CN101546700B - 电极构造和基板处理装置 - Google Patents

电极构造和基板处理装置 Download PDF

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Publication number
CN101546700B
CN101546700B CN2009101294603A CN200910129460A CN101546700B CN 101546700 B CN101546700 B CN 101546700B CN 2009101294603 A CN2009101294603 A CN 2009101294603A CN 200910129460 A CN200910129460 A CN 200910129460A CN 101546700 B CN101546700 B CN 101546700B
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China
Prior art keywords
electrode
substrate
wafer
circumference
lateral electrode
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CN2009101294603A
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English (en)
Chinese (zh)
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CN101546700A (zh
Inventor
中山博之
本田昌伸
增泽健二
岩田学
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN2009101294603A 2008-03-27 2009-03-20 电极构造和基板处理装置 Active CN101546700B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008083046A JP5348919B2 (ja) 2008-03-27 2008-03-27 電極構造及び基板処理装置
JP2008083046 2008-03-27
JP2008-083046 2008-03-27

Publications (2)

Publication Number Publication Date
CN101546700A CN101546700A (zh) 2009-09-30
CN101546700B true CN101546700B (zh) 2011-04-13

Family

ID=41115344

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009101294603A Active CN101546700B (zh) 2008-03-27 2009-03-20 电极构造和基板处理装置

Country Status (5)

Country Link
US (1) US20090242133A1 (enrdf_load_stackoverflow)
JP (1) JP5348919B2 (enrdf_load_stackoverflow)
KR (1) KR20110131157A (enrdf_load_stackoverflow)
CN (1) CN101546700B (enrdf_load_stackoverflow)
TW (1) TWI475610B (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
CN101740298B (zh) * 2008-11-07 2012-07-25 东京毅力科创株式会社 等离子体处理装置及其构成部件
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
US9543123B2 (en) 2011-03-31 2017-01-10 Tokyo Electronics Limited Plasma processing apparatus and plasma generation antenna
JP2015053384A (ja) * 2013-09-06 2015-03-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6339866B2 (ja) * 2014-06-05 2018-06-06 東京エレクトロン株式会社 プラズマ処理装置およびクリーニング方法
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
KR101938306B1 (ko) * 2016-04-18 2019-01-14 최상준 건식 에칭장치의 제어방법
US10242845B2 (en) * 2017-01-17 2019-03-26 Lam Research Corporation Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber
KR102568084B1 (ko) * 2020-06-02 2023-08-21 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7489896B2 (ja) 2020-10-22 2024-05-24 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472565A (en) * 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
TW299559B (enrdf_load_stackoverflow) * 1994-04-20 1997-03-01 Tokyo Electron Co Ltd
JP3814176B2 (ja) * 2001-10-02 2006-08-23 キヤノンアネルバ株式会社 プラズマ処理装置
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
JP4672456B2 (ja) * 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
JP4704088B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置
US7993489B2 (en) * 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
US8789493B2 (en) * 2006-02-13 2014-07-29 Lam Research Corporation Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
US7829469B2 (en) * 2006-12-11 2010-11-09 Tokyo Electron Limited Method and system for uniformity control in ballistic electron beam enhanced plasma processing system
JP5231038B2 (ja) * 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
JP2009239012A (ja) * 2008-03-27 2009-10-15 Tokyo Electron Ltd プラズマ処理装置及びプラズマエッチング方法

Also Published As

Publication number Publication date
TW201001530A (en) 2010-01-01
JP2009239014A (ja) 2009-10-15
US20090242133A1 (en) 2009-10-01
JP5348919B2 (ja) 2013-11-20
TWI475610B (zh) 2015-03-01
CN101546700A (zh) 2009-09-30
KR20110131157A (ko) 2011-12-06

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