JP2009531806A5 - - Google Patents

Download PDF

Info

Publication number
JP2009531806A5
JP2009531806A5 JP2009503138A JP2009503138A JP2009531806A5 JP 2009531806 A5 JP2009531806 A5 JP 2009531806A5 JP 2009503138 A JP2009503138 A JP 2009503138A JP 2009503138 A JP2009503138 A JP 2009503138A JP 2009531806 A5 JP2009531806 A5 JP 2009531806A5
Authority
JP
Japan
Prior art keywords
program
pulses
charge storage
pulse
application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009503138A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009531806A (ja
JP4669065B2 (ja
Filing date
Publication date
Priority claimed from US11/392,265 external-priority patent/US7327608B2/en
Priority claimed from US11/391,811 external-priority patent/US7330373B2/en
Application filed filed Critical
Priority claimed from PCT/US2007/064064 external-priority patent/WO2007112213A2/en
Publication of JP2009531806A publication Critical patent/JP2009531806A/ja
Publication of JP2009531806A5 publication Critical patent/JP2009531806A5/ja
Application granted granted Critical
Publication of JP4669065B2 publication Critical patent/JP4669065B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009503138A 2006-03-28 2007-03-15 プログラミング速度を向上させるプログラミング電圧に応じたプログラム時間調整 Expired - Fee Related JP4669065B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/392,265 US7327608B2 (en) 2006-03-28 2006-03-28 Program time adjustment as function of program voltage for improved programming speed in programming method
US11/391,811 US7330373B2 (en) 2006-03-28 2006-03-28 Program time adjustment as function of program voltage for improved programming speed in memory system
PCT/US2007/064064 WO2007112213A2 (en) 2006-03-28 2007-03-15 Program time adjustment as function of program voltage for improved programming speed

Publications (3)

Publication Number Publication Date
JP2009531806A JP2009531806A (ja) 2009-09-03
JP2009531806A5 true JP2009531806A5 (https=) 2010-04-30
JP4669065B2 JP4669065B2 (ja) 2011-04-13

Family

ID=38541790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009503138A Expired - Fee Related JP4669065B2 (ja) 2006-03-28 2007-03-15 プログラミング速度を向上させるプログラミング電圧に応じたプログラム時間調整

Country Status (6)

Country Link
EP (1) EP2005439B1 (https=)
JP (1) JP4669065B2 (https=)
KR (1) KR101312503B1 (https=)
AT (1) ATE515035T1 (https=)
TW (1) TWI340389B (https=)
WO (1) WO2007112213A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7330373B2 (en) 2006-03-28 2008-02-12 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in memory system
KR101893864B1 (ko) * 2012-02-06 2018-08-31 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 프로그램 방법과 이를 이용하는 데이터 처리 시스템
US11694751B2 (en) * 2019-11-30 2023-07-04 Semibrain Inc. Logic compatible flash memory programming with a pulse width control scheme

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69533429T2 (de) 1995-06-07 2005-08-18 Macronix International Co. Ltd., Hsinchu Automatischer progammier-algorithmus für flash-speicher im seitenmodus mit variabler programmierimpulshöhe und -breite
US5991201A (en) 1998-04-27 1999-11-23 Motorola Inc. Non-volatile memory with over-program protection and method therefor
JP4170682B2 (ja) * 2002-06-18 2008-10-22 株式会社東芝 不揮発性半導体メモリ装置
US7110298B2 (en) * 2004-07-20 2006-09-19 Sandisk Corporation Non-volatile system with program time control
JP2007115359A (ja) * 2005-10-21 2007-05-10 Oki Electric Ind Co Ltd 半導体メモリのデータ書込方法

Similar Documents

Publication Publication Date Title
TW200632922A (en) High speed programming system with reduced over programming
JP2020533668A5 (https=)
JP2014110073A5 (ja) スマートメモリアーキテクチャを提供するための方法
JP2008507802A5 (https=)
CN105529047A (zh) 半导体器件及驱动该半导体器件的方法
US8300449B2 (en) Resistive random access memory and verifying method thereof
ATE542298T1 (de) Verfahren zum kalibrieren eines takts unter verwendung mehrerer taktperioden mit einem einzigen zähler und diesbezügliche einrichtungen und verfahren
TW200737213A (en) Method and system for error correction in flash memory
JP6924204B2 (ja) 超音波デバイスにおけるパラメータ転送用の直列インタフェース
KR102436992B1 (ko) 리프레시 제어 장치
JP2019509842A5 (https=)
KR101212739B1 (ko) 비휘발성 메모리장치 및 이의 동작방법
US9437311B1 (en) Flash memory apparatus and initialization method for programming operation thereof
JP2014116064A5 (https=)
CN103370746B (zh) 存储器及编程存储器的方法
JP2009531806A5 (https=)
US11379394B2 (en) Methods and devices that utilize hardware to move blocks of operating parameter data from memory to a register set
US9159412B1 (en) Staggered write and verify for phase change memory
EP4510134A3 (en) Method of programming multilevel cell nand flash memory device and mlc nand flash memory device
KR101239682B1 (ko) 내부전압생성회로 및 반도체 집적회로
US9183919B2 (en) Semiconductor device
RU2016107382A (ru) Полупроводниковое запоминающее устройство
TW200717539A (en) Internal signal generator for use in semiconductor memory device
JP6444803B2 (ja) 書込電圧生成回路及びメモリ装置
JP2009217926A5 (https=)