JP2009283822A5 - - Google Patents

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Publication number
JP2009283822A5
JP2009283822A5 JP2008136513A JP2008136513A JP2009283822A5 JP 2009283822 A5 JP2009283822 A5 JP 2009283822A5 JP 2008136513 A JP2008136513 A JP 2008136513A JP 2008136513 A JP2008136513 A JP 2008136513A JP 2009283822 A5 JP2009283822 A5 JP 2009283822A5
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JP
Japan
Prior art keywords
layer
contact
inp layer
semi
insulating
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Pending
Application number
JP2008136513A
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English (en)
Japanese (ja)
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JP2009283822A (ja
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Publication date
Application filed filed Critical
Priority to JP2008136513A priority Critical patent/JP2009283822A/ja
Priority claimed from JP2008136513A external-priority patent/JP2009283822A/ja
Priority to US12/198,152 priority patent/US7835413B2/en
Priority to CN2009100027060A priority patent/CN101593930B/zh
Publication of JP2009283822A publication Critical patent/JP2009283822A/ja
Publication of JP2009283822A5 publication Critical patent/JP2009283822A5/ja
Pending legal-status Critical Current

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JP2008136513A 2008-05-26 2008-05-26 半導体レーザ及びその製造方法 Pending JP2009283822A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008136513A JP2009283822A (ja) 2008-05-26 2008-05-26 半導体レーザ及びその製造方法
US12/198,152 US7835413B2 (en) 2008-05-26 2008-08-26 Semiconductor laser
CN2009100027060A CN101593930B (zh) 2008-05-26 2009-01-19 半导体激光器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008136513A JP2009283822A (ja) 2008-05-26 2008-05-26 半導体レーザ及びその製造方法

Publications (2)

Publication Number Publication Date
JP2009283822A JP2009283822A (ja) 2009-12-03
JP2009283822A5 true JP2009283822A5 (https=) 2011-04-14

Family

ID=41342086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008136513A Pending JP2009283822A (ja) 2008-05-26 2008-05-26 半導体レーザ及びその製造方法

Country Status (3)

Country Link
US (1) US7835413B2 (https=)
JP (1) JP2009283822A (https=)
CN (1) CN101593930B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5489702B2 (ja) * 2009-12-24 2014-05-14 三菱電機株式会社 半導体光素子および集積型半導体光素子
CN101888060B (zh) * 2010-06-02 2011-10-19 中国科学院半导体研究所 异质掩埋激光器的制作方法
JP5697907B2 (ja) * 2010-06-25 2015-04-08 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
US9520695B2 (en) * 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
JP6375960B2 (ja) * 2015-01-20 2018-08-22 三菱電機株式会社 光半導体装置
CN107046227B (zh) * 2017-05-16 2019-11-22 厦门市芯诺通讯科技有限公司 一种bcb掩埋高速dfb半导体激光器的制备方法
CN107154580B (zh) * 2017-06-12 2019-06-07 陕西源杰半导体技术有限公司 一种小发散角激光器及其制备工艺
CN110176507B (zh) * 2019-05-31 2020-08-14 厦门市三安集成电路有限公司 一种台面pin的钝化结构和光电二极管及其制备方法
JP7306779B2 (ja) * 2019-09-13 2023-07-11 住友電工デバイス・イノベーション株式会社 光半導体素子およびその製造方法
US12489274B2 (en) * 2020-01-22 2025-12-02 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device
CN115023869B (zh) * 2020-01-28 2025-03-11 三菱电机株式会社 光半导体装置的制造方法
JP7330128B2 (ja) * 2020-04-02 2023-08-21 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
JP7421989B2 (ja) * 2020-04-02 2024-01-25 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices
KR102947061B1 (ko) * 2021-06-17 2026-04-01 미쓰비시덴키 가부시키가이샤 광반도체 소자 및 그 제조 방법
CN118266139A (zh) * 2021-11-30 2024-06-28 三菱电机株式会社 半导体激光器以及半导体激光器制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214662A (en) 1990-11-16 1993-05-25 Furukawa Electric Co., Ltd. Semiconductor optical devices with pn current blocking layers of wide-band gap materials
JPH0548210A (ja) * 1991-08-09 1993-02-26 Mitsubishi Electric Corp 半導体レーザ装置
JP2980435B2 (ja) 1991-09-12 1999-11-22 株式会社東芝 半導体装置
JPH0722691A (ja) * 1993-06-30 1995-01-24 Mitsubishi Electric Corp 半導体レーザとその製造方法
JP2699888B2 (ja) 1994-09-20 1998-01-19 日本電気株式会社 埋め込み型ｐ型基板半導体レーザ
JP3386261B2 (ja) 1994-12-05 2003-03-17 三菱電機株式会社 光半導体装置、及びその製造方法
JP3360962B2 (ja) 1995-03-15 2003-01-07 株式会社東芝 半導体レーザ
JP2776375B2 (ja) 1996-06-20 1998-07-16 日本電気株式会社 半導体レーザ
US6664605B1 (en) * 2000-03-31 2003-12-16 Triquint Technology Holding Co. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
JP2003060311A (ja) * 2001-08-21 2003-02-28 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及びその製造方法
EP1300917A1 (en) * 2001-10-03 2003-04-09 Agilent Technologies, Inc. (a Delaware corporation) Semiconductor device with current confinement structure
US20050141578A1 (en) * 2003-06-20 2005-06-30 Benoit Reid Laser diode structure with blocking layer
JP4792854B2 (ja) 2005-07-25 2011-10-12 三菱電機株式会社 半導体光素子及びその製造方法
JP2008053649A (ja) 2006-08-28 2008-03-06 Mitsubishi Electric Corp 埋め込み型半導体レーザ

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