JP2009502716A - 希土類酸硫化物シンチレータおよびそれを製造するための方法 - Google Patents
希土類酸硫化物シンチレータおよびそれを製造するための方法 Download PDFInfo
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Abstract
Description
Claims (61)
- Mが少なくとも一つの希土類元素であり、LnがEu、Ce、Pr、Tb、Yb、Dy、Sm、Nd、およびHoからなる群から選択される少なくとも一つの元素であり、および1×10-6<X<2×10-1である一般式(M1-XLnX)2O2Sを有する粉末を用意すること、
該粉末を熱処理して、閉鎖気孔率を有する圧密化物体を形成すること(熱処理は温度Thtで行われる)、および
該圧密化物体を、1100℃<Thip<1500℃の温度Thipを有するガス熱間等静圧圧縮成形(GHIP化)環境中で理論密度の99%以上の密度にガス熱間等静圧圧縮成形(GHIP化)し、それによって高密度化物体を形成すること、
を含む、希土類酸硫化物シンチレータ用セラミック体を製造する方法。 - MがY、La、およびGdからなる群から選択される、請求項1に記載の方法。
- MがGdである、請求項2に記載の方法。
- Lnが少なくともPrまたはTbを含有する、請求項1に記載の方法。
- LnがさらにCeを含有する、請求項4に記載の方法。
- 1100℃<Tht<1500℃である請求項1に記載の方法。
- 熱処理が、粉末が前記温度Thtでの熱処理の間単軸加圧成形される加熱加圧成形法により行われる、請求項1に記載の方法。
- 加熱加圧成形法が1ksi〜30ksiの範囲内の圧力で行われる、請求項7に記載の方法。
- 加熱加圧成形法が4ksi〜20ksiの範囲内の圧力で行われる、請求項8に記載の方法。
- 圧密化物体が理論密度の90%以上の密度を有する、請求項1に記載の方法。
- 圧密化物体が理論密度の95%以上の密度を有する、請求項10に記載の方法。
- 圧密化物体が開放気孔率のない、請求項1に記載の方法。
- Thipが1450℃以下である、請求項1に記載の方法。
- Thipが1400℃以下である、請求項1に記載の方法。
- Thipが1200〜1400℃範囲内である、請求項1に記載の方法。
- Thipが1300〜1400℃範囲内である、請求項1に記載の方法。
- GHIP化環境が不活性ガス環境である、請求項1に記載の方法。
- 不活性ガス環境がアルゴンまたは窒素環境である、請求項17に記載の方法。
- GHIP化が10〜100ksiのガス圧力で行われる、請求項1に記載の方法。
- GHIP化が20〜50ksiのガス圧力で行われる、請求項19に記載の方法。
- GHIP化の間、圧密化物体が処理用ガス源を含有する局部的な環境中に提供される、請求項1に記載の方法。
- 処理用ガス源が犠牲粉末を含む、請求項21に記載の方法。
- 犠牲粉末が希土類酸硫化物粉末を含む、請求項22に記載の方法。
- 希土類酸硫化物粉末が圧密化物体を形成する粉末と同じ組成を有する、請求項23に記載の方法。
- 犠牲粉末が酸化物粉末を含む、請求項22に記載の方法。
- 圧密化物体が、犠牲粉末を含有する、局部的な環境である体積を画定するるつぼ中に提供される、請求項22に記載の方法。
- 圧密化構成材が犠牲粉末中に埋め込まれる、請求項22に記載の方法。
- GHIP化が圧密化物体を理論密度の99.9%以上に高密度化するために有効である、請求項1に記載の方法。
- 粉末がさらに焼結助剤を含む、請求項1に記載の方法。
- さらに高密度化物体を機械加工する段階を含む、請求項1に記載の方法。
- 高密度化物体がブランクまたはピクセルに機械加工される、請求項30に記載の方法。
- 希土類酸硫化物シンチレータ用セラミック体が3msで200ppm以下の残光を有する、請求項1に記載の方法。
- 希土類酸硫化物シンチレータ用セラミック体が3msで100ppm以下の残光を有する、請求項32に記載の方法。
- 希土類酸硫化物シンチレータ用セラミック体がCdWO4基準の光熱出力の1.75倍以上の光熱出力を有する、請求項1に記載の方法。
- 希土類酸硫化物シンチレータ用セラミック体がCdWO4基準の光熱出力の1.9倍以上の光熱出力を有する、請求項34に記載の方法。
- 希土類酸硫化物シンチレータ用セラミック体がCdWO4基準の光熱出力の2.0倍以上の光熱出力を有する、請求項35に記載の方法。
- 希土類酸硫化物シンチレータ用セラミック体が3msで200ppm以下の残光、およびCdWO4基準の光熱出力の1.75倍以上の光熱出力を有する、請求項1に記載の方法。
- MがEu、Ce、Pr、Tb、Yb、Dy、Sm、Nd、およびHoからなる群からの少なくとも一つの希土類元素であり、Lnがそれらの群から選択される少なくとも一つの元素であり、および1×10-6<X<2×10-1である組成(M1-XLnX)2O2Sを有する希土類酸硫化物シンチレータ用セラミック体であって、理論密度の99%以上の密度、3msで200ppm以下の残光、およびCdWO4基準の光熱出力の1.75倍以上の光熱出力を有する希土類酸硫化物シンチレータ用セラミック体。
- 3msで100ppm以下の残光を有する、請求項38に記載の希土類酸硫化物シンチレータ用セラミック体。
- 3msで90ppm以下の残光を有する、請求項39に記載の希土類酸硫化物シンチレータ用セラミック体。
- CdWO4基準の光熱出力の1.9倍以上の光熱出力を有する、請求項38に記載の希土類酸硫化物シンチレータ用セラミック体。
- CdWO4基準の光熱出力の2.0倍以上の光熱出力を有する、請求項41に記載の希土類酸硫化物シンチレータ用セラミック体。
- CdWO4基準の光熱出力の2.2倍以上の光熱出力を有する、請求項42に記載の希土類酸硫化物シンチレータ用セラミック体。
- CdWO4基準の光熱出力の2.3倍以上の光熱出力を有する、請求項43に記載の希土類酸硫化物シンチレータ用セラミック体。
- MがY、La、およびGdからなる群から選択される、請求項38に記載の希土類酸硫化物シンチレータ用セラミック体。
- MがGdである、請求項45に記載の希土類酸硫化物シンチレータ用セラミック体。
- Lnが少なくともPrまたはTbを含有する、請求項38に記載の希土類酸硫化物シンチレータ用セラミック体。
- LnがさらにCeを含有する、請求項47に記載の希土類酸硫化物シンチレータ用セラミック体。
- MがEu、Ce、Pr、Tb、Yb、Dy、Sm、Nd、およびHoからなる群からの少なくとも一つの希土類元素であり、Lnがそれらの群から選択される少なくとも一つの元素であり、および1×10-6<X<2×10-1である組成(M1-XLnX)2O2Sを有する希土類酸硫化物シンチレータ用セラミック体であって、理論密度の99%以上の密度、シリコン光ダイオードにより測定される5msでの1000ppm以下の残光、およびCdWO4基準の光熱出力の1.75倍以上の光熱出力を有する希土類酸硫化物シンチレータ用セラミック体。
- 5msで900ppm以下の残光を有する、請求項49に記載の希土類酸硫化物シンチレータ用セラミック体。
- 5msで700ppm以下の残光を有する、請求項50に記載の希土類酸硫化物シンチレータ用セラミック体。
- 20msで200ppm以下の残光を有する、請求項49に記載の希土類酸硫化物シンチレータ用セラミック体。
- 20msで150ppm以下の残光を有する、請求項52に記載の希土類酸硫化物シンチレータ用セラミック体。
- CdWO4基準の光熱出力の1.9倍以上の光熱出力を有する、請求項49に記載の希土類酸硫化物シンチレータ用セラミック体。
- CdWO4基準の光熱出力の2.0倍以上の光熱出力を有する、請求項54に記載の希土類酸硫化物シンチレータ用セラミック体。
- CdWO4基準の光熱出力の2.2倍以上の光熱出力を有する、請求項54に記載の希土類酸硫化物シンチレータ用セラミック体。
- CdWO4基準の光熱出力の2.3倍以上の光熱出力を有する、請求項54に記載の希土類酸硫化物シンチレータ用セラミック体。
- MがY、La、およびGdからなる群から選択される、請求項49に記載の希土類酸硫化物シンチレータ用セラミック体。
- MがGdである、請求項58に記載の希土類酸硫化物シンチレータ用セラミック体。
- Lnが少なくともPrまたはTbを含有する、請求項49に記載の希土類酸硫化物シンチレータ用セラミック体。
- LnがさらにCeを含有する、請求項60に記載の希土類酸硫化物シンチレータ用セラミック体。
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US70233005P | 2005-07-25 | 2005-07-25 | |
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PCT/US2006/027850 WO2007015862A1 (en) | 2005-07-25 | 2006-07-18 | Rare earth oxysulfide scintillator and methods for producing same |
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US (2) | US7531109B2 (ja) |
EP (1) | EP1912916A1 (ja) |
JP (1) | JP5111371B2 (ja) |
KR (1) | KR20080038360A (ja) |
CN (1) | CN101253128B (ja) |
AU (1) | AU2006276196A1 (ja) |
CA (1) | CA2616098A1 (ja) |
IL (1) | IL188950A0 (ja) |
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JP2016041649A (ja) * | 2014-08-14 | 2016-03-31 | チンファ ユニバーシティTsinghua University | ガドリニウムオキシサルファイド(Gd2O2S)セラミックシンチレータ製造方法 |
JP2016041648A (ja) * | 2014-08-14 | 2016-03-31 | チンファ ユニバーシティTsinghua University | ガドリニウムオキシサルファイドセラミックシンチレータの製造方法 |
JPWO2015045870A1 (ja) * | 2013-09-25 | 2017-03-09 | 日立金属株式会社 | 希土類オキシ硫化物の製造方法、セラミックスシンチレータ及びその製造方法並びにシンチレータアレイ及び放射線検出器 |
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KR20080038360A (ko) | 2008-05-06 |
WO2007015862A1 (en) | 2007-02-08 |
EP1912916A1 (en) | 2008-04-23 |
RU2008106600A (ru) | 2009-09-10 |
JP5111371B2 (ja) | 2013-01-09 |
US8460578B2 (en) | 2013-06-11 |
US20090189121A1 (en) | 2009-07-30 |
US20070027025A1 (en) | 2007-02-01 |
CA2616098A1 (en) | 2007-02-08 |
US7531109B2 (en) | 2009-05-12 |
CN101253128B (zh) | 2011-09-14 |
AU2006276196A1 (en) | 2007-02-08 |
CN101253128A (zh) | 2008-08-27 |
IL188950A0 (en) | 2008-04-13 |
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