JP2009519612A - 低誘電率膜のアッシング／ウエットエッチング損傷抵抗と組込み安定性を改善する方法 - Google Patents

低誘電率膜のアッシング／ウエットエッチング損傷抵抗と組込み安定性を改善する方法 Download PDF

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JP2009519612A
JP2009519612A JP2008545924A JP2008545924A JP2009519612A JP 2009519612 A JP2009519612 A JP 2009519612A JP 2008545924 A JP2008545924 A JP 2008545924A JP 2008545924 A JP2008545924 A JP 2008545924A JP 2009519612 A JP2009519612 A JP 2009519612A
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organosilicon compound
flow rate
chamber
dielectric constant
low dielectric
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JP2009519612A5 (https=
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サン エイチ． アーン，
アレクサンドロス ティー． デモス，
ヒケム ムサード，
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Applied Materials Inc
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Applied Materials Inc
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
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    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
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    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6539—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
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    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
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    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
JP2008545924A 2005-12-13 2006-12-08 低誘電率膜のアッシング／ウエットエッチング損傷抵抗と組込み安定性を改善する方法 Pending JP2009519612A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/304,847 US20070134435A1 (en) 2005-12-13 2005-12-13 Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
PCT/US2006/061789 WO2007117320A2 (en) 2005-12-13 2006-12-08 A method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films

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JP2009519612A true JP2009519612A (ja) 2009-05-14
JP2009519612A5 JP2009519612A5 (https=) 2010-01-14

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US (1) US20070134435A1 (https=)
JP (1) JP2009519612A (https=)
KR (1) KR20080083662A (https=)
CN (1) CN101316945B (https=)
WO (1) WO2007117320A2 (https=)

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