ATE456076T1 - Verfahren zur herstellung eines strukturierten elements auf einem träger, welches verfahren eine obere antireflexbeschichtungszusammensetzung mit geringem brechungsindex bei einer strahlungswellenlänge von 193nm verwendet - Google Patents

Verfahren zur herstellung eines strukturierten elements auf einem träger, welches verfahren eine obere antireflexbeschichtungszusammensetzung mit geringem brechungsindex bei einer strahlungswellenlänge von 193nm verwendet

Info

Publication number
ATE456076T1
ATE456076T1 AT06793113T AT06793113T ATE456076T1 AT E456076 T1 ATE456076 T1 AT E456076T1 AT 06793113 T AT06793113 T AT 06793113T AT 06793113 T AT06793113 T AT 06793113T AT E456076 T1 ATE456076 T1 AT E456076T1
Authority
AT
Austria
Prior art keywords
refractive index
radiation wavelength
producing
support
coating composition
Prior art date
Application number
AT06793113T
Other languages
German (de)
English (en)
Inventor
Wu-Song Huang
William Heath
Kaushal Patel
Pushkara Varanasi
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE456076T1 publication Critical patent/ATE456076T1/de

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)
AT06793113T 2005-10-13 2006-08-31 Verfahren zur herstellung eines strukturierten elements auf einem träger, welches verfahren eine obere antireflexbeschichtungszusammensetzung mit geringem brechungsindex bei einer strahlungswellenlänge von 193nm verwendet ATE456076T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/249,693 US7544750B2 (en) 2005-10-13 2005-10-13 Top antireflective coating composition with low refractive index at 193nm radiation wavelength
PCT/EP2006/065877 WO2007042348A1 (en) 2005-10-13 2006-08-31 Top antireflective coating composition with low refractive index at 193nm radiation wavelength

Publications (1)

Publication Number Publication Date
ATE456076T1 true ATE456076T1 (de) 2010-02-15

Family

ID=37188858

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06793113T ATE456076T1 (de) 2005-10-13 2006-08-31 Verfahren zur herstellung eines strukturierten elements auf einem träger, welches verfahren eine obere antireflexbeschichtungszusammensetzung mit geringem brechungsindex bei einer strahlungswellenlänge von 193nm verwendet

Country Status (9)

Country Link
US (1) US7544750B2 (https=)
EP (1) EP1934654B1 (https=)
JP (2) JP4866912B2 (https=)
KR (1) KR101054729B1 (https=)
CN (1) CN101288029B (https=)
AT (1) ATE456076T1 (https=)
DE (1) DE602006011927D1 (https=)
TW (1) TWI391787B (https=)
WO (1) WO2007042348A1 (https=)

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TWI383996B (zh) * 2006-01-31 2013-02-01 Shinetsu Chemical Co 高分子化合物、光阻保護膜材料及圖型之形成方法
US7771913B2 (en) * 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4749232B2 (ja) * 2006-05-24 2011-08-17 信越化学工業株式会社 レジスト上層反射防止膜材料およびパターン形成方法
US7608390B2 (en) * 2006-08-04 2009-10-27 International Business Machines Corporation Top antireflective coating composition containing hydrophobic and acidic groups
JP4888655B2 (ja) * 2006-08-11 2012-02-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5162934B2 (ja) * 2007-03-23 2013-03-13 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及びレジストパターン形成方法
KR101426116B1 (ko) * 2007-09-26 2014-08-05 제이에스알 가부시끼가이샤 액침용 상층막 형성용 조성물 및 액침용 상층막 및 포토레지스트 패턴 형성 방법
JP4993139B2 (ja) * 2007-09-28 2012-08-08 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
JP5010569B2 (ja) * 2008-01-31 2012-08-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5228792B2 (ja) * 2008-10-23 2013-07-03 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及び上層反射防止膜
US8097401B2 (en) 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
JP5382321B2 (ja) * 2009-03-31 2014-01-08 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US9012133B2 (en) 2011-08-30 2015-04-21 International Business Machines Corporation Removal of alkaline crystal defects in lithographic patterning
WO2022196485A1 (ja) * 2021-03-19 2022-09-22 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物

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Also Published As

Publication number Publication date
DE602006011927D1 (de) 2010-03-11
JP2012008586A (ja) 2012-01-12
JP4866912B2 (ja) 2012-02-01
JP5182830B2 (ja) 2013-04-17
TWI391787B (zh) 2013-04-01
TW200734823A (en) 2007-09-16
EP1934654B1 (en) 2010-01-20
US7544750B2 (en) 2009-06-09
KR20080063302A (ko) 2008-07-03
KR101054729B1 (ko) 2011-08-05
US20070087285A1 (en) 2007-04-19
CN101288029B (zh) 2012-05-30
CN101288029A (zh) 2008-10-15
JP2009511969A (ja) 2009-03-19
WO2007042348A1 (en) 2007-04-19
EP1934654A1 (en) 2008-06-25

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