TWI475610B - Electrode construction and substrate processing device - Google Patents
Electrode construction and substrate processing device Download PDFInfo
- Publication number
- TWI475610B TWI475610B TW098109962A TW98109962A TWI475610B TW I475610 B TWI475610 B TW I475610B TW 098109962 A TW098109962 A TW 098109962A TW 98109962 A TW98109962 A TW 98109962A TW I475610 B TWI475610 B TW I475610B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- electrode
- wafer
- peripheral portion
- processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 106
- 239000000758 substrate Substances 0.000 title claims description 75
- 238000010276 construction Methods 0.000 title 1
- 230000002093 peripheral effect Effects 0.000 claims description 50
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 75
- 239000007789 gas Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 17
- 238000001020 plasma etching Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 150000001768 cations Chemical class 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 239000003507 refrigerant Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008083046A JP5348919B2 (ja) | 2008-03-27 | 2008-03-27 | 電極構造及び基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201001530A TW201001530A (en) | 2010-01-01 |
| TWI475610B true TWI475610B (zh) | 2015-03-01 |
Family
ID=41115344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098109962A TWI475610B (zh) | 2008-03-27 | 2009-03-26 | Electrode construction and substrate processing device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20090242133A1 (enrdf_load_stackoverflow) |
| JP (1) | JP5348919B2 (enrdf_load_stackoverflow) |
| KR (1) | KR20110131157A (enrdf_load_stackoverflow) |
| CN (1) | CN101546700B (enrdf_load_stackoverflow) |
| TW (1) | TWI475610B (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5102706B2 (ja) * | 2008-06-23 | 2012-12-19 | 東京エレクトロン株式会社 | バッフル板及び基板処理装置 |
| CN101740298B (zh) * | 2008-11-07 | 2012-07-25 | 东京毅力科创株式会社 | 等离子体处理装置及其构成部件 |
| US20110206833A1 (en) * | 2010-02-22 | 2011-08-25 | Lam Research Corporation | Extension electrode of plasma bevel etching apparatus and method of manufacture thereof |
| US9543123B2 (en) | 2011-03-31 | 2017-01-10 | Tokyo Electronics Limited | Plasma processing apparatus and plasma generation antenna |
| JP2015053384A (ja) * | 2013-09-06 | 2015-03-19 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP6339866B2 (ja) * | 2014-06-05 | 2018-06-06 | 東京エレクトロン株式会社 | プラズマ処理装置およびクリーニング方法 |
| US20160289827A1 (en) * | 2015-03-31 | 2016-10-06 | Lam Research Corporation | Plasma processing systems and structures having sloped confinement rings |
| KR101938306B1 (ko) * | 2016-04-18 | 2019-01-14 | 최상준 | 건식 에칭장치의 제어방법 |
| US10242845B2 (en) * | 2017-01-17 | 2019-03-26 | Lam Research Corporation | Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber |
| KR102568084B1 (ko) * | 2020-06-02 | 2023-08-21 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| JP7489896B2 (ja) | 2020-10-22 | 2024-05-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060037701A1 (en) * | 2004-06-21 | 2006-02-23 | Tokyo Electron Limited | Plasma processing apparatus and method |
| US20060219363A1 (en) * | 2005-03-31 | 2006-10-05 | Naoki Matsumoto | Capacitive coupling plasma processing apparatus and method for using the same |
| US20070187038A1 (en) * | 2006-02-13 | 2007-08-16 | Daxing Ren | Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472565A (en) * | 1993-11-17 | 1995-12-05 | Lam Research Corporation | Topology induced plasma enhancement for etched uniformity improvement |
| TW299559B (enrdf_load_stackoverflow) * | 1994-04-20 | 1997-03-01 | Tokyo Electron Co Ltd | |
| JP3814176B2 (ja) * | 2001-10-02 | 2006-08-23 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
| US7988816B2 (en) * | 2004-06-21 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP4672456B2 (ja) * | 2004-06-21 | 2011-04-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4704088B2 (ja) * | 2005-03-31 | 2011-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7829469B2 (en) * | 2006-12-11 | 2010-11-09 | Tokyo Electron Limited | Method and system for uniformity control in ballistic electron beam enhanced plasma processing system |
| JP5231038B2 (ja) * | 2008-02-18 | 2013-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体 |
| JP2009239012A (ja) * | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマエッチング方法 |
-
2008
- 2008-03-27 JP JP2008083046A patent/JP5348919B2/ja active Active
-
2009
- 2009-03-19 US US12/407,109 patent/US20090242133A1/en not_active Abandoned
- 2009-03-20 CN CN2009101294603A patent/CN101546700B/zh active Active
- 2009-03-26 TW TW098109962A patent/TWI475610B/zh active
-
2011
- 2011-10-26 KR KR1020110109965A patent/KR20110131157A/ko not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060037701A1 (en) * | 2004-06-21 | 2006-02-23 | Tokyo Electron Limited | Plasma processing apparatus and method |
| US20060219363A1 (en) * | 2005-03-31 | 2006-10-05 | Naoki Matsumoto | Capacitive coupling plasma processing apparatus and method for using the same |
| US20070187038A1 (en) * | 2006-02-13 | 2007-08-16 | Daxing Ren | Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201001530A (en) | 2010-01-01 |
| JP2009239014A (ja) | 2009-10-15 |
| US20090242133A1 (en) | 2009-10-01 |
| JP5348919B2 (ja) | 2013-11-20 |
| CN101546700A (zh) | 2009-09-30 |
| CN101546700B (zh) | 2011-04-13 |
| KR20110131157A (ko) | 2011-12-06 |
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