JP2009302461A - Substrate processing device, and substrate processing method - Google Patents

Substrate processing device, and substrate processing method Download PDF

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JP2009302461A
JP2009302461A JP2008157974A JP2008157974A JP2009302461A JP 2009302461 A JP2009302461 A JP 2009302461A JP 2008157974 A JP2008157974 A JP 2008157974A JP 2008157974 A JP2008157974 A JP 2008157974A JP 2009302461 A JP2009302461 A JP 2009302461A
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substrate
section
transport
conveyance
processed
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JP4824723B2 (en
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Tetsuya Sada
徹也 佐田
Yasumoto Ogata
庸元 緒方
Atsushi Nagata
篤史 永田
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Tokyo Electron Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715Changing the direction of the conveying path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736Loading to or unloading from a conveyor

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To suppress occurrence of development spotting by efficiently and smoothly performing operations to perform separated recovery of first processing liquid supplied to a substrate to be processed on a conveyance line of a flush level and replace it with second processing liquid. <P>SOLUTION: The substrate processing device includes: the conveyance line 2 of a flush level including a first conveyance section M1 having a horizontal conveyance path, a second conveyance section wherein an upward inclined conveyance path is formed from the horizontal conveyance path, and a third conveyance section wherein a downward inclined conveyance line connecting with the second conveyance section M2 is formed in a state wherein the section conveyance section M2 is inclined upward; a conveyance driving unit which drives a conveyance body 6; a first processing liquid supply unit 9 which supplies the first processing liquid D onto the substrate G in the first conveyance section M1; a second processing liquid supply unit 13 which supplies the second processing liquid W onto the substrate G in the third conveyance section M3; and an elevation means of elevating the conveyance body 6 laid in the second conveyance section M2 in a state wherein the substrate G to be processed is mounted in the second conveyance section M2 to form the upward inclined conveyance path connecting with the first conveyance section M1. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、被処理基板上に処理液を供給して所定の処理を行う基板処理技術に係り、特に基板を平流し方式で水平方向に搬送しながら液処理を行う基板処理装置及び基板処理方法に関する。   The present invention relates to a substrate processing technique for supplying a processing liquid onto a substrate to be processed and performing a predetermined processing, and in particular, a substrate processing apparatus and a substrate processing method for performing a liquid processing while transporting a substrate in a horizontal direction by a flat flow method. About.

最近、LCD(液晶表示ディスプレイ)製造におけるレジスト塗布現像処理システムでは、LCD用基板(たとえばガラス基板)の大型化に有利に対応できる現像方式として、コロを水平方向に敷設した搬送路上で基板を搬送しながら搬送中に現像、リンス、乾燥等の一連の現像処理工程を行うようにした、いわゆる平流し方式が普及している。このような平流し方式は、基板を回転運動させるスピンナ方式と較べて、大型基板の取扱いが簡単であり、ミストの発生ないし基板への再付着が少ない等の利点がある。   Recently, resist coating and development processing systems in LCD (liquid crystal display) manufacturing have been developed as a development method that can advantageously cope with the increase in size of LCD substrates (for example, glass substrates). On the other hand, a so-called flat-flow method is widely used in which a series of development processing steps such as development, rinsing, and drying are performed during conveyance. Such a flat flow method has advantages such as easier handling of a large substrate and less occurrence of mist or reattachment to the substrate, compared to a spinner method that rotates the substrate.

平流し方式を採用する従来の現像処理装置は、現像液の分別回収率を高めるために、たとえば特許文献1で開示されるように、平流しの搬送路において現像液供給部の下流側に基板を搬送方向で傾ける基板傾斜機構を設置し、現像液供給部で水平な基板上に現像液を盛ってそのまま平流しで基板を搬送路の下流側へ搬送し、所定時間後に搬送路上の所定位置で基板傾斜機構が基板を前向きまたは後向きに傾斜させて基板上の現像液を重力で落とし、下に落ちた現像液を現像液回収用のパンで受け集めるようにしている。   In order to increase the separation recovery rate of the developing solution, the conventional developing processing apparatus adopting the flat flowing method has a substrate on the downstream side of the developing solution supply section in the flat conveying path as disclosed in Patent Document 1, for example. The substrate tilting mechanism is installed to tilt the substrate in the transport direction, and the developer is supplied on the horizontal substrate by the developer supply unit, and the substrate is flown as it is to the downstream side of the transport path, and a predetermined position on the transport path after a predetermined time. Then, the substrate tilting mechanism tilts the substrate forward or backward, drops the developer on the substrate by gravity, and collects the developer that has dropped down on the pan for collecting the developer.

そして、基板傾斜機構が上記のような傾斜姿勢による液切りを一定時間内に済ませて基板を水平姿勢に戻すと、次に基板は下流側のリンス部へ平流しで送られ、そこでリンスノズルが水平姿勢の基板上にリンス液を噴き掛けることにより、基板上で現像液からリンス液への置換(現像停止)が行われる。このリンス部で基板から落ちた液はリンス液回収用のパンに受け集められる。そして、リンス処理の済んだ基板が下流側の乾燥部を平流しで通過する間に、エアナイフが水平姿勢の基板に搬送方向と逆向きで高圧のエア流を当てて液切りすることにより、基板表面が乾くようになっている。   When the substrate tilting mechanism finishes draining the liquid in the tilted posture as described above within a predetermined time and returns the substrate to the horizontal posture, the substrate is then sent to the downstream rinse section in a flat flow, where the rinse nozzle is By spraying the rinsing liquid onto the horizontal substrate, the replacement of the developing solution with the rinsing liquid is performed on the substrate (development is stopped). The liquid that has fallen from the substrate in the rinse section is collected in a rinse liquid collecting pan. Then, while the rinsed substrate passes through the downstream drying section in a flat flow, the air knife applies a high-pressure air flow to the horizontal substrate in a direction opposite to the conveying direction to drain the substrate. The surface is dry.

しかしながら、上記のような従来の現像処理装置にあっては、現像液を盛られた基板を搬送路上で停止させて水平状態から傾斜状態に姿勢変換し、傾斜姿勢で液切りを行った後に再び水平姿勢に戻して平流しの搬送を再開するという機構および一連の動作が結構煩雑で非効率であるという一面があった。さらに、現像液の液切りを開始してから下流側のリンス部で液置換つまり現像停止用のリンス処理を開始するまでの時間遅れが長いために、リンス処理を実行する前に基板の前端側から被処理面が乾いてしまって斑のしみが発生するという現像処理品質の低下も懸念されている。   However, in the conventional development processing apparatus as described above, the substrate on which the developer is stacked is stopped on the transport path, the posture is changed from the horizontal state to the inclined state, and after the liquid is drained in the inclined posture, again There was one aspect that the mechanism and a series of operations of returning to a horizontal posture and resuming the conveyance of a flat flow are quite complicated and inefficient. Furthermore, since there is a long time lag from the start of liquid removal of the developer to the start of the liquid replacement at the downstream rinse portion, that is, the development stop rinse process, the front side of the substrate before the rinse process is executed. Therefore, there is a concern that the quality of the development process is deteriorated such that the surface to be processed is dried and spots of spots occur.

このような課題に対し、本願出願人は、基板上の現像液をリンス液に効率よく置き換えることのできる現像ユニット(基板処理装置)を特許文献2において開示した。特許文献2に開示される現像ユニットの主要部を図7に模式的に示す。
図7に示される平流し搬送路90にあっては、水平姿勢で搬送される基板Gの被処理面に対し、現像部91において、現像液供給ノズル92から現像液Dが吐出され、被処理面全体が現像液Dにより液盛りされる。次いで基板Gは、リンス部93に搬送され、山なりに傾斜配置された搬送コロ(搬送路90)上を搬送されながら現像液Dが流し落とされ、リンス液供給ノズル94から純水等のリンス液Wが供給されることによりリンス処理が施される。
In response to such a problem, the applicant of the present application has disclosed a developing unit (substrate processing apparatus) in Patent Document 2 that can efficiently replace a developing solution on a substrate with a rinsing solution. The main part of the developing unit disclosed in Patent Document 2 is schematically shown in FIG.
In the flat flow conveyance path 90 shown in FIG. 7, the developing solution 91 discharges the developing solution D from the developing solution supply nozzle 92 to the processing surface of the substrate G conveyed in a horizontal posture, and the processing target is processed. The entire surface is filled with developer D. Next, the substrate G is transported to the rinsing section 93, and the developer D is poured off while being transported on a transport roller (transport path 90) that is inclined in a mountain-like manner, so that rinse water such as pure water is rinsed from the rinse liquid supply nozzle 94. The rinsing process is performed by supplying the liquid W.

即ち、このリンス部93においては、基板Gが山なりに傾斜した搬送路90を通過することにより、基板Gの先端方向がより高くなる状態に傾斜して基板上の現像液Dが後方へ流れ落ちる。
そして、基板先端が山なりの搬送路90を下る状態になると、その上方に設けられたリンス液供給ノズル94から供給されるリンス液Wによって被処理面がリンス洗浄される。
That is, in the rinsing section 93, the substrate G passes through the conveying path 90 inclined in a mountain, so that the tip direction of the substrate G is inclined to a higher state and the developer D on the substrate flows backward. .
Then, when the front end of the substrate goes down the mountain-shaped conveyance path 90, the surface to be processed is rinsed with the rinsing liquid W supplied from the rinsing liquid supply nozzle 94 provided thereabove.

このように、基板上の現像液Dを回収後、時間を長く空けることなく効率的に現像液Dをリンス液Wに置換し、それにより、リンス処理を実行する前に基板Gの前端側から被処理面が乾くことがなく、現像液Dを流し落とし、斑のしみの発生を防止するようになされている。
特開2003−7582号公報 特開2007−5695号公報
As described above, after collecting the developing solution D on the substrate, the developing solution D is efficiently replaced with the rinsing solution W without taking a long time, and thereby, from the front end side of the substrate G before the rinsing process is executed. The surface to be processed is not dried, and the developer D is poured off to prevent the occurrence of blotches.
JP 2003-7582 A JP 2007-5695 A

ところで近年、例えばLCD製造工程におけるアモルファスSiTFT(アモルファスシリコン薄膜トランジスタ)の形成においては、露光工程の短縮のため、ハーフトーン露光(以下、ハーフ露光と呼ぶ)を用いた方法が多く採用されている。
ハーフ露光とは、図8(a)に示すように、光の透過率に差が設けられたハーフトーンマスク150を用いて基板G1上のレジスト膜Rに露光処理を施すものである。この処理により現像後、図8(b)に示すように、異なる膜厚(薄膜部R1と厚膜部R2)を有するレジストパターンRが得られる。
In recent years, for example, in the formation of amorphous Si TFT (amorphous silicon thin film transistor) in the LCD manufacturing process, a method using half-tone exposure (hereinafter referred to as half exposure) is often employed to shorten the exposure process.
As shown in FIG. 8A, half-exposure is to perform an exposure process on the resist film R on the substrate G1 using a halftone mask 150 having a difference in light transmittance. After development by this processing, as shown in FIG. 8B, resist patterns R having different film thicknesses (thin film portion R1 and thick film portion R2) are obtained.

しかしながら、このハーフ露光された基板を特許文献2に開示の現像ユニットにより現像処理すると、ハーフマスク部により露光されて薄膜部R1を形成するべき部位において現像斑が生じる虞があった。
即ち、図7に示す現像ユニットにあっては、基板Gの先端部が、リンス部93の山なりの搬送路に差し掛かると、基板Gは搬送されながら先端部から上方に向けて徐々に傾き、図9(a)に示すように基板先端付近の現像液Dが後方に流れ、引き始める。このとき、基板先端辺からぶら下がるように、現像液が引いた跡により複数の円弧Cが基板幅方向に並んで描かれる。
However, when this half-exposed substrate is developed by the developing unit disclosed in Patent Document 2, there is a possibility that development spots may occur at a portion where the thin mask portion is to be exposed by the half mask portion.
That is, in the developing unit shown in FIG. 7, when the leading end of the substrate G reaches the mountain-shaped transport path of the rinse portion 93, the substrate G is gradually tilted upward from the leading end while being transported. As shown in FIG. 9A, the developing solution D near the front end of the substrate flows backward and starts to be pulled. At this time, a plurality of arcs C are drawn side by side in the substrate width direction by the traces drawn by the developer so as to hang from the front end side of the substrate.

この円弧は、基板Gが山なりの搬送路90を上昇するにつれ、図9(b)に示すように下方に伸び、基板先端がリンス供給ノズル94によりリンス液Wを供給されるまでには図9(c)に示すように隣接する円弧Cの接線C1として現像液Dが残った状態となる。ここで、この線状の現像液残り(接線C1)が図8(b)に示したようなハーフ露光部(薄膜部R1を形成するべき部位)上に存在すると、リンス液Wにより流し落とされるまでの時間が掛かり、その部分で必要以上に現像が進行し、現像斑が発生するという課題があった。   This arc extends downward as the substrate G rises in the mountain-shaped conveyance path 90, and until the tip of the substrate is supplied with the rinsing liquid W by the rinse supply nozzle 94, as shown in FIG. As shown in FIG. 9C, the developer D remains as a tangent C1 of the adjacent arc C. Here, if this linear developer remaining (tangent C1) is present on the half exposure portion (the portion where the thin film portion R1 is to be formed) as shown in FIG. 8B, it is washed away by the rinsing liquid W. It took a long time to develop, and the development progressed more than necessary at that portion, and there was a problem that development spots occurred.

本発明は、上記のような従来技術の問題点に鑑みてなされたものであり、平流しの搬送ライン上で被処理基板に供給した第1の処理液を分別回収して第2の処理液に置き換える動作を効率よくスムースに行い、現像斑の発生を抑制することのできる基板処理装置及び基板処理方法を提供することを目的とする。   The present invention has been made in view of the above-described problems of the prior art, and separates and collects the first processing liquid supplied to the substrate to be processed on the flat-carrying transfer line, thereby providing the second processing liquid. An object of the present invention is to provide a substrate processing apparatus and a substrate processing method which can efficiently and smoothly perform the replacement operation to suppress development spots.

前記した課題を解決するために、本発明に係る基板処理装置は、被処理基板に第1の処理液を供給して所定の液処理を施し、前記第1の処理液を回収して第2の処理液により洗浄する基板処理装置であって、前記被処理基板を搬送するための搬送体を所定の搬送方向に敷設しており、前記搬送方向において実質的に水平な搬送路を有する第1の搬送区間と、前記第1の搬送区間に続く上り傾斜の搬送路を水平な搬送路から形成可能な第2の搬送区間と、前記第2の搬送区間が上り傾斜の状態で、前記第2の搬送区間に続く下り傾斜の搬送路を形成する第3の搬送区間とを含む平流しの搬送ラインと、前記搬送ライン上で前記基板を搬送するために前記搬送体を駆動する搬送駆動部と、前記第1の搬送区間内で前記基板上に第1の処理液を供給する第1の処理液供給部と、前記第3の搬送区間内で前記基板上に第2の処理液を供給する第2の処理液供給部と、前記第2の搬送区間に前記被処理基板が載置された状態で、該第2の搬送区間に敷設された搬送体を上昇移動させ、前記第1の搬送区間に続く上り傾斜の搬送路を形成する昇降手段とを備えることに特徴を有する。   In order to solve the above-described problems, a substrate processing apparatus according to the present invention supplies a first processing liquid to a substrate to be processed, performs a predetermined liquid processing, collects the first processing liquid, and performs a second processing. A substrate processing apparatus for cleaning with the processing liquid, wherein a transport body for transporting the substrate to be processed is laid in a predetermined transport direction, and has a transport path that is substantially horizontal in the transport direction. A second transport section that can form an upwardly inclined transport path following the first transport section from a horizontal transport path, and the second transport section in an upwardly inclined state. And a third conveyance section that forms a downwardly inclined conveyance path following the conveyance section, and a conveyance drive unit that drives the conveyance body to convey the substrate on the conveyance line; , Supplying a first processing liquid onto the substrate in the first transfer section A first processing liquid supply section, a second processing liquid supply section for supplying a second processing liquid onto the substrate in the third transport section, and the substrate to be processed in the second transport section. And a lifting means for ascending and moving the transport body laid in the second transport section to form an upwardly inclined transport path following the first transport section. Have.

このように構成することにより、被処理基板が第2の搬送区間に載置されると上り傾斜の搬送路を形成し、第2の処理液を供給する直前に上り傾斜として基板上から第1の処理液を後端に向けて流し落とし、第1の処理液が引いた基板先端から順に第2の処理液を供給することができる。
これにより、基板上の第1の処理液を直ぐさま第2の処理液に置換することができる。即ち、従来のように現像液(第1の処理液)が流れ落ちた後、斑上に残った状態で放置される時間が殆ど無く、現像斑の発生を抑制することができる。
With this configuration, when the substrate to be processed is placed in the second transport section, an upwardly inclined transport path is formed, and the first tilt from the top of the substrate as an upward slope immediately before supplying the second processing liquid. The second processing liquid can be supplied in order from the front end of the substrate drawn by the first processing liquid.
Thereby, the 1st processing liquid on a substrate can be immediately replaced with the 2nd processing liquid. In other words, after the developer (first processing solution) has flowed down as in the prior art, there is almost no time left in the state of remaining on the spots, and the occurrence of development spots can be suppressed.

また、前記搬送ラインにおいて、前記昇降手段により上り傾斜となされた前記第2の搬送区間と、下り傾斜の前記第3の搬送区間とにより形成される隆起部の頂上には、水平部が形成されることが望ましい。
このように水平部を設けることにより、第1の処理液の表面張力により、重力による流下力を抑制することができ、第2の処理液の供給直前まで、基板全体に対し第1の処理液による所定の処理を施すことができる。
Further, in the transfer line, a horizontal portion is formed on the top of the raised portion formed by the second transfer section inclined upward by the elevating means and the third transfer section inclined downward. It is desirable.
By providing the horizontal portion in this way, the flow force due to gravity can be suppressed by the surface tension of the first processing liquid, and the first processing liquid is applied to the entire substrate until just before the second processing liquid is supplied. A predetermined process can be performed.

また、前記被処理基板上に、前記第1の処理液が供給された後、前記第2の処理液が供給される前に、前記搬送ライン上を搬送される被処理基板に対し、該基板上に残る第1の処理液を均す表面均し手段を備えることが望ましい。尚、前記表面均し手段は、基板幅方向に沿って設けられ、基板表面に接触することにより該基板表面を均すローラ、または、基板表面に所定のガス流を当てることにより該基板表面を均すエアナイフ、または、基板表面に接触することにより該基板表面を均す板部材が好ましい。
このように表面均し手段を設けることにより、第2の処理液が供給される基板上の部位から第1の処理液を殆ど除去することができ、これにより第1の処理液と第2の処理液とが混合することなく、それによる斑の発生を抑制し、また、第1の処理液と第2の処理液の分別回収を容易にすることができる。
Further, after the first processing liquid is supplied onto the substrate to be processed, before the second processing liquid is supplied, the substrate is transferred to the substrate to be processed which is transferred on the transfer line. It is desirable to provide surface leveling means for leveling the first treatment liquid remaining on the surface. The surface leveling means is provided along the width direction of the substrate, and a roller for leveling the substrate surface by contacting the substrate surface, or by applying a predetermined gas flow to the substrate surface. An air knife for leveling or a plate member for leveling the substrate surface by contacting the substrate surface is preferred.
By providing the surface leveling means in this way, the first processing liquid can be almost removed from the portion on the substrate to which the second processing liquid is supplied, and thereby the first processing liquid and the second processing liquid can be removed. Without mixing with the processing liquid, it is possible to suppress the occurrence of spots, and to facilitate the separate collection of the first processing liquid and the second processing liquid.

また、前記昇降手段の駆動を制御する制御手段と、前記第2の搬送区間を搬送される被処理基板が所定位置に達したことを検出し、検出信号を前記制御手段に出力する基板検出手段とを備え、前記制御手段は、前記基板検出手段から前記検出信号を受け取ると、前記昇降手段を駆動させ、前記第2の搬送区間に、前記第1の搬送区間に続く上り傾斜の搬送路を形成させることが望ましい。
また、前記第3の搬送区間に敷設された搬送体は、前記昇降手段によって上昇移動可能に設けられ、前記制御手段は、前記基板検出手段から前記検出信号を受け取ると、前記昇降手段を駆動させ、前記第3の搬送区間に、前記第2の搬送区間に続く下り傾斜の搬送路を形成させることが望ましい。
このように構成することにより、第2の搬送区間の所定位置に基板が差し掛かったことを正確なタイミングで検出することができ、その後の処理を効果的に行うことができる。
A control unit that controls driving of the lifting unit; and a substrate detection unit that detects that a substrate to be processed transported in the second transport section has reached a predetermined position and outputs a detection signal to the control unit. When the control means receives the detection signal from the substrate detection means, the control means drives the elevating means, and an upward inclined conveyance path that follows the first conveyance section is provided in the second conveyance section. It is desirable to form.
In addition, the transport body laid in the third transport section is provided so as to be movable up and down by the lifting and lowering means, and the control means drives the lifting and lowering means when receiving the detection signal from the substrate detecting means. It is desirable to form a downwardly inclined transport path following the second transport section in the third transport section.
With this configuration, it is possible to detect at a precise timing that the substrate has reached a predetermined position in the second transport section, and subsequent processing can be performed effectively.

また、前記した課題を解決するために、本発明に係る基板処理方法は、被処理基板に第1の処理液を供給して所定の液処理を施し、前記第1の処理液を回収して第2の処理液により洗浄する基板処理方法であって、第1の搬送区間を水平姿勢で搬送される被処理基板に対し、前記第1の処理液を供給するステップと、前記第1の処理液が供給された被処理基板を水平姿勢のまま第2の搬送区間に搬送するステップと、前記第2の搬送区間を搬送される前記被処理基板が所定の位置に達したことを検出するステップと、前記検出がなされた後、前記第2の搬送区間に上り傾斜の搬送路を形成するステップと、前記上り傾斜の第2の搬送区間に続けて形成された下り傾斜の搬送路をなす第3の搬送区間に前記被処理基板を搬送し、前記被処理基板に前記第2の処理液を供給するステップとを実行することに特徴を有する。尚、前記第2の搬送区間を搬送される前記被処理基板が所定の位置に達したことの検出がなされた後、前記第2の搬送区間に上り傾斜の搬送路を形成するステップと同時に、前記第3の搬送区間に前記第2の搬送区間に続く下り傾斜の搬送路を形成するステップが実行されることが望ましい。
このような方法により、基板上の第1の処理液を直ぐさま第2の処理液に置換することができる。即ち、従来のように現像液(第1の処理液)が流れ落ちた後、斑上に残った状態で放置される時間が殆ど無く、現像斑の発生を抑制することができる。
In order to solve the above-described problem, a substrate processing method according to the present invention supplies a first processing liquid to a substrate to be processed, performs a predetermined liquid processing, and collects the first processing liquid. A substrate processing method for cleaning with a second processing liquid, the step of supplying the first processing liquid to a substrate to be processed transported in a horizontal posture in a first transport section; and the first processing A step of transporting the substrate to be processed supplied with the liquid to the second transport section in a horizontal posture, and a step of detecting that the substrate to be processed transported through the second transport section has reached a predetermined position. And after the detection, a step of forming an up-inclined conveyance path in the second conveyance section, and a first step of forming a down-inclined conveyance path formed following the up-inclined second conveyance section. The substrate to be processed is transferred to a transfer section 3 and the substrate to be processed Characterized in that run and providing the second treatment liquid. In addition, after detecting that the substrate to be processed transported in the second transport section has reached a predetermined position, simultaneously with the step of forming an upwardly inclined transport path in the second transport section, It is preferable that a step of forming a downwardly inclined conveyance path following the second conveyance section is performed in the third conveyance section.
By such a method, the first processing liquid on the substrate can be immediately replaced with the second processing liquid. In other words, after the developer (first processing solution) has flowed down as in the prior art, there is almost no time left in the state of remaining on the spots, and the occurrence of development spots can be suppressed.

また、前記第2の搬送区間を搬送される前記被処理基板が所定の位置に達したことを検出するステップの後、被処理基板の搬送を停止するステップを実行し、前記第2の搬送区間に上り傾斜の搬送路を形成するステップを実行することが望ましい。
このような制御により、第2の処理液の供給直前まで、基板全体に対し第1の処理液による所定の処理を施すことができる。
In addition, after the step of detecting that the substrate to be processed transported in the second transport section has reached a predetermined position, a step of stopping the transport of the substrate to be processed is performed, and the second transport section It is desirable to execute a step of forming an upwardly inclined conveyance path.
By such control, a predetermined process with the first processing liquid can be performed on the entire substrate until just before the supply of the second processing liquid.

また、前記第2の搬送区間に上り傾斜の搬送路が形成された後、前記第3の搬送区間に搬送される前記被処理基板の速度が上昇制御されることが望ましい。
このような制御により、第1の処理液が基板上から除去された直後に、基板上に直ぐに第2の処理液を供給することができ、より確実に現像斑の発生を抑制することができる。
In addition, it is preferable that the speed of the substrate to be processed transported to the third transport section is controlled to increase after an upwardly inclined transport path is formed in the second transport section.
By such control, immediately after the first processing liquid is removed from the substrate, the second processing liquid can be supplied immediately onto the substrate, and the occurrence of development spots can be more reliably suppressed. .

本発明によれば、平流しの搬送ライン上で被処理基板に供給した第1の処理液を分別回収して第2の処理液に置き換える動作を効率よくスムースに行い、現像斑の発生を抑制することのできる基板処理装置及び基板処理方法を得ることができる。   According to the present invention, the operation of separating and recovering the first processing liquid supplied to the substrate to be processed on the flat-flowing conveyance line and replacing it with the second processing liquid is performed efficiently and smoothly, and the occurrence of development spots is suppressed. A substrate processing apparatus and a substrate processing method that can be performed can be obtained.

以下、本発明の基板処理装置及び基板処理方法にかかる実施の形態につき、図に基づいて説明する。本発明の基板処理装置は、たとえばLCD用のガラス基板を被処理基板(以下、基板と呼ぶ)とし、LCD製造プロセスにおいてフォトリソグラフィー工程の中の洗浄、レジスト塗布、プリベーク、現像およびポストベーク等の各処理を行う塗布現像処理システムの一部構成に適用することができる。
具体的には、基板上にフォトレジストが塗布され、マスクパターンを介して露光処理が施された基板に現像及びリンス処理を施す現像ユニット(DEV)に適用することができる。以下、図を参照して本発明を現像ユニット(DEV)に適用した一実施形態を説明する。
Hereinafter, embodiments of the substrate processing apparatus and the substrate processing method of the present invention will be described with reference to the drawings. The substrate processing apparatus of the present invention uses, for example, a glass substrate for LCD as a substrate to be processed (hereinafter referred to as a substrate), and performs cleaning, resist coating, pre-baking, development, post-baking, etc. in the photolithography process in the LCD manufacturing process. The present invention can be applied to a partial configuration of a coating and developing processing system that performs each processing.
Specifically, the present invention can be applied to a development unit (DEV) that applies development and rinsing processing to a substrate that has been coated with a photoresist and subjected to exposure processing through a mask pattern. Hereinafter, an embodiment in which the present invention is applied to a developing unit (DEV) will be described with reference to the drawings.

図1に、この実施形態における現像ユニット(DEV)1の全体構成を模式的に示す。この現像ユニット(DEV)1は、図示するように、プロセスラインAに沿って水平方向(X方向)に延びる平流しの搬送ライン2を設置しており、この搬送ライン2に沿って上流側から順に現像部3、リンス部4および乾燥部5を設けている。   FIG. 1 schematically shows the overall configuration of the developing unit (DEV) 1 in this embodiment. As shown in the figure, the developing unit (DEV) 1 is provided with a flat flow conveying line 2 extending in the horizontal direction (X direction) along the process line A, and from the upstream side along the conveying line 2. A developing unit 3, a rinsing unit 4 and a drying unit 5 are provided in this order.

搬送ライン2は、基板Gを、その被処理面を上に向けた仰向けの姿勢として所定速度(例えば60mm/s)で搬送するためのコロ6(搬送体)を搬送方向(X方向)に一定間隔(例えば100mm間隔)で敷設しており、各コロ6は、たとえば電気モータを有する搬送駆動部(図示せず)に歯車機構またはベルト機構等の伝動機構を介して接続されている。   The transfer line 2 has a roller 6 (transport body) for transporting the substrate G at a predetermined speed (for example, 60 mm / s) with the surface to be processed facing upward, in a transport direction (X direction). The rollers 6 are laid at intervals (e.g., 100 mm intervals), and each roller 6 is connected to a conveyance drive unit (not shown) having an electric motor, for example, via a transmission mechanism such as a gear mechanism or a belt mechanism.

この搬送ライン2は、搬送方向(X方向)において始点から終点まで同じ高さ位置で続いているのではなく、途中で所定の箇所にコロ6の上昇制御により隆起形成される第1の隆起部2a,コロ6の配置が固定された第2の隆起部2b,および段差部2cを有しており、図1に示すように、搬送方向(X方向)の一サイドから見た搬送路の形状に応じて9つの搬送区間M1,M2,M3,M4,M5,M6,M7,M8,M9に区分できる。   The transport line 2 does not continue at the same height position from the start point to the end point in the transport direction (X direction), but is a first bulge formed by bulging control of the roller 6 at a predetermined position on the way. 2a, a second raised portion 2b in which the arrangement of the rollers 6 is fixed, and a stepped portion 2c. As shown in FIG. 1, the shape of the conveyance path viewed from one side in the conveyance direction (X direction) According to, it can be divided into nine transport sections M1, M2, M3, M4, M5, M6, M7, M8, and M9.

第1の搬送区間M1は、多段ユニット部(TB)7のパスユニット(PASS)内の始点P0から現像部3内の出口よりも少し手前(上流側)の位置に設定された第1の区間変更点P1までの区間であり、始点P0の高さ位置を保ったままほぼ水平一直線に延びる水平搬送路を有している。
第2の搬送区間M2は、上記第1の区間変更点P1から現像部3とリンス部4との境界付近の位置に設定された第2の区間変更点P2までの区間であり、コロ6の高さ位置を上昇制御することによって、始点P0の高さ位置よりも所定量(たとえば10〜25mm)高くすることのできる第1の隆起部2aの頂上まで所定の傾斜角(たとえば2〜5°)で上る上り傾斜の搬送路を有している。
The first conveyance section M1 is a first section set at a position slightly upstream (upstream side) from the start point P0 in the pass unit (PASS) of the multi-stage unit section (TB) 7 to the exit in the developing section 3. This is a section up to the change point P1, and has a horizontal conveyance path extending substantially in a horizontal straight line while maintaining the height position of the start point P0.
The second conveyance section M2 is a section from the first section change point P1 to the second section change point P2 set at a position near the boundary between the developing unit 3 and the rinse unit 4. By controlling the elevation of the height position, a predetermined inclination angle (for example, 2 to 5 °) is reached to the top of the first raised portion 2a that can be made a predetermined amount (for example, 10 to 25 mm) higher than the height position of the starting point P0. ) And an upwardly inclined conveying path.

第3の搬送区間M3は、上記第2の区間変更点P2からリンス部4の入口付近に設定された第3の区間変更点P3までの区間であり、コロ6の高さ位置を上昇制御することによって、上記第1の隆起部2aの頂上からそれよりも所定量(たとえば10〜25mm)低い第1のボトム位置まで所定の傾斜角(たとえば2〜5°)で下る下り傾斜の搬走路を有している。
なお、この第1の隆起部2a(コロ6の上昇制御により隆起した場合)において、搬送ライン2は、その頂上にフラット(水平)な水平部Hを有する台形の形状になっている。
The third conveyance section M3 is a section from the second section change point P2 to the third section change point P3 set in the vicinity of the entrance of the rinse section 4, and controls the height position of the roller 6 to be raised. Thus, the downwardly inclined runway that descends at a predetermined inclination angle (for example, 2 to 5 °) from the top of the first raised portion 2a to a first bottom position that is lower by a predetermined amount (for example, 10 to 25 mm) than that. have.
In addition, in this 1st protruding part 2a (when raised by the raising control of the roller 6), the conveyance line 2 has a trapezoidal shape having a flat (horizontal) horizontal part H on the top.

第4の搬送区間M4は、リンス部4内で入口付近の上記第3の区間変更点P3から内奥の所定位置に設定された第4の区間変更点P4までの区間であり、上記第1のボトム位置と同じ高さでほぼ水平一直線に延びる水平搬送路を有している。   The fourth transport section M4 is a section from the third section change point P3 near the entrance to the fourth section change point P4 set at a predetermined position inside the rinse section 4 in the vicinity of the entrance. And a horizontal conveyance path extending in a substantially horizontal straight line at the same height as the bottom position.

第5の搬送区間M5は、リンス部4内で上記第4の区間変更点P4からそれよりも所定の距離だけ下流側の位置に設定された第5の区間変更点P5までの区間であり、第1のボトム位置よりも所定量(たとえば10〜25mm)高い第2の隆起部2bの頂上まで所定の傾斜角(たとえば2〜5°)で上る上り傾斜の搬走路を有している。
第6の搬送区間M6は、リンス部4内で上記第5の区間変更点P5からそれよりも所定の距離だけ下流側の位置に設定された第6の区間変更点P6までの区間であり、上記第2の隆起部2bの頂上からそれよりも所定量(たとえば10〜25mm)低い第2のボトム位置まで所定の傾斜角(たとえば2〜5°)で下る下り傾斜の搬走路を有している。
The fifth transport section M5 is a section from the fourth section change point P4 to a fifth section change point P5 set at a position downstream by a predetermined distance from the fourth section change point P4 in the rinsing unit 4. The transport path has an upward slope that rises at a predetermined inclination angle (for example, 2 to 5 °) to the top of the second raised portion 2b that is a predetermined amount (for example, 10 to 25 mm) higher than the first bottom position.
The sixth transport section M6 is a section from the fifth section change point P5 to a sixth section change point P6 set at a position downstream by a predetermined distance from the fifth section change point P5 in the rinse unit 4, A downwardly inclined traveling path that descends at a predetermined inclination angle (for example, 2 to 5 °) from the top of the second raised portion 2b to a second bottom position that is lower by a predetermined amount (for example, 10 to 25 mm) than that. ing.

第7の搬送区間M7は、リンス部4内で上記第6の区間変更点P6からそれよりも所定の距離だけ下流側の位置つまり出口より少し手前(上流側)の位置に設定された第7の区間変更点P7までの区間であり、上記第2のボトム位置と同じ高さでほぼ水平一直線に延びる水平搬送路を有している。
第8の搬送区間M8は、上記第7の区間変更点P7からリンス部4と乾燥部5との境界付近に設定された第8の区間変更点P8までの区間であり、上記第2のボトム位置よりも所定量(たとえば10〜25mm)高い段差部2cの上段位置まで所定の傾斜角(たとえば2〜5°)で上る上り傾斜の搬走路を有している。
The seventh transport section M7 is a seventh position set in the rinsing section 4 at a position that is a predetermined distance from the sixth section change point P6, that is, a position slightly upstream (upstream) from the outlet. And a horizontal conveyance path extending in a substantially horizontal line at the same height as the second bottom position.
The eighth transport section M8 is a section from the seventh section change point P7 to the eighth section change point P8 set near the boundary between the rinse section 4 and the drying section 5, and the second bottom section It has an upwardly inclined traveling path that rises at a predetermined inclination angle (for example, 2 to 5 °) to the upper position of the stepped portion 2c that is a predetermined amount (for example, 10 to 25 mm) higher than the position.

第9の搬送区間M9は、上記第8の区間変更点P8から乾燥部5および脱色プロセス部8を通って後段の処理部まで至る区間であり、上記段差部2cの上段位置の高さを一定に保ったまま水平一直線に延びる水平搬走路を有している。   The ninth transport section M9 is a section that extends from the eighth section change point P8 through the drying section 5 and the decoloring process section 8 to the subsequent processing section, and the height of the upper position of the step section 2c is constant. It has a horizontal runway extending in a horizontal straight line while being maintained at the same position.

また、現像部3においては、第1の搬送区間M1内の所定位置に、搬送ライン2上をコロ搬送で移動する水平姿勢の基板Gに向けて上方から基準濃度の現像液(第1の処理液)を吐出する第1の処理液供給部としての現像液供給ノズル(以下、「現像ノズル」と略称する。)9が搬送方向に沿って1本または複数本配置されている。各現像ノズル9は、たとえばスリット状の吐出口または1列に配置された多数の微細径吐出口を有する長尺型のノズルからなり、図示しない現像液供給源から配管を介して現像液を給液されるようになっている。   Further, in the developing unit 3, a developer having a reference concentration (first processing) is directed from above toward a predetermined position in the first transport section M1 toward the horizontal substrate G that moves by roller transport on the transport line 2. One or a plurality of developing solution supply nozzles (hereinafter abbreviated as “developing nozzles”) 9 serving as a first processing solution supply unit that discharges (liquid) are arranged in the transport direction. Each developing nozzle 9 is composed of, for example, a slit-shaped discharge port or a long nozzle having a large number of fine-diameter discharge ports arranged in a row, and the developer is supplied from a developer supply source (not shown) through a pipe. It is supposed to be liquid.

現像部3内には、搬送ライン2の下に落ちた現像液を受け集めるためのパン10も設けられている。このパン10の排液口は排液管11を介して現像液再利用機構12に通じている。現像液再利用機構12は、現像液ノズル9により基板G上に現像液を盛る際にこぼれ落ちた現像液をパン10および排液管11を介して回収し、回収した現像液に原液や溶媒を加え、基準濃度に調整したリサイクルの現像液を前記現像液供給源に送るようになっている。   In the developing unit 3, a pan 10 is provided for collecting the developer that has fallen under the transport line 2. The drainage port of the pan 10 communicates with the developer reuse mechanism 12 via the drainage pipe 11. The developer reuse mechanism 12 collects the developer spilled when the developer is deposited on the substrate G by the developer nozzle 9 through the pan 10 and the drain tube 11, and the stock solution and the solvent are added to the collected developer. In addition, a recycled developer adjusted to a reference density is sent to the developer supply source.

また、リンス部4においては、入口付近の第3の搬送区間M3内の所定位置に、搬送ライン2の前記第1の隆起部2aの下り斜面を通過する基板Gに向けて上方から液置換(現像停止)用のリンス液(第2の処理液)を吐出する第2の処理液供給部としての第1のリンス液供給ノズル(以下、「リンスノズル」と略称する。)13が搬送方向に沿って1本または複数本配置されている。   In the rinsing unit 4, liquid replacement from above is performed at a predetermined position in the third transfer section M 3 near the entrance toward the substrate G passing through the down slope of the first raised portion 2 a of the transfer line 2 ( A first rinsing liquid supply nozzle (hereinafter abbreviated as “rinsing nozzle”) 13 as a second processing liquid supply unit that discharges a rinsing liquid (second processing liquid) for development stop) is provided in the transport direction. One or more are arranged along.

また、中心部の第5の搬送区間M5内の所定位置に、搬送ライン2の前記第2の隆起部2bの上り斜面を通過する基板Gに向けて上方から洗浄用のリンス液を吐出する第2のリンスノズル14が搬送方向に沿って1本または複数本配置されている。
また、その下流側隣の第6の搬送区間M6内の所定位置に、搬送ライン2の第2の隆起部2bの下り斜面を通過する基板Gに向けて上方から仕上げ洗浄用のリンス液を吐出する第3のリンスノズル15が搬送方向に沿って1本または複数本配置されている。
In addition, a rinsing liquid for cleaning is discharged from above toward the substrate G passing through the ascending slope of the second raised portion 2b of the transfer line 2 at a predetermined position in the fifth transfer section M5 in the center. Two or more rinse nozzles 14 are arranged along the transport direction.
Further, a rinse liquid for finishing cleaning is discharged from above to a predetermined position in the sixth transport section M6 adjacent to the downstream side toward the substrate G passing through the descending slope of the second raised portion 2b of the transport line 2. One or more third rinse nozzles 15 are arranged along the transport direction.

さらに、出口付近にて第8の搬送区間M8内の所定位置に、搬送ライン2の上り段差部2cを上る基板Gに向けて上方から最終洗浄用のリンス液を吐出する第4のリンスノズル16が搬送方向に沿って1本または複数本配置されている。各リンスノズル13,14,15,16は、たとえば前記現像液ノズル9と同様の構成を有する長尺型ノズルからなり、図示しないリンス液供給源から配管を介してリンス液を給液されるようになっている。   Further, a fourth rinse nozzle 16 that discharges a rinse liquid for final cleaning from above toward a substrate G that goes up the ascending step 2c of the transport line 2 at a predetermined position in the eighth transport section M8 near the outlet. Are arranged along the conveying direction. Each of the rinsing nozzles 13, 14, 15, 16 is composed of a long nozzle having the same configuration as the developer nozzle 9, for example, and is supplied with a rinsing liquid from a rinsing liquid supply source (not shown) via a pipe. It has become.

リンス部4内には、搬送ライン2の下に落ちたリンス液を受け集めるためのパン17が設けられている。このパン17の排液口は排液管18を介してリンス液回収部(図示せず)に通じている。図示省略するが、搬送ライン2の下から基板Gの下面に対して洗浄用のリンス液を噴き掛ける下部リンスノズルを設けることもできる。   In the rinse section 4, a pan 17 is provided for collecting the rinse liquid that has fallen under the transport line 2. The drain port of the pan 17 communicates with a rinse liquid recovery unit (not shown) via a drain pipe 18. Although not shown in the drawing, a lower rinse nozzle that sprays a rinse solution for cleaning onto the lower surface of the substrate G from below the transfer line 2 may be provided.

乾燥部5においては、第9の搬送区間M9の始端付近の所定位置に、搬送ライン2の前記段差部2cを上ってきた直後の基板Gに向けて上方から搬送方向と逆向きに液切りないし乾燥用の高圧ガス流(通常はエア流)を当てる長尺型のガスノズルまたはエアナイフ20が搬送方向に沿って1本または複数本配置されている。搬送ライン2の下から基板Gの下面に向けて液切りないし乾燥用の高圧ガス流を当てる下部エアナイフ(図示せず)も設置可能である。また、乾燥部5内で搬送ライン2の下に落ちた液を受け集めるためのパン(図示せず)を設けてもよい。
下流側隣の脱色プロセス部8には、搬送ライン2上をコロ搬送で移動する基板Gに向けて上方から脱色処理用のi線(波長365nm)を照射するi線照射ユニット(i−UV)21が設けられている。
In the drying unit 5, the liquid is drained from above toward the substrate G immediately after the stepped portion 2c of the transfer line 2 at a predetermined position near the start end of the ninth transfer section M9 in the direction opposite to the transfer direction from above. One or a plurality of long gas nozzles or air knives 20 that apply a high-pressure gas flow (usually an air flow) for drying are arranged along the transport direction. A lower air knife (not shown) for applying a high-pressure gas flow for draining or drying from the bottom of the transfer line 2 toward the lower surface of the substrate G can also be installed. Moreover, you may provide the bread | pan (not shown) for collecting the liquid which fell under the conveyance line 2 in the drying part 5. FIG.
An i-ray irradiation unit (i-UV) that irradiates decoloring i-line (wavelength 365 nm) from above toward the substrate G moving on the conveyance line 2 by roller conveyance on the decolorization process unit 8 adjacent to the downstream side. 21 is provided.

また、現像ユニット(DEV)1は、一体的なハウジング30内に現像部3,リンス部4および乾燥部5を収容しており、異なる処理部間の境界には搬送ライン2に沿った周囲の空間を上流側と下流側とに隔てるための鉛直方向に延在する隔壁30a,30bを設けている。より詳細には、現像部3とリンス部4との境界つまり第2の搬送区間M2と第3の搬送区間M3との境界付近に隔壁30aが設けられ、リンス部4と乾燥部5との境界つまり第8の搬送区間M8と第9の搬送区間M9との境界付近に隔壁30bが設けられる。各隔壁30a,30bには、搬送ライン2を通す開口31,32がそれぞれ形成されている。   Further, the developing unit (DEV) 1 accommodates the developing unit 3, the rinsing unit 4 and the drying unit 5 in an integral housing 30, and the boundary between the different processing units is a peripheral line along the transport line 2. Partition walls 30a and 30b extending in the vertical direction for separating the space into the upstream side and the downstream side are provided. More specifically, a partition wall 30a is provided near the boundary between the developing unit 3 and the rinse unit 4, that is, in the vicinity of the boundary between the second conveyance section M2 and the third conveyance section M3, and the boundary between the rinse section 4 and the drying section 5 That is, the partition wall 30b is provided near the boundary between the eighth transport section M8 and the ninth transport section M9. Openings 31 and 32 through which the conveyance line 2 passes are formed in the respective partition walls 30a and 30b.

この現像ユニット(DEV)1において、各処理部3,4,5内の空間は隔壁30a,30bの開口31,32を介して相互に連通している。現像部3および乾燥部5では、室外の空気を引き込むためのファン33,34と、これらのファン33,34からの空気流を除塵するエアフィルタ35,36とによって、天井から清浄な空気がダウンフローで室内に供給されるようになっている。このうち、現像部3の天井から供給される清浄空気は、現像処理時に発生する現像液のミストを巻き込むようにして前記隔壁30aの開口31を通ってリンス部4の室内に流入する。   In the developing unit (DEV) 1, the spaces in the processing units 3, 4 and 5 communicate with each other through the openings 31 and 32 of the partition walls 30a and 30b. In the developing unit 3 and the drying unit 5, clean air is lowered from the ceiling by the fans 33 and 34 for drawing outdoor air and the air filters 35 and 36 for removing dust from the air flow from the fans 33 and 34. It is designed to be supplied indoors with a flow. Among these, the clean air supplied from the ceiling of the developing unit 3 flows into the chamber of the rinse unit 4 through the opening 31 of the partition wall 30a so as to involve the mist of the developer generated during the developing process.

一方、乾燥部5の天井から供給される清浄空気は、乾燥(液切り)処理で発生するリンス液のミストを巻き込むようにして前記隔壁30bの開口32を通ってリンス部4の室内に流入するようになっている。リンス部4の底部には、たとえば排気ポンプまたは排気ファンを有する排気機構37に通じる排気口38が設けられている。
前記のようにして現像部3側から流入してきたミスト混じりの空気と、乾燥部5側から流入してきたミスト混じりの空気は、リンス部4内で発生するミストをも巻き込んで左右から合流して排気口38から排出されるようなっている。
On the other hand, the clean air supplied from the ceiling of the drying unit 5 flows into the chamber of the rinse unit 4 through the opening 32 of the partition wall 30b so as to involve the mist of the rinse liquid generated in the drying (liquid draining) process. It is like that. An exhaust port 38 communicating with an exhaust mechanism 37 having an exhaust pump or an exhaust fan, for example, is provided at the bottom of the rinse unit 4.
As described above, the mist mixed air flowing in from the developing unit 3 side and the mist mixed air flowing in from the drying unit 5 side also join the mist generated in the rinse unit 4 from the left and right sides. The gas is discharged from the exhaust port 38.

また、基板Gが現像部3からリンス部4へと移動する開口31付近であって、第1の隆起部2aの頂上に形成される水平部Hの終端付近には、基板Gの表面に樹脂材からなる回転ローラを接触し、基板表面を均すための均しローラ66(表面均し手段)が基板幅方向に沿って設けられている。この均しローラ66は、上り傾斜となされた第2の搬送区間M2で現像液の大部分が流れ落ちて薄膜状態で基板G上に残る現像液を、均一に基板後方に押し流して均すために設けられている。この均しローラ66を設けることにより、基板Gがリンス部4に搬入されるときには、基板Gから殆どの現像液を除去することができ、後段のリンス処理の効果をより向上させることができる。また、現像液とリンス液とが混合することを防止して、それに起因する斑の発生を抑制し、分別回収を容易にすることができる。
尚、この均しローラ66は、基板表面を均す目的で設けられるため、表面均し手段としては、それに限らず、下面に向けて液切りするために高圧ガス流を当てるエアナイフを用いてもよいし、或いは樹脂材からなる板部材を基板表面に接触させることにより基板表面を均してもよい。
In addition, there is a resin on the surface of the substrate G in the vicinity of the opening 31 where the substrate G moves from the developing unit 3 to the rinse unit 4 and in the vicinity of the end of the horizontal portion H formed on the top of the first raised portion 2a. A leveling roller 66 (surface leveling means) is provided along the substrate width direction for contacting a rotating roller made of a material and leveling the substrate surface. The leveling roller 66 is used to evenly push the developer remaining on the substrate G in a thin film state in the second conveying section M2 inclined upward so as to uniformly push the developer remaining on the substrate G to the rear. Is provided. By providing the leveling roller 66, when the substrate G is carried into the rinse section 4, most of the developer can be removed from the substrate G, and the effect of the subsequent rinsing process can be further improved. Further, mixing of the developing solution and the rinsing solution can be prevented, the occurrence of spots caused by the mixture can be suppressed, and the separation and collection can be facilitated.
Since the leveling roller 66 is provided for the purpose of leveling the substrate surface, the surface leveling means is not limited to this, and an air knife that applies a high-pressure gas flow to drain the liquid toward the lower surface may be used. Alternatively, the substrate surface may be leveled by bringing a plate member made of a resin material into contact with the substrate surface.

続いて、現像部3及びリンス部4の構成について、さらに詳しく説明する。
図2は、第2の搬送区間M2に用いて好適なコロ搬送路の構成を示す平面図である。この構成例において、搬送ライン2のコロ6には、搬送区間に応じて2種類のコロ6A,6Bが使われている。
詳細には、水平な搬送路である第1の搬送区間M1および下り傾斜路となる第3の搬送区間M3を構成する第1タイプのコロ6Aは、比較的細いシャフト50の数箇所に太径のローラ部51を固着してなり、ローラ部51に基板Gを載せて回転するようになっている。
Next, the configurations of the developing unit 3 and the rinse unit 4 will be described in more detail.
FIG. 2 is a plan view showing a configuration of a roller conveyance path suitable for the second conveyance section M2. In this configuration example, two types of rollers 6 </ b> A and 6 </ b> B are used for the rollers 6 of the transfer line 2 according to the transfer section.
Specifically, the first type roller 6A constituting the first conveyance section M1 that is a horizontal conveyance path and the third conveyance section M3 that is a downward inclined path has a large diameter at several locations on a relatively thin shaft 50. The roller portion 51 is fixed, and the substrate G is placed on the roller portion 51 and rotated.

上り傾斜路を形成可能な第2の搬送区間M2に用いられる第2タイプのコロ6Bは、第1タイプのローラ部51と同径の円柱または円筒状シャフト52を有し、このシャフト52自体に基板Gを載せて回転するようになっている。なお、第2タイプのコロ6Bには、軸方向に適当な間隔を置いてたとえばゴム製のすべり止めリング53を複数装着するのが好ましい。   The second type of roller 6B used in the second conveyance section M2 capable of forming an upward inclined path has a columnar or cylindrical shaft 52 having the same diameter as that of the first type roller portion 51. The substrate G is placed and rotated. In addition, it is preferable to attach a plurality of, for example, a rubber non-slip ring 53 to the second type roller 6B at an appropriate interval in the axial direction.

また、各コロ6(6A,6B)は、両端部を軸受55に回転可能に支持されており、一端部側の軸受55よりも外側の端に取り付けた歯車プーリ56にベルト伝動機構のタイミングベルト57が巻き掛けられている。このタイミングベルト57は電気モータからなる搬送駆動部(図示せず)の回転駆動軸に接続されている。なお、各コロ6の歯車プーリ56およびタイミングベルト57はハウジング30の外に配置されている。   Each roller 6 (6A, 6B) is rotatably supported at both ends by a bearing 55, and a timing belt of a belt transmission mechanism is attached to a gear pulley 56 attached to an end outside the bearing 55 at one end. 57 is wound. The timing belt 57 is connected to a rotation drive shaft of a conveyance drive unit (not shown) made of an electric motor. Note that the gear pulley 56 and the timing belt 57 of each roller 6 are disposed outside the housing 30.

ここで第1の隆起部2aを形成する第2の搬送区間M2、および第3の搬送区間M3の構成について、図3を用いて詳細に説明する。図3は、第1の隆起部2aを形成するために設けられるコロ6の昇降手段を説明するための側面図である。
図3に示すように、上り傾斜路となる第2の搬送区間M2に用いられる第2タイプのコロ6Bは、その軸受55が昇降軸60により支持される。各昇降軸60は、各コロ6Bに対して設けられ、例えばモータ駆動のシリンダからなる昇降駆動部61により昇降可能に設けられており、制御部70(制御手段)の区間M2昇降制御部71により昇降制御がなされる。
Here, the structure of the 2nd conveyance area M2 and the 3rd conveyance area M3 which form the 1st protruding part 2a is demonstrated in detail using FIG. FIG. 3 is a side view for explaining the raising / lowering means of the roller 6 provided to form the first raised portion 2a.
As shown in FIG. 3, the bearing 55 of the second type roller 6 </ b> B used in the second transport section M <b> 2 that is an upward slope is supported by the lifting shaft 60. Each lifting / lowering shaft 60 is provided for each roller 6B, and can be moved up and down by, for example, a lifting / lowering driving unit 61 formed of a motor-driven cylinder. Elevation control is performed.

また、同様に、下り傾斜路となる第3の搬送区間M3に用いられる第1タイプのコロ6Aは、その軸受55が昇降軸62により支持される。各昇降軸62は、各コロ6Aに対して設けられた昇降駆動部63により昇降可能に設けられており、制御部70の区間M3昇降制御部72により昇降制御がなされる。   Similarly, the bearing 55 of the first type roller 6A used in the third transport section M3 serving as a downward slope is supported by the lifting shaft 62. Each lifting / lowering shaft 62 is provided so as to be lifted / lowered by a lifting / lowering drive unit 63 provided for each roller 6 </ b> A, and lift control is performed by a section M <b> 3 lift control unit 72 of the control unit 70.

また、第2の搬送区間の終端付近におけるコロ6の下方には、基板Gが所定位置に差し掛かったことを検出し、制御部70に検出信号を出力する基板検出部65(基板検出手段)が設けられている。この基板検出部65は、例えば、基板通過の際の揺動変位に基づき検出信号を出力する振り子センサ等を用いることができる。
この基板検出部65により基板Gの先端が第2の搬送区間の終端付近(即ち、第3の搬送区間の始端付近)に差し掛かったことが検出されると、区間M2昇降制御部71、区間M3昇降制御部72の制御により昇降駆動部61,63が駆動し、各昇降軸60、62が上昇して搬送区間M2に上り傾斜の搬送路が形成され、搬送区間M3に下り傾斜の搬送路が形成されるようになされている(即ち、第1の隆起部2aが形成される)。
尚、前記制御部70は、各コロ6を回転駆動するためのタイミングベルト57が接続された前記搬送駆動部(図示せず)の駆動制御も行うように構成されている。
A substrate detection unit 65 (substrate detection means) that detects that the substrate G has reached a predetermined position and outputs a detection signal to the control unit 70 below the roller 6 near the end of the second transport section. Is provided. For example, a pendulum sensor that outputs a detection signal based on a rocking displacement at the time of passing through the substrate can be used as the substrate detection unit 65.
When the substrate detection unit 65 detects that the tip of the substrate G has approached the end of the second transport section (that is, the vicinity of the start of the third transport section), the section M2 elevating control unit 71 and the section M3 The elevating drive units 61 and 63 are driven by the control of the elevating control unit 72, and the elevating shafts 60 and 62 are moved up to form an upward inclined conveying path in the conveying section M2, and a downward inclined conveying path is formed in the conveying section M3. It is made to form (that is, the 1st protruding part 2a is formed).
The control unit 70 is also configured to perform drive control of the transport drive unit (not shown) to which a timing belt 57 for rotationally driving each roller 6 is connected.

また、搬送区間M2と搬送区間M3において第1の隆起部2aが形成されたときには、前記したように、その頂上にフラットな水平部Hが形成される。この水平部Hが形成されることにより、リンスノズル13から供給されるリンス液によるリンス処理の直前まで、基板全面に現像液を残し、所定の現像処理を行うことができるようになされている。   Moreover, when the 1st protruding part 2a is formed in the conveyance area M2 and the conveyance area M3, as above-mentioned, the flat horizontal part H is formed in the top. By forming the horizontal portion H, a predetermined developing process can be performed by leaving the developer on the entire surface of the substrate until immediately before the rinsing process with the rinsing liquid supplied from the rinsing nozzle 13.

続いて、この現像ユニット(DEV)1における全体の動作を図4のフローに基づき、図5、図6の状態遷移図を適宜用いて説明する。尚、図5は第1の隆起部2aが形成される際の搬送区間M2、M3のコロ上昇制御状態を示し、図6はそのときの基板G上の現像液Dの状態を示している。
熱的処理部(図示せず)において露光後の一連の熱処理を終えた基板Gは搬送機構(図示せず)によって多段ユニット部(TB)7のパスユニット(PASS)に搬入される。
図1に示すように、このパスユニット(PASS)内には、前記搬送機構から基板Gを受け取るリフトピン昇降機構40が設けられている。このリフトピン昇降機構40により搬送ライン2上に基板Gが水平に移載されると、搬送駆動部の駆動による一定速度(例えば40mm/s)のコロ搬送で基板Gは隣の現像ユニット(DEV)1に向けて搬送される(図4のステップS1)。
Next, the overall operation of the developing unit (DEV) 1 will be described based on the flow of FIG. 4 and using the state transition diagrams of FIGS. 5 and 6 as appropriate. 5 shows the roller ascent control state of the transport sections M2 and M3 when the first raised portion 2a is formed, and FIG. 6 shows the state of the developer D on the substrate G at that time.
The substrate G that has undergone a series of heat treatments after exposure in a thermal processing unit (not shown) is carried into a pass unit (PASS) of the multi-stage unit unit (TB) 7 by a transport mechanism (not shown).
As shown in FIG. 1, a lift pin raising / lowering mechanism 40 for receiving the substrate G from the transport mechanism is provided in the pass unit (PASS). When the substrate G is horizontally transferred onto the transport line 2 by the lift pin lifting mechanism 40, the substrate G is adjacent to the developing unit (DEV) by roller transport at a constant speed (for example, 40 mm / s) by driving the transport driving unit. 1 (step S1 in FIG. 4).

現像ユニット(DEV)1では、最初に現像部3において、基板Gが搬送ライン2の第1の搬送区間M1内を水平姿勢で移動する間に定置の現像ノズル9より現像液Dを供給され、基板G上には基板前端から基板後端に向かって搬送速度と等しい走査速度で現像液Dが盛られる(図4のステップS2、図6(a)の状態)。基板Gからこぼれた現像液Dはパン10に受け集められる。   In the developing unit (DEV) 1, first, in the developing unit 3, the developing solution D is supplied from the stationary developing nozzle 9 while the substrate G moves in a horizontal posture in the first conveying section M 1 of the conveying line 2. On the substrate G, the developer D is deposited from the front end of the substrate toward the rear end of the substrate at a scanning speed equal to the transport speed (step S2 in FIG. 4, state shown in FIG. 6A). The developer D spilled from the substrate G is collected in the pan 10.

前記のようにして現像液Dを盛られた基板Gは、直後に第2の搬送区間M2に搬送される(図4のステップS3)。ここで、第2の搬送区間M2は、図5(a)に示すように、第1の搬送区間M1と同じ高さで水平搬送路をなしている。
第2の搬送区間M2を搬送される基板G(の先端)が、所定の位置、具体的には図5(b)に示すように、リンス部4側の第3の搬送区間M3に差し掛かると(図4のステップS4)、基板検出部65は基板Gを検出し、検出信号を制御部70に出力する。
この検出信号を受け取った制御部70は、基板Gを搬送しているコロ6の駆動を一旦停止し、基板Gは第2の搬送区間M2上で一時的に所定時間静止する(図4のステップS5)。
The substrate G on which the developer D has been deposited as described above is immediately transferred to the second transfer section M2 (step S3 in FIG. 4). Here, as shown in FIG. 5A, the second transport section M2 forms a horizontal transport path at the same height as the first transport section M1.
The substrate G (the front end) transported in the second transport section M2 reaches a predetermined position, specifically, the third transport section M3 on the rinse section 4 side as shown in FIG. 5B. (Step S4 in FIG. 4), the substrate detector 65 detects the substrate G and outputs a detection signal to the controller 70.
The control unit 70 that has received this detection signal temporarily stops driving the rollers 6 that are transporting the substrate G, and the substrate G is temporarily stopped for a predetermined time on the second transport section M2 (step of FIG. 4). S5).

次いで、区間M2昇降制御部71の制御により各昇降駆動部61が駆動し、対応する昇降軸60を上昇制御する。また、同時に、区間M3昇降制御部72の制御により各昇降駆動部63が駆動し、対応する昇降軸62を上昇制御する。
これによりコロ6が上昇し、図5(c)に示すように、山なりの第1の隆起部2aが形成される(図4のストップS6)。
Next, each lift drive unit 61 is driven by the control of the section M2 lift control unit 71, and the corresponding lift shaft 60 is lifted. At the same time, each lift drive unit 63 is driven by the control of the section M3 lift control unit 72, and the corresponding lift shaft 62 is lifted.
As a result, the roller 6 rises, and a mountain-shaped first raised portion 2a is formed as shown in FIG. 5C (stop S6 in FIG. 4).

ここで、第1の隆起部2aの頂上はフラットな水平部Hが形成されているため、現像液の表面張力により重力による流下力が抑制されており、第1の隆起部2aが完全に形成された状態となって初めて、基板上の現像液が下方つまり後方へ重力で移動して基板後端から流れ落ち始める。また、図6(b)に示すように基板先端部分から現像液Dが後方に引き始める。尚、流れ落ちた現像液はパン10に受け集められる。   Here, since the flat horizontal portion H is formed on the top of the first raised portion 2a, the flow force due to gravity is suppressed by the surface tension of the developer, and the first raised portion 2a is completely formed. It is not until the developed state that the developer on the substrate moves downward, that is, rearward by gravity and begins to flow down from the rear end of the substrate. Further, as shown in FIG. 6B, the developer D starts to be drawn backward from the front end portion of the substrate. The developer that has flowed down is collected in the pan 10.

また、第1の隆起部2aが形成されると、直ぐにコロ6の駆動が開始される。ここで、早くにリンス処理に移行するよう、コロ6の回動による搬送速度が上昇制御される(高速となされる)。基板Gは、それまでの搬送速度よりも速い速度(例えば60mm/s)で第3の搬送区間M3に向けて搬送開始される(図4のステップS7)。   Further, as soon as the first raised portion 2a is formed, the driving of the roller 6 is started. Here, the conveyance speed due to the rotation of the roller 6 is controlled to be increased (high speed) so that the rinsing process is quickly performed. The substrate G starts to be transported toward the third transport section M3 at a speed (for example, 60 mm / s) faster than the transport speed up to that time (step S7 in FIG. 4).

リンス部4に向けて、より高速に搬送開始された基板Gは、現像液Dが引き始めた基板先端方向から順に基板終端まで、所定位置に設けられた均しローラ66により均し処理が施される(図4のステップS8)。これにより、均し処理が施された部位においては、基板G上から現像液Dが殆ど残らない状態となされる。
そして、均し処理が施された部位には、直ぐさま、その後段に設けられたリンスノズル13によりリンス液Wが供給される(図6(c)の状態)。
このリンスノズル13による基板G上へのリンス液供給は、基板Gが第3の搬送区間M3の下り傾斜路を下りる時、図5(d)、図5(e)に時系列に示すように継続して行われる(図4のステップS9)。これにより、基板G上の現像液Dはリンス液Wに完全に置き換えられ、現像が停止する。
尚、基板Gの前方へ流れおちた現像液およびリンス液はパン17に受け集められる。
The substrate G started to be conveyed at a higher speed toward the rinsing unit 4 is subjected to a leveling process by a leveling roller 66 provided at a predetermined position in order from the substrate leading end direction where the developing solution D starts to the substrate end. (Step S8 in FIG. 4). As a result, almost no developer D remains on the substrate G at the leveled portion.
And the rinse liquid W is supplied to the site | part where the leveling process was performed immediately by the rinse nozzle 13 provided in the back | latter stage (state of FIG.6 (c)).
The rinse liquid supply onto the substrate G by the rinse nozzle 13 is performed in a time series as shown in FIGS. 5D and 5E when the substrate G descends the down slope of the third transport section M3. This is performed continuously (step S9 in FIG. 4). As a result, the developing solution D on the substrate G is completely replaced by the rinsing solution W, and the development stops.
The developing solution and the rinsing solution that have flowed forward of the substrate G are collected by the pan 17.

このように基板G上の処理液を現像液Dからリンス液Wに置き換える処理においては、現像液とリンス液が殆ど混ざることなく、しかも時間を空けることなく行うことができる。したがって、従来のように現像液Dが流れ落ちて斑上に残った状態で放置される時間が殆ど無く、現像斑の発生を抑制することができる。   In this way, in the process of replacing the processing solution on the substrate G from the developing solution D to the rinsing solution W, the developing solution and the rinsing solution are hardly mixed and can be performed without taking time. Accordingly, there is almost no time for the developer D to flow down and remain on the spots as in the conventional case, and the occurrence of development spots can be suppressed.

前記のようにして現像処理を終えた基板Gは、水平な第4の搬送区間M4を通過し、次の第5の搬送区間M5で第2の隆起部2bの上り傾斜路を上る。この時、基板G上に残っている置換用のリンス液が基板前端側から後方へ重力で移動して基板後端から流れ落ちる。さらに、上方のリンスノズル14より基板G上に一次洗浄用のリンス液が供給され、古いリンス液を追い出しながらこの新たなリンス液も基板後端から流れ落ちる(図4のステップS10)。基板の後方に流れ落ちたリンス液はパン17に受け集められる。こうして、第2の隆起部2bの頂点を越える基板Gは、その上面に一次洗浄用のリンス液が薄い液膜で残っている状態で、第2の隆起部2bの下り傾斜路(第6の搬送区間M6)に差し掛かる。   The substrate G that has been subjected to the development processing as described above passes through the horizontal fourth transport section M4, and goes up the uphill slope of the second raised portion 2b in the next fifth transport section M5. At this time, the rinsing liquid for replacement remaining on the substrate G moves backward from the front end side of the substrate by gravity and flows down from the rear end of the substrate. Further, a rinse liquid for primary cleaning is supplied onto the substrate G from the upper rinse nozzle 14, and this new rinse liquid also flows down from the rear end of the substrate while expelling the old rinse liquid (step S10 in FIG. 4). The rinse liquid that has flowed down to the back of the substrate is collected by the pan 17. Thus, the substrate G that exceeds the apex of the second raised portion 2b is in a state in which the rinse liquid for primary cleaning remains as a thin liquid film on the upper surface of the substrate G. The conveyance section M6) is reached.

次いで、第2の隆起部2bの下り傾斜路(M6)を基板Gが下りる際には、上方のリンスノズル15により基板G上に二次洗浄用の新たなリンス液が供給され、基板G上に薄く残っていた一次洗浄液を前方に追いやりながら新たなリンス液も基板前端から流れ落ちる(図4のステップS11)。基板Gの前方に流れ落ちたリンス液はパン17に受け集められる。   Next, when the substrate G descends the descending ramp (M6) of the second raised portion 2b, a new rinse liquid for secondary cleaning is supplied onto the substrate G by the upper rinse nozzle 15, and the substrate G A new rinse liquid also flows down from the front edge of the substrate while chasing the primary cleaning liquid remaining thinly forward (step S11 in FIG. 4). The rinse liquid that has flowed down in front of the substrate G is collected by the pan 17.

前記のようにしてリンス処理を終えた基板Gは、水平な第7の搬送区間M7を通過し、次の第8の搬送区間M8で上り段差部2cの傾斜路を上る。この時、基板G上に残っている仕上げ用リンス液が基板前端側から後方へ重力で移動して基板後端から流れ落ちる。さらに、上方のリンスノズル16より基板G上に最終洗浄用のリンス液が供給され、古いリンス液を追い出しながらこの新たなリンス液も基板後端から流れ落ちる(図4のステップS12)。基板Gの後方に流れ落ちたリンス液はパン17に受け集められる。そして、基板Gが段差部2cを上り、乾燥部5側つまり第9の搬送区間M6内の上段搬走路に入ると、エアナイフ20が基板Gに対して搬送方向と逆向きに高圧ガス流を当てることにより、基板G上の残っていたリンス液が基板後方へ寄せられて基板後端から追い出される(液切りされる)。基板Gの後方に飛ばされたリンス液はパン17に受け集められる。   The substrate G that has been rinsed as described above passes through the horizontal seventh transport section M7 and goes up the slope of the ascending step 2c in the next eighth transport section M8. At this time, the finishing rinse liquid remaining on the substrate G moves from the substrate front end side to the rear by gravity and flows down from the substrate rear end. Further, the rinse liquid for final cleaning is supplied onto the substrate G from the upper rinse nozzle 16, and this new rinse liquid also flows down from the rear end of the substrate while expelling the old rinse liquid (step S12 in FIG. 4). The rinse liquid that has flowed down behind the substrate G is received and collected by the pan 17. And when the board | substrate G goes up the level | step-difference part 2c and enters the upper stage conveyance path in the drying part 5 side, ie, the 9th conveyance area M6, the air knife 20 makes a high-pressure gas flow with respect to the board | substrate G in a direction opposite to a conveyance direction. By applying, the remaining rinsing liquid on the substrate G is moved toward the rear of the substrate and driven out (removed) from the rear end of the substrate. The rinse liquid blown behind the substrate G is collected by the pan 17.

こうして現像ユニット(DEV)1内で一連の現像処理工程を終えた基板Gは、そのまま搬送ライン2上をまっすぐ移動して下流側隣の脱色プロセス部8で脱色処理を受けてから、多段ユニット部(TB)(図示せず)のパスユニット(PASS)へ送られる(図4のステップS13)。   The substrate G that has completed a series of development processing steps in the development unit (DEV) 1 moves straight on the transport line 2 as it is and undergoes decoloring processing in the decoloring process unit 8 adjacent to the downstream side, and then the multistage unit unit. (TB) is sent to a pass unit (PASS) (not shown) (step S13 in FIG. 4).

以上のように、本発明に係る実施の形態によれば、リンス部搬入前の搬送路を、水平な搬送路から上り傾斜の搬送路とする構成とし、リンス処理の直前に上り傾斜として基板G上から現像液Dを後端に向けて流し落とし、現像液Dが引いた基板先端から順にリンス処理を施す構成となされている。
これにより、基板G上の現像液Dを直ぐさまリンス液Wに置換することができる。即ち、従来のように現像液Dが流れ落ちて斑上に残った状態で放置される時間が殆ど無く、現像斑の発生を抑制することができる。
また、リンス処理前に均しローラ66により基板G上の現像液Dを均す処理を行うことにより、リンス液Wが供給される基板G上の部位から現像液Dを殆ど除去することができ、これにより現像液Dとリンス液Wとが混合することなく、それによる現像斑を抑制し、また、現像液Dとリンス液Wの分別回収を容易にすることができる。
As described above, according to the embodiment of the present invention, the conveyance path before carrying in the rinsing unit is configured to be a conveyance path inclined upward from the horizontal conveyance path, and the substrate G is formed as an upward inclination immediately before the rinsing process. The developer D is poured from the top toward the rear end, and rinse treatment is sequentially performed from the front end of the substrate from which the developer D is drawn.
Thereby, the developing solution D on the substrate G can be immediately replaced with the rinsing solution W. That is, unlike the prior art, there is almost no time for the developer D to flow down and remain on the spots, and the occurrence of development spots can be suppressed.
Further, by performing the process of leveling the developer D on the substrate G by the leveling roller 66 before the rinse process, the developer D can be almost removed from the portion on the substrate G to which the rinse liquid W is supplied. Thus, the developing solution D and the rinsing solution W are not mixed, so that development spots caused by the mixing can be suppressed, and the separated collection of the developing solution D and the rinsing solution W can be facilitated.

尚、前記実施の形態においては、搬送区間M2の上昇制御に合わせて、搬送区間M3も上昇制御され、第1の隆起部2aを形成するようにしたが、搬送区間M2の昇降動作に拘わらず、搬送区間M3を下り搬送路の状態にしておいてもよい。
また、基板Gを搬送区間M2に搬送し、所定位置で搬送停止した後、搬送区間M2を上昇制御し、上り傾斜の搬送路を形成するよう制御したが、基板Gの搬送を停止せずに、搬送しながら搬送区間M2の上昇制御を行い上り傾斜の搬送路を形成するよう制御してもよい。
In the above-described embodiment, the transport section M3 is also controlled to be lifted in accordance with the lift control of the transport section M2, and the first raised portion 2a is formed. The conveyance section M3 may be in the state of the downward conveyance path.
In addition, after the substrate G is transported to the transport section M2 and stopped at a predetermined position, the transport section M2 is controlled to be lifted to form an upwardly inclined transport path, but without stopping the transport of the substrate G. Alternatively, the conveyance section M2 may be lifted while being conveyed so as to form an upwardly inclined conveyance path.

図1は、本発明の基板処理装置を適用可能な現像ユニット(DEV)の全体構成を模式的に示す図である。FIG. 1 is a diagram schematically showing the overall configuration of a developing unit (DEV) to which the substrate processing apparatus of the present invention can be applied. 図2は、第2の搬送区間に用いて好適なコロ搬送路の構成を示す平面図である。FIG. 2 is a plan view showing a configuration of a roller conveyance path suitable for use in the second conveyance section. 図3は、第1の隆起部を形成するために設けられるコロの昇降手段を説明するための側面図である。FIG. 3 is a side view for explaining a roller raising / lowering means provided for forming the first raised portion. 図4は、現像ユニット(DEV)における全体の動作の流れを示すフローである。FIG. 4 is a flowchart showing the flow of the entire operation in the developing unit (DEV). 図5は、第1の隆起部が形成される際の第2、第3の搬送区間のコロ上昇制御状態を示す図である。FIG. 5 is a diagram illustrating a roller raising control state in the second and third transport sections when the first raised portion is formed. 図6は、第1の隆起部が形成され、リンス処理が行われる際の基板上の現像液の状態を示す図である。FIG. 6 is a diagram illustrating a state of the developer on the substrate when the first raised portion is formed and the rinsing process is performed. 図7は、従来の現像ユニットの主要部を模式的に示す図である。FIG. 7 is a diagram schematically showing a main part of a conventional developing unit. 図8は、ハーフトーン露光処理を説明するための図である。FIG. 8 is a diagram for explaining halftone exposure processing. 図9は、従来の現像ユニットにおいて基板上の現像液を流し落とす状態を示す図である。FIG. 9 is a diagram showing a state in which the developer on the substrate is poured off in the conventional developing unit.

符号の説明Explanation of symbols

1 現像ユニット(基板処理装置)
2 搬送ライン
9 現像液供給ノズル(第1の処理液供給部)
13 リンス液供給ノズル(第2の処理液供給部)
60 昇降軸(昇降手段)
61 昇降駆動部(昇降手段)
62 昇降軸(昇降手段)
63 昇降駆動部(昇降手段)
65 基板検出部(基板検出手段)
66 均しローラ(表面均し手段)
70 制御部(制御手段)
G 被処理基板
D 現像液(第1の処理液)
W リンス液(第2の処理液)
1 Development unit (substrate processing equipment)
2 Conveyance line 9 Developer supply nozzle (first processing solution supply unit)
13 Rinse solution supply nozzle (second treatment solution supply unit)
60 Lifting shaft (lifting means)
61 Lifting drive (lifting means)
62 Lifting shaft (lifting means)
63 Lifting drive part (lifting means)
65 Substrate detector (substrate detector)
66 Leveling roller (surface leveling means)
70 Control unit (control means)
G Substrate D D Developer (first treatment liquid)
W rinse liquid (second treatment liquid)

Claims (10)

被処理基板に第1の処理液を供給して所定の液処理を施し、前記第1の処理液を回収して第2の処理液により洗浄する基板処理装置であって、
前記被処理基板を搬送するための搬送体を所定の搬送方向に敷設しており、前記搬送方向において実質的に水平な搬送路を有する第1の搬送区間と、前記第1の搬送区間に続く上り傾斜の搬送路を水平な搬送路から形成可能な第2の搬送区間と、前記第2の搬送区間が上り傾斜の状態で、前記第2の搬送区間に続く下り傾斜の搬送路を形成する第3の搬送区間とを含む平流しの搬送ラインと、
前記搬送ライン上で前記基板を搬送するために前記搬送体を駆動する搬送駆動部と、
前記第1の搬送区間内で前記基板上に第1の処理液を供給する第1の処理液供給部と、
前記第3の搬送区間内で前記基板上に第2の処理液を供給する第2の処理液供給部と、
前記第2の搬送区間に前記被処理基板が載置された状態で、該第2の搬送区間に敷設された搬送体を上昇移動させ、前記第1の搬送区間に続く上り傾斜の搬送路を形成する昇降手段とを備えることを特徴とする基板処理装置。
A substrate processing apparatus that supplies a first processing liquid to a substrate to be processed, performs a predetermined liquid processing, collects the first processing liquid and cleans it with a second processing liquid,
A transport body for transporting the substrate to be processed is laid in a predetermined transport direction, and follows a first transport section having a transport path substantially horizontal in the transport direction, and the first transport section. A second conveying section capable of forming an upward inclined conveying path from a horizontal conveying path, and a downward inclined conveying path following the second conveying section are formed in a state where the second conveying section is inclined upward. A plain flow conveying line including a third conveying section;
A transport driving unit for driving the transport body to transport the substrate on the transport line;
A first processing liquid supply unit for supplying a first processing liquid onto the substrate in the first transfer section;
A second processing liquid supply unit for supplying a second processing liquid onto the substrate in the third transfer section;
In a state where the substrate to be processed is placed in the second transport section, the transport body laid in the second transport section is moved upward, and an upward inclined transport path following the first transport section A substrate processing apparatus comprising: lifting means for forming.
前記搬送ラインにおいて、
前記昇降手段により上り傾斜となされた前記第2の搬送区間と、下り傾斜の前記第3の搬送区間とにより形成される隆起部の頂上には、水平部が形成されることを特徴とする請求項1に記載された基板処理装置。
In the transfer line,
A horizontal portion is formed on the top of the raised portion formed by the second transport section inclined upward by the elevating means and the third transport section inclined downward. Item 2. The substrate processing apparatus according to Item 1.
前記被処理基板上に、前記第1の処理液が供給された後、前記第2の処理液が供給される前に、前記搬送ライン上を搬送される被処理基板に対し、該基板上に残る第1の処理液を均す表面均し手段を備えることを特徴とする請求項1または請求項2に記載された基板処理装置。   After the first processing liquid is supplied onto the substrate to be processed, before the second processing liquid is supplied, the substrate to be processed that is transported on the transport line is placed on the substrate. 3. The substrate processing apparatus according to claim 1, further comprising surface leveling means for leveling the remaining first processing liquid. 前記表面均し手段は、基板幅方向に沿って設けられ、基板表面に接触することにより該基板表面を均すローラ、または、基板表面に所定のガス流を当てることにより該基板表面を均すエアナイフ、または、基板表面に接触することにより該基板表面を均す板部材であることを特徴とする請求項3に記載された基板処理装置。   The surface leveling means is provided along the width direction of the substrate, and a roller for leveling the substrate surface by contacting the substrate surface or leveling the substrate surface by applying a predetermined gas flow to the substrate surface. The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus is an air knife or a plate member that levels the substrate surface by contacting the substrate surface. 前記昇降手段の駆動を制御する制御手段と、
前記第2の搬送区間を搬送される被処理基板が所定位置に達したことを検出し、検出信号を前記制御手段に出力する基板検出手段とを備え、
前記制御手段は、前記基板検出手段から前記検出信号を受け取ると、前記昇降手段を駆動させ、前記第2の搬送区間に、前記第1の搬送区間に続く上り傾斜の搬送路を形成させることを特徴とする請求項1乃至請求項4のいずれかに記載された基板処理装置。
Control means for controlling driving of the elevating means;
A substrate detection unit that detects that the substrate to be processed transported in the second transport section has reached a predetermined position, and outputs a detection signal to the control unit;
When the control means receives the detection signal from the substrate detection means, the control means drives the elevating means to form an upwardly inclined conveyance path following the first conveyance section in the second conveyance section. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is characterized.
前記第3の搬送区間に敷設された搬送体は、前記昇降手段によって上昇移動可能に設けられ、
前記制御手段は、前記基板検出手段から前記検出信号を受け取ると、前記昇降手段を駆動させ、前記第3の搬送区間に、前記第2の搬送区間に続く下り傾斜の搬送路を形成させることを特徴とする請求項5に記載された基板処理装置。
The transport body laid in the third transport section is provided so as to be movable up and down by the lifting means,
When the control means receives the detection signal from the substrate detection means, the control means drives the elevating means to form a downwardly inclined conveyance path following the second conveyance section in the third conveyance section. The substrate processing apparatus according to claim 5, wherein the apparatus is a substrate processing apparatus.
被処理基板に第1の処理液を供給して所定の液処理を施し、前記第1の処理液を回収して第2の処理液により洗浄する基板処理方法であって、
第1の搬送区間を水平姿勢で搬送される被処理基板に対し、前記第1の処理液を供給するステップと、
前記第1の処理液が供給された被処理基板を水平姿勢のまま第2の搬送区間に搬送するステップと、
前記第2の搬送区間を搬送される前記被処理基板が所定の位置に達したことを検出するステップと、
前記検出がなされた後、前記第2の搬送区間に上り傾斜の搬送路を形成するステップと、
前記上り傾斜の第2の搬送区間に続けて形成された下り傾斜の搬送路をなす第3の搬送区間に前記被処理基板を搬送し、前記被処理基板に前記第2の処理液を供給するステップとを実行することを特徴とする基板処理方法。
A substrate processing method of supplying a first processing liquid to a substrate to be processed, performing a predetermined liquid processing, recovering the first processing liquid and cleaning with a second processing liquid,
Supplying the first processing liquid to the substrate to be processed which is transported in a horizontal posture in the first transport section;
Transporting the substrate to be processed supplied with the first processing liquid to the second transport section in a horizontal posture;
Detecting that the substrate to be processed transported in the second transport section has reached a predetermined position;
After the detection is made, forming an upwardly inclined conveying path in the second conveying section;
The substrate to be processed is transported to a third transport section that forms a transport path having a downward slope formed following the second transport section having the upward slope, and the second processing liquid is supplied to the substrate to be processed. And a substrate processing method.
前記第2の搬送区間を搬送される前記被処理基板が所定の位置に達したことの検出がなされた後、前記第2の搬送区間に上り傾斜の搬送路を形成するステップと同時に、前記第3の搬送区間に前記第2の搬送区間に続く下り傾斜の搬送路を形成するステップが実行されることを特徴とする請求項7に記載された基板処理方法。   After detecting that the substrate to be processed transported in the second transport section has reached a predetermined position, simultaneously with the step of forming an upwardly inclined transport path in the second transport section, the first 8. The substrate processing method according to claim 7, wherein a step of forming a downwardly inclined transport path following the second transport section is performed in three transport sections. 前記第2の搬送区間を搬送される前記被処理基板が所定の位置に達したことを検出するステップの後、
被処理基板の搬送を停止するステップを実行し、
前記第2の搬送区間に上り傾斜の搬送路を形成するステップを実行することを特徴とする請求項7または請求項8に記載された基板処理方法。
After the step of detecting that the substrate to be processed transported through the second transport section has reached a predetermined position,
Execute the step of stopping the transfer of the substrate to be processed,
The substrate processing method according to claim 7, wherein a step of forming an upwardly inclined conveyance path in the second conveyance section is executed.
前記第2の搬送区間に上り傾斜の搬送路が形成された後、前記第3の搬送区間に搬送される前記被処理基板の速度が上昇制御されることを特徴とする請求項7乃至請求項9のいずれかに記載された基板処理方法。   The speed of the substrate to be processed transported to the third transport section is controlled to increase after an upwardly inclined transport path is formed in the second transport section. 9. The substrate processing method described in any one of 9 above.
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