TWI456351B - 用於光阻底層之包含芳香環的聚合物、包含該聚合物之光阻底層組成物及使用該組成物將裝置圖案化的方法 - Google Patents

用於光阻底層之包含芳香環的聚合物、包含該聚合物之光阻底層組成物及使用該組成物將裝置圖案化的方法 Download PDF

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TWI456351B
TWI456351B TW099125591A TW99125591A TWI456351B TW I456351 B TWI456351 B TW I456351B TW 099125591 A TW099125591 A TW 099125591A TW 99125591 A TW99125591 A TW 99125591A TW I456351 B TWI456351 B TW I456351B
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Taiwan
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photoresist
group
aromatic ring
aromatic
underlayer
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TW099125591A
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TW201120578A (en
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Sung-Wook Cho
Kyong-Ho Yoon
Min-Soo Kim
Seung-Bae Oh
Jee-Yun Song
Hwan-Sung Cheon
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Cheil Ind Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/127—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from carbon dioxide, carbonyl halide, carboxylic acids or their derivatives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Phenolic Resins Or Amino Resins (AREA)

Claims (12)

  1. 一種用於光阻底層之包含芳香環的聚合物，其包含由下列化學式1表示的一單元： 其中，R1和R2獨立地為氫、C1至C10烷基基團，或一芳香基團，n為一或更多數量的整數，且A為一官能基，其係衍生自下列化學式1b所表示的芳香化合物： 其中，R7和R8獨立地為氫、羥基基團、烷氧基基團，或C1-C4低級烷基基團，R9和R10獨立地為氫、羥基基團、C1-C4低級烷基基團，或烷氧基基團，且 X為O(氧)或S(硫)。
  2. 如申請專利範圍第1項之用於光阻底層之包含芳香環的聚合物，其中該芳香基團包含一C5至C20芳香基團。
  3. 如申請專利範圍第1項之用於光阻底層之包含芳香環的聚合物，其中該包含芳香環的聚合物具有2000至20,000的重量平均分子量(Mw)。
  4. 如申請專利範圍第1項之聚合物，其中該n為1至100的整數。
  5. 一種光阻底層組成物，其包含：(a)一種包含芳香環的聚合物，其包括由下列化學式1表示的一單元；以及(b)一有機溶劑： 其中，R1和R2獨立地為氫、C1至C10烷基基團，或一芳香基團，n為一或更多數量的整數，且A為一官能基，其係衍生自下列化學式1b所表示的芳香化合物：[化學式1b] 其中，R7和R8獨立地為氫、羥基基團、烷氧基基團，或C1-C4低級烷基基團，R9和R10獨立地為氫、羥基基團、C1-C4低級烷基基團，或烷氧基基團，且X為O(氧)或S(硫)。
  6. 如申請專利範圍第5項之光阻底層組成物，其中該包含芳香環的聚合物(a)係以1至20wt%的量予以含括，以及和且該有機溶劑(b)係以80至99wt%的量予以含括。
  7. 如申請專利範圍第5項之光阻底層組成物，其中該光阻底層組成物進一步包含一界面活性劑。
  8. 如申請專利範圍第5項之光阻底層組成物，其中該光阻底層組成物進一步包含一交聯組分。
  9. 一種用於圖案化裝置的方法，其包含：(a)於一基材上提供一裝置；(b)使用如申請專利範圍第5項之光阻底層組成物於該材料層之上形成一光阻底層；(c)於該光阻底層上形成一光阻層；(d)令該基材上的該光阻層曝光； (e)令該曝光的基材顯影；以及(f)蝕刻該顯影的基材。
  10. 如申請專利範圍第9項之用於圖案化裝置的方法，其中該方法進一步包含在形成該光阻層的步驟(c)之前，形成一含矽光阻底層。
  11. 如申請專利範圍第9項之用於圖案化裝置的方法，其中該方法進一步包含在形成該光阻層的步驟(c)之前，於該含矽光阻底層上形成底部抗反射塗層(BARC)。
  12. 如申請專利範圍第9項之用於圖案化裝置的方法，其中該方法為製造半導體積體電路裝置的方法。
TW099125591A 2009-07-31 2010-08-02 用於光阻底層之包含芳香環的聚合物、包含該聚合物之光阻底層組成物及使用該組成物將裝置圖案化的方法 TWI456351B (zh)

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KR20090070937 2009-07-31
KR1020100074307A KR101333703B1 (ko) 2009-07-31 2010-07-30 레지스트 하층막용 방향족 고리 함유 중합체, 이를 포함하는 레지스트 하층막 조성물 및 이 조성물을 이용한 소자의 패턴 형성 방법

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US9971243B2 (en) 2015-06-10 2018-05-15 Samsung Sdi Co., Ltd. Polymer, organic layer composition, organic layer, and method of forming patterns
TWI777426B (zh) * 2020-02-27 2022-09-11 台灣積體電路製造股份有限公司 光阻底層組成物與製造半導體裝置的方法
KR102551719B1 (ko) 2021-07-20 2023-07-06 엠에이치디 주식회사 스타형 구조를 갖는 실리콘 함유 레지스트 하층막 형성용 조성물

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US20020055550A1 (en) * 2000-09-12 2002-05-09 Shin-Etsu Chemical Co. Ltd. Organosiloxane polymer, photo-curable resin composition, patterning process, and substrate protective coating
TW200825626A (en) * 2006-08-01 2008-06-16 Shinetsu Chemical Co Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern

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JP5062420B2 (ja) * 2005-05-24 2012-10-31 日産化学工業株式会社 ポリシラン化合物を含むリソグラフィー用下層膜形成組成物
KR100725793B1 (ko) 2005-12-26 2007-06-08 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
KR100760522B1 (ko) 2006-09-28 2007-10-04 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
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TW200825626A (en) * 2006-08-01 2008-06-16 Shinetsu Chemical Co Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern

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KR20110013332A (ko) 2011-02-09
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