JP2009534864A - 改善された光視準を有するled組立体 - Google Patents
改善された光視準を有するled組立体 Download PDFInfo
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- JP2009534864A JP2009534864A JP2009507673A JP2009507673A JP2009534864A JP 2009534864 A JP2009534864 A JP 2009534864A JP 2009507673 A JP2009507673 A JP 2009507673A JP 2009507673 A JP2009507673 A JP 2009507673A JP 2009534864 A JP2009534864 A JP 2009534864A
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- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 239000000919 ceramic Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000005855 radiation Effects 0.000 claims abstract description 12
- 239000008393 encapsulating agent Substances 0.000 claims description 27
- 239000002159 nanocrystal Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 229910001887 tin oxide Inorganic materials 0.000 claims 2
- 238000005516 engineering process Methods 0.000 abstract description 8
- 239000011521 glass Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005524 ceramic coating Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- HZVVJJIYJKGMFL-UHFFFAOYSA-N almasilate Chemical compound O.[Mg+2].[Al+3].[Al+3].O[Si](O)=O.O[Si](O)=O HZVVJJIYJKGMFL-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- -1 copper graphite composites Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000006112 glass ceramic composition Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
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- Led Device Packages (AREA)
Abstract
Description
図2は、向上した視準の光線を提供するためにパッケージングされた発光ダイオード(LED)組立体20の概略断面図である。このLED組立体20は、基材12上に取り付けられる1つ又はそれ以上のLEDダイス11を備える。このダイス11は、好ましくはエポキシ樹脂のドーム13である透過性の封入剤(エンキャプシュラント)内に有利には密閉される。このダイス11は、表面キャビティ21内に取り付けられてもよい。有利には、この基材12は、金属基材12上に位置するセラミック被覆22を有するセラミック被覆された金属を備える。このセラミック被覆された金属基材は、有利には、ここでは部分IIに記載されるLTCC−M技術によって作られる。
図2の組立体は、ここでは部分IIに記載されるLTCC−M技術を用いて基材及びキャビティを形成することによって製造することができる。この封入剤のドーム13は、ダイマックス9615エポキシ樹脂(Dymax 9615 epoxy)などの封入剤を用いて形成することができる。この周囲の反射表面24は、当分野で周知の方法を用いてアルミニウム膜の真空蒸着によって形成することができる。
多層セラミック回路板は、グリーンセラミックテープの層から作られる。グリーンテープは、有機結合剤及び溶媒が混合される特定のガラス組成物及び任意のセラミック粉末から作られ、テープを形成するために鋳造され切断される。ワイヤーパターンは、様々な機能を実行するために、このテープ層にスクリーン印刷することができる。次いで、一方のグリーンテープ上のワイヤーを他方のグリーンテープ上のワイヤーに接続するために、ビアがテープに穴あけされ、伝導インクで充填される。次いで、有機材料を除去し、金属パターンを焼結し、ガラスを結晶化するために、これらのテープは位置合わせされ、積層され、焼成される。これは、一般的に約1000℃以下の温度、好ましくは約750−950℃で行われる。このガラスの組成によって、熱膨張係係数、誘電定数、及び、様々な電気部品への多層セラミック回路基板の適合性が決定される。700から1000℃の温度範囲で焼結する、無機充填剤を有する例示的な結晶ガラスは、アルミノ珪酸塩マグネシウム(Magnesium Alumino-Silicate)、ホウケイ酸カルシウム(Calcium Boro-Silicate)、ホウケイ酸鉛(Lead Boro-Silicate)、及び、アルミノボリケートカルシウム(Calcium Alumino-Boricate)である。
11 LEDダイス
11a 上部表面
11b 側表面
12 基材
12a 表面
13 ドーム
14 光線
15 放射パターン
20 LED組立体
21 基板
22 セラミック被覆
24 反射性表面
25 光線
26 光線
26A 光線
30 LTCC−Mパッケージ
31 金属基材
32 LTCC
34 ワイヤーボンド
35 熱接続ボンド
36 熱接続パッド
37 導電ビア
Claims (24)
- 熱伝導性基材と、
前記基材の上に取り付けられる少なくとも1つのLEDダイスと、
前記LEDダイスを覆う透過性の封入剤と、
前記ダイスによって放出される光を反射するために前記封入剤の一部を覆う反射性材料と、
を備える、光視準を改善するためにパッケージングされたLED組立体。 - 前記反射材料は、アルミニウム膜を含む、請求項1に記載の組立体。
- 前記封入剤は、エポキシ樹脂のドームを含む、請求項1に記載の組立体。
- 前記封入剤の前記反射性材料は、所望の放射パターン内に光の放出を制限する、請求項1に記載の組立体。
- 前記基材は、金属層と前記金属層上に配置される少なくとも1つのセラミック層とを備える、請求項1に記載の組立体。
- 前記基材は、前記セラミック層内に開口部を有する表面キャビティを備え、前記ダイスは、前記キャビティ内に取り付けられる、請求項4に記載の組立体。
- 前記LEDダイスは、粗面を有する、請求項1に記載の組立体。
- 前記封入剤によって覆われる前記LEDダイスの表面または前記基材の表面の少なくとも1つは、エッチング又はミリングされる、請求項1に記載の組立体。
- 前記LEDダイスは、研磨された表面を有する、請求項1に記載の組立体。
- 前記LED上に配置されるナノ結晶をさらに含む、請求項1に記載の組立体。
- 前記ナノ結晶は、シリカ、シリコン、酸化チタン、酸化インジウム、酸化錫またはそれらの組み合わせからなる群から選択される材料を含む、請求項10に記載の組立体。
- 表面キャビティを有する低温共焼成セラミックオンメタル(LTCC−M)基材と、
前記キャビティ内に取り付けられる少なくとも1つのLEDダイスと、
前記LEDダイスを覆う透過性の封入剤と、
前記ダイスのよって放出される光を反射するために前記封入剤の一部を覆う反射性材料と、
を備える、光視準を改善するためにパッケージングされたLED組立体。 - 前記反射性材料は、アルミニウム膜を含む、請求項12に記載の組立体。
- 前記封入剤は、エポキシ樹脂のドームを含む、請求項12に記載の組立体。
- 前記封入剤の前記反射性材料は、所望の放射パターン内に光の放出を制限する、請求項12に記載の組立体。
- 前記LEDダイスは、粗面を有する、請求項12に記載の組立体。
- 前記封入剤によって覆われる前記LEDダイスの表面または前記基材の表面の少なくとも1つは、エッチング又はミリング、請求項12に記載の組立体。
- 前記LEDダイスは、研磨された表面を有する、請求項10に記載の組立体。
- 前記LED上に配置されるナノ結晶をさらに含む、請求項9に記載の組立体。
- 前記ナノ結晶は、シリカ、シリコン、酸化チタン、酸化インジウム、酸化錫またはそれらの組み合わせからなる群から選択される材料を含む、請求項19に記載の組立体。
- 前記少なくとも1つのLEDダイスの各々は、前記金属基材の上にあり、前記金属基材から絶縁される一対の電極を備える、請求項12に記載の組立体。
- 前記金属基材から絶縁される導電性ビアをさらに備え、前記電極は、前記ビアに電気的に接続される請求項21に記載の組立体。
- 前記基材に前記電極を電気的に接続するワイヤーボンドをさらに備える、請求項22に記載の組立体。
- 前記LEDダイスからの熱を放散するために前記基材に取り付けられる熱接続パッドをさらに備える、請求項12に記載の組立体。
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US11/409,847 US7777235B2 (en) | 2003-05-05 | 2006-04-24 | Light emitting diodes with improved light collimation |
PCT/US2007/001818 WO2007133301A2 (en) | 2006-04-24 | 2007-01-24 | Light emitting diodes with improved light collimation |
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US (1) | US7777235B2 (ja) |
EP (1) | EP2020037A4 (ja) |
JP (1) | JP2009534864A (ja) |
KR (1) | KR101276360B1 (ja) |
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US9180549B2 (en) | 2013-08-28 | 2015-11-10 | Nichia Corporation | Wavelength conversion member, light emitting device, and method of manufacturing light emitting device |
Also Published As
Publication number | Publication date |
---|---|
WO2007133301A2 (en) | 2007-11-22 |
WO2007127712A3 (en) | 2010-06-17 |
EP2020037A2 (en) | 2009-02-04 |
EP2020037A4 (en) | 2014-01-08 |
US20070018175A1 (en) | 2007-01-25 |
KR101276360B1 (ko) | 2013-06-18 |
WO2007127712A2 (en) | 2007-11-08 |
TW200742132A (en) | 2007-11-01 |
WO2007133301A3 (en) | 2008-06-26 |
US7777235B2 (en) | 2010-08-17 |
KR20090006207A (ko) | 2009-01-14 |
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