JP2009224509A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2009224509A
JP2009224509A JP2008066543A JP2008066543A JP2009224509A JP 2009224509 A JP2009224509 A JP 2009224509A JP 2008066543 A JP2008066543 A JP 2008066543A JP 2008066543 A JP2008066543 A JP 2008066543A JP 2009224509 A JP2009224509 A JP 2009224509A
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JP
Japan
Prior art keywords
metal
conductive film
containing conductive
semiconductor device
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008066543A
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English (en)
Japanese (ja)
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JP2009224509A5 (https=
Inventor
Tsutomu Osuga
勤 大須賀
Yoshihiro Sato
好弘 佐藤
Hisashi Ogawa
久 小川
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Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to JP2008066543A priority Critical patent/JP2009224509A/ja
Priority to PCT/JP2009/000184 priority patent/WO2009113227A1/ja
Publication of JP2009224509A publication Critical patent/JP2009224509A/ja
Priority to US12/619,222 priority patent/US8350332B2/en
Publication of JP2009224509A5 publication Critical patent/JP2009224509A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/014—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2008066543A 2008-03-14 2008-03-14 半導体装置及びその製造方法 Pending JP2009224509A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008066543A JP2009224509A (ja) 2008-03-14 2008-03-14 半導体装置及びその製造方法
PCT/JP2009/000184 WO2009113227A1 (ja) 2008-03-14 2009-01-20 半導体装置及びその製造方法
US12/619,222 US8350332B2 (en) 2008-03-14 2009-11-16 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008066543A JP2009224509A (ja) 2008-03-14 2008-03-14 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2009224509A true JP2009224509A (ja) 2009-10-01
JP2009224509A5 JP2009224509A5 (https=) 2010-04-02

Family

ID=41064901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008066543A Pending JP2009224509A (ja) 2008-03-14 2008-03-14 半導体装置及びその製造方法

Country Status (3)

Country Link
US (1) US8350332B2 (https=)
JP (1) JP2009224509A (https=)
WO (1) WO2009113227A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5349903B2 (ja) * 2008-02-28 2013-11-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US9070784B2 (en) 2011-07-22 2015-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate structure of a CMOS semiconductor device and method of forming the same
US9041116B2 (en) * 2012-05-23 2015-05-26 International Business Machines Corporation Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs)
US9401311B2 (en) * 2014-05-02 2016-07-26 International Business Machines Corporation Self aligned structure and method for high-K metal gate work function tuning
US9818746B2 (en) * 2016-01-13 2017-11-14 International Business Machines Corporation Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate
US11018139B2 (en) * 2019-08-13 2021-05-25 Micron Technology, Inc. Integrated transistors and methods of forming integrated transistors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237372A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 半導体装置
JP2007134456A (ja) * 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法
JP2008034751A (ja) * 2006-07-31 2008-02-14 Fujitsu Ltd 半導体装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001071807A1 (en) * 2000-03-24 2001-09-27 Fujitsu Limited Semiconductor device and method of manufacture thereof
US7183182B2 (en) * 2003-09-24 2007-02-27 International Business Machines Corporation Method and apparatus for fabricating CMOS field effect transistors
US7148546B2 (en) * 2003-09-30 2006-12-12 Texas Instruments Incorporated MOS transistor gates with doped silicide and methods for making the same
JP2007019396A (ja) 2005-07-11 2007-01-25 Renesas Technology Corp Ｍｏｓ構造を有する半導体装置およびその製造方法
US20070152276A1 (en) * 2005-12-30 2007-07-05 International Business Machines Corporation High performance CMOS circuits, and methods for fabricating the same
JP2007335512A (ja) 2006-06-13 2007-12-27 Renesas Technology Corp 半導体装置及びその製造方法
US20080017936A1 (en) * 2006-06-29 2008-01-24 International Business Machines Corporation Semiconductor device structures (gate stacks) with charge compositions
JP2008016538A (ja) * 2006-07-04 2008-01-24 Renesas Technology Corp Ｍｏｓ構造を有する半導体装置及びその製造方法
US20090039441A1 (en) * 2007-08-10 2009-02-12 Hongfa Luna Mosfet with metal gate electrode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237372A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 半導体装置
JP2007134456A (ja) * 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法
JP2008034751A (ja) * 2006-07-31 2008-02-14 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20100059827A1 (en) 2010-03-11
US8350332B2 (en) 2013-01-08
WO2009113227A1 (ja) 2009-09-17

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