JP2009260306A - 有機エレクトロルミネッセンス素子及びその製造方法並びに有機エレクトロルミネッセンス表示装置 - Google Patents
有機エレクトロルミネッセンス素子及びその製造方法並びに有機エレクトロルミネッセンス表示装置 Download PDFInfo
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- JP2009260306A JP2009260306A JP2009064626A JP2009064626A JP2009260306A JP 2009260306 A JP2009260306 A JP 2009260306A JP 2009064626 A JP2009064626 A JP 2009064626A JP 2009064626 A JP2009064626 A JP 2009064626A JP 2009260306 A JP2009260306 A JP 2009260306A
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- molybdenum oxide
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- amorphous
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Abstract
【解決手段】正孔注入電極である陽極と、陽極に対向するように設けられた電子注入電極である陰極と、陽極と陰極との間に設けられた有機発光層と、を備え、陽極と有機発光層との間に設けられ、結晶とアモルファスとが混合または積層した酸化モリブデン層とを備えることを特徴とする有機エレクトロルミネッセンス素子。
【選択図】図3
Description
本発明の実施の形態に係る有機EL表示装置300に用いる基板(バックプレーン)306は、薄膜トランジスタと有機EL素子100とが設けられている。
図5に示すように、本発明の実施の形態に係る画素電極314は、基板306上の薄膜トランジスタのソース電極313に電気的に接続されて、必要に応じてパターニングで形成される。画素電極314は隔壁315によって区画され、各画素に対応した画素電極314となる。ここで、パッシブマトリクス駆動型の有機EL表示装置の画素電極314は、基板306上に成膜して、必要に応じてパターニングを行うことができる。
本発明の実施の形態に係る隔壁315は、画素に対応した発光領域を区画するように形成することができる。図5に示すように、画素電極314の端部を覆うように形成するのが好ましい。アクティブマトリクス駆動型の有機EL表示装置300は各画素に対して画素電極314が形成され、各画素ができるだけ広い面積を占有しようとする。そのため、画素電極314の端部を覆うように形成される隔壁315の最も好ましい形状は各画素電極314を最短距離で区切る格子状を基本とする。
本発明の実施の形態に係る発光媒体層は、酸化モリブデン層316、インターレイヤ層317及び有機発光層318を備えている。発光媒体層として用いることができる機能層は、酸化モリブデン層316やインターレイヤ層17に限定されるわけではなく、図示しないが正孔輸送層、正孔注入層、電子輸送層、電子注入層などを用いることができる。
図5に示すように、本発明の実施の形態に係る対向電極319を陰極とする場合には有機発光層318への電子注入効率の高い、仕事関数の低い物質を用いることができる。
封止材を設けた際に、封止材と有機EL素子との界面を通って外部から酸素や水分などのガスが侵入するのを防ぐために、絶縁保護層320を成膜する。絶縁保護層320の材料としては例えばLi、Na、K、Rb、Cs、Cu、Mg、Ba、Ca、Sr、Zn、Cd、Al、Ga、In、Sc、Y、Si、Ge、Ti、Zr、Hf、Sb、Nb、Ta、Se、Cr、W、Fe、Co、Yb、Eu、Ce、La、Rb、Lu、Ho、Er、SmまたはTmから選ばれた一種単独または二種以上の原子を含む酸化物、窒化物、酸窒化物、硫化物、炭化物、または弗化物等の無機化合物が挙げられる。さらに有機化合物であるが、絶縁保護層320の構成材料として、カーボンを用いることも好ましい。
有機EL素子に大気のガスが到達しないようにするために通常は、外部と遮断するために封止材と樹脂層とを有する封止体を設けることができる。
画素電極314まで実施例1と同様に作製した。次に、正孔輸送層として、厚さ100nmの酸化モリブデンのアモルファス層316bを基板306の加熱をせず室温の状態でリアクティブスパッタ法とシャドーマスク法とを併用してパターン成膜した。それ以外は実施例1と同様に作製した。
101:基板
102:陽極
103:発光媒体層
103a:正孔注入層
103b:インターレイヤ層
103c:有機発光層
103d:電子注入層
104:酸化モリブデン層
104a:結晶含有層
104b:アモルファス層
105:陰極
200:凸版印刷機
201:被印刷基板
202:インキタンク
203:インキチャンバ
204:アニロックスロール
204a:塗布層
205:版
206:版胴
207:平台
300:有機EL表示装置
306:基板
307:活性層
308:ゲート絶縁膜
309:ゲート電極
310:層間絶縁膜
311:ドレイン電極
312:走査線
313:ソース電極
314:画素電極
315:隔壁
316:酸化モリブデン層
316a:結晶含有層
316b:アモルファス層
317:インターレイヤ層
318:有機発光層
319:対向電極
320:絶縁保護層
Claims (16)
- 正孔注入電極である陽極と、
前記陽極に対向するように設けられた電子注入電極である陰極と、
前記陽極と前記陰極との間に設けられた有機発光層と、を備え、
前記陽極と前記有機発光層との間に設けられ、結晶とアモルファスとが混合または積層した酸化モリブデン層とを備えることを特徴とする有機エレクトロルミネッセンス素子。 - 前記酸化モリブデン層の膜厚が30nm以上150nm以下であることを特徴とする請求項1に記載の有機エレクトロルミネッセンス素子。
- 前記酸化モリブデン層は、前記酸化モリブデンの結晶を含む結晶含有層が、前記陽極と前記酸化モリブデンの結晶を含まないアモルファス層との間に挟持されていることを特徴とする請求項1または2に記載の有機エレクトロルミネッセンス素子。
- 前記結晶含有層の膜厚が2nm以上100nm以下であることを特徴とする請求項1乃至3のいずれかに記載の有機エレクトロルミネッセンス素子。
- 前記アモルファス層の膜厚が5nm以上50nm以下であることを特徴とする請求項1乃至4のいずれかに記載の有機エレクトロルミネッセンス素子。
- 正孔注入電極である陽極を形成し、
前記陽極上に物理気相成長法を用いて、結晶とアモルファスとが混合または積層した酸化モリブデン層を形成し、
前記酸化モリブデン層上に有機発光層を形成し、
前記有機発光層上に電子注入電極である陰極を形成することを特徴とする有機エレクトロルミネッセンス素子の製造方法。 - 前記酸化モリブデン層の膜厚が30nm以上150nm以下であることを特徴とする請求項6に記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記結晶と前記アモルファスとが混合した前記酸化モリブデン層を加熱しながら前記物理気相成長法を用いて成膜することを特徴とする請求項6又は7に記載のエレクトロルミネッセンス素子の製造方法。
- 前記加熱成膜の温度が60℃以上、300℃未満で前記結晶と前記アモルファスとが混合した前記酸化モリブデン層を形成することを特徴とする請求項8に記載のエレクトロルミネッセンス素子の製造方法。
- 前記酸化モリブデン層は、前記酸化モリブデンの結晶を含む結晶含有層が、前記陽極と前記酸化モリブデンの結晶を含まないアモルファス層との間に挟持されていることを特徴とする請求項6又は7に記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記酸化モリブデンの結晶を含む前記結晶含有層が、加熱しながら物理気相成長法を用いて成膜することを特徴とする請求項10に記載のエレクトロルミネッセンス素子の製造方法。
- 前記アモルファス層は、加熱せずに前記物理気相成長法を用いて成膜することを特徴とする請求項10又は11に記載のエレクトロルミネッセンス素子の製造方法。
- 前記結晶含有層の前記加熱成膜の温度が300℃以上であり、前記アモルファス層の成膜温度が60℃未満であることを特徴とする10乃至12のいずれかに記載のエレクトロルミネッセンス素子の製造方法。
- 前記結晶含有層の膜厚が2nm以上100nm以下であることを特徴とする請求項10乃至12のいずれかに記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記アモルファス層の膜厚が5nm以上50nm以下であることを特徴とする請求項10乃至13のいずれかに記載の有機エレクトロルミネッセンス素子の製造方法。
- 請求項1乃至請求項5のいずれかに記載の有機エレクトロルミネッセンス素子を、表示素子として備えたことを特徴とする有機エレクトロルミネッセンス表示装置。
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