TW201003824A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TW201003824A
TW201003824A TW098119087A TW98119087A TW201003824A TW 201003824 A TW201003824 A TW 201003824A TW 098119087 A TW098119087 A TW 098119087A TW 98119087 A TW98119087 A TW 98119087A TW 201003824 A TW201003824 A TW 201003824A
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substrate
transport
section
processed
conveying
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TW098119087A
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TWI389238B (en
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Tetsuya Sada
Tsunemoto Ogata
Atsushi Nagata
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Tokyo Electron Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715Changing the direction of the conveying path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736Loading to or unloading from a conveyor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The substrate processing apparatus provides a horizontal line, a transportation driving part that drives carriers, and a lifting and lowering means. The horizontal transportation line provides the first transportation section that is the horizontal transportation path, the second transportation section that can be changed from the horizontal transportation path into upward-inclined transportation path and the third transportation section formed on downward-inclined transportation path following the second transportation section while the second transportation section is upward-inclined state. The first processing solvent supplying part in the first transportation section supplies the first processing solvent on the substrate. The second processing solvent supplying part in the third transportation section supplies the second processing solvent on the substrate. While the substrate is held on the second transportation section, the lifting and lowering means lifts the carrier constructed in the second transportation section, and forms the upward-inclined transportation path following the first transportation section.

Description

201003824 六、發明說明: 【發明所屬之技術領域】 ^發明係關於在_理基板上供 ,板處理技術,特別是以水平移動方式沿 時對其進行液處理之基板處理裝置及基板處理3輸达基板亚同 【先别技術】 最近,製造LCD (液晶顧;-扣、„士 理系統中,作為可有利對庫L’g用於光阻'塗布顯影處 化之顯與方4職板(例如玻璃基板)之大型 同時進ίϊΐ 有滾子之輸送道上輸送基板並 如此β平移動方式可簡單處置大型方式’ 板之再附著少等優點。 土 有不產生務氣,對基 中顯影液轉狀τ游做置有補㈣之輸达道 斜機構,於顯拳、+ ^有朝輸方向使基板傾斜之基板傾 水Ϊ中顯影液盛裝在水平之基板上並直接以201003824 VI. Description of the invention: [Technical field to which the invention pertains] ^Inventives relate to a substrate processing technique for supplying a substrate on a substrate, particularly a substrate processing apparatus and substrate processing for liquid processing in a horizontally moving manner Up to the same as the substrate [first technology] Recently, the manufacture of LCD (liquid crystal Gu; - buckle, „Science system, as a beneficial to the library L'g for the photoresist 'coating and development of the display and side 4 board Large-scale simultaneous feeding (for example, glass substrate). The substrate is conveyed on the conveying path of the roller and the β-flat moving method can easily handle the large-scale method, such as less re-adhesion of the board. The soil does not generate gas, and the developing medium in the base The rotating τ swims the slanting mechanism with the compensation of (4), and the developer in the tilting substrate of the substrate is tilted in the direction of the transfer, and the developing solution is placed on the horizontal substrate and directly

此方式朝輪运道之下游側輸送基板,於既I 下流的贿陳孩’藉_驗·料盤承接i 又基板傾斜機構一旦以如上述之傾攻 ϋ體之排除並使基板回到水平姿態,其 影)。於此概部,自顯歸(停止顯 接。又,m翁結权魏在謂平盤所承 之方式通過之期間内,介顏 t乾紐邛中以水平移動 安心之基板以排除液體,藉此使基板表面乾掉。 奸 201003824 然而’如上述習知之顯影處理 連串動作相當繁複且無效率,兩^ ,有面,一機構及一 上芦卜甘-欠而使盛破有顯影液之基板在輪逆道 ί::- 質降低,於潤洗處理實行前,以面2 J人擔心顯影處理品 而導致賴錄之產ί 破纽面已自紐之㈣側起乾掉 -種請案之申請人已在專利文獻2中揭示 顯i i4 ) ’可以潤洗液高效率取代基板上之 =液。®1 7巾示意顯示有轉敝獻2 枕崎單元^ ^11 7所示之水平移動輸送道9〇中,於顯影部9 =D由顯影液供給倾92朝以水平姿態輸送之基板g之被^ 顯騎D而盛裝有㈣。接著朝潤洗部 g =峡顯影液D往下流,由潤洗液供給噴嘴94供給純= 冼液W,精此施行潤洗處理。 、’ 、請此潤洗部一93中,基板〇藉由通過傾斜成山形之輪送 板G之前财触高樣糾錄板上之顯影液0 又,在山形之輸魏90上基板前端一旦呈下降狀態、,被 面即因由設於其上方之潤洗液供給喷嘴94所供給之潤洗 受到潤洗清洗。 旳 ,如此,回收基板上之顯影液D後,可不長期虛耗時間而高 率地以潤洗液W取代顯影液D,藉此,實行潤洗處理前被處理面 可不自基板G之前端侧起乾掉而使顯影液D往下流,以 微粒之產生。 々正斑點 【專利文獻1】日本特開2003-7582號公報 【專利文獻2】日本特開2007-5695號公報 5 201003824 【發明内容】 (發明所欲解決之課題) 曰又,近年來,例如於LCD製程中形成Amorph〇us siTPT C # :發薄膜電晶體)時,為縮短曝光步驟,多半採用使 j 光(以下辭献)之方法。 卞巴冊 右/m光’如圖8 (a)所示,係使用在光之透射係數上設 I ::之半色調遮罩15G’對基板G1上之光峨R施崎光處理 者。错由此處理,顯影後如圖8 (b)所示,可得具有不同膜 膜部R1與厚膜部R2)之光阻圖案r。 、 ’ 然而,若藉由專利文獻2所揭示之顯影單元對此經半曝 ,j進行顯影處理,在以半遮罩部曝光而應形成薄膜部幻之 即有產生顯影斑點之虞。 α 亦即,_ 7所示之顯影單元,基板〇之前端部—旦朝潤洗 I古^山形輸送道雜’基板^卩被輸送並’逐漸自前端部朝 方,斜’如圖9⑷所示’基板前端附近之顯影液〇朝後方谅 心土板表面開始露出。此時’複數之圓弧C因排除顯影液之^ 亦而如自基板前端邊垂下般,沿基板寬度方向並列描繪。 又 此圓弧隨基板G在山形之輸送道9〇上上昇而如圖9 (b 不^下方延伸,至藉由潤洗供給喷嘴94供給潤洗液w止, ίΐ端殘留有顯影液D,呈如圖9㈦所示鄰接之圓弧C之切 Li狀悲。在此,此線狀之顯影液殘餘(切線α)若存在於如圖 (b)所示之半曝光部(應形成薄膜部R1之部位)上,即產 =生·^ W洗料止'雜關,於轉分猶進行顯‘ ,於如上述習知技術之問題點,本發明之目的在於提供 ^免理f置及基板處理方法,可高效率且順暢在水平移動之幹 進行區別回收已對被處理基板供給之第1處理液並取代‘ 弟2處理液之動作,以抑制顯影斑點之產生。 勺 (解決課題之手段) 為解決上述課題,依本發明之基板處理裝置對被處理基板供 201003824 給第1處理液以施行既定之液處理,回收該 理 處理液清洗該基板,其特徵在於包含: /並精由弟2 水平㈣輸送線,沿既定之輸送方 理《&之輸送體,且沿該輸送方向包含:商又有用以輪达遠被處 Ϊ 間’具有實質上水平之輪送道; 形成ί升^ii〗道接f於該第1輸送區間,可由水平之輸送道 第3輸送區間,於該第2輸送區間上升傾钭 於該第2輸送區間形成下降傾斜輸送道.升倾之狀悲下’接績 送該基板而驅動該輸送體; 處理L· 知1輸送區間内在該基板上供給第1 處理^ ί理液供給部’於該第3輸送區間内在該基板上供給第2 幵降機構,於s亥苐2輸送區間裁晋古兮、士老m1 上昇移動舖設於該第2輪送區間亥被處,板,態下, 區間形成上升傾斜輸送道。 〜-’以接績於該第1輸送 上升成可;;二2輸送區間即形成 將第1處理液自基板上洗J 升傾斜以朝後端 板前端依序供給第2處理液。 &液机動而露出表面之基 即如^顯::gif代為第2處理液。亦 且在。亥輸送線中,於葬由阳兮曰 與下降傾斜之該第3輸送 重力ίίΪ^ί3部直3 7理液之表面張力,可抑制因 整體以第i處理;施行既定之^弟2處理液前止’皆可對基板 201003824 理液後,供給^第在朝5亥被處理基板上供給該第1處 基板’將殘留在該基板""上之該輸送線上之被處理 ;;刀,=表為珊: 平;或、g由使既定之氣體流衝擊基板表面將該基板表面整 !=二„反表面將該基板表面整平。 上之部位完全機構,可自經供給第2處理液之基板 混合,可^2處理液不 理液與第2處理液。 且可輕易區別回收第1處 且宜包含: 才工制找構,控制該昇降機構之驅動;及 已達ίΪ^Ϊ機5,到輸送於該第2輸送區間之被處理基板 ,{置,即朝该控制機構輸出偵測信號; ㈣控制機構—旦自該基板侧機構純__仲,即 在該第2輸送區間形成接續於該 機槿ίΐϊ舖設於該第3輸送區間之輸送體設置成可藉由該昇降 動,且該控制機構—旦自該基板_機構接$到該偵 筮9°ί、Ρ驅動該昇降機構,以在該帛3輸送區間形成接續於詨 弟2輸送區間下降傾斜之輸送道。 、、、;〜 2 =如此構成,可在正確的時間點制到基板已移動至 輪迗區間之既定位置,可有效進行其後之處理。 供认it ΐ決上述課題,依本發明之基板處理方法·處理基板 處理液以施行既定之液處理,回收1處理液並夢由 弟2處理液清洗該基板,其特徵在於實行下列步驟: 稚田 處理ί以水平姿態輸送於第1輸送區間之被處理基板供給該第1 201003824 被處姿態直接朝第2輸送區間輸送經供給該苐1處理液之 置;偵測到輸送於該第2輸送區狀該被處縣板已達既定之位 第2輸送區間形成上升傾斜輸送道;及 送道之ί。送區t斜輸ί區間而形成之係下降傾斜輸 第2處理液。’ θ 被處理基板’ _被處理基板供給該 既定i位ίί摘?,輸送於該第2輸送區間之該被處理基板已達 驟同時,實ί於ΐΐΐί112 成上升傾斜輸送道之步 送3輸送關接續於該第2輪送印形成顶 處』=之=往:口=㈣代= ==狀之狀_下受到搁置之時間幾乎不存在,可抑制顯影二 定之輸送於該第2輸送區間之該被處理基板已達既 實行停止輸送被處理基板之步驟, ===輸處:,道, 體以第1處理液施行既定之處理。& ’止’皆可對基板整 該第送道後,控制輸送於 藉由如此之控制,可緊接在自基板上去除 月ΐίϊΓ第2處理液,可更確實抑制顯影斑… j本發明可得-種紐處理妓域板處 且順暢在水平移動之輸送線上進行區別 之第t處理獅代為第2處理液之動作,-== 201003824 生。 【實施方式】 以下根據圖式,就依本發明之基板處理裝置及基板處理方法 之實施形態加以說明。本發明之基板處理裝置中係以例如LCD用 玻璃基板為被處理基板(以下稱基板),該基板處理裝置可適用 於進行LCD製程内光微影步驟中之清洗、光阻塗布、前烘烤、顯 影及後供烤等各處理之塗布顯影處理系統一部分構成。 具體而言,其可適用於針對在基板上塗布有光阻,經由遮罩 圖案被施以曝光處理之該基板,施行顯影及潤洗處理之顯影單元 (DEV)。以下參照圖式說明本發明適用於顯影單元(DEV)之 一實施形態。 圖1中示意顯示有此實施形態内顯影單元(DEV)丨之整體構 成。此顯影單元(DEV) 1中如圖示,設置有沿製程線A朝水平 方向(X方向)延伸之水平移動之輸送線2,沿此輸送線2自上游 側依序設有顯影部3、潤洗部4及乾燥部5。 輸送線2上’沿輸送方向(X方向)以一定間隔(例如勘麵 ^隔)舖設有滾子6 (輸送體),用來以該被處理面朝上仰著的姿 態,以既定速度(例如60mm/s)輸送基板G,各滚子6經由齒 機構或皮帶機構等傳動機構連接具有例如電動馬達之輸動 (未經圖示)。 1 此輪送線2並非沿輸送方向(X方向)自起始點起至終 皆於相同之尚度位置延續,而是在途中既定之處具有: 第1隆起部2a,可藉由控制滾子6上昇而隆^形成; 第2隆起部2b,固定配置滾子6 ;及 段差部2c ; 如圖1所示,可對應自輸送方向(χ方向)之一侧觀 輸达道之形狀區分成9個輸送區間]νπ、Μ2、Μ3、 Μ7、Μ8、通。 Κ ίο 201003824 立J上輪送區間M1係自多段單元部7通過單元(PASS)内夕 JJJPO 3In this way, the substrate is transported toward the downstream side of the wheeled carriage, and the bribe is passed down by the I. The borrowing of the tray is followed by the substrate tilting mechanism. Once the tilting body is removed as described above and the substrate is returned to the horizontal posture. , its shadow). In this general section, the self-returning (stopping the display). In addition, during the period in which the M Weng Quanwei was in the way of the flat plate, the medium was moved horizontally to remove the liquid. Thereby, the surface of the substrate is dried. 奸201003824 However, as the above-mentioned conventional development processing series of actions are quite complicated and inefficient, two ^, there are noodles, one mechanism and one on the Lu Bugan - owe to make the developer The substrate is inferior to the ί::- quality, before the implementation of the rinsing treatment, the surface of the 2 J people worried about the development of the processed product and led to the production of Lai Lu. The broken noodles have been dried from the side of the New Zealand (4) - kind of case The applicant has disclosed in Patent Document 2 that it is possible to replace the liquid on the substrate with high efficiency. The ® 1 towel indicates that there is a transfer of the substrate 2 in the horizontal movement path shown in the akisaki unit ^ ^11 7 in the developing portion 9 = D from the developer supply tilt 92 toward the substrate g conveyed in a horizontal posture. ^ Mounted D and filled with (4). Then, the cleaning solution D is moved downward, and the pure liquid solution W is supplied from the rinse liquid supply nozzle 94, and the rinsing treatment is performed. , ', please use this rinsing part 93, the substrate 〇 by the tilting into a mountain-shaped wheel to send the plate G before the financial touch high-level recording board on the developer 0 and in the Yamagata In the lowered state, the surface of the surface is washed by the rinse liquid supply nozzle 94 provided above. In this way, after the developer D on the substrate is recovered, the developer D can be replaced with the lotion W without a long period of time, so that the surface to be treated before the rinsing process can be prevented from the front side of the substrate G. It is dried to cause the developer D to flow downward to generate particles. 々 斑点 斑点 【 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 -7 When the Amorph〇us siTPT C #: thin film transistor is formed in the LCD process, in order to shorten the exposure step, the method of making j light (hereinafter referred to as the vocabulary) is mostly used. As shown in Fig. 8(a), the 右巴册 right/m light is applied to the aperture R on the substrate G1 by using a halftone mask 15G' having a I:: at the transmission coefficient of light. This is treated as a defect, and as shown in Fig. 8(b), a photoresist pattern r having a different film portion R1 and a thick film portion R2) can be obtained. However, if the developing unit disclosed in Patent Document 2 performs the development process by half exposure, j is formed by exposing the film to a half mask portion, and a developing spot is generated. α, that is, the developing unit shown in _7, the front end of the substrate — 旦 润 润 古 古 古 古 古 古 形 古 古 ' ' ' 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 ' ' ' ' ' ' ' ' ' ' ' ' 'The developer near the front end of the substrate is exposed to the surface of the earth plate. At this time, the plurality of circular arcs C are drawn side by side in the width direction of the substrate as if the developer is removed from the front end of the substrate. Further, the circular arc rises with the substrate G on the mountain-shaped conveying path 9 而 and as shown in FIG. 9 (b does not extend downward, until the rinsing liquid is supplied by the rinsing supply nozzle 94, and the developer D remains at the ΐ end. It is shown in Fig. 9 (7) that the arc of the adjacent arc C is cut. Here, the linear developer residue (tangent α) is present in the half exposure portion as shown in Fig. (b) (the film portion should be formed) On the part of R1, that is, the production = raw · ^ W washing material stop 'Miscellaneous, in the turn of the sub-display", in the above-mentioned problems of the prior art, the purpose of the present invention is to provide In the substrate processing method, it is possible to efficiently and smoothly remove the first processing liquid supplied to the substrate to be processed and replace the operation of the second processing liquid in order to suppress the occurrence of development spots. In order to solve the above problems, according to the substrate processing apparatus of the present invention, the first processing liquid is supplied to the substrate to be processed for 201003824 to perform a predetermined liquid treatment, and the processing liquid is recovered to clean the substrate, and the method includes: Brother 2 level (four) conveyor line, along the established transportation principle "& The conveying body, and including in the conveying direction: the quotient is also useful for the wheel to be far away from the ' 具有 ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” The third transport section of the transport path rises in the second transport section and forms a descending inclined transport lane in the second transport section. The tilting of the tilting conveyance is followed by the delivery of the substrate to drive the transport body; In the first transport section, the first processing liquid supply unit is supplied to the substrate in the transport section, and the second pick-up mechanism is supplied to the substrate in the third transport section, and the sigma 2 transport section is cut into the old and the old. The m1 ascending movement is laid in the second round of the interval, and in the plate, the section forms a rising and inclined conveying lane. ~-'the performance is increased by the first conveying; the second and second conveying sections are formed. The first treatment liquid is washed from the substrate by J liter to supply the second treatment liquid to the front end of the rear end plate in sequence. The liquid is moved to expose the surface of the surface, that is, the second treatment liquid is used as the second treatment liquid. In the Hai conveyor line, the third transport gravity ί is buried by the impotence and the downward tilt. ^ί3部直直3 7 The surface tension of the chemistry can suppress the overall treatment with the i-th treatment; the implementation of the established ^2 2 treatment liquid before the end can be applied to the substrate 201003824 after the liquid treatment, the supply is processed at 5 hai The first substrate "on the substrate" is treated on the transfer line on the substrate ""; the knife, = table is: flat; or, g is caused by causing a predetermined gas flow to impinge on the surface of the substrate The surface of the substrate is completely fixed by the surface of the substrate. The surface of the substrate is completely flattened. The upper portion of the substrate can be mixed from the substrate supplied with the second treatment liquid, and the liquid can be treated with the liquid and the second treatment liquid. It is easy to distinguish and recycle the first place and should include: the production system is configured to control the driving of the lifting mechanism; and the machine 5 has been transferred to the substrate to be processed conveyed in the second conveying section, And outputting a detection signal to the control mechanism; (4) the control mechanism is formed from the substrate side mechanism, that is, the second transport section is formed in the second transport section, and the transport body disposed in the third transport section is set to By the lifting and moving, and the control mechanism receives the $ from the substrate The Detector 9° ί, Ρ drives the hoisting mechanism to form a transport path that continues to descend in the transport section of the 詨 2 in the 帛 3 transport section. , , , ;~ 2 = This configuration allows the substrate to be moved to the predetermined position of the rim interval at the correct time, and the subsequent processing can be performed efficiently. According to the substrate processing method of the present invention, the substrate processing liquid is treated to perform a predetermined liquid treatment, and the first processing liquid is recovered, and the substrate is cleaned by the second processing liquid, and the following steps are carried out: Processing the substrate to be processed which is transported in the first transport section in a horizontal posture, and the first 201003824 is placed in the second transport section and supplied to the second processing section; the transport is detected in the second transport zone. The condition of the county plate has reached the established position, and the second conveying section forms a rising inclined conveying path; The delivery zone t is inclined to the ί interval and the system is formed by descending and tilting the second treatment liquid. 'θ The substrate to be processed _ the substrate to be processed is supplied to the predetermined i bit ίί extract? The substrate to be processed conveyed in the second transporting section has reached the same time, and the step of sending the slanting transport path to the third transporting line is continued at the top of the second round of printing to form a top==== The mouth = (four) generation = = = shape of the shape _ under the time of being left behind is almost non-existent, and it is possible to suppress the step of the substrate to be processed which is transported in the second transport section to be both stopped and transported, ==Transport:, the road, the body is treated with the first treatment liquid. & 'stop' can be used to control the substrate after the substrate is conveyed. With such control, the second treatment liquid can be removed immediately from the substrate, and the development plaque can be more reliably suppressed. It is the action of the second treatment liquid, which is the difference between the treatment and the horizontally moving conveyor line, and the treatment is carried out, -== 201003824. [Embodiment] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings. In the substrate processing apparatus of the present invention, for example, a glass substrate for LCD is used as a substrate to be processed (hereinafter referred to as a substrate), and the substrate processing apparatus can be applied to cleaning, photoresist coating, and prebaking in the photolithography step of the LCD process. A part of the coating and developing treatment system for each treatment such as development and post-baking. Specifically, it can be applied to a developing unit (DEV) that performs development and rinsing treatment on a substrate on which a photoresist is applied on a substrate and subjected to exposure processing via a mask pattern. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment in which the present invention is applied to a developing unit (DEV) will be described with reference to the drawings. The overall configuration of the developing unit (DEV) in this embodiment is schematically shown in Fig. 1. As shown in the drawing, the developing unit (DEV) 1 is provided with a horizontally moving transport line 2 extending in the horizontal direction (X direction) along the process line A, along which the developing unit 3 is sequentially provided from the upstream side. The rinse unit 4 and the drying unit 5. On the conveying line 2, a roller 6 (conveying body) is laid at a certain interval (for example, in the X direction) at a certain interval (for example, a surveying surface) for a predetermined speed in a posture in which the processed surface is inclined upward ( For example, 60 mm/s) transports the substrate G, and each of the rollers 6 is connected to a transmission mechanism such as a tooth mechanism or a belt mechanism to have an electric motor (not shown). 1 This round feed line 2 does not continue in the conveying direction (X direction) from the starting point to the end at the same latitude position, but has a predetermined position on the way: The first ridge 2a can be controlled by rolling The sub-segment 6 rises and is formed; the second raised portion 2b is fixedly disposed with the roller 6; and the step portion 2c; as shown in Fig. 1, the shape region of the track can be viewed from one side of the transport direction (χ direction) Divided into 9 transport intervals] νπ, Μ2, Μ3, Μ7, Μ8, and pass. Κ ίο 201003824 Vertical J rounding interval M1 from multi-segment unit 7 through unit (PASS) eve JJJPO 3

置之弟1區間變更點P1止之區間,具有水平彡、M Ρ〇 ^ ^ 影部第1區間變更點P1起到設定於顯 間,具有上升^二、、’, ΐ置之第2區間變更點P2為止之區 隆起^ _上為止而成既定之傾G⑶ 洗部====區間變更㈣起至設定於濁 隆起部2a之頂上既度位置,下降至低於上述第1 成既定之傾^ (^如)之第1底部位置為止而 輸送線2!=頁:丄猎由,袞子6之上昇而隆起時), 第4輸送區㈣)之水平部H之梯形形狀。 水平之輪送道,在之弟4區間變更點P4止,具有 直線延伸。 迹弟1底部位置相同之高度大致沿水平- 設定潤洗部4内上述第4區間變更點p4起至 止,更點朽 =職)之帛㈣部2b珊止喂 設定^述第5區間變更祕起至 止,具有下降傾斜輸送道:之第6區間變更點P6 201003824 μ〜第7輸送區間M7自潤洗部4内上述第6區間變更點P6起至 ,疋=較此恰朝下游側離開既定距離之位置,亦即自出口起稍前 上游巧)之位置之第7區間變更點p7止,具有水平輸送道,在 ,、上,第2底部位置相同之高度大致沿水平一直線延伸。 ^輪送區間M8自上述第7區間變更點p7起至設定於 狀與乾燥部ί之交界附奴第8區間變更點P8止,具有上升傾 ’至局於上述第2底部位置既定量(例如10〜25mm)之 又二c之上段位置止,以既定之傾斜角(例如2〜5。)上升。 及、、占ί I輸送區帛應自上述第8區間變更點P8起經由乾燥部5 段差之/理部止,具林平輸魏,保持上述 上1 又位置兩度於一定並直接沿水平一直線延伸。 置有1影第1輸送區間M1内既定位置,沿輸送方向配 式移動之ί平::::/上方朝在輸送線2上以滾子輸送之方 液)。各喷吐基準濃度之顯影液(第1處理 多數微細軸吐σ之長條或配置成1列之 供給源經,管供給顯影液之g所構成’自未經圖示之顯影液 液。此平盤以承接流至輸魏2下之顯影 用機構I2。料祕液_除管11财顯影液再利 將藉由顯影2經由平盤1〇及液體排除管u 影液加以回收,上盛裝顯影液時溢出而往下流之顯 至基準濃度而主2 :人細收之顯驗,再將經調整 且於潤洗影液供給源。 沿輪送方向配置有丨停如 輸賴間紹内之既定位置, 「潤洗噴嘴」。f13作1概液供給噴嘴(以下略稱 線2之該第1隆起部2a;:钭::里:f給部’自上方朝通過輸送 12 201003824 1 第2之基州峨二^送線2之該 士於,、下耜側旁第6輸送區間撾6内既 1 己置有1條或複數條第3潤洗噴嘴15,自上方朝置甬二輸送方向 弟2隆起Ϊ 2b下降斜面之基板G噴吐光製ϋ月用送線2之 且於出口附近第8輸送關⑽内 /二。 配置有1條或複數條第4濁洗喷 ^輸送方向 f喷嘴所構成,自==^喷嘴9構成相同之長條型 液體。 二固不之^閏洗液供給源經由配管供給调洗液之 此平^承接流到輪送線2下之潤洗液。 =下方 體流自輸送線2之下衝擊又^液體排除或是乾燥用之高堡氣 經圖示),以於乾表面。且亦可設有平盤(未 於下游側旁之消i處:=有=4^體。 自上方朝在輪送線2 /又有1線知射早兀(】-UV) 21, 處理用i線(波長施―' 輪运之方式移動之基板G照射消色 且顯影單元(DEV) 7 3、潤洗部4及乾焊邱 、'一體成形之殼體3〇内收納有顯影部 向延伸之分隔壁30a°、p30bA=j理部間之交界設有沿銘直方 游側與下游侧。更詳細而言,二 界隔為亦上 13 201003824 即第2輸送區間M2與第3輸送區間M3 3〇a ’於潤洗部4與乾燥部5之交界,亦^隔^ 9輸送區間M9之交界附近設有分隔壁 ;^ j j乐 分別形成有輪送線2通過之開口 3卜32。於Q刀& J 3〇a、30b 此顯影單元(DEV) 1中,各處理邮^ j c 隔壁3〇a、3%之開口 31、32 ^,之空間經由分 之空氣流進行除塵之空氣過濾器3卜;、芝采自此荨風扇33、34 ° ^f,1 IIf^p3 影崎而通過該分隔壁二= (液體排除『處二:2::,給之潔淨空氣捲入因乾燥 口 32流人潤洗部彳之室心^^^巧之開 往包含例如排氣栗或排氣風扇之排氣機又有排乱口 %,通 匯流,自排氣口 38排出。 Π座生之霧虱捲入而自左右 於第之開口31附近,形成 設有整平滾輪66 (麵整平鑛)板寬度方向 J觸基板G表面,以將基板表面整平。=之旋轉滾輪 第2輸送區間M2往下气 ,將大邛刀於上升傾斜之 =-車感板後方推|,使其流動而整^之顯影液 自基板G去除顯影液,Μ時,可大致完全 顯影液與職航合,抑制起果。且可防止 其進行區別回收。 、匕之斑2之產生,而輕易地對 為表面整平機構表面整平之目的而設置,故作 於此亦可使用為排除液體使高屋氣體流 201003824 衝擊"P表面之空耆,曰 接觸基5表面將基板表面;平、可稽由樹脂材料所構 成之薄板構件 洗部4之構成。 2見圖,摘巾,輪魏合構成之 種頦滾子6A、6B。 又内對應輪送區間使用有2 斜坡送;;::第輪=:區_及為下降 喷粗 5$第1 類^2 峨子 ® %本身承載基板G並旋轉 52 ’此軸心 隔著宜沿_ 皮Γ動機構之正時皮帶5=二—皮帶之5=!輪56 之齒輪時 轉驅_。又,各= V. A 吋皮朮57配置於殼體30之外。 ^ra1 M2 3 ΓΜ^ίΓ®*3\Γ 2a2 隆起之滾子6之麵構蝴 =_為形成第1 型滾㈣其G 輸f區_之第2類 心:昇Ϊ由控制部7° (控制機構)之區_昇降控 滾子^同二:5用降斜坡之第3輸送區間Μ3之第1類型 由外降轴62所支持。各昇降軸62可藉由相對 15 201003824 於各滾子6A设置之幵降驅動部63昇降,並可與由^ 間MS昇降控制部72控制昇降。 立T错由控制部70之區 且於第2輸送區間M2終止端附近滾子6之 机 债測部65 (基板偵測機構),偵測基板〇已移,二土 1 控制部70輸出偵測信號。此基㈣測部65巾 无1立置’朝 等,根據例如基板通過時之擺動位移輸出偵測俨號。%式感測裔 一旦藉由此基板偵測部65偵測到基板'G之1前 輸达區間之終止端附近(亦即第3輸送區間之起始^^至弟 M2昇_】部71、區_昇降控制部yg’二 幵降驅動部6卜63,各昇降轴60、62上昇而於於、、,二糊動 上升傾斜輸送道,於輸送區間M3形成降斜形成 成第1隆起部2a)。 乂 Μ牛悄斜輸达道(亦即形 τ 麟控制部7。亦可對連接有__,轉各滾子6之 正日该W之該輸送驅動部(未經圖示)進行驅動控制。子之 上述輸送區間Μ3形成第1隆起部2a時,如 '於其頂峰可形成平面之水平部H。藉细 直至猎由自潤洗喷嘴13所供給之潤洗液進行潤洗声 / , 液皆可,於基板全面,以進行既定之顯影處理,㈤、貝影 接著’根據圖4之流程,適當使用圖5 明此顯影單元(DEV) i中整體之動作。又,^ 兄 機構 移载基板〇’即以輪送驅動部之_^由#? ^列之滚子輸送將基板G朝 輻廷之(圖4之步驟S1)。 干几 16 201003824 钤逆绩)中’最初於顯影部3内,在基板⑽ t第輸达區間mi内以水平姿態移動之期間内由固定 t顯f奶9供給顯騎D ’在基板GJl,自基板前 ϊ 11送ί度^目等之掃描速度盛裝顯影液d (圖4之步^ 、 i。β之狀恶)。自基板G所溢出之顯影液D由平盤1〇所承 r 上述,盛裝有顯影液D之基板G緊接在其之後朝第2 干輸: ί步驟S3)。在此,第2輪送^ M2 Γί 至既定f i S 輸送之基板G (之前端)—旦移動 G,朝控制部7^^;= 貞測部65即偵測到基板 滾子^=^^==^錢送基板G之 之步驟S5)。于在弟2輸达£賴2上靜止既定時間(圖4 接著’藉由區間]V[2昇降控制部7〗之 >也丨®^々θ 61,控制對應之昇降軸6〇之上 各幵降驅動部 部乃之控制驅動各昇降 f =由區間M3昇降控制 藉此滾子6上昇 6 ’f嶋之昇_2之上昇。 % (圖4之步驟。圖(C)所示,形成山形之第1隆起部 由f於第1隆起部2a之頂♦开)成有平面之水平部Η if—紅力糾抑ί第/隆藉 3後方移_基板重力朝下方 办液1)自基板丽端部分朝後拓)所不,顯 流之顯影液由平盤1〇所= 方開始机動而使基板露出。又,往下 對轉i滾即馬上開始驅動滾子6。在此, 生之輪送速度進行上昇控制(使其為高逮),俾 201003824 可迅速轉變為濁洗處理。以較至此為止之輸送速度快的速度(例 如6〇mm/s)朝第3輪送區間M3開始輸送基板G(圖4之步驟S7)。 自因顯影液D流動而開始露出表面之基板前端方向起,至基 板終士端止,依序藉由設於既定位置之整平滾輪6 6對開始更高速 被輸送往潤洗部4之基板G施行整平處理(圖4之步驟S8)。藉 此,於經施行整平處理之部位,已呈顯影液D大致不殘留於基板 G上而自其上排除之狀態。 又,於經施行整平處理之部位,馬上藉由設於其後段之潤洗 噴鳴13供給潤洗液w (圖6 (c)之狀態)。 基板G於第3輸送區間M3之下降斜坡下降時,如圖 l5J"l ^ 13 G Λ 由之步驟S9)。藉此,反G上之顯影液D完全 由潤洗液W所取代,顯影停止。 朝基板G前方往下流之顯影液及潤洗液由平盤卩所承接。 户理中G上之處理液自顯影液D取代為潤洗液W之 往洗液大致可不相混’且不虛耗時間。因此, 間幾乎不ϋ ’之可;^流而殘留在斑點狀之狀態下受到擱置之時 ]忒乎不存在可抑制顯影斑點之產生。 於下理之基通過水平之第4輸送區間刚, 殘上升斜坡上升。此時, 而自基板後端往下流。i自重f端侧朝後方移動 級清洗用潤洗液,將舊^先^V4朝基板G上供給初 板後端往下流(圖4之日I此新的潤洗液亦自基 平盤17所承接。如此。; 土板後方往下流之潤洗液由 其上表面初級、音嘴用?^過弟2隆起部处之頂點之基板G以於 第2隆起部2b之下降^夜^薄:液體膜之型態殘留之狀態往 接著,者美;te r户^ (弟6輸迗區間M6)移動。 時,藉由上方:潤洗噴嘴弟之下降斜坡(鳩)上下降 洗液,將較薄地殘留在基板二 18 201003824In the interval of the change point P1 of the division 1 section, there is a horizontal 彡, M Ρ〇 ^ ^ The first section change point P1 of the shadow section is set in the display, and has the second interval of the rise of ^2, ', and the set. The area swells up to the point P2 ^ _ is a predetermined inclination G (3) The washing part ==== section change (4) is set to the top position of the turbid ridge 2a, and falls below the first one. The trapezoidal shape of the horizontal portion H of the fourth transporting zone (four) is transmitted from the first bottom position of the (^), and the transport line 2! = page: when the scorpion 6 rises and rises. The horizontal wheel is sent to the road, and it is changed in the 4th section of the younger division, and it has a straight line extension. The height of the bottom position of the tracker 1 is approximately the same as the level - the setting of the fourth section change point p4 in the rinsing section 4, and the stagnation of the fourth section. The sixth section change point P6 201003824 μ to the seventh transport section M7 from the above-mentioned sixth section change point P6 in the rinsing section 4, the 秘= is closer to the downstream side The position of the predetermined distance, that is, the seventh interval change point p7 from the position immediately before the exit, has a horizontal conveyance path, and the height of the second bottom position is substantially along the horizontal straight line. The rounding interval M8 is from the seventh interval change point p7 to the boundary between the shape and the dry portion ί, the eighth section change point P8, and has a rising inclination to the second bottom position (for example, 10~25mm) The position of the upper part of the c-c is increased by a predetermined inclination angle (for example, 2 to 5.). And, the ίί I transport area 帛 should be from the 8th interval change point P8 through the dry section 5 section of the difference / rational part, with Lin Ping lose Wei, keep the above 1 and position two degrees at a certain and directly along the level A straight line extends. The film is placed at a predetermined position in the first transport section M1, and is moved in the transport direction: ::::/ above the liquid transported by the roller on the transport line 2). Each of the developing liquids having the discharge standard concentration (the first process is a long process of a plurality of fine axis spouts σ or a supply source arranged in one row, and the tube supplies a g of the developing solution to form a developing solution liquid (not shown). The disk is taken up to the developing mechanism I2 under the conveyor 2. The secret liquid _ except the tube 11 developer solution will be recovered by the development 2 through the flat plate 1 and the liquid discharge tube u, and the upper container is loaded and developed. When the liquid overflows and flows down to the baseline concentration, the main 2: the person receives the test, and then adjusts and supplies the image to the source. At the predetermined position, "rinsing nozzle". F13 is a liquid supply nozzle (hereinafter referred to as the first ridge 2a of the line 2; 钭:: 里:f giving part' from the top to the passage 12 201003824 1 2 The Keiji 峨二^送线2 of the syllabus, the lower stern side of the sixth transport section of the squad 6 has one or a plurality of third rinsing nozzles 15, from the top to the second 输送 two transport Directions 2 ridges Ϊ 2b descending slopes of the substrate G venting light ϋ monthly delivery line 2 and near the exit 8th delivery off (10) / 2. There is 1 or A plurality of fourth turbid washing sprays are formed in the conveying direction f nozzles, and the same long strip type liquid is formed from the ==^ nozzles 9. The second solidifying liquid supply source supplies the adjusting liquid through the piping. The running fluid flowing to the conveyor line 2 = the lower body flow from the bottom of the conveyor line 2 and the liquid removal or drying of the high castle gas is shown in the figure), to dry the surface. Flat plate (not in the downstream side of the i: = = = 4 ^ body. From the top towards the wheel line 2 / there is a line of line early detection (] - UV) 21, processing i line (wavelength ― ― 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮 轮The boundary between 30a° and p30bA=j is provided along the side of the Ming and the downstream side. More specifically, the second boundary is also the upper 13 201003824, that is, the second transport section M2 and the third transport section M3 3〇a 'The boundary between the Yurunkwashing section 4 and the drying section 5 is also provided with a partition wall near the junction of the transport section M9; ^jj Le is formed with an opening 3b of the passing line 2, respectively. ; J 3〇a, 30b In the developing unit (DEV) 1, each processing post 3 ja partition 3 〇 a, 3% of the opening 31, 32 ^, the space is filtered by the air flow to remove the air filter 3 ;,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The room of the person's refining department is opened to the exhaust machine including, for example, the exhaust pump or the exhaust fan, and has a draining port %, which is discharged from the exhaust port 38. The smog of the scorpion is entangled and the left and right sides of the opening 31 are formed to form a flattening roller 66 (face flattening) plate width direction J touches the surface of the substrate G to flatten the surface of the substrate. = Rotating roller The second conveying section M2 is down, and the large boring tool is pushed up by the rising inclination = the rear of the car sensation plate, so that the developing solution is removed and the developing solution is removed from the substrate G. The approximation of the developer and the occupational flow are substantially complete. And it can be prevented from being recycled. The generation of the spot 2 is easily set for the purpose of leveling the surface of the surface leveling mechanism, so that it can also be used to remove the liquid to make the high house gas flow 201003824 impact "P surface empty, 曰The surface of the contact base 5 is composed of a surface of the substrate; and a thin plate member washing portion 4 composed of a resin material is flat. 2 See the picture, pick up the towel, and turn the wheel to form the roller rollers 6A, 6B. In the corresponding rounding interval, there are 2 slopes to be sent;;:: first round =: area _ and lowering spray 5$1st type ^2 峨子® % itself carries the substrate G and rotates 52 'this axis is separated It is advisable to follow the timing belt of the _ leather swaying mechanism 5=two-belt 5=! Further, each of the V.A dermatodes 57 is disposed outside the casing 30. ^ra1 M2 3 ΓΜ^ίΓ®*3\Γ 2a2 The surface of the roller 6 of the bulge = _ is the formation of the first type of roll (four) its G-f-zone _ the second type of heart: the lift is controlled by the control section 7° (Control Mechanism) Zone _ Lifting Control Roller ^ Same 2: 5 The first type of transport section 3 of the descending ramp Μ 3 is supported by the outer descending shaft 62. Each of the lifting shafts 62 can be raised and lowered by the lowering driving portion 63 provided in each roller 6A with respect to 15 201003824, and can be controlled to be lifted and lowered by the MS lifting control unit 72. The T-error is detected by the control unit 70 and the machine debt measuring unit 65 (substrate detecting mechanism) of the roller 6 near the end of the second conveying section M2, detecting that the substrate has been moved, and the second soil 1 control unit 70 outputs the detection Measuring signal. The base (four) measuring portion 65 is not placed upright, and the detection nickname is output according to, for example, the swing displacement when the substrate passes. When the % sensing person detects the vicinity of the end end of the pre-transmission section of the substrate 'G1 by the substrate detecting unit 65 (that is, the start of the third transport section ^^ to the younger M2 liter _) 71 , the area _ lifting control unit yg' two-down drive unit 6 63, each of the lifting shafts 60, 62 rises, and the second paste rises the inclined transport path, and forms a downward slant in the transport section M3 to form the first ridge Part 2a). The yak is slanted into the road (that is, the shape τ lin control unit 7. It is also possible to drive the control unit (not shown) by connecting the __ to the connection of the rollers 6 When the first ridge portion 2a is formed in the transport section Μ3, the horizontal portion H of the plane can be formed at the peak thereof. The rinsing sound is supplied by the rinsing liquid supplied from the rinsing nozzle 13 The liquid can be used in the whole substrate to carry out the predetermined development process, (5), Beiying and then, according to the flow of Fig. 4, the overall action of the developing unit (DEV) i is appropriately used in Fig. 5. Further, the mechanism is shifted. The carrier substrate 〇' is conveyed by the roller of the wheel drive unit to the substrate G (step S1 of Fig. 4). Dry number 16 201003824 钤 绩 ) ) In the portion 3, during the period in which the substrate (10) t is moved in the horizontal position, the fixed t-d milk 9 is supplied to the display D' on the substrate GJ1, and the scanning is performed from the front side of the substrate. The speed of the developer d (Fig. 4 step ^, i. β like the evil). The developer D overflowing from the substrate G is held by the flat disk 1b. The substrate G containing the developer D is immediately after the second dry transfer: step S3). Here, the second round sends M2 Γί to the substrate G (previous end) to which the predetermined fi S is transported, and moves to G, toward the control unit 7^^; the detecting unit 65 detects the substrate roller ^=^^ ==^ Step S5) of feeding the substrate G. At the time when the younger brother 2 loses to 2, it is still at a fixed time (Fig. 4, then by 'interval> V[2 lifting control unit 7>> also 丨®^々θ 61, control the corresponding lifting shaft 6〇 Each of the lowering drive sections is controlled to drive each of the lifting and lowering f = by the section M3 lifting control, whereby the roller 6 rises by 6 'f嶋 rises by _2. % (step of Fig. 4, shown in Fig. (C), The first ridge formed in the shape of a mountain is opened by the top of the first ridge 2a, and is formed into a horizontal portion of the plane. — If the red force is suppressed, the third is moved by the rear, and the liquid is moved downward. No, the developer of the infiltrating flow is maneuvered by the flat disk 1 side to expose the substrate. Further, the roller 6 is started immediately after the reverse rotation. Here, the raw wheel speed is controlled to rise (making it high), and 俾 201003824 can be quickly converted to a turbid treatment. The substrate G is transported to the third rounding section M3 at a speed faster than the conveyance speed (for example, 6 mm/s) (step S7 of Fig. 4). From the direction of the front end of the substrate from which the developing solution D flows to the surface of the substrate, to the end of the substrate, the substrate is transported to the substrate of the rinsing portion 4 at a higher speed by the leveling roller 6 6 provided at a predetermined position. G performs leveling processing (step S8 of Fig. 4). By this, in the portion where the leveling treatment is performed, the developing solution D is substantially not left on the substrate G and is removed therefrom. Further, immediately after the leveling treatment is performed, the rinsing liquid w is supplied by the rinsing squirt 13 provided in the subsequent stage (the state of Fig. 6 (c)). When the descending slope of the substrate G in the third transport section M3 is lowered, as shown in Fig. 15C "l ^ 13 G Λ step S9). Thereby, the developer D on the reverse G is completely replaced by the rinse liquid W, and the development is stopped. The developing solution and the rinsing liquid flowing downward toward the front side of the substrate G are received by the flat pan. The treatment liquid on the G in the household treatment is replaced with the developer D to the rinse liquid W, which is substantially incompatible with the washing liquid, and does not consume time. Therefore, there is almost no 间 之 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The base of the lower level passes through the fourth transport zone of the level, and the residual rise ramps up. At this time, it flows downward from the rear end of the substrate. i The self-weighting f-side side moves to the rear to clean the cleaning liquid, and the old ^V4 is supplied to the substrate G to the back end of the initial plate to flow downward (Fig. 4, this new moisturizing liquid also comes from the base plate 17) This is the case. The backing flow of the soil plate is reduced by the base of the upper surface and the mouth of the sound. The base G of the apex of the ridge 2 is lowered by the second ridge 2b. : The state of the residual form of the liquid film is followed by the beauty; the te r household ^ (different 6 M6) moves. At the top, the washing liquid is lowered on the descending slope (鸠) of the nozzle. Will be thinner on the substrate II 18 201003824

• f新的潤洗液亦自基板前端往下流(圖4之步驟S11)。於基板G 前方往下流之潤洗液由平盤17所承接。 如上述結束潤洗處理之基板G通過水平之第7輸送區間Μ?, 於下一第8輸送區間M8在上升段差部2c之斜坡上上升。此時, Ϊ Ϊ ^上之光製用潤洗液因重力自基板前端_後方移動 下流。且自上方之潤洗噴嘴16在基板G上供給最 ^,_洗液沖走並同時此新關洗液亦自基 板自 17^沖走(排除液體)。滅到基 G直接1㈣束—射顯影處理步驟之基板 受:游側旁之消色處理部8内接 (圖4之步驟13)。又早凡口以未經圖示)之通過單元(PASS) 送道之行之實施形態’送入潤洗部前之輸 而絲面露出自顯影仙流動 於如以取代躺絲W。亦即, 間幾乎不存在可;^==狀之狀態下受到摘置之時 敕巫間洗$理前藉由整平滾輪66進行使美;fer 1·号旦 全去除顯影夺 顯影斑點受到抑制:且=” /閏洗液w不混合’因此產生之 了輪易區別回收顯影液D與潤洗液w。 19 201003824 亦可無視輪送區間M2之昇降動作而呈下降輪送道間M3 且雖控制基板G朝輸送區間M2輸送,於既定位晉; 丁止輸送’ 一邊輸迭一邊控制輪详卩戸弓^ 以形成上升傾斜輪送道。 工爾戍&間M2之上昇 【圖式簡單說明】 本鞭紐㈣置之顯· 圖。圖2係顯示用於第2輸送區間適當之滾子輸送道構成之俯視 側視^ _以說明為形成第1隆起部而設置之滾子昇降機構之 過程之流程圖。 昇控制狀態圖。 起杨弟2、苐3輸送區間之滚子上 液之細示形成有f 1 _部,進行潤洗處理時基板上顯影 意顯示f知之顯影料之主要部位圖。 岡係用以况明半色調曝光處理之說明圖。 叫糸顯示習知之顯影單元中洗掉基板上之顯影液之狀態圖 【主要元件符號說明】 A···製程線 C…圓弧 ci...圓弧之切線 D···第1處理液(顯影液) G、G1···基板(被處理基板) 20 201003824• f new rinse solution also flows down from the front end of the substrate (step S11 of Figure 4). The rinse liquid flowing down in front of the substrate G is received by the flat plate 17. The substrate G that has finished the rinsing process as described above passes through the seventh seventh transport interval ,?, and rises on the slope of the rising step portion 2c in the next eighth transport section M8. At this time, the scouring liquid on the Ϊ Ϊ ^ is moved downward from the front end of the substrate by the gravity. And the rinsing nozzle 16 from above is supplied with the most on the substrate G, and the rinsing liquid is washed away and the new rinsing liquid is also washed away from the substrate (excluding the liquid). Destroy to the base G Direct 1 (four) beam-projection processing step substrate Acceptance: The color-eliminating processing unit 8 on the side of the swimming side is inscribed (step 13 in Fig. 4). In addition, the implementation of the PASS pass channel (not shown) is sent to the front of the rinsing department, and the silk surface is exposed to the self-developing scent. That is to say, there is almost no existence between them; in the state of ^==, when it is taken off, the sorrow is washed by the leveling roller 66; the fer 1·dena is completely removed and the development is affected by the development of the spot. Suppression: and = " / 闰 wash liquid w does not mix 'Therefore, the wheel is easy to distinguish between the recovery developer D and the rinsing liquid w. 19 201003824 It is also possible to ignore the lifting action of the transfer section M2 and the descending round of the delivery lane M3 And although the control substrate G is transported to the transport section M2, it is positioned to be positioned; the feed is controlled while the side is controlled, and the wheel is controlled to form a rising tilting wheel. The rise of the M2 between the workers and the workers Brief description of the formula: Fig. 2 shows a plan view of a roller conveyor which is suitable for the second transport section, and shows a roller which is provided to form the first ridge. The flow chart of the process of the lifting mechanism. The control state diagram of the lift. The fineness of the liquid on the roller of the transport section of Yangdi 2, 苐3 is formed with the f 1 _ section, and the development on the substrate during the rinsing process shows that the development of the substrate is known. The main part of the material is shown in the figure.状态 糸 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态 状态(developing solution) G, G1···substrate (substrate to be processed) 20 201003824

Ml〜M9…輸送區間 P0···起始點 P1〜P8…區間變更點 R…光阻膜(光阻圖案)Ml~M9...Transportation interval P0···Starting point P1~P8...Interval change point R...Photoresist film (resist pattern)

Rl··.薄膜部 R2…厚膜部 S1〜S13···步驟 W…第2處理液(潤洗液) 1…顯影單元(基板處理裝置) ^ 2…輸送線 1 2a…第1隆起部 2b…第2隆起部 2c…段差部(上升段差部) 3…顯影部(處理部) 4…潤洗部(處理部) 5…乾燥部(處理部) 6 (6A、6B)…滾子(輸送體) 7…多段單元部 8··.消色處理部 ( 9…第1處理液供給部(顯影液供給喷嘴)(顯影液喷嘴)(顯 影喷嘴) 10、 17…平盤 11、 18…液體排除管 12…顯影液再利用機構 13…第2處理液供給部(第1潤洗液供給喷嘴)(潤洗液供給 喷嘴)(潤洗喷嘴) 14、15、16…潤洗喷嘴 20·..空氣刀 21-"i線照射單元(i-UV) 30…殼體 21 201003824 30a、30b.·.分隔壁 3卜32".開口 33、34…風扇 35、36…空氣過濾器 37…排氣機構 38…排氣口 40…升降銷昇降機構 50…轴心 51…滚輪部 52…轴心 53…防滑環 55…轴承 56…齒輪帶輪 57…正時皮帶 60、 62…昇降軸(昇降機構) 61、 63…昇降驅動部(昇降機構) 65…基板偵測部(基板偵測機構) 66…整平滾輪(表面整平機構) 70…控制部(控制機構) 71···區間M2昇降控制部 72…區間M3昇降控制部 90…輸送道 91···顯影部 92…顯影液供給喷嘴 93···潤洗部 94…潤洗液供給喷嘴 150…半色調遮罩 22Rl··. Thin film portion R2: Thick film portion S1 to S13···Step W...Second processing liquid (flushing liquid) 1...Developing unit (substrate processing apparatus) ^2...Conveying line 1 2a...1st raised portion 2b...2nd raised portion 2c...step portion (rising step portion) 3:developing unit (processing unit) 4...running unit (processing unit) 5...drying unit (processing unit) 6 (6A, 6B)...roller ( Conveyor 7) Multi-stage unit 8··. Decolorization processing unit (9...first processing liquid supply unit (developing solution supply nozzle) (developing solution nozzle) (developing nozzle) 10, 17... flat disc 11, 18... Liquid discharge pipe 12...developer reuse mechanism 13...second process liquid supply unit (first rinse liquid supply nozzle) (fluid supply nozzle) (running nozzle) 14, 15, 16...rinse nozzle 20· .. air knife 21-"i line illumination unit (i-UV) 30...housing 21 201003824 30a, 30b.. partition wall 3 b 32" opening 33, 34...fan 35,36...air filter 37 ...exhaust mechanism 38...exhaust port 40...lift pin lifting mechanism 50...axis 51...roller 52...shaft 53...slip ring 55...bearing 56...gear pulley 57... Time belt 60, 62... Lifting shaft (lifting mechanism) 61, 63... Lifting drive unit (lifting mechanism) 65... Substrate detecting unit (substrate detecting mechanism) 66... Leveling roller (surface leveling mechanism) 70... Control unit (Control Mechanism) 71··· Section M2 Elevation Control Unit 72... Section M3 Elevation Control Unit 90...Conveyor 91···Development Unit 92...Development Solution Supply Nozzle 93···Removal Unit 94...Nursing Liquid Supply Nozzle 150...halftone mask 22

Claims (1)

201003824 . 七、申請專利範圍: 1. 一種基板處理裝置’對被處理基板供給第1處理液以施行既 定之液處理,回收該第1處理液’並藉由第2處理液清洗該基板, 其特徵在於包含: 水平移動輸送線’沿既定之輸送方向舖設有用以輸送該被處 理基板之輸送體,且沿§玄輸送方向包含:第1輪送區間,旦有實 質上水平之輸送道;第2輸送區間,接續於該第1輸送區間,可 由水平之輸送道形成上升傾斜輸送道;與第3輪送區間,於該第2 輸送區間呈上升傾斜之狀態下,接續於該第2輪送區間形成下降 , 傾斜輸送道; f 輸送驅動部,為在該輸送線上輸送該基板而驅動 =i處理液供給部,於該第i輸送區間内將第給 至该基板上; ?Ϊ理液供給部,於該第3輸送區間⑽第2處理液供給 主该暴扳上;及 使舖輸If間載置有該被處理基板之狀態下, 使^於相2輸碰間之輸送體上昇 送區間形成上升傾斜輸送道。 以弟1輸 2. 如申請專利範圍第〗項之基板處理裝置,复 U 在藉由該昇降機構而上升傾钭之嗲笫2 二中忒輪达線中, 第3輸逆F η二亥第2輸运區間與下降傾斜之該 弟^达㈣所軸之隆起部的頂上,形成有 面4^f if請第1或2項之基板處理裝置,其中,包含表 面正干祛構,在朝該被處理基板上妗 已3衣 該第2處理液前,針對輸送於該輸送ϋ之被l 且在供給 在該基板上之第丨處理平。^队線上之被處理基板,將殘留 方向裝置,其中,沿基板寬度 砂,it機構且該表面整平機構為·. 空;巧板表面將該基板表面整平,·或 平,·或乳刀,错由使既定之氣體流衝擊基板表面將該基板表面整 23 201003824 板構件’藉域職板表⑽錄板表面。 請/利細第1或2項之基板處理裝置,其中,包含: 才工制機構,控制该昇降機構之驅動;及 '、 已達機於該第2輸送區間之被處理基板 已違既疋位置’將補齡號輸出至該控制機構; 勤構該基板偵測機構接收軸貞測信號,即驅 動以幵IV機構’以在雜2輸送區間形成接 的上升傾斜之輸送道。城戸儿亥弟1輸达£間 6.如申請專機_ 5奴基板處理裝置, 第3輸送區間之輸送體設置成可藉由·降機構 了旦自ί亥基板偵測機構接收到該偵測域,即驅動該Ϊ 傾斜^輸ϊί知3輸送區間形成接續於該第2輪送區間的下降 〜7;;ί基減财法,雜處理基·給帛1處雜以施行既 實理液並藉由第2處理液清洗該基板, 1處ΐΐΓ水平絲輸送於第1輸送關之被處理基板供給該第 輸送ί^Ϊ鄉1處理液之被處理基板,簡水平姿態朝第2 .偵測到輸送於該第2輸送區間之該被處縣板已達既定之位 置; 於該偵測到後,在該第2輸送區間形成上升傾斜輸送道;及 在構成接續於該上升傾斜之第2輸送區間形成之下降傾 送這的第3輸賴間’輸送該減理基板,對該被處板二 該第2處理液。 土攸仏.,,δ 二^8.如申請專利範圍第7項之基板處理方法,其中,於偵測到在 该第2輸送區間輸送之該被處理基板已達既定之位置後,在該第2 輸送區間形成上升傾斜輸送道之步驟的同時,實行於該第3〜輸送 區間形成接續於該第2輸送區間的下降傾斜輸送道之步驟。刖达 24 201003824 9:如巧專利範圍第7或8項之基板處理方法,其 达於料2輸送區間之該被處理基板已達既定之位置之步驟 實^停止輸送被處理基板之步驟, 並貫行於該第2輪送區間形成上升傾斜輸送道之步驟。 # ^:申睛專利範圍第7或8項之基板處理方法,其中,於該 弟2輸送區間形成上升傾斜輸送道後,對輸送於該第3輸送區間 之該被處理基板的速度進行上昇控制。 八、圖式:201003824. VII. Patent Application Range: 1. A substrate processing apparatus 'sends a first processing liquid to a substrate to be processed to perform a predetermined liquid treatment, recovers the first processing liquid', and cleans the substrate by a second processing liquid. The utility model is characterized in that: the horizontal moving conveying line is arranged to transport a conveying body for conveying the processed substrate along a predetermined conveying direction, and includes: a first round conveying section, and a substantially horizontal conveying lane; (2) The transport section is connected to the first transport section, and the upwardly inclined transport lane can be formed by the horizontal transport lane; and the third transport section is connected to the second transport section in a state of rising and tilting in the second transport section. The section is formed to descend and tilt the transport path; f the transport drive unit drives the substrate on the transport line to drive the =i processing liquid supply unit, and supplies the first to the substrate in the i-th transport section; In the third transport section (10), the second processing liquid is supplied to the main board; and in the state in which the substrate to be processed is placed between the paving areas, the transport body between the phases 2 is raised. The sending section forms a rising inclined conveying lane. In the case of the brothers 1 loses 2. If the substrate processing device of the patent scope 〗 〖, the complex U is raised by the lifting mechanism, the second 逆 F 亥 亥 , On the top of the ridge of the second transport zone and the descending slant (4), the substrate processing device of the first or second item is formed on the top of the ridge of the axis (4), wherein the surface includes a positive dry structure, Before the second processing liquid has been applied to the substrate to be processed, the second processing liquid supplied to the substrate is processed and processed on the substrate. ^The processed substrate on the line, the residual direction device, wherein the sand along the width of the substrate, the mechanism and the surface leveling mechanism are empty; the surface of the board is flattened, or flat, or milk Knife, wrong by causing a given gas flow to impact the surface of the substrate to the surface of the substrate 23 201003824 plate member 'borrowed field board table (10) recorded surface. The substrate processing apparatus of the first or second item of the present invention, comprising: a manufacturing mechanism for controlling the driving of the lifting mechanism; and 'the substrate to be processed in the second conveying section has been violated The position 'outputs the supplemental age number to the control mechanism; the substrate detecting mechanism receives the axis detection signal, that is, drives the 幵IV mechanism' to form a rising inclined slanting lane in the hybrid 2 transport section. Chengxier Haidi 1 lost to £6. If you apply for a special machine _ 5 slave substrate processing device, the transport body of the third transport zone is set to receive the detection by the haihai substrate detection mechanism. Domain, that is, driving the Ϊ tilting ϊ 知 知 知 知 知 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送 输送The substrate is cleaned by the second treatment liquid, and one horizontal wire is conveyed to the substrate to be processed which is transported to the first substrate, and the substrate to be processed is supplied to the substrate to be processed. It is detected that the stagnation plate conveyed in the second conveying section has reached a predetermined position; after the detection, a rising inclined conveying lane is formed in the second conveying section; and the constituting the slanting inclination is formed (2) The lowering of the transport section is formed by the third transporting chamber, which transports the reduced substrate, and the second processing liquid is placed on the substrate. The substrate processing method of claim 7, wherein after detecting that the substrate to be processed conveyed in the second transport interval has reached a predetermined position, The second transport section forms a step of raising the inclined transport path, and the step of forming the descending inclined transport path following the second transport section in the third to transport sections.刖达24 201003824 9: The substrate processing method according to item 7 or 8 of the patent scope, the step of reaching the predetermined position in the substrate 2 in the delivery section of the material 2, the step of stopping the transport of the substrate to be processed, and The step of forming a rising inclined transport path in the second rounding section is performed. #^: The substrate processing method according to the seventh or eighth aspect of the invention, wherein the speed of the substrate to be processed transported in the third transport section is controlled to rise after the rising inclined transport path is formed in the transport section of the second parent. Eight, the pattern:
TW098119087A 2008-06-17 2009-06-08 Substrate processing apparatus and substrate processing method TWI389238B (en)

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