JP2009509344A5 - - Google Patents

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Publication number
JP2009509344A5
JP2009509344A5 JP2008531447A JP2008531447A JP2009509344A5 JP 2009509344 A5 JP2009509344 A5 JP 2009509344A5 JP 2008531447 A JP2008531447 A JP 2008531447A JP 2008531447 A JP2008531447 A JP 2008531447A JP 2009509344 A5 JP2009509344 A5 JP 2009509344A5
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JP
Japan
Prior art keywords
fin
longitudinal axis
gate
alignment
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008531447A
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English (en)
Japanese (ja)
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JP5203948B2 (ja
JP2009509344A (ja
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Publication date
Priority claimed from US11/162,663 external-priority patent/US7323374B2/en
Application filed filed Critical
Publication of JP2009509344A publication Critical patent/JP2009509344A/ja
Publication of JP2009509344A5 publication Critical patent/JP2009509344A5/ja
Application granted granted Critical
Publication of JP5203948B2 publication Critical patent/JP5203948B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008531447A 2005-09-19 2006-09-19 高密度のシェブロンｆｉｎＦＥＴ及びそれを製造する方法 Expired - Fee Related JP5203948B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/162,663 2005-09-19
US11/162,663 US7323374B2 (en) 2005-09-19 2005-09-19 Dense chevron finFET and method of manufacturing same
PCT/US2006/036575 WO2007035788A2 (en) 2005-09-19 2006-09-19 DENSE CHEVRON finFET AND METHOD OF MANUFACTURING SAME

Publications (3)

Publication Number Publication Date
JP2009509344A JP2009509344A (ja) 2009-03-05
JP2009509344A5 true JP2009509344A5 (enExample) 2009-04-16
JP5203948B2 JP5203948B2 (ja) 2013-06-05

Family

ID=37883218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008531447A Expired - Fee Related JP5203948B2 (ja) 2005-09-19 2006-09-19 高密度のシェブロンｆｉｎＦＥＴ及びそれを製造する方法

Country Status (7)

Country Link
US (2) US7323374B2 (enExample)
EP (1) EP1935020A4 (enExample)
JP (1) JP5203948B2 (enExample)
KR (1) KR101006120B1 (enExample)
CN (1) CN101836280A (enExample)
TW (1) TW200729408A (enExample)
WO (1) WO2007035788A2 (enExample)

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US8741776B2 (en) * 2012-02-07 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process for fin-like field effect transistor (finFET) device
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