JP2009158633A - 不揮発性半導体記憶装置およびその製造方法 - Google Patents

不揮発性半導体記憶装置およびその製造方法 Download PDF

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Publication number
JP2009158633A
JP2009158633A JP2007333612A JP2007333612A JP2009158633A JP 2009158633 A JP2009158633 A JP 2009158633A JP 2007333612 A JP2007333612 A JP 2007333612A JP 2007333612 A JP2007333612 A JP 2007333612A JP 2009158633 A JP2009158633 A JP 2009158633A
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Japan
Prior art keywords
floating gate
diffusion layer
memory device
semiconductor memory
impurity diffusion
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JP2007333612A
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English (en)
Japanese (ja)
Inventor
Koichi Yamada
光一 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2007333612A priority Critical patent/JP2009158633A/ja
Priority to US12/341,209 priority patent/US8189385B2/en
Priority to CN200810185251.6A priority patent/CN101471383B/zh
Publication of JP2009158633A publication Critical patent/JP2009158633A/ja
Pending legal-status Critical Current

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2007333612A 2007-12-26 2007-12-26 不揮発性半導体記憶装置およびその製造方法 Pending JP2009158633A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007333612A JP2009158633A (ja) 2007-12-26 2007-12-26 不揮発性半導体記憶装置およびその製造方法
US12/341,209 US8189385B2 (en) 2007-12-26 2008-12-22 Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array
CN200810185251.6A CN101471383B (zh) 2007-12-26 2008-12-24 非易失性半导体存储装置,其制造方法以及非易失性存储器阵列

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007333612A JP2009158633A (ja) 2007-12-26 2007-12-26 不揮発性半導体記憶装置およびその製造方法

Publications (1)

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JP2009158633A true JP2009158633A (ja) 2009-07-16

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JP2007333612A Pending JP2009158633A (ja) 2007-12-26 2007-12-26 不揮発性半導体記憶装置およびその製造方法

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JP (1) JP2009158633A (zh)
CN (1) CN101471383B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102222646B (zh) * 2011-04-25 2015-08-19 上海华虹宏力半导体制造有限公司 分栅式存储器制造方法以及分栅式存储器
KR102415409B1 (ko) * 2015-09-09 2022-07-04 에스케이하이닉스 주식회사 이피롬 셀 및 그 제조방법과, 이피롬 셀 어레이

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160166A (en) * 1981-03-27 1982-10-02 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JP2007067428A (ja) * 2002-05-10 2007-03-15 Toshiba Corp 不揮発性半導体記憶置
JP2007251183A (ja) * 2006-03-13 2007-09-27 Silicon Storage Technology Inc 単一ゲートの不揮発性フラッシュメモリセル

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4335659B2 (ja) * 2003-12-19 2009-09-30 株式会社ルネサステクノロジ 不揮発性半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160166A (en) * 1981-03-27 1982-10-02 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JP2007067428A (ja) * 2002-05-10 2007-03-15 Toshiba Corp 不揮発性半導体記憶置
JP2007251183A (ja) * 2006-03-13 2007-09-27 Silicon Storage Technology Inc 単一ゲートの不揮発性フラッシュメモリセル

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Publication number Publication date
CN101471383A (zh) 2009-07-01
CN101471383B (zh) 2013-06-26

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