JP2009231370A - 不揮発性半導体記憶装置及びその製造方法 - Google Patents
不揮発性半導体記憶装置及びその製造方法 Download PDFInfo
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- 238000003860 storage Methods 0.000 title claims abstract description 223
- 239000004065 semiconductor Substances 0.000 title claims abstract description 132
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000010410 layer Substances 0.000 claims abstract description 264
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000011229 interlayer Substances 0.000 claims abstract description 51
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 150000002736 metal compounds Chemical class 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000004904 shortening Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- 230000004048 modification Effects 0.000 description 22
- 238000012986 modification Methods 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000009825 accumulation Methods 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910004143 HfON Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
【解決手段】本発明の不揮発性半導体記憶装置は、半導体基板と、前記半導体基板の表面内に、チャネル領域を挟んで互いに離間して設けられたソース領域及びドレイン領域と、前記チャネル領域上に設けられたトンネル絶縁膜と、前記トンネル絶縁膜上に設けられた絶縁性電荷蓄積層と、前記絶縁性電荷蓄積層上に設けられた両側部に絶縁層が設けられた導電性電荷蓄積層と、前記導電性電荷蓄積層上に設けられた層間絶縁膜と、前記層間絶縁膜上に設けられた制御ゲートとを備えている。
【選択図】図1
Description
図1は、本発明の第1の実施形態に係る不揮発性半導体記憶装置の素子構造を示す断面図である。この第1の実施形態にかかる不揮発性半導体記憶装置の素子構造は、第1導電型、例えば、p−型の半導体基板1内に、互いに離間されて形成された第2導電型、例えば、n+型のソース領域領域2及びドレイン領域3が設けられている。そして、p−型の半導体基板1のソース領域2とドレイン領域3間の領域がチャネル領域となる。ここで、p−型の右肩部の−表示は、p型不純物の濃度が薄いことを表し、n+型の右肩部の+表示は、n型不純物の濃度が濃いことを表している。ここで、ソース領域2及びドレイン領域3は、例えば、リンを注入することにより形成される。
次に、第1の実施形態の第1の変形例について説明する。図5は、本発明の第1の実施形態の第1の変形例に係る不揮発性半導体記憶装置の素子構造を示す断面図である。本実施形態は、導電性電荷蓄積層6の両側部に形成された絶縁層7が、空隙7bにより形成された点で第1の実施形態と異なる。
次に、第1の実施形態の第2の変形例に係る不揮発性半導体記憶装置について説明する。図7は、本発明の第1の実施形態の第2の変形例に係る不揮発性半導体記憶装置の素子構造を示す断面図である。本実施形態にかかる不揮発性半導体記憶装置は、導電性電荷蓄積層6の両側部に形成された絶縁層7が、空隙7bにより形成された点で第1の実施形態と異なる。また、本実施形態にかかる不揮発性半導体記憶装置は、制御ゲート9のチャネル長方向の長さが、トンネル絶縁膜4、絶縁性電荷蓄積層5、層間絶縁膜8のチャネル長方向の長さと同じであり導電性電荷蓄積層6のチャネル長方向の長さよりも長く形成されることが特徴であり、制御ゲート9のチャネル方向の長さが、トンネル絶縁膜4、絶縁性電荷蓄積層5、層間絶縁膜8のチャネル方向の長さより短く形成される第1の実施形態及び第1の実施形態の第1の変形例と異なる。制御ゲート9のチャネル方向の長さが、長く形成されることにより、制御ゲート9に印加された電圧が、半導体基板に伝わりやすくなる効果を有する。
図9は、本発明の第2の実施形態に係る不揮発性半導体記憶装置の素子構造を示す断面図である。本実施形態では、制御ゲート9のゲート長方向の長さが、トンネル絶縁膜4のゲート長方向の長さと比べて長く形成されている点が第1の実施形態と異なる。
2・・・ソース領域
3・・・ドレイン領域
4・・・トンネル絶縁膜
5・・・絶縁性電荷蓄積層
6・・・導電性電荷蓄積層
7・・・絶縁層
7b・・・空隙
8…層間絶縁膜
9・・・制御ゲート
10・・・絶縁膜
12、13、14・・・側壁絶縁膜
Claims (9)
- 半導体基板と、
前記半導体基板の表面内に、チャネル領域を挟んで互いに離間して設けられたソース領域及びドレイン領域と、
前記チャネル領域上に設けられたトンネル絶縁膜と、
前記トンネル絶縁膜上に設けられた絶縁性電荷蓄積層と、
前記絶縁性電荷蓄積層上に設けられた導電性電荷蓄積層と、
前記導電性電荷蓄積層上に設けられた層間絶縁膜と、
前記層間絶縁膜上に設けられた制御ゲートとを備え、
前記導電性電荷蓄積層のチャネル長方向の長さが、前記絶縁性電荷蓄積層のチャネル長方向の長さより短いことを特徴とする
不揮発性半導体記憶装置。 - 前記導電性電荷蓄積層の側部に絶縁層が設けられていることを特徴とする請求項1記載の不揮発性半導体記憶装置。
- 前記導電性電荷蓄積層の側部に空隙が形成されていることを特徴とする請求項1記載の不揮発性半導体記憶装置。
- 前記トンネル絶縁膜のチャネル長方向の長さが、前記制御ゲートのチャネル長方向の長さより短いことを特徴とする請求項1乃至請求項3のいずれか1項に記載の不揮発性半導体記憶装置。
- 前記導電性電荷蓄積層は、金属、金属化合物、ポリシリコン、又は金属とポリシリコンの混合物から成ることを特徴とする請求項1乃至請求項4のいずれか1項に記載の不揮発性半導体記憶装置。
- 半導体基板と、
前記半導体基板の表面内に、チャネル領域を挟んで互いに離間して設けられたソース領域及びドレイン領域と、
前記チャネル領域上に設けられた積層構造とを備え、
前記積層構造は、
トンネル絶縁膜と、
前記トンネル絶縁膜上に設けられた絶縁性電荷蓄積層と、
前記絶縁性電荷蓄積層上に設けられた導電性電荷蓄積層と、
前記導電性電荷蓄積層上に設けられた層間絶縁膜と、
前記層間絶縁膜上に設けられた制御ゲートとを備え、
前記積層構造のチャネル長方向の長さは、
前記制御ゲートから前記トンネル絶縁膜に向かって連続的に狭くなっていることを特徴とする
不揮発性半導体記憶装置。 - 半導体基板上に、トンネル絶縁膜、絶縁性電荷蓄積層、導電性電荷蓄積層、層間絶縁膜、及び制御ゲートを下から順次形成する工程と、
少なくともトンネル絶縁膜、絶縁性電荷蓄積層、導電性電荷蓄積層を含む積層膜をパターニングする工程と、
前記半導体基板の表面内にソース領域及びドレイン領域を形成する工程と、
前記導電性電荷蓄積層のチャネル長方向の長さを、前記絶縁性電荷蓄積層のチャネル長方向の長さより短くする工程と
を備えることを特徴とする不揮発性半導体記憶装置の製造方法。 - 前記導電性電荷蓄積層のチャネル長方向の長さを短くする工程は、
前記導電性電荷蓄積層の両側面を酸化することにより前記導電性電荷蓄積層の両側面に絶縁層を形成する工程を備えること
を特徴とする請求項7記載の不揮発性半導体記憶装置の製造方法。 - 前記絶縁層を形成する工程の後に、前記絶縁層を除去することにより前記導電性電荷蓄積層の両側面に空隙を形成する工程を備えることを特徴とする請求項8記載の不揮発性半導体記憶装置の製造方法。
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US12/339,993 US8710572B2 (en) | 2008-03-19 | 2008-12-19 | Nonvolatile semiconductor storage device having conductive and insulative charge storage films |
KR1020090023093A KR101090000B1 (ko) | 2008-03-19 | 2009-03-18 | 비휘발성 반도체 저장 장치와 그 제조 방법 |
CN2009101287898A CN101540328B (zh) | 2008-03-19 | 2009-03-19 | 非易失性半导体存储器件及其制造方法 |
US14/146,585 US8796753B2 (en) | 2008-03-19 | 2014-01-02 | Nonvolatile semiconductor storage device |
US14/313,501 US9331167B2 (en) | 2008-03-19 | 2014-06-24 | Nonvolatile semiconductor storage device and method for manufacturing the same |
US15/095,936 US10074749B2 (en) | 2008-03-19 | 2016-04-11 | Nonvolatile semiconductor storage device and method for manufacturing the same |
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JP2017163110A (ja) * | 2016-03-11 | 2017-09-14 | 東芝メモリ株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
JP2017163044A (ja) * | 2016-03-10 | 2017-09-14 | 東芝メモリ株式会社 | 半導体装置およびその製造方法 |
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US20140015031A1 (en) * | 2012-07-12 | 2014-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Memory Device |
JP2014022507A (ja) * | 2012-07-17 | 2014-02-03 | Toshiba Corp | 不揮発プログラマブルスイッチ |
FR3069374B1 (fr) | 2017-07-21 | 2020-01-17 | Stmicroelectronics (Rousset) Sas | Transistor mos a effet bosse reduit |
FR3069377B1 (fr) * | 2017-07-21 | 2020-07-03 | Stmicroelectronics (Rousset) Sas | Transistor mos a double blocs de grille a tension de claquage augmentee |
FR3069376B1 (fr) | 2017-07-21 | 2020-07-03 | Stmicroelectronics (Rousset) Sas | Transistor comprenant une grille elargie |
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US8796753B2 (en) | 2014-08-05 |
US20140117433A1 (en) | 2014-05-01 |
US10553729B2 (en) | 2020-02-04 |
US10074749B2 (en) | 2018-09-11 |
CN101540328A (zh) | 2009-09-23 |
CN101540328B (zh) | 2011-12-14 |
KR20090100302A (ko) | 2009-09-23 |
US8710572B2 (en) | 2014-04-29 |
US9331167B2 (en) | 2016-05-03 |
US20090236654A1 (en) | 2009-09-24 |
US20190027609A1 (en) | 2019-01-24 |
JP5210675B2 (ja) | 2013-06-12 |
US20140306281A1 (en) | 2014-10-16 |
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US20160225910A1 (en) | 2016-08-04 |
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