JP2009505386A - 密閉用のパッケージ及びパッケージの製造方法 - Google Patents
密閉用のパッケージ及びパッケージの製造方法 Download PDFInfo
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Abstract
Description
図1は、本発明の実施例に基づくパッケージの断面図であり、
図2は、本発明の実施例に基づくパッケージの製造段階での断面図であり、
図3は、本発明の実施例に基づくパッケージの断面図である。
Claims (42)
- パッケージの製造方法であって、次の工程を含んでおり、つまり、
基板(1)を準備する工程を含み、前記基板(1)の上側の表面(2)に1つ若しくは複数の構成要素(3)を配置してあり、
前記基板(1)の上側の表面(2)上並びに前記構成要素(3)上に密閉用の保護層(4)を形成する工程を含み、前記保護層は次の特性を有し、つまりガス不透過性、液密性、電磁波に対する不透過性、耐熱性、電気絶縁性及び耐処理性を有していることを特徴とする、パッケージの製造方法。 - 密閉用の保護層(4)の形成は、互いに重ねて配置された複数の部分層(5)の形成を含んでいる請求項1に記載の製造方法。
- 互いに重ねて配置された複数の部分層(5)の形成は、電気絶縁性のプラスチック材料から成るシートの成形を含んでいる請求項2に記載の製造方法。
- シートにポリイミド、ポリアミド、ポリエチレン、ポリフェノール、ポリエーテルエーテルケトン及び/又はエポキシドをベースにしたプラスチック材料を用いる請求項3に記載の製造方法。
- 互いに重ねて配置された複数の部分層(5)の形成は、金属を有する金属性の部分層(5)の形成を含んでいる請求項2から4のいずれか1項に記載の製造方法。
- 金属を、アルミニウム、銅、チタン及びニッケルのグループから選んである請求項5に記載の製造方法。
- 互いに重ねて配置された複数の部分層(5)の形成は、無機質の材料を有する無機質の層の形成を含んでいる請求項2から6のいずれか1項に記載の製造方法。
- 無機質の材料は二酸化珪素を含んでいる請求項7に記載の製造方法。
- 互いに重ねて配置された複数の部分層(5)の形成は、有機質の材料を有する有機質の層の形成を含んでいる請求項2から8のいずれか1項に記載の製造方法。
- 有機質の材料はパリレンを含んでいる請求項9に記載の製造方法。
- 互いに重ねて配置された複数の部分層(5)の形成は、有機的に改質されたセラミックを有する層の形成を含んでいる請求項2から10のいずれか1項に記載の製造方法。
- 密閉用の保護層(4)の形成は、充填剤を有する密閉用の保護層(4)の形成を含んでいる請求項2から10のいずれか1項に記載の製造方法。
- 充填剤は二酸化珪素若しくは炭素を含んでいる請求項7に記載の製造方法。
- 基板の準備は絶縁性の層(7)、該絶縁性の層(7)の下側の表面(101)に施された第1の金属層(6)、及び前記絶縁性の層(7)の下側の表面(101)と逆の側の表面(102)に施されかつパターン形成された第2の金属層(12)から成る基板の準備を含んでいる請求項1から13のいずれか1項に記載の製造方法。
- 密閉用の保護層(4)の形成は、物理的な層形成手段を含んでいる請求項1から14のいずれか1項に記載の製造方法。
- 物理的な層形成手段は、スパッター法若しくは蒸着法を含んでいる請求項14に記載の製造方法。
- 密閉用の保護層(4)の形成は、スプレー法を含んでいる請求項1から16のいずれか1項に記載の製造方法。
- 密閉用の保護層(4)の形成は、注入法を含んでいる請求項1から17のいずれか1項に記載の製造方法。
- 密閉用の保護層(4)の形成は、化学的析出法を含んでいる請求項1から18のいずれか1項に記載の製造方法。
- 化学的析出法はCVD法若しくはLPCVD法を含んでいる請求項19に記載の製造方法。
- さらに次の工程を含んでおり、つまり、密閉用の保護層(4)に窓(9)を形成することにより、基板(1)の上側の表面(2)内並びに1つ若しくは複数の構成要素(3)の表面内の1つ若しくは複数の接触面(8)を露出させ、かつ露出された該接触面(8)と導電性の材料から成る接点層(10)とを面接触させる請求項1から20のいずれか1項に記載の製造方法。
- 窓(9)の形成は、フォトリソグラフィ法を含んでいる請求項21に記載の製造方法。
- 窓(9)の形成は、レーザーアブレーションを含んでいる請求項21又は22に記載の製造方法。
- 窓(9)の形成は、エッチング法を含んでいる請求項21から23のいずれか1項に記載の製造方法。
- 窓(9)の形成は、機械的方法を含んでいる請求項21から24のいずれか1項に記載の製造方法。
- 互いに異なる導電性材料から成っていて互いに重ねて配置された複数の個別層(11)によって形成された接点層(10)を用いる請求項21から25のいずれか1項に記載の製造方法。
- パッケージであって、基板(1)を含んでおり、該基板(1)の表面(2)上に、1つ若しくは複数の構成要素(3)を装着してあり、該構成要素(3)上並びに前記基板(1)の表面(2)上に密閉用の保護層(4)を形成してあり、該保護層は次の特性を有し、つまりガス不透過性、液密性、電磁波に対する不透過性、耐熱性、電気絶縁性及び耐処理性を有していることを特徴とするパッケージ。
- 密閉用の保護層(4)は、互いに重ねて配置された複数の部分層(5)を含んでいる請求項27に記載のパッケージ。
- 複数の部分層(5)の1つは、電気絶縁性のプラスチック材料から成るシートである請求項28に記載のパッケージ。
- シートはポリイミド、ポリアミド、ポリエチレン、ポリフェノール、ポリエーテルエーテルケトン及び/又はエポキシドをベースにしたプラスチック材料から形成されている請求項29に記載のパッケージ。
- 複数の部分層(5)の1つは、金属を有する金属層である請求項28から30のいずれか1項に記載のパッケージ。
- 金属はアルミニウム、銅、チタン及びニッケルのグループから選ばれている請求項31に記載のパッケージ。
- 複数の部分層(5)の1つは、無機質の材料を有する無機層である請求項28から32のいずれか1項に記載のパッケージ。
- 無機質の材料は二酸化珪素を含んでいる請求項33に記載のパッケージ。
- 複数の部分層(5)の1つは、有機質の材料を有する有機層である請求項28から34のいずれか1項に記載のパッケージ。
- 有機質の材料はパリレンを含んでいる請求項35に記載のパッケージ。
- 複数の部分層(5)の1つは、有機的に改質されたセラミックを有する層である請求項28から36のいずれか1項に記載のパッケージ。
- 密閉用の保護層(4)は充填剤を有している請求項27から37のいずれか1項に記載のパッケージ。
- 充填剤は二酸化珪素若しくは炭素を含んでいる請求項38に記載のパッケージ。
- 基板は絶縁性の層(7)、該絶縁性の層(7)の下側の表面(101)に施された第1の金属層(6)、及び前記絶縁性の層(7)の下側の表面(101)と逆の側の表面(102)に施されかつパターン形成された第2の金属層(12)から成っている請求項27から39のいずれか1項に記載のパッケージ。
- 基板(1)の表面並びに1つ若しくは複数の構成要素(3)の表面に接触面(8)を設けてあり、密閉用の保護層(4)は前記接触面(8)に対して窓(9)を有しており、該窓によって前記接触面(8)は露出されて、導電性の材料から成る接点層(10)と面接触されている請求項27から40のいずれか1項に記載のパッケージ。
- 接点層(10)は、互いに異なる導電性材料から成っていて互いに重ねて配置された複数の個別層(11)を含んでいる請求項41に記載のパッケージ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005037869A DE102005037869B4 (de) | 2005-08-10 | 2005-08-10 | Anordnung zur hermetischen Abdichtung von Bauelementen und Verfahren zu deren Herstellung |
DE102005037869.2 | 2005-08-10 | ||
PCT/EP2006/064787 WO2007017404A2 (de) | 2005-08-10 | 2006-07-28 | Anordnung zur hermetischen abdichtung von bauelementen und verfahren zu deren herstellung |
Publications (3)
Publication Number | Publication Date |
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JP2009505386A true JP2009505386A (ja) | 2009-02-05 |
JP2009505386A5 JP2009505386A5 (ja) | 2012-11-15 |
JP5174664B2 JP5174664B2 (ja) | 2013-04-03 |
Family
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JP2008525534A Expired - Fee Related JP5174664B2 (ja) | 2005-08-10 | 2006-07-28 | 密閉用のパッケージ及びパッケージの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7897881B2 (ja) |
JP (1) | JP5174664B2 (ja) |
DE (1) | DE102005037869B4 (ja) |
WO (1) | WO2007017404A2 (ja) |
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JP2015516298A (ja) * | 2013-01-08 | 2015-06-11 | エイチズィーオー・インコーポレーテッド | 基板からの保護被覆選択部分の除去 |
US9559514B2 (en) | 2012-01-10 | 2017-01-31 | Hzo, Inc. | Methods, apparatuses and systems for monitoring for exposure of electronic devices to moisture and reacting to exposure of electronic devices to moisture |
US9894776B2 (en) | 2013-01-08 | 2018-02-13 | Hzo, Inc. | System for refurbishing or remanufacturing an electronic device |
JP2019012722A (ja) * | 2017-06-29 | 2019-01-24 | 株式会社ケーヒン | 制御回路装置 |
US10449568B2 (en) | 2013-01-08 | 2019-10-22 | Hzo, Inc. | Masking substrates for application of protective coatings |
US10541529B2 (en) | 2012-01-10 | 2020-01-21 | Hzo, Inc. | Methods, apparatuses and systems for sensing exposure of electronic devices to moisture |
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DE102007036045A1 (de) * | 2007-08-01 | 2009-02-05 | Siemens Ag | Elektronischer Baustein mit zumindest einem Bauelement, insbesondere einem Halbleiterbauelement, und Verfahren zu dessen Herstellung |
US20090091005A1 (en) * | 2007-10-09 | 2009-04-09 | Huang Chung-Er | Shielding structure for semiconductors and manufacturing method therefor |
DE102008031231B4 (de) | 2008-07-02 | 2012-12-27 | Siemens Aktiengesellschaft | Herstellungsverfahren für planare elektronsche Leistungselektronik-Module für Hochtemperatur-Anwendungen und entsprechendes Leistungselektronik-Modul |
EP2161974A1 (de) * | 2008-09-09 | 2010-03-10 | Hegutechnik v. Gutwald KG | Bifunktionale EMV Beschichtung |
US20110270028A1 (en) * | 2010-04-30 | 2011-11-03 | Allergan, Inc. | Biocompatible and biostable implantable medical device |
US20120188727A1 (en) * | 2011-01-24 | 2012-07-26 | ADL Engineering Inc. | EMI Shielding in a Package Module |
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DE102011112476A1 (de) * | 2011-09-05 | 2013-03-07 | Epcos Ag | Bauelement und Verfahren zum Herstellen eines Bauelements |
CN102548239A (zh) | 2012-01-09 | 2012-07-04 | 华为终端有限公司 | 一种电路板的制作方法、电路板和电子设备 |
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DE102014115565B3 (de) * | 2014-10-27 | 2015-10-22 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer Schalteinrichtung mit einer feuchtigkeitsdichten und elektrisch isolierenden Abdeckung und zur Herstellung einer Anordnung hiermit |
US11034068B2 (en) * | 2018-04-30 | 2021-06-15 | Raytheon Company | Encapsulating electronics in high-performance thermoplastics |
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US9559514B2 (en) | 2012-01-10 | 2017-01-31 | Hzo, Inc. | Methods, apparatuses and systems for monitoring for exposure of electronic devices to moisture and reacting to exposure of electronic devices to moisture |
US10541529B2 (en) | 2012-01-10 | 2020-01-21 | Hzo, Inc. | Methods, apparatuses and systems for sensing exposure of electronic devices to moisture |
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US9403236B2 (en) | 2013-01-08 | 2016-08-02 | Hzo, Inc. | Removal of selected portions of protective coatings from substrates |
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US10449568B2 (en) | 2013-01-08 | 2019-10-22 | Hzo, Inc. | Masking substrates for application of protective coatings |
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Also Published As
Publication number | Publication date |
---|---|
DE102005037869B4 (de) | 2007-05-31 |
US7897881B2 (en) | 2011-03-01 |
WO2007017404A2 (de) | 2007-02-15 |
DE102005037869A1 (de) | 2007-02-15 |
WO2007017404A3 (de) | 2008-08-21 |
JP5174664B2 (ja) | 2013-04-03 |
US20100089633A1 (en) | 2010-04-15 |
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