JP2009522197A - パターン形成された基板上のナノワイヤの配向した成長のための方法 - Google Patents

パターン形成された基板上のナノワイヤの配向した成長のための方法 Download PDF

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JP2009522197A
JP2009522197A JP2008548610A JP2008548610A JP2009522197A JP 2009522197 A JP2009522197 A JP 2009522197A JP 2008548610 A JP2008548610 A JP 2008548610A JP 2008548610 A JP2008548610 A JP 2008548610A JP 2009522197 A JP2009522197 A JP 2009522197A
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nanowires
substrate
nanowire
applying
temperature
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JP2009522197A5 (enExample
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バージニア ロビンス，
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Nanosys Inc
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Nanosys Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008548610A 2005-12-29 2006-12-20 パターン形成された基板上のナノワイヤの配向した成長のための方法 Pending JP2009522197A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75451905P 2005-12-29 2005-12-29
PCT/US2006/048457 WO2007133271A2 (en) 2005-12-29 2006-12-20 Methods for oriented growth of nanowires on patterned substrates

Publications (2)

Publication Number Publication Date
JP2009522197A true JP2009522197A (ja) 2009-06-11
JP2009522197A5 JP2009522197A5 (enExample) 2011-01-13

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US (1) US7951422B2 (enExample)
EP (1) EP1966847B1 (enExample)
JP (1) JP2009522197A (enExample)
KR (1) KR101287350B1 (enExample)
CN (1) CN101331590B (enExample)
AU (1) AU2006343556B2 (enExample)
CA (1) CA2624778A1 (enExample)
WO (2) WO2007136412A2 (enExample)

Cited By (4)

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JP2010532308A (ja) * 2007-06-29 2010-10-07 コリア アドバンスト インスティテュート オブ サイエンス アンド テクノロジー 貴金属単結晶ナノワイヤ及びその製造方法
JP2012087043A (ja) * 2010-09-21 2012-05-10 Semiconductor Energy Lab Co Ltd 微小針状構造物と微小針状構造物を有する装置
KR101273702B1 (ko) 2011-03-03 2013-06-12 전북대학교산학협력단 Ｐｔ촉매를 이용한 ＧａＮ 나노와이어의 성장방법
JP2015503852A (ja) * 2012-01-10 2015-02-02 ノルウェージアン ユニバーシティー オブ サイエンス アンド テクノロジー（エヌティーエヌユー） グラフェンのトップ及びボトム電極を備えたナノワイヤーデバイス及びそのようなデバイスの製造方法

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US7838933B2 (en) 2006-12-22 2010-11-23 Palo Alto Res Ct Inc Printing method for high performance electronic devices
US7838865B2 (en) * 2006-12-22 2010-11-23 Palo Alto Research Center Incorporated Method for aligning elongated nanostructures
US7781317B2 (en) * 2007-01-03 2010-08-24 Toyota Motor Engineering & Manufacturing North America, Inc. Method of non-catalytic formation and growth of nanowires
FR2925764B1 (fr) * 2007-12-20 2010-05-28 Commissariat Energie Atomique Procede de croissance horizontale de nanotubes/nanofibres.
JP5196988B2 (ja) * 2007-12-21 2013-05-15 スリーエム イノベイティブ プロパティズ カンパニー インク組成物、その製造方法、そのインク組成物を用いて形成した電極触媒層及びこれらの用途
TWI372418B (en) * 2008-08-14 2012-09-11 Univ Nat Chiao Tung Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same
CN102040191B (zh) * 2009-10-15 2013-06-12 北京邮电大学 纳米线异质外延生长方法
CN101704500B (zh) * 2009-11-19 2013-04-10 复旦大学 一种超长芯-壳结构硅纳米线及其制备方法
CN101840852A (zh) * 2010-04-02 2010-09-22 中国科学院半导体研究所 在图形化的半导体衬底上制作有序半导体纳米结构的方法
DE102010019565A1 (de) 2010-05-05 2011-11-10 Spawnt Private S.À.R.L. Nanodrähte aus neuartigen Precursoren und Verfahren zu deren Herstellung
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JP2013527831A (ja) 2010-05-05 2013-07-04 シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ 新規な前駆体から生成されたナノワイヤおよびその製造方法
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CN102569034A (zh) * 2012-02-15 2012-07-11 中国科学院半导体研究所 在自然氧化的Si衬底上生长InAs纳米线的方法
KR101352958B1 (ko) * 2012-11-22 2014-01-21 전북대학교산학협력단 나노와이어의 제조방법 및 이를 이용하여 제조된 나노와이어를 포함하는 다이오드
KR101433895B1 (ko) 2012-12-17 2014-08-29 전북대학교산학협력단 나노와이어 제조 방법
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