JP2009507385A - 有機電子素子における電子輸送層のn型ドーピングのための材料 - Google Patents
有機電子素子における電子輸送層のn型ドーピングのための材料 Download PDFInfo
- Publication number
- JP2009507385A JP2009507385A JP2008529587A JP2008529587A JP2009507385A JP 2009507385 A JP2009507385 A JP 2009507385A JP 2008529587 A JP2008529587 A JP 2008529587A JP 2008529587 A JP2008529587 A JP 2008529587A JP 2009507385 A JP2009507385 A JP 2009507385A
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- Prior art keywords
- electron transport
- organic electronic
- organic
- type doping
- donor
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- 239000000463 material Substances 0.000 title claims abstract description 21
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 125000001424 substituent group Chemical group 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 125000001624 naphthyl group Chemical group 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 230000005669 field effect Effects 0.000 abstract description 4
- 238000013086 organic photovoltaic Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 6
- 230000001737 promoting effect Effects 0.000 description 6
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 4
- LUGOYHPSACYLRM-UHFFFAOYSA-N n,n-diphenylanthracen-9-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=C2C=CC=CC2=1)C1=CC=CC=C1 LUGOYHPSACYLRM-UHFFFAOYSA-N 0.000 description 4
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- OFAYQQFXUDKTFR-UHFFFAOYSA-N 3-methyl-n,n-diphenylnaphthalen-1-amine Chemical compound C=12C=CC=CC2=CC(C)=CC=1N(C=1C=CC=CC=1)C1=CC=CC=C1 OFAYQQFXUDKTFR-UHFFFAOYSA-N 0.000 description 2
- MTEAUBISQMFXCE-UHFFFAOYSA-N 3-methylnaphthalen-1-amine Chemical compound C1=CC=CC2=CC(C)=CC(N)=C21 MTEAUBISQMFXCE-UHFFFAOYSA-N 0.000 description 2
- ZIRVQSRSPDUEOJ-UHFFFAOYSA-N 9-bromoanthracene Chemical compound C1=CC=C2C(Br)=C(C=CC=C3)C3=CC2=C1 ZIRVQSRSPDUEOJ-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- BRUOAURMAFDGLP-UHFFFAOYSA-N 9,10-dibromoanthracene Chemical compound C1=CC=C2C(Br)=C(C=CC=C3)C3=C(Br)C2=C1 BRUOAURMAFDGLP-UHFFFAOYSA-N 0.000 description 1
- QDOKTWAIAGRXRI-UHFFFAOYSA-N C1(=CC=CC=C1)N(C=1C2=CC=CC=C2C=C2C=CC=C(C12)B)C1=CC=CC=C1 Chemical compound C1(=CC=CC=C1)N(C=1C2=CC=CC=C2C=C2C=CC=C(C12)B)C1=CC=CC=C1 QDOKTWAIAGRXRI-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
- C07F5/02—Boron compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
- C07F5/02—Boron compounds
- C07F5/027—Organoboranes and organoborohydrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/658—Organoboranes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Description
Doは、電子供与体に相当し、特に、芳香族化合物(フェニルもしくはナフチル)によって置換されている窒素が適している。
1)
a) ジフェニルアミンと9−ブロモアントラセンからのヘックカップリングによる9−ジフェニルアミノアントラセンの合成
b) 9−ジフェニルアミノアントラセン、BuLi及び三臭化ホウ素からの−70℃での10,10,10−トリス−9−ジフェニルアミノ−アントリル−ボランの合成
a) Beilsteinハンドブック12,II,744に従った3−メチル−1−ナフチルアミンの合成
b) 3−メチル−1−ナフチルアミンとブロモベンゼンからのヘックカップリングによる1−ジフェニルアミノ−3−メチル−ナフタリンの合成
c) 1−ジフェニルアミノ−3−メチル−ナフタリンと硫黄からのベンゾ−f−6−メチル−10−フェニル−フェノチアジンの合成
d) ベンゾ−f−6−メチル−10−フェニル−フェノチアジン、BuLi及び三臭化ホウ素からの−70℃での7,7,7−トリス−ベンゾ−f−6−メチル−10−フェニル−フェノチアジニル−ボランの合成
a) ジフェニルアミンと9−ブロモアントラセンからのヘックカップリングによる9−ジフェニルアミノアントラセンの合成
b) 9,10−ジブロモアントラセン、9−ジフェニルアミノ−アントラセン、BuLi及び三臭化ホウ素からの−70℃でのテトラ−(9−ジフェニルアミノ−アントリ−10−イル)−9,10−アントリレンジボランの合成
Claims (4)
- 請求項1に記載の材料であって、構造1又は2の1つにおけるDoが、芳香族(フェニルもしくはナフチル)置換基を有する窒素を含む官能基の群から選択される材料。
- 請求項1又は2に記載の材料を、有機電子素子の電子輸送層のn型ドーピングのために用いる使用。
- 少なくとも2つの電極とともに1つの活性層を含む有機電子素子であって、少なくとも1つの電極と活性層との間に、1つの電子輸送層が配置されており、前記電子輸送層が、請求項1又は2に記載の材料でドーピングされている有機電子素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005042103.2 | 2005-09-05 | ||
DE102005042103 | 2005-09-05 | ||
PCT/EP2006/065580 WO2007028712A1 (de) | 2005-09-05 | 2006-08-23 | Materialien zur n-dotierung der elektronentransportschichten in organischen elektronischen bauelementen |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009507385A true JP2009507385A (ja) | 2009-02-19 |
JP4878368B2 JP4878368B2 (ja) | 2012-02-15 |
Family
ID=37459998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008529587A Expired - Fee Related JP4878368B2 (ja) | 2005-09-05 | 2006-08-23 | 有機電子素子における電子輸送層のn型ドーピングのための材料 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8481785B2 (ja) |
EP (1) | EP1922322B1 (ja) |
JP (1) | JP4878368B2 (ja) |
KR (1) | KR101350728B1 (ja) |
CN (1) | CN101263147A (ja) |
WO (1) | WO2007028712A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015016003A1 (ja) * | 2013-07-31 | 2015-02-05 | 富士フイルム株式会社 | 有機半導体組成物、有機薄膜トランジスタ、電子ペーパー、ディスプレイデバイス |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100892986B1 (ko) | 2007-09-20 | 2009-04-10 | 제일모직주식회사 | 유기 화합물, 및 이를 포함하는 유기광전소자 |
JP5750762B2 (ja) | 2011-08-31 | 2015-07-22 | 住友化学株式会社 | ボラン化合物と共役高分子化合物とを含む組成物及び素子 |
CN103450238B (zh) * | 2013-09-03 | 2016-06-22 | 太仓碧奇新材料研发有限公司 | 一种硼核星状空穴传输材料的制备方法 |
CN103450239B (zh) * | 2013-09-03 | 2015-10-28 | 太仓碧奇新材料研发有限公司 | 一种单硼杂环有机电子传输材料及其制备方法 |
CN103450237B (zh) * | 2013-09-03 | 2015-11-18 | 太仓碧奇新材料研发有限公司 | 一种含硼杂环有机晶体管材料的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000040586A1 (fr) * | 1999-01-08 | 2000-07-13 | Chisso Corporation | Derives de borane et composes organiques electroluminescents |
WO2005062675A1 (ja) * | 2003-12-24 | 2005-07-07 | Konica Minolta Holdings, Inc. | 有機エレクトロルミネッセンス素子用材料、有機エレクトロルミネッセンス素子、照明装置および表示装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW466256B (en) | 1995-11-24 | 2001-12-01 | Ciba Sc Holding Ag | Borate photoinitiator compounds and compositions comprising the same |
-
2006
- 2006-08-23 WO PCT/EP2006/065580 patent/WO2007028712A1/de active Application Filing
- 2006-08-23 KR KR1020087007812A patent/KR101350728B1/ko not_active IP Right Cessation
- 2006-08-23 EP EP06792961A patent/EP1922322B1/de active Active
- 2006-08-23 CN CNA2006800323745A patent/CN101263147A/zh active Pending
- 2006-08-23 JP JP2008529587A patent/JP4878368B2/ja not_active Expired - Fee Related
- 2006-08-23 US US12/065,862 patent/US8481785B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000040586A1 (fr) * | 1999-01-08 | 2000-07-13 | Chisso Corporation | Derives de borane et composes organiques electroluminescents |
WO2005062675A1 (ja) * | 2003-12-24 | 2005-07-07 | Konica Minolta Holdings, Inc. | 有機エレクトロルミネッセンス素子用材料、有機エレクトロルミネッセンス素子、照明装置および表示装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015016003A1 (ja) * | 2013-07-31 | 2015-02-05 | 富士フイルム株式会社 | 有機半導体組成物、有機薄膜トランジスタ、電子ペーパー、ディスプレイデバイス |
JPWO2015016003A1 (ja) * | 2013-07-31 | 2017-03-02 | 富士フイルム株式会社 | 有機半導体組成物、有機薄膜トランジスタ、電子ペーパー、ディスプレイデバイス |
US10008682B2 (en) | 2013-07-31 | 2018-06-26 | Fujifilm Corporation | Organic semiconductor composition, organic thin film transistor, electronic paper and display device |
Also Published As
Publication number | Publication date |
---|---|
CN101263147A (zh) | 2008-09-10 |
KR20080041734A (ko) | 2008-05-13 |
EP1922322B1 (de) | 2012-11-28 |
JP4878368B2 (ja) | 2012-02-15 |
WO2007028712A1 (de) | 2007-03-15 |
US20090114906A1 (en) | 2009-05-07 |
EP1922322A1 (de) | 2008-05-21 |
US8481785B2 (en) | 2013-07-09 |
KR101350728B1 (ko) | 2014-01-13 |
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