JP2009269816A5 - - Google Patents

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Publication number
JP2009269816A5
JP2009269816A5 JP2009169526A JP2009169526A JP2009269816A5 JP 2009269816 A5 JP2009269816 A5 JP 2009269816A5 JP 2009169526 A JP2009169526 A JP 2009169526A JP 2009169526 A JP2009169526 A JP 2009169526A JP 2009269816 A5 JP2009269816 A5 JP 2009269816A5
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JP
Japan
Prior art keywords
gas
partial pressure
growth
less
gallium nitride
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JP2009169526A
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English (en)
Japanese (ja)
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JP5105258B2 (ja
JP2009269816A (ja
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Priority to JP2009169526A priority Critical patent/JP5105258B2/ja
Priority claimed from JP2009169526A external-priority patent/JP5105258B2/ja
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Publication of JP2009269816A5 publication Critical patent/JP2009269816A5/ja
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JP2009169526A 2006-03-13 2009-07-17 窒化ガリウム系材料及びその製造方法 Active JP5105258B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009169526A JP5105258B2 (ja) 2006-03-13 2009-07-17 窒化ガリウム系材料及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006067907 2006-03-13
JP2006067907 2006-03-13
JP2009169526A JP5105258B2 (ja) 2006-03-13 2009-07-17 窒化ガリウム系材料及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2008065209A Division JP4395609B2 (ja) 2006-03-13 2008-03-14 窒化ガリウム系材料からなる基板

Publications (3)

Publication Number Publication Date
JP2009269816A JP2009269816A (ja) 2009-11-19
JP2009269816A5 true JP2009269816A5 (fr) 2010-05-13
JP5105258B2 JP5105258B2 (ja) 2012-12-26

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ID=39723732

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008065209A Active JP4395609B2 (ja) 2006-03-13 2008-03-14 窒化ガリウム系材料からなる基板
JP2009169526A Active JP5105258B2 (ja) 2006-03-13 2009-07-17 窒化ガリウム系材料及びその製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2008065209A Active JP4395609B2 (ja) 2006-03-13 2008-03-14 窒化ガリウム系材料からなる基板

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JP (2) JP4395609B2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5534172B2 (ja) * 2009-01-08 2014-06-25 三菱化学株式会社 窒化物結晶の製造方法
JP5665171B2 (ja) * 2010-05-14 2015-02-04 住友電気工業株式会社 Ｉｉｉ族窒化物半導体電子デバイス、ｉｉｉ族窒化物半導体電子デバイスを作製する方法
JP2011256082A (ja) * 2010-06-10 2011-12-22 Sumitomo Electric Ind Ltd ＧａＮ結晶自立基板およびその製造方法
KR101976229B1 (ko) * 2011-10-21 2019-05-07 미쯔비시 케미컬 주식회사 주기표 제 13 족 금속 질화물 반도체 결정의 제조 방법, 및 그 제조 방법에 의해 제조되는 주기표 제 13 족 금속 질화물 반도체 결정
JP6064695B2 (ja) * 2012-03-22 2017-01-25 三菱化学株式会社 窒化ガリウム結晶、及び窒化ガリウム結晶の製造方法
EP2872668B1 (fr) * 2012-07-13 2018-09-19 Gallium Enterprises Pty Ltd Appareil et procédé pour la formation de couche
JP6835019B2 (ja) * 2018-03-14 2021-02-24 株式会社豊田中央研究所 半導体装置及びその製造方法
KR20210041077A (ko) * 2018-08-17 2021-04-14 미쯔비시 케미컬 주식회사 n 형 GaN 결정, GaN 웨이퍼, 그리고, GaN 결정, GaN 웨이퍼 및 질화물 반도체 디바이스의 제조 방법
CN113906169A (zh) * 2019-05-30 2022-01-07 三菱化学株式会社 GaN基板晶片及其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2415707A (en) * 2004-06-30 2006-01-04 Arima Optoelectronic Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm

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