Corporation | Solar power management system |
| JP3887174B2 (ja) | 2001-01-24 | 2007-02-28 | 日本オプネクスト株式会社 | 半導体発光装置 |
| US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| US6510995B2 (en) | 2001-03-16 | 2003-01-28 | Koninklijke Philips Electronics N.V. | RGB LED based light driver using microprocessor controlled AC distributed power system |
| US6468824B2 (en) | 2001-03-22 | 2002-10-22 | Uni Light Technology Inc. | Method for forming a semiconductor device having a metallic substrate |
| US6746889B1 (en) | 2001-03-27 | 2004-06-08 | Emcore Corporation | Optoelectronic device with improved light extraction |
| US6833566B2 (en) | 2001-03-28 | 2004-12-21 | Toyoda Gosei Co., Ltd. | Light emitting diode with heat sink |
| JP2002299699A (ja) | 2001-03-30 | 2002-10-11 | Sumitomo Electric Ind Ltd | 発光装置およびその製造方法 |
| US6576881B2 (en) | 2001-04-06 | 2003-06-10 | Koninklijke Philips Electronics N.V. | Method and system for controlling a light source |
| JP4101468B2 (ja) | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | 発光装置の製造方法 |
| US20020190972A1 (en) | 2001-05-17 | 2002-12-19 | Ven De Van Antony | Display screen performance or content verification methods and apparatus |
| EP1263058B1 (en) | 2001-05-29 | 2012-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting element |
| US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
| US6741351B2 (en) | 2001-06-07 | 2004-05-25 | Koninklijke Philips Electronics N.V. | LED luminaire with light sensor configurations for optical feedback |
| TW564584B (en) | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
| DE10131698A1 (de) | 2001-06-29 | 2003-01-30 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
| TW552726B (en) | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
| US6630801B2 (en) | 2001-10-22 | 2003-10-07 | Lümileds USA | Method and apparatus for sensing the color point of an RGB LED white luminary using photodiodes |
| US7858403B2 (en) | 2001-10-31 | 2010-12-28 | Cree, Inc. | Methods and systems for fabricating broad spectrum light emitting devices |
| US6851834B2 (en) | 2001-12-21 | 2005-02-08 | Joseph A. Leysath | Light emitting diode lamp having parabolic reflector and diffuser |
| US6716654B2 (en) | 2002-03-12 | 2004-04-06 | Opto Tech Corporation | Light-emitting diode with enhanced brightness and method for fabricating the same |
| US7093958B2 (en) | 2002-04-09 | 2006-08-22 | Osram Sylvania Inc. | LED light source assembly |
| US6841947B2 (en) | 2002-05-14 | 2005-01-11 | Garmin At, Inc. | Systems and methods for controlling brightness of an avionics display |
| JP4065530B2 (ja) | 2002-05-22 | 2008-03-26 | キヤノン株式会社 | 反射防止膜、該反射防止膜を有する光学素子及び光学系 |
| US7023543B2 (en) | 2002-08-01 | 2006-04-04 | Cunningham David W | Method for controlling the luminous flux spectrum of a lighting fixture |
| ATE543221T1 (de) | 2002-09-19 | 2012-02-15 | Cree Inc | Leuchtstoffbeschichtete leuchtdioden mit verjüngten seitenwänden und herstellungsverfahren dafür |
| JP2004128057A (ja) | 2002-09-30 | 2004-04-22 | Fuji Photo Film Co Ltd | 発光装置およびその製造方法 |
| JP2004193029A (ja) | 2002-12-13 | 2004-07-08 | Advanced Display Inc | 光源装置及び表示装置 |
| US6900474B2 (en) | 2002-12-20 | 2005-05-31 | Lumileds Lighting U.S., Llc | Light emitting devices with compact active regions |
| TWI237546B (en) | 2003-01-30 | 2005-08-01 | Osram Opto Semiconductors Gmbh | Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component |
| US6786390B2 (en) | 2003-02-04 | 2004-09-07 | United Epitaxy Company Ltd. | LED stack manufacturing method and its structure thereof |
| US6936857B2 (en) | 2003-02-18 | 2005-08-30 | Gelcore, Llc | White light LED device |
| JP4274843B2 (ja) | 2003-04-21 | 2009-06-10 | シャープ株式会社 | Ledデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびlcd表示装置 |
| US6964507B2 (en) | 2003-04-25 | 2005-11-15 | Everbrite, Llc | Sign illumination system |
| US7087936B2 (en) | 2003-04-30 | 2006-08-08 | Cree, Inc. | Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction |
| CA2533209A1 (en) | 2003-07-23 | 2005-01-27 | Tir Systems Ltd. | Control system for an illumination device incorporating discrete light sources |
| US6806112B1 (en) | 2003-09-22 | 2004-10-19 | National Chung-Hsing University | High brightness light emitting diode |
| US6972438B2 (en) | 2003-09-30 | 2005-12-06 | Cree, Inc. | Light emitting diode with porous SiC substrate and method for fabricating |
| US20050077535A1 (en) | 2003-10-08 | 2005-04-14 | Joinscan Electronics Co., Ltd | LED and its manufacturing process |
| US20050082562A1 (en) | 2003-10-15 | 2005-04-21 | Epistar Corporation | High efficiency nitride based light emitting device |
| US6841804B1 (en) | 2003-10-27 | 2005-01-11 | Formosa Epitaxy Incorporation | Device of white light-emitting diode |
| JP2005144679A (ja) | 2003-11-11 | 2005-06-09 | Roland Dg Corp | インクジェットプリンタ |
| TWI291770B (en) | 2003-11-14 | 2007-12-21 | Hon Hai Prec Ind Co Ltd | Surface light source device and light emitting diode |
| JP2005167091A (ja) * | 2003-12-04 | 2005-06-23 | Nitto Denko Corp | 光半導体装置 |
| US7102152B2 (en) * | 2004-10-14 | 2006-09-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for emitting output light using quantum dots and non-quantum fluorescent material |
| JP4442216B2 (ja) | 2003-12-19 | 2010-03-31 | 豊田合成株式会社 | Ledランプ装置 |
| JP2005268770A (ja) * | 2004-02-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 白色発光素子及び白色光源 |
| US7256557B2 (en) | 2004-03-11 | 2007-08-14 | Avago Technologies General Ip(Singapore) Pte. Ltd. | System and method for producing white light using a combination of phosphor-converted white LEDs and non-phosphor-converted color LEDs |
| US7009343B2 (en) | 2004-03-11 | 2006-03-07 | Kevin Len Li Lim | System and method for producing white light using LEDs |
| US7279346B2 (en) | 2004-03-31 | 2007-10-09 | Cree, Inc. | Method for packaging a light emitting device by one dispense then cure step followed by another |
| US7419912B2 (en) | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
| US7868343B2 (en) | 2004-04-06 | 2011-01-11 | Cree, Inc. | Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same |
| WO2005104247A1 (ja) | 2004-04-19 | 2005-11-03 | Matsushita Electric Industrial Co., Ltd. | Led照明光源の製造方法およびled照明光源 |
| TWI244773B (en) * | 2004-04-26 | 2005-12-01 | Univ Nat Chunghsing | Manufacturing method of solid state high luminance light-emitting device and the product using the same |
| WO2005115740A1 (ja) * | 2004-05-26 | 2005-12-08 | Nissan Chemical Industries, Ltd. | 面発光体 |
| KR100665298B1 (ko) | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광장치 |
| US7202608B2 (en) | 2004-06-30 | 2007-04-10 | Tir Systems Ltd. | Switched constant current driving and control circuit |
| JP4996463B2 (ja) | 2004-06-30 | 2012-08-08 | クリー インコーポレイテッド | 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス |
| KR100638611B1 (ko) | 2004-08-12 | 2006-10-26 | 삼성전기주식회사 | 다중 렌즈 발광 다이오드 |
| US7135664B2 (en) | 2004-09-08 | 2006-11-14 | Emteq Lighting and Cabin Systems, Inc. | Method of adjusting multiple light sources to compensate for variation in light output that occurs with time |
| DE102004047669A1 (de) | 2004-09-30 | 2006-04-13 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Beleuchtungseinrichtung und Verfahren zur Regelung |
| TWI240441B (en) * | 2004-10-08 | 2005-09-21 | Univ Nat Chunghsing | Method of making high-brightness solid-state light-emitting device and the product made therefrom |
| JP2006135225A (ja) | 2004-11-09 | 2006-05-25 | Toshiba Corp | 発光装置 |
| US7419839B2 (en) | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
| KR100580753B1 (ko) | 2004-12-17 | 2006-05-15 | 엘지이노텍 주식회사 | 발광소자 패키지 |
| TWI255566B (en) | 2005-03-04 | 2006-05-21 | Jemitek Electronics Corp | Led |
| US7646035B2 (en) | 2006-05-31 | 2010-01-12 | Cree, Inc. | Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices |
| US7365371B2 (en) | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
| US8110469B2 (en) | 2005-08-30 | 2012-02-07 | Micron Technology, Inc. | Graded dielectric layers |
| JP5166278B2 (ja) | 2005-11-18 | 2013-03-21 | クリー インコーポレイテッド | 固体素子照明タイル |
| CN103925521A (zh) | 2005-12-21 | 2014-07-16 | 科锐公司 | 照明装置 |
| US7213940B1 (en) | 2005-12-21 | 2007-05-08 | Led Lighting Fixtures, Inc. | Lighting device and lighting method |
| EP1969633B1 (en) | 2005-12-22 | 2018-08-29 | Cree, Inc. | Lighting device |
| KR101408622B1 (ko) | 2006-01-20 | 2014-06-17 | 크리, 인코포레이티드 | 루미포르 필름의 공간적 분리에 의한 고체 상태 발광기의 스펙트럼 컨텐츠 시프팅 |
| US7777166B2 (en) | 2006-04-21 | 2010-08-17 | Cree, Inc. | Solid state luminaires for general illumination including closed loop feedback control |
| EP2021688B1 (en) | 2006-05-05 | 2016-04-27 | Cree, Inc. | Lighting device |
| WO2007139780A2 (en) | 2006-05-23 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Lighting device and method of making |
| US8008676B2 (en) | 2006-05-26 | 2011-08-30 | Cree, Inc. | Solid state light emitting device and method of making same |
| US7820075B2 (en) | 2006-08-10 | 2010-10-26 | Intematix Corporation | Phosphor composition with self-adjusting chromaticity |
-
2007
- 2007-05-24 US US11/753,103 patent/US8008676B2/en active Active
- 2007-05-24 JP JP2009512155A patent/JP2009538536A/ja active Pending
- 2007-05-24 WO PCT/US2007/012403 patent/WO2007139894A2/en not_active Ceased
- 2007-05-24 EP EP07795294.3A patent/EP2033235B1/en active Active
- 2007-05-25 TW TW096118669A patent/TWI425652B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08102549A (ja) * | 1994-09-30 | 1996-04-16 | Rohm Co Ltd | 半導体発光素子 |
| JP2006128296A (ja) * | 2004-10-27 | 2006-05-18 | Kyocera Corp | 発光素子およびそれを用いた照明装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2033235A4 (en) | 2012-05-23 |
| WO2007139894A2 (en) | 2007-12-06 |
| TW200802995A (en) | 2008-01-01 |
| US20070280624A1 (en) | 2007-12-06 |
| US8008676B2 (en) | 2011-08-30 |
| TWI425652B (zh) | 2014-02-01 |
| EP2033235A2 (en) | 2009-03-11 |
| EP2033235B1 (en) | 2017-06-21 |
| WO2007139894A3 (en) | 2008-10-30 |
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