JP2009255536A - 液体噴射ヘッドの製造方法 - Google Patents
液体噴射ヘッドの製造方法 Download PDFInfo
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Abstract
【解決手段】第1流路としてのリザーバ部31が形成された第1基板としてのリザーバ形成基板用ウェハ130と、リザーバ形成基板用ウェハ130の一方側に接合され、第2流路としての連通部13が形成された第2基板としての流路形成基板用ウェハ110と、リザーバ部31と連通部13とを区切る分離層としての金属層92と、を備えた基板群を準備する準備工程と、リザーバ形成基板用ウェハ130の流路形成基板用ウェハ110と反対側に、粘着層によって封止膜としてのフィルム1を粘着し、リザーバ部31を封止する封止工程と、封止工程の後に、金属層92を除去する除去工程と、を含み、除去工程では、リザーバ部31の圧力が外部の圧力より低い状態で行う。
【選択図】図7
Description
(実施形態1)
図1は、本発明の実施形態1に係る製造方法によって製造されるインクジェット式記録ヘッドを示す分解斜視図であり、図2は、図1の平面図及び断面図である。図1と図2に図示するように、流路形成基板10は、本実施形態では面方位(110)のシリコン単結晶基板からなり、その一方の面には予め熱酸化によって二酸化シリコンからなる厚さ0.5〜2μmの弾性膜50が形成されている。
図3(a)に示すように、シリコンウェハである流路形成基板用ウェハ110の表面に弾性膜50を構成する二酸化シリコン膜53を形成する。なお、本実施形態では、流路形成基板用ウェハ110として、厚さが約625μmと比較的厚く剛性の高いシリコンウェハを用いている。
まず封止工程の前には、基板群を所定の温度以上に加熱する加熱工程を実施する。加熱工程では、図7(a)に示すように、加熱されている台2に基板群を置く。台2は、流路形成基板用ウェハ110に接する側が平面になっており、所定の温度に設定されている。本実施形態では、後述の第1のウェットエッチング工程で使用する第1のエッチング溶液の温度より高く、かつ、後述の第2のウェットエッチング工程で使用する第2のエッチング溶液の温度より高い60℃に台2の温度を設定する。すると、基板群は台2によって加熱され、リザーバ部31内の温度が上昇する。この設定された温度は、第1のエッチング溶液の温度より高く、かつ、第2のエッチング溶液の温度より高いので、十分な時間が経過すれば、リザーバ部31内の温度も第1のエッチング溶液の温度より高く、かつ、第2のエッチング溶液の温度より高くなる。
除去工程では、第1のウェットエッチング工程と第2のウェットエッチング工程により、金属層92を除去する。第1のウェットエッチング工程として、第1のエッチング溶液を用いて、剥離層16をウェットエッチングにより除去することで、図8(a)に示すように、金属層92上の保護膜15を剥離層16と共に完全に除去する。なお、本実施形態では、前述した工程で露出部152に設けられた配線層190の連通部13側の一部、すなわち、密着層91及び密着層91が拡散した金属層92が除去されているため、配線層190と保護膜15との密着力が弱く、保護膜15を金属層92から容易に剥離することができる。
実施形態2では、封止工程において、基板群の温度を所定の温度から降下させる温度降下工程を含む場合について説明する。準備工程では、実施形態1で説明したように、図6(c)の第1流路としてのリザーバ部31が形成された第1基板としてのリザーバ形成基板用ウェハ130と、リザーバ形成基板用ウェハ130の一方側に接合され、第2流路としての連通部13が形成された第2基板としての流路形成基板用ウェハ110と、リザーバ部31と連通部13とを区切る分離層としての金属層92と、を備えた基板群を準備する。
実施形態1、実施形態2では、封止工程において加熱工程を含む場合について説明したが、実施形態3では、封止工程を除去工程に比べて減圧環境で行う場合について説明する。
上記実施形態では、流路形成基板用ウェハ110に存在する液体流路として連通部13を設けていたが、この連通部13が存在せずに、リザーバ形成基板用ウェハ130のリザーバ部31から流路形成基板用ウェハ110の連通部13以外の他の液体流路に直接液体が流れ込む場合でも、本発明は実施可能である。
Claims (5)
- 第1流路が形成された第1基板と、前記第1基板の一方側に接合され、第2流路が形成された第2基板と、前記第1流路と前記第2流路とを区切る分離層と、を備えた基板群を準備する準備工程と、
前記第1基板の前記第2基板と反対側に、粘着層を用いて封止膜を粘着することによって、前記第1流路を封止する封止工程と、
前記封止工程の後に、前記分離層を除去する除去工程と、を含み、
前記除去工程は、前記第1流路内の圧力が外部の圧力より低い状態で前記分離層を除去することを特徴とする液体噴射ヘッドの製造方法。 - 請求項1に記載の液体噴射ヘッドの製造方法であって、
前記封止工程の前に、前記基板群を所定の温度以上に加熱する加熱工程を含み、前記除去工程は、前記所定の温度以下で前記分離層を除去することを特徴とする液体噴射ヘッドの製造方法。 - 請求項2に記載の液体噴射ヘッドの製造方法であって、
前記封止工程の後に、前記基板群の温度を前記所定の温度から降下させる温度降下工程を含むことを特徴とする液体噴射ヘッドの製造方法。 - 請求項3に記載の液体噴射ヘッドの製造方法であって、
前記温度降下工程では、前記基板群を常温で放置することを特徴とする液体噴射ヘッドの製造方法。 - 請求項1に記載の液体噴射ヘッドの製造方法であって、
前記封止工程は、第1の圧力環境で前記第1流路を封止し、前記除去工程は、前記第1の圧力環境よりも高い圧力である第2の圧力環境で前記分離層を除去することを特徴とする液体噴射ヘッドの製造方法。
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JP5335611B2 (ja) * | 2009-08-18 | 2013-11-06 | キヤノン株式会社 | 液体吐出ヘッド及び液体吐出ヘッドの製造方法 |
US20140187957A1 (en) | 2012-12-31 | 2014-07-03 | Volcano Corporation | Ultrasonic Transducer Electrode Assembly |
JP6060712B2 (ja) * | 2013-02-01 | 2017-01-18 | セイコーエプソン株式会社 | 流路部品、液体噴射ヘッド、液体噴射装置および流路部品の製造方法 |
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