JP2009302409A - 半導体ウェーハの製造方法 - Google Patents

半導体ウェーハの製造方法 Download PDF

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Publication number
JP2009302409A
JP2009302409A JP2008157232A JP2008157232A JP2009302409A JP 2009302409 A JP2009302409 A JP 2009302409A JP 2008157232 A JP2008157232 A JP 2008157232A JP 2008157232 A JP2008157232 A JP 2008157232A JP 2009302409 A JP2009302409 A JP 2009302409A
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JP
Japan
Prior art keywords
semiconductor wafer
grinding
chamfering
polishing
fixed abrasive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008157232A
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English (en)
Japanese (ja)
Other versions
JP2009302409A5 (enExample
Inventor
Tomohiro Hashii
友裕 橋井
Yuichi Kakizono
勇一 柿園
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2008157232A priority Critical patent/JP2009302409A/ja
Priority to US12/475,855 priority patent/US20090311948A1/en
Publication of JP2009302409A publication Critical patent/JP2009302409A/ja
Publication of JP2009302409A5 publication Critical patent/JP2009302409A5/ja
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2008157232A 2008-06-16 2008-06-16 半導体ウェーハの製造方法 Pending JP2009302409A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008157232A JP2009302409A (ja) 2008-06-16 2008-06-16 半導体ウェーハの製造方法
US12/475,855 US20090311948A1 (en) 2008-06-16 2009-06-01 Method for producing semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008157232A JP2009302409A (ja) 2008-06-16 2008-06-16 半導体ウェーハの製造方法

Publications (2)

Publication Number Publication Date
JP2009302409A true JP2009302409A (ja) 2009-12-24
JP2009302409A5 JP2009302409A5 (enExample) 2011-08-04

Family

ID=41415223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008157232A Pending JP2009302409A (ja) 2008-06-16 2008-06-16 半導体ウェーハの製造方法

Country Status (2)

Country Link
US (1) US20090311948A1 (enExample)
JP (1) JP2009302409A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011105255A1 (ja) * 2010-02-26 2011-09-01 株式会社Sumco 半導体ウェーハの製造方法
WO2013027762A1 (ja) * 2011-08-25 2013-02-28 株式会社Sumco 半導体ウェーハの製造方法
WO2018079222A1 (ja) * 2016-10-31 2018-05-03 株式会社Sumco ウェーハの製造方法およびウェーハ

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302338A (ja) * 2008-06-13 2009-12-24 Sumco Corp ウェーハの研磨方法および該方法により製造されるウェーハ
KR101271444B1 (ko) * 2009-06-04 2013-06-05 가부시키가이샤 사무코 고정 연마 입자 가공 장치 및 고정 연마 입자 가공 방법, 그리고 반도체 웨이퍼 제조 방법
DE102011082777A1 (de) * 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
JP6071611B2 (ja) * 2013-02-13 2017-02-01 Ｍｉｐｏｘ株式会社 オリエンテーションフラット等切り欠き部を有する、結晶材料から成るウエハの周縁を、研磨テープを使用して研磨することにより円形ウエハを製造する方法
DE102013204839A1 (de) * 2013-03-19 2014-09-25 Siltronic Ag Verfahren zum Polieren einer Scheibe aus Halbleitermaterial
DE102015220090B4 (de) 2015-01-14 2021-02-18 Siltronic Ag Verfahren zum Abrichten von Poliertüchern
CN106738360B (zh) * 2017-01-19 2018-04-10 中国建筑材料科学研究总院 石英摆片基片及其制备方法
CN111230728B (zh) * 2019-12-18 2021-05-14 昆山益延精密五金有限公司 一种双面研磨装置
CN116460996A (zh) * 2023-03-29 2023-07-21 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 一种对CdZnTe单晶晶片选划装置
CN119017250B (zh) * 2024-10-30 2025-01-24 艾庞半导体科技(四川)有限公司 一种半导体晶圆研磨和抛光设备及研磨工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09248740A (ja) * 1995-07-03 1997-09-22 Mitsubishi Materials Shilicon Corp シリコンウェーハの製造方法およびその装置
JPH10256203A (ja) * 1997-03-11 1998-09-25 Super Silicon Kenkyusho:Kk 鏡面仕上げされた薄板状ウェーハの製造方法
JPH11154655A (ja) * 1997-11-21 1999-06-08 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JP2003197498A (ja) * 2001-09-06 2003-07-11 Wacker Siltronic Ag 被覆されたシリコンウェーハ、その製造方法及び使用

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4112631A (en) * 1973-05-29 1978-09-12 Minnesota Mining And Manufacturing Company Encapsulated abrasive grains and articles made therefrom
JPH081493A (ja) * 1994-06-17 1996-01-09 Shin Etsu Handotai Co Ltd ウェーハ面取部の鏡面研磨方法および鏡面研磨装置
JP3925580B2 (ja) * 1998-03-05 2007-06-06 スピードファム株式会社 ウェーハ加工装置および加工方法
JP3334609B2 (ja) * 1998-05-29 2002-10-15 信越半導体株式会社 薄板縁部の加工方法および加工機
JP2000114216A (ja) * 1998-10-01 2000-04-21 Sumitomo Metal Ind Ltd 半導体ウェーハの製造方法
WO2001082354A1 (en) * 2000-04-24 2001-11-01 Sumitomo Mitsubishi Silicon Corporation Method of manufacturing semiconductor wafer
JP2002124490A (ja) * 2000-08-03 2002-04-26 Sumitomo Metal Ind Ltd 半導体ウェーハの製造方法
JP3510584B2 (ja) * 2000-11-07 2004-03-29 スピードファム株式会社 円板形ワークの外周研磨装置
JP4093793B2 (ja) * 2002-04-30 2008-06-04 信越半導体株式会社 半導体ウエーハの製造方法及びウエーハ
US7141086B2 (en) * 2002-06-03 2006-11-28 Ricoh Company, Ltd. Abrasive grain and method for producing it, polishing tool and method for producing it, grinding wheel and method for producing it, and polishing apparatus
JP3534115B1 (ja) * 2003-04-02 2004-06-07 住友電気工業株式会社 エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法
CN101661910B (zh) * 2003-10-27 2012-07-18 住友电气工业株式会社 氮化镓半导体衬底和蓝色发光器件
JP4273943B2 (ja) * 2003-12-01 2009-06-03 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP2006100799A (ja) * 2004-09-06 2006-04-13 Sumco Corp シリコンウェーハの製造方法
JP4820108B2 (ja) * 2005-04-25 2011-11-24 コマツＮｔｃ株式会社 半導体ウエーハの製造方法およびワークのスライス方法ならびにそれらに用いられるワイヤソー
US8435098B2 (en) * 2006-01-27 2013-05-07 Saint-Gobain Abrasives, Inc. Abrasive article with cured backsize layer
US20080008570A1 (en) * 2006-07-10 2008-01-10 Rogers Theodore W Bridge loadport and method
JP2009302338A (ja) * 2008-06-13 2009-12-24 Sumco Corp ウェーハの研磨方法および該方法により製造されるウェーハ
JP5600867B2 (ja) * 2008-06-16 2014-10-08 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
JP2009302410A (ja) * 2008-06-16 2009-12-24 Sumco Corp 半導体ウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09248740A (ja) * 1995-07-03 1997-09-22 Mitsubishi Materials Shilicon Corp シリコンウェーハの製造方法およびその装置
JPH10256203A (ja) * 1997-03-11 1998-09-25 Super Silicon Kenkyusho:Kk 鏡面仕上げされた薄板状ウェーハの製造方法
JPH11154655A (ja) * 1997-11-21 1999-06-08 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JP2003197498A (ja) * 2001-09-06 2003-07-11 Wacker Siltronic Ag 被覆されたシリコンウェーハ、その製造方法及び使用

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011105255A1 (ja) * 2010-02-26 2011-09-01 株式会社Sumco 半導体ウェーハの製造方法
JPWO2011105255A1 (ja) * 2010-02-26 2013-06-20 株式会社Sumco 半導体ウェーハの製造方法
WO2013027762A1 (ja) * 2011-08-25 2013-02-28 株式会社Sumco 半導体ウェーハの製造方法
JP2013045909A (ja) * 2011-08-25 2013-03-04 Sumco Corp 半導体ウェーハの製造方法
WO2018079222A1 (ja) * 2016-10-31 2018-05-03 株式会社Sumco ウェーハの製造方法およびウェーハ
JP2018074019A (ja) * 2016-10-31 2018-05-10 株式会社Sumco ウェーハの製造方法およびウェーハ

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