JP2009175436A5 - - Google Patents

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Publication number
JP2009175436A5
JP2009175436A5 JP2008013962A JP2008013962A JP2009175436A5 JP 2009175436 A5 JP2009175436 A5 JP 2009175436A5 JP 2008013962 A JP2008013962 A JP 2008013962A JP 2008013962 A JP2008013962 A JP 2008013962A JP 2009175436 A5 JP2009175436 A5 JP 2009175436A5
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JP
Japan
Prior art keywords
underlayer film
resist underlayer
condition
resist
formula
Prior art date
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Application number
JP2008013962A
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English (en)
Japanese (ja)
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JP2009175436A (ja
JP5141882B2 (ja
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Priority to JP2008013962A priority Critical patent/JP5141882B2/ja
Priority claimed from JP2008013962A external-priority patent/JP5141882B2/ja
Publication of JP2009175436A publication Critical patent/JP2009175436A/ja
Publication of JP2009175436A5 publication Critical patent/JP2009175436A5/ja
Application granted granted Critical
Publication of JP5141882B2 publication Critical patent/JP5141882B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008013962A 2008-01-24 2008-01-24 バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 Expired - Fee Related JP5141882B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008013962A JP5141882B2 (ja) 2008-01-24 2008-01-24 バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008013962A JP5141882B2 (ja) 2008-01-24 2008-01-24 バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法

Publications (3)

Publication Number Publication Date
JP2009175436A JP2009175436A (ja) 2009-08-06
JP2009175436A5 true JP2009175436A5 (https=) 2010-12-16
JP5141882B2 JP5141882B2 (ja) 2013-02-13

Family

ID=41030592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008013962A Expired - Fee Related JP5141882B2 (ja) 2008-01-24 2008-01-24 バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法

Country Status (1)

Country Link
JP (1) JP5141882B2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5888523B2 (ja) * 2011-03-15 2016-03-22 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2013141015A1 (ja) * 2012-03-23 2013-09-26 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト下層膜形成組成物
KR101866209B1 (ko) 2012-05-07 2018-06-11 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성조성물
CN105027005B (zh) 2013-02-25 2020-02-07 日产化学工业株式会社 含有具有羟基的芳基磺酸盐的抗蚀剂下层膜形成用组合物
WO2014208542A1 (ja) 2013-06-26 2014-12-31 日産化学工業株式会社 置換された架橋性化合物を含むレジスト下層膜形成組成物
US10113083B2 (en) 2013-08-08 2018-10-30 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing polymer which contains nitrogen-containing ring compound
JP6335807B2 (ja) * 2015-01-27 2018-05-30 四国化成工業株式会社 新規なグリコールウリル類とその利用
US9908990B2 (en) 2015-04-17 2018-03-06 Samsung Sdi Co., Ltd. Organic layer composition, organic layer, and method of forming patterns
KR102924498B1 (ko) 2020-09-28 2026-02-06 닛산 가가쿠 가부시키가이샤 플루오로알킬기를 갖는 유기산 또는 그의 염을 포함하는 레지스트 하층막형성 조성물
KR20250023875A (ko) * 2023-08-10 2025-02-18 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
KR20250042527A (ko) * 2023-09-20 2025-03-27 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0980755A (ja) * 1995-09-12 1997-03-28 Sony Corp レジストプロセス及び多層レジスト膜
JP3506357B2 (ja) * 1996-12-13 2004-03-15 東京応化工業株式会社 リソグラフィー用下地材
EP1172695A1 (en) * 2000-07-14 2002-01-16 Shipley Company LLC Barrier layer
AU2003271123A1 (en) * 2002-10-09 2004-05-04 Nissan Chemical Industries, Ltd. Composition for forming antireflection film for lithography
JP2005142339A (ja) * 2003-11-06 2005-06-02 Semiconductor Leading Edge Technologies Inc パターン形成方法
JP2005268321A (ja) * 2004-03-16 2005-09-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
TWI340296B (en) * 2005-03-20 2011-04-11 Rohm & Haas Elect Mat Coating compositions for use with an overcoated photoresist
KR100655064B1 (ko) * 2005-05-27 2006-12-06 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
JP4766284B2 (ja) * 2006-03-27 2011-09-07 日産化学工業株式会社 Ｑｃｍセンサーを用いる熱硬化膜中の昇華物の測定方法

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