JP2009511969A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009511969A5 JP2009511969A5 JP2008534956A JP2008534956A JP2009511969A5 JP 2009511969 A5 JP2009511969 A5 JP 2009511969A5 JP 2008534956 A JP2008534956 A JP 2008534956A JP 2008534956 A JP2008534956 A JP 2008534956A JP 2009511969 A5 JP2009511969 A5 JP 2009511969A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- polymer
- composition
- moiety
- monomer units
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920000642 polymer Polymers 0.000 claims 26
- 239000000203 mixture Substances 0.000 claims 25
- 238000000034 method Methods 0.000 claims 21
- 239000000178 monomer Substances 0.000 claims 16
- 125000003118 aryl group Chemical group 0.000 claims 11
- 230000005855 radiation Effects 0.000 claims 9
- 239000010410 layer Substances 0.000 claims 7
- 239000000463 material Substances 0.000 claims 7
- 239000006117 anti-reflective coating Substances 0.000 claims 6
- 238000004090 dissolution Methods 0.000 claims 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims 2
- 230000002378 acidificating effect Effects 0.000 claims 2
- 125000003277 amino group Chemical group 0.000 claims 2
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims 2
- 230000008033 biological extinction Effects 0.000 claims 2
- FFYWKOUKJFCBAM-UHFFFAOYSA-N ethenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC=C FFYWKOUKJFCBAM-UHFFFAOYSA-N 0.000 claims 2
- BLCTWBJQROOONQ-UHFFFAOYSA-N ethenyl prop-2-enoate Chemical compound C=COC(=O)C=C BLCTWBJQROOONQ-UHFFFAOYSA-N 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 125000005864 sulfonamidyl group Chemical group 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229930192474 thiophene Natural products 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/249,693 US7544750B2 (en) | 2005-10-13 | 2005-10-13 | Top antireflective coating composition with low refractive index at 193nm radiation wavelength |
| US11/249,693 | 2005-10-13 | ||
| PCT/EP2006/065877 WO2007042348A1 (en) | 2005-10-13 | 2006-08-31 | Top antireflective coating composition with low refractive index at 193nm radiation wavelength |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011171777A Division JP5182830B2 (ja) | 2005-10-13 | 2011-08-05 | １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009511969A JP2009511969A (ja) | 2009-03-19 |
| JP2009511969A5 true JP2009511969A5 (https=) | 2010-08-12 |
| JP4866912B2 JP4866912B2 (ja) | 2012-02-01 |
Family
ID=37188858
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008534956A Expired - Fee Related JP4866912B2 (ja) | 2005-10-13 | 2006-08-31 | １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物 |
| JP2011171777A Expired - Fee Related JP5182830B2 (ja) | 2005-10-13 | 2011-08-05 | １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011171777A Expired - Fee Related JP5182830B2 (ja) | 2005-10-13 | 2011-08-05 | １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7544750B2 (https=) |
| EP (1) | EP1934654B1 (https=) |
| JP (2) | JP4866912B2 (https=) |
| KR (1) | KR101054729B1 (https=) |
| CN (1) | CN101288029B (https=) |
| AT (1) | ATE456076T1 (https=) |
| DE (1) | DE602006011927D1 (https=) |
| TW (1) | TWI391787B (https=) |
| WO (1) | WO2007042348A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101321150B1 (ko) * | 2005-11-29 | 2013-10-22 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 보호막 재료 및 패턴 형성 방법 |
| TWI383996B (zh) * | 2006-01-31 | 2013-02-01 | Shinetsu Chemical Co | 高分子化合物、光阻保護膜材料及圖型之形成方法 |
| US7771913B2 (en) * | 2006-04-04 | 2010-08-10 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process using the same |
| JP4749232B2 (ja) * | 2006-05-24 | 2011-08-17 | 信越化学工業株式会社 | レジスト上層反射防止膜材料およびパターン形成方法 |
| US7608390B2 (en) * | 2006-08-04 | 2009-10-27 | International Business Machines Corporation | Top antireflective coating composition containing hydrophobic and acidic groups |
| JP4888655B2 (ja) * | 2006-08-11 | 2012-02-29 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
| JP5162934B2 (ja) * | 2007-03-23 | 2013-03-13 | Ｊｓｒ株式会社 | 上層反射防止膜形成用組成物及びレジストパターン形成方法 |
| KR101426116B1 (ko) * | 2007-09-26 | 2014-08-05 | 제이에스알 가부시끼가이샤 | 액침용 상층막 형성용 조성물 및 액침용 상층막 및 포토레지스트 패턴 형성 방법 |
| JP4993139B2 (ja) * | 2007-09-28 | 2012-08-08 | 信越化学工業株式会社 | 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法 |
| JP5010569B2 (ja) * | 2008-01-31 | 2012-08-29 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
| JP5228792B2 (ja) * | 2008-10-23 | 2013-07-03 | Ｊｓｒ株式会社 | 上層反射防止膜形成用組成物及び上層反射防止膜 |
| US8097401B2 (en) | 2009-03-24 | 2012-01-17 | International Business Machines Corporation | Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same |
| JP5382321B2 (ja) * | 2009-03-31 | 2014-01-08 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
| US9012133B2 (en) | 2011-08-30 | 2015-04-21 | International Business Machines Corporation | Removal of alkaline crystal defects in lithographic patterning |
| WO2022196485A1 (ja) * | 2021-03-19 | 2022-09-22 | Jsr株式会社 | 半導体基板の製造方法及びレジスト下層膜形成用組成物 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0522990B1 (en) | 1991-06-28 | 1996-09-25 | International Business Machines Corporation | Top antireflective coating films |
| DE69423641T2 (de) * | 1993-10-12 | 2000-10-19 | Clariant Finance (Bvi) Ltd., Road Town | Reflexionsvermindernde oberflächenbeschichtungen |
| JP3334304B2 (ja) * | 1993-11-30 | 2002-10-15 | ソニー株式会社 | 半導体装置の製造方法 |
| US5731385A (en) | 1993-12-16 | 1998-03-24 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
| US5879853A (en) | 1996-01-18 | 1999-03-09 | Kabushiki Kaisha Toshiba | Top antireflective coating material and its process for DUV and VUV lithography systems |
| KR100458685B1 (ko) * | 1996-03-07 | 2005-06-02 | 클라리언트 인터내셔널 리미티드 | 굴절율을최적화함으로써개선된성능을갖는광흡수성반사방지층 |
| US6274295B1 (en) | 1997-03-06 | 2001-08-14 | Clariant Finance (Bvi) Limited | Light-absorbing antireflective layers with improved performance due to refractive index optimization |
| JP3965740B2 (ja) | 1997-10-24 | 2007-08-29 | 旭硝子株式会社 | コーティング組成物 |
| US5994007A (en) * | 1997-12-19 | 1999-11-30 | Kabushiki Kaisha Toshiba | Pattern forming method utilizing first insulative and then conductive overlayer and underlayer |
| JP3673399B2 (ja) | 1998-06-03 | 2005-07-20 | クラリアント インターナショナル リミテッド | 反射防止コーティング用組成物 |
| US6114085A (en) * | 1998-11-18 | 2000-09-05 | Clariant Finance (Bvi) Limited | Antireflective composition for a deep ultraviolet photoresist |
| US6251562B1 (en) | 1998-12-23 | 2001-06-26 | International Business Machines Corporation | Antireflective polymer and method of use |
| WO2002025374A2 (en) | 2000-09-19 | 2002-03-28 | Shipley Company, L.L.C. | Antireflective composition |
| JP2003345026A (ja) * | 2002-05-24 | 2003-12-03 | Tokyo Ohka Kogyo Co Ltd | 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法 |
| JP3851594B2 (ja) * | 2002-07-04 | 2006-11-29 | Ａｚエレクトロニックマテリアルズ株式会社 | 反射防止コーティング用組成物およびパターン形成方法 |
| KR100586541B1 (ko) | 2003-07-16 | 2006-06-07 | 주식회사 하이닉스반도체 | 유기 반사 방지막 조성물 및 이를 이용한 패턴 형성 방법 |
| KR100586542B1 (ko) | 2003-07-31 | 2006-06-07 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조 방법 및 이를포함하는 반사방지막 조성물 |
| US7223517B2 (en) * | 2003-08-05 | 2007-05-29 | International Business Machines Corporation | Lithographic antireflective hardmask compositions and uses thereof |
| US7172849B2 (en) * | 2003-08-22 | 2007-02-06 | International Business Machines Corporation | Antireflective hardmask and uses thereof |
| JP4484603B2 (ja) * | 2004-03-31 | 2010-06-16 | セントラル硝子株式会社 | トップコート組成物 |
| US7335456B2 (en) * | 2004-05-27 | 2008-02-26 | International Business Machines Corporation | Top coat material and use thereof in lithography processes |
| JP4551704B2 (ja) * | 2004-07-08 | 2010-09-29 | 富士フイルム株式会社 | 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法 |
| JP4520245B2 (ja) * | 2004-08-17 | 2010-08-04 | セントラル硝子株式会社 | リソグラフィー用トップコート膜の製造方法 |
| EP2468780B1 (en) * | 2004-09-30 | 2013-11-13 | JSR Corporation | Copolymer and top coating composition |
| CN101080674B (zh) * | 2004-12-03 | 2013-09-18 | 捷时雅株式会社 | 形成抗反射薄膜的组合物，层状产品，和抗蚀剂图案的形成方法 |
| US7326523B2 (en) * | 2004-12-16 | 2008-02-05 | International Business Machines Corporation | Low refractive index polymers as underlayers for silicon-containing photoresists |
| US7375172B2 (en) * | 2005-07-06 | 2008-05-20 | International Business Machines Corporation | Underlayer compositions containing heterocyclic aromatic structures |
-
2005
- 2005-10-13 US US11/249,693 patent/US7544750B2/en not_active Expired - Fee Related
-
2006
- 2006-08-31 WO PCT/EP2006/065877 patent/WO2007042348A1/en not_active Ceased
- 2006-08-31 CN CN2006800379685A patent/CN101288029B/zh not_active Expired - Fee Related
- 2006-08-31 DE DE602006011927T patent/DE602006011927D1/de active Active
- 2006-08-31 AT AT06793113T patent/ATE456076T1/de not_active IP Right Cessation
- 2006-08-31 EP EP06793113A patent/EP1934654B1/en active Active
- 2006-08-31 JP JP2008534956A patent/JP4866912B2/ja not_active Expired - Fee Related
- 2006-08-31 KR KR1020087008448A patent/KR101054729B1/ko not_active Expired - Fee Related
- 2006-10-11 TW TW095137325A patent/TWI391787B/zh not_active IP Right Cessation
-
2011
- 2011-08-05 JP JP2011171777A patent/JP5182830B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009511969A5 (https=) | ||
| JP2608429B2 (ja) | パターン形成用材料およびパターン形成方法 | |
| JP5182830B2 (ja) | １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物 | |
| JP6090777B2 (ja) | ナノ構造体を表面に備える基板の製造方法 | |
| JP5046236B2 (ja) | 改善された性能を有する液浸トップコート材料 | |
| JP2008532067A5 (https=) | ||
| JP2010530641A (ja) | インプリント・リソグラフィのための溶媒支援層の形成 | |
| JP2009516859A5 (https=) | ||
| JP2004526212A5 (https=) | ||
| CN101738860B (zh) | 用于压印工艺的光敏树脂组合物以及用于在基板之上形成有机层的方法 | |
| JP2009276406A5 (https=) | ||
| CN102365268A (zh) | 自形成的顶抗反射涂料组合物以及利用该组合物的光致抗蚀剂混合物和成像方法 | |
| KR20170060076A (ko) | 마스크 블랭크, 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법 | |
| JP5375096B2 (ja) | 反射防止膜 | |
| JP2015515639A (ja) | 感光性構造物の加工方法 | |
| TW200303452A (en) | Composition of photosensitive resin, photosensitive device using the same, forming method of photoresist pattern, and manufacturing method of printed circuit board | |
| JP5990366B2 (ja) | 積層体及びそれを用いたロール | |
| US7754820B2 (en) | Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application | |
| JP2000199954A5 (https=) | ||
| CN100339407C (zh) | 顶层防反射涂层聚合物及其制法以及包含它的顶层防反射涂料组合物 | |
| Li et al. | Photodegradable polymer LB films for nano-lithographic imaging techniques | |
| CN111538212A (zh) | 在基底上形成图案的方法及其应用 | |
| Schwalm | Lithographic Evaluation of One‐Component Deep‐UV Resists Containing o‐Nitrobenzyl Ester Moieties | |
| TW400544B (en) | Process for forming photoresist patterns | |
| CN114815500A (zh) | 形成光刻胶图案的方法 |