JP2009203553A - 酸化亜鉛系スパッタリングターゲット、その製造方法、および酸化亜鉛系薄膜 - Google Patents
酸化亜鉛系スパッタリングターゲット、その製造方法、および酸化亜鉛系薄膜 Download PDFInfo
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Abstract
【解決手段】酸化亜鉛系スパッタリングターゲットは、InxHoyO3(ZnO)Tの組成を有し、x+y=2、x:yは1:0.001〜1:1であり、Tは0.1〜5である。
【選択図】なし
Description
Claims (13)
- InxHoyO3(ZnO)Tの組成を有し、x+y=2、x:yは1:0.001〜1:1であり、Tは0.1〜5であることを特徴とする酸化亜鉛系スパッタリングターゲット。
- 前記スパッタリングターゲットは、DCスパッタリングが可能なことを特徴とする請求項1に記載の酸化亜鉛系スパッタリングターゲット。
- 前記スパッタリングターゲットは、電気抵抗が100mΩ以下であることを特徴とする請求項1に記載の酸化亜鉛系スパッタリングターゲット。
- DCスパッタリングで請求項1に記載の酸化亜鉛系スパッタリングターゲットを用いて蒸着された酸化亜鉛系薄膜であって、電子移動度が10〜100cm2/V・sであることを特徴とする酸化亜鉛系薄膜。
- 前記蒸着は、アルゴン気体と酸素気体の合計体積に対する酸素気体の体積比が0%超過30%以下である雰囲気下でなされることを特徴とする請求項4に記載の酸化亜鉛系薄膜。
- 前記薄膜は、非晶質であることを特徴とする請求項4に記載の酸化亜鉛系薄膜。
- 前記薄膜の表面RMS粗度は、100Å以下であることを特徴とする請求項4に記載の酸化亜鉛系薄膜。
- 酸化インジウム粉末および酸化亜鉛粉末が添加されたスラリに酸化ホルミウム粉末を添加してスラリ混合物を準備するステップと、
前記スラリ混合物に分散剤を添加して湿式ミリングする分散ステップと、
前記分散したスラリ混合物を乾燥して顆粒粉末を形成する顆粒化ステップと、
前記顆粒粉末を成形して成形体を製造する成形ステップと、
前記成形体を焼結する焼結ステップと、
を含むことを特徴とする酸化亜鉛系スパッタリングターゲットの製造方法。 - 前記スラリ混合物を準備するステップは、
酸化ホルミウム粉末、第1分散剤、および水を混合し、湿式ミリングして酸化ホルミウムスラリを準備するステップと、
酸化インジウム粉末、第2分散剤、および水を混合し、湿式ミリングして酸化インジウムスラリを準備するステップと、
酸化亜鉛粉末、第3分散剤、および水を混合し、湿式ミリングして酸化亜鉛スラリを準備するステップと、
前記酸化ホルミウムスラリ、前記酸化インジウムスラリ、および前記酸化亜鉛スラリを混合するステップと、
を含むことを特徴とする請求項8に記載の酸化亜鉛系スパッタリングターゲットの製造方法。 - 前記第1分散剤、前記第2分散剤、または前記第3分散剤のうちの少なくとも1つは、ポリカルボン酸アンモニウム塩またはポリアクリル酸アンモニウム塩であることを特徴とする請求項9に記載の酸化亜鉛系スパッタリングターゲットの製造方法。
- 前記第1分散剤は前記酸化ホルミウムスラリ内に0.8〜2.0重量%、前記第2分散剤は前記酸化インジウムスラリ内に0.5〜1.5重量%、前記第3分散剤は前記酸化亜鉛スラリ内に0.1〜0.5重量%、それぞれ含まれることを特徴とする請求項9に記載の酸化亜鉛系スパッタリングターゲットの製造方法。
- 前記顆粒粉末は、国際標準規格であるASTM測定に基づいて1.3以上の見掛け密度を示すことを特徴とする請求項8に記載の酸化亜鉛系スパッタリングターゲットの製造方法。
- 前記焼結ステップは、1300℃〜1600℃の温度範囲および酸素または空気雰囲気下でなされることを特徴とする請求項8に記載の酸化亜鉛系スパッタリングターゲットの製造方法。
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Citations (9)
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JPH03165832A (ja) * | 1989-07-28 | 1991-07-17 | Nagao Kogyo:Kk | 傾斜機能材料の成層方法及びその成層装置 |
WO1994006947A1 (fr) * | 1992-09-24 | 1994-03-31 | Toto Ltd. | Materiau a gradient fonctionnel et procede de production |
JPH07258836A (ja) * | 1994-03-22 | 1995-10-09 | Tosoh Corp | アルミニウムドープ酸化亜鉛焼結体およびその製造方法並びにその用途 |
JP2001303239A (ja) * | 2000-04-21 | 2001-10-31 | Nikko Materials Co Ltd | Itoターゲットの製造方法 |
JP2002373527A (ja) * | 2001-06-18 | 2002-12-26 | Nikko Materials Co Ltd | 透明電極膜及び同電極膜を形成するためのスパッタリングターゲット |
JP2004294630A (ja) * | 2003-03-26 | 2004-10-21 | Idemitsu Kosan Co Ltd | 反射型電極基板及びその製造方法、並びにその製造方法に用いるエッチング組成物 |
JP2005314734A (ja) * | 2004-04-28 | 2005-11-10 | Idemitsu Kosan Co Ltd | スパッタリングターゲット及び透明導電膜及び透明導電ガラス基板 |
WO2006070715A1 (ja) * | 2004-12-28 | 2006-07-06 | Idemitsu Kosan Co., Ltd. | 導電膜、導電性基材及び有機エレクトロルミネッセンス素子 |
JP2007210807A (ja) * | 2006-02-07 | 2007-08-23 | Sumitomo Metal Mining Co Ltd | Zn−Nb−Ga酸化物焼結体およびその製造方法 |
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JP2004022625A (ja) * | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
KR101002537B1 (ko) * | 2002-08-02 | 2010-12-17 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟, 소결체, 이들을 사용하여 제조한 도전막,유기 el 소자, 및 이것에 사용하는 기판 |
US20070037402A1 (en) * | 2003-02-05 | 2007-02-15 | Kazuyoshi Inoue | Method for manufacturing semi-transparent semi-reflective electrode substrate, reflective element substrate, method for manufacturing same, etching composition used for the method for manufacturing the reflective electrode substrate |
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2008
- 2008-02-26 KR KR1020080017512A patent/KR101349675B1/ko not_active IP Right Cessation
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2009
- 2009-02-26 US US12/393,782 patent/US20090211904A1/en not_active Abandoned
- 2009-02-26 JP JP2009044091A patent/JP2009203553A/ja active Pending
Patent Citations (9)
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JPH03165832A (ja) * | 1989-07-28 | 1991-07-17 | Nagao Kogyo:Kk | 傾斜機能材料の成層方法及びその成層装置 |
WO1994006947A1 (fr) * | 1992-09-24 | 1994-03-31 | Toto Ltd. | Materiau a gradient fonctionnel et procede de production |
JPH07258836A (ja) * | 1994-03-22 | 1995-10-09 | Tosoh Corp | アルミニウムドープ酸化亜鉛焼結体およびその製造方法並びにその用途 |
JP2001303239A (ja) * | 2000-04-21 | 2001-10-31 | Nikko Materials Co Ltd | Itoターゲットの製造方法 |
JP2002373527A (ja) * | 2001-06-18 | 2002-12-26 | Nikko Materials Co Ltd | 透明電極膜及び同電極膜を形成するためのスパッタリングターゲット |
JP2004294630A (ja) * | 2003-03-26 | 2004-10-21 | Idemitsu Kosan Co Ltd | 反射型電極基板及びその製造方法、並びにその製造方法に用いるエッチング組成物 |
JP2005314734A (ja) * | 2004-04-28 | 2005-11-10 | Idemitsu Kosan Co Ltd | スパッタリングターゲット及び透明導電膜及び透明導電ガラス基板 |
WO2006070715A1 (ja) * | 2004-12-28 | 2006-07-06 | Idemitsu Kosan Co., Ltd. | 導電膜、導電性基材及び有機エレクトロルミネッセンス素子 |
JP2007210807A (ja) * | 2006-02-07 | 2007-08-23 | Sumitomo Metal Mining Co Ltd | Zn−Nb−Ga酸化物焼結体およびその製造方法 |
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US20090211904A1 (en) | 2009-08-27 |
KR101349675B1 (ko) | 2014-01-10 |
KR20090092164A (ko) | 2009-08-31 |
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