JP5348919B2 - 電極構造及び基板処理装置 - Google Patents

電極構造及び基板処理装置 Download PDF

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Publication number
JP5348919B2
JP5348919B2 JP2008083046A JP2008083046A JP5348919B2 JP 5348919 B2 JP5348919 B2 JP 5348919B2 JP 2008083046 A JP2008083046 A JP 2008083046A JP 2008083046 A JP2008083046 A JP 2008083046A JP 5348919 B2 JP5348919 B2 JP 5348919B2
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Japan
Prior art keywords
substrate
electrode
wafer
processing
outer electrode
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JP2008083046A
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English (en)
Japanese (ja)
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JP2009239014A (ja
JP2009239014A5 (enrdf_load_stackoverflow
Inventor
博之 中山
昌伸 本田
健二 増澤
学 岩田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2008083046A priority Critical patent/JP5348919B2/ja
Priority to US12/407,109 priority patent/US20090242133A1/en
Priority to CN2009101294603A priority patent/CN101546700B/zh
Priority to TW098109962A priority patent/TWI475610B/zh
Publication of JP2009239014A publication Critical patent/JP2009239014A/ja
Publication of JP2009239014A5 publication Critical patent/JP2009239014A5/ja
Priority to KR1020110109965A priority patent/KR20110131157A/ko
Application granted granted Critical
Publication of JP5348919B2 publication Critical patent/JP5348919B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008083046A 2008-03-27 2008-03-27 電極構造及び基板処理装置 Active JP5348919B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008083046A JP5348919B2 (ja) 2008-03-27 2008-03-27 電極構造及び基板処理装置
US12/407,109 US20090242133A1 (en) 2008-03-27 2009-03-19 Electrode structure and substrate processing apparatus
CN2009101294603A CN101546700B (zh) 2008-03-27 2009-03-20 电极构造和基板处理装置
TW098109962A TWI475610B (zh) 2008-03-27 2009-03-26 Electrode construction and substrate processing device
KR1020110109965A KR20110131157A (ko) 2008-03-27 2011-10-26 기판 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008083046A JP5348919B2 (ja) 2008-03-27 2008-03-27 電極構造及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2009239014A JP2009239014A (ja) 2009-10-15
JP2009239014A5 JP2009239014A5 (enrdf_load_stackoverflow) 2011-05-06
JP5348919B2 true JP5348919B2 (ja) 2013-11-20

Family

ID=41115344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008083046A Active JP5348919B2 (ja) 2008-03-27 2008-03-27 電極構造及び基板処理装置

Country Status (5)

Country Link
US (1) US20090242133A1 (enrdf_load_stackoverflow)
JP (1) JP5348919B2 (enrdf_load_stackoverflow)
KR (1) KR20110131157A (enrdf_load_stackoverflow)
CN (1) CN101546700B (enrdf_load_stackoverflow)
TW (1) TWI475610B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017183880A1 (ko) * 2016-04-18 2017-10-26 최상준 건식 에칭장치의 제어방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
CN101740298B (zh) * 2008-11-07 2012-07-25 东京毅力科创株式会社 等离子体处理装置及其构成部件
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
US9543123B2 (en) 2011-03-31 2017-01-10 Tokyo Electronics Limited Plasma processing apparatus and plasma generation antenna
JP2015053384A (ja) * 2013-09-06 2015-03-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6339866B2 (ja) * 2014-06-05 2018-06-06 東京エレクトロン株式会社 プラズマ処理装置およびクリーニング方法
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
US10242845B2 (en) * 2017-01-17 2019-03-26 Lam Research Corporation Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber
KR102568084B1 (ko) * 2020-06-02 2023-08-21 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7489896B2 (ja) 2020-10-22 2024-05-24 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472565A (en) * 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
TW299559B (enrdf_load_stackoverflow) * 1994-04-20 1997-03-01 Tokyo Electron Co Ltd
JP3814176B2 (ja) * 2001-10-02 2006-08-23 キヤノンアネルバ株式会社 プラズマ処理装置
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
JP4672456B2 (ja) * 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
JP4704088B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置
US7993489B2 (en) * 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
US8789493B2 (en) * 2006-02-13 2014-07-29 Lam Research Corporation Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
US7829469B2 (en) * 2006-12-11 2010-11-09 Tokyo Electron Limited Method and system for uniformity control in ballistic electron beam enhanced plasma processing system
JP5231038B2 (ja) * 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
JP2009239012A (ja) * 2008-03-27 2009-10-15 Tokyo Electron Ltd プラズマ処理装置及びプラズマエッチング方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017183880A1 (ko) * 2016-04-18 2017-10-26 최상준 건식 에칭장치의 제어방법
US10636674B2 (en) 2016-04-18 2020-04-28 Vault Creation Co., Ltd. Control method of dry etching apparatus

Also Published As

Publication number Publication date
TW201001530A (en) 2010-01-01
JP2009239014A (ja) 2009-10-15
US20090242133A1 (en) 2009-10-01
TWI475610B (zh) 2015-03-01
CN101546700A (zh) 2009-09-30
CN101546700B (zh) 2011-04-13
KR20110131157A (ko) 2011-12-06

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