JP2009239014A5 - - Google Patents

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Publication number
JP2009239014A5
JP2009239014A5 JP2008083046A JP2008083046A JP2009239014A5 JP 2009239014 A5 JP2009239014 A5 JP 2009239014A5 JP 2008083046 A JP2008083046 A JP 2008083046A JP 2008083046 A JP2008083046 A JP 2008083046A JP 2009239014 A5 JP2009239014 A5 JP 2009239014A5
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JP
Japan
Prior art keywords
substrate
electrode
facing
processing apparatus
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008083046A
Other languages
English (en)
Japanese (ja)
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JP2009239014A (ja
JP5348919B2 (ja
Filing date
Publication date
Priority claimed from JP2008083046A external-priority patent/JP5348919B2/ja
Priority to JP2008083046A priority Critical patent/JP5348919B2/ja
Application filed filed Critical
Priority to US12/407,109 priority patent/US20090242133A1/en
Priority to CN2009101294603A priority patent/CN101546700B/zh
Priority to TW098109962A priority patent/TWI475610B/zh
Publication of JP2009239014A publication Critical patent/JP2009239014A/ja
Publication of JP2009239014A5 publication Critical patent/JP2009239014A5/ja
Priority to KR1020110109965A priority patent/KR20110131157A/ko
Publication of JP5348919B2 publication Critical patent/JP5348919B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008083046A 2008-03-27 2008-03-27 電極構造及び基板処理装置 Active JP5348919B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008083046A JP5348919B2 (ja) 2008-03-27 2008-03-27 電極構造及び基板処理装置
US12/407,109 US20090242133A1 (en) 2008-03-27 2009-03-19 Electrode structure and substrate processing apparatus
CN2009101294603A CN101546700B (zh) 2008-03-27 2009-03-20 电极构造和基板处理装置
TW098109962A TWI475610B (zh) 2008-03-27 2009-03-26 Electrode construction and substrate processing device
KR1020110109965A KR20110131157A (ko) 2008-03-27 2011-10-26 기판 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008083046A JP5348919B2 (ja) 2008-03-27 2008-03-27 電極構造及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2009239014A JP2009239014A (ja) 2009-10-15
JP2009239014A5 true JP2009239014A5 (enrdf_load_stackoverflow) 2011-05-06
JP5348919B2 JP5348919B2 (ja) 2013-11-20

Family

ID=41115344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008083046A Active JP5348919B2 (ja) 2008-03-27 2008-03-27 電極構造及び基板処理装置

Country Status (5)

Country Link
US (1) US20090242133A1 (enrdf_load_stackoverflow)
JP (1) JP5348919B2 (enrdf_load_stackoverflow)
KR (1) KR20110131157A (enrdf_load_stackoverflow)
CN (1) CN101546700B (enrdf_load_stackoverflow)
TW (1) TWI475610B (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
CN101740298B (zh) * 2008-11-07 2012-07-25 东京毅力科创株式会社 等离子体处理装置及其构成部件
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
US9543123B2 (en) 2011-03-31 2017-01-10 Tokyo Electronics Limited Plasma processing apparatus and plasma generation antenna
JP2015053384A (ja) * 2013-09-06 2015-03-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6339866B2 (ja) * 2014-06-05 2018-06-06 東京エレクトロン株式会社 プラズマ処理装置およびクリーニング方法
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
KR101938306B1 (ko) * 2016-04-18 2019-01-14 최상준 건식 에칭장치의 제어방법
US10242845B2 (en) * 2017-01-17 2019-03-26 Lam Research Corporation Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber
KR102568084B1 (ko) * 2020-06-02 2023-08-21 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7489896B2 (ja) 2020-10-22 2024-05-24 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472565A (en) * 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
TW299559B (enrdf_load_stackoverflow) * 1994-04-20 1997-03-01 Tokyo Electron Co Ltd
JP3814176B2 (ja) * 2001-10-02 2006-08-23 キヤノンアネルバ株式会社 プラズマ処理装置
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
JP4672456B2 (ja) * 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
JP4704088B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置
US7993489B2 (en) * 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
US8789493B2 (en) * 2006-02-13 2014-07-29 Lam Research Corporation Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
US7829469B2 (en) * 2006-12-11 2010-11-09 Tokyo Electron Limited Method and system for uniformity control in ballistic electron beam enhanced plasma processing system
JP5231038B2 (ja) * 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
JP2009239012A (ja) * 2008-03-27 2009-10-15 Tokyo Electron Ltd プラズマ処理装置及びプラズマエッチング方法

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