JP2009147181A - Soi基板を用いた半導体装置及びその製造方法 - Google Patents
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- JP2009147181A JP2009147181A JP2007324136A JP2007324136A JP2009147181A JP 2009147181 A JP2009147181 A JP 2009147181A JP 2007324136 A JP2007324136 A JP 2007324136A JP 2007324136 A JP2007324136 A JP 2007324136A JP 2009147181 A JP2009147181 A JP 2009147181A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 abstract description 13
- 230000006378 damage Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
Abstract
【解決手段】本発明の第1の態様は、半導体支持基板と、前記半導体支持基板上に形成された絶縁層と、前記絶縁層上に形成されたSOI層とからなるSOI基板構造を有する半導体装置において、前記SOI層には、ドレイン領域とソース領域とが形成され、前記ソース領域は前記絶縁層に接するが、前記ドレイン領域は前記絶縁層に接しないことを特徴とする。
【選択図】図2
Description
On Insulator)技術は、トランジスタの性能効率を高める観点から注目されているトランジスタの新しい製造プロセス技術である。通常のバルクCMOSでは、シリコン基板上にトランジスタを形成する。しかし、SOI構造を有するCMOSでは絶縁物(SiO2)の上のシリコン層上にトランジスタを形成する。SOI構造を有するCMOSにおいては、隣接する素子同士が完全に分離されているため、リークやノイズなどの電気的な干渉を考慮する必要がない。すなわち、SOI構造を有するCMOSは、寄生容量が削減され、リーク電流が少なく、トランジスタ相互の電気的干渉が低いことから、理想的なトランジスタといえる。
SOIはSOIトランジスタとしての特性に優れている。しかし、FD SOIに特化した製造方法が必要であるなど、問題点もある。一方、PD SOIはFD SOIよりもバルクに近い性質を持つ。
MOSFETと同様の厚さとした状態で、BOX層をドレイン電界が通り抜けることにより発生する短チャネル効果を劇的に抑制でき、さらにキンク効果を抑制することができるとされた完全空乏型SOI
MOSFETが開示されている。そして、p+領域が、n+ソース領域およびn+ドレイン領域の少なくともいずれか一方と埋込酸化膜層の間から、n+ソース領域およびn+ドレイン領域の少なくともいずれか一方のp-ボディー領域側とは反対側の隣接部分に亘って、L字状に形成されている。
ソース領域108の下部の絶縁膜104の厚みt1:0.15μm(1500Å)
ドレイン領域110の下部の絶縁膜104の厚みt2:0.05μm(500Å)
ソース領域108の厚みt3:0.05μm(500Å)
SOI層106の厚みt4:0.15μm(1500Å)
ドレイン領域110の厚みt5:0.10μm(1000Å)
まず、図3(A)に示すように、半導体支持基板(Si基板)102を用意する。次に、図3(B)に示すように、CVD法によりシリコン酸化膜(SiO2)104aを250Åの厚さで半導体支持基板(Si基板)102上に堆積形成する。その後、シリコン酸化膜(SiO2)104a上にSi3N4膜122を2000Åの厚さで堆積形成する。
本発明の製造方法を採用することにより、本発明に係る半導体装置の構造の実現が可能となる。
104 絶縁層(BOX層)
106 SOI層
108 ソース領域
110 ドレイン領域
Claims (3)
- 半導体支持基板と、前記半導体支持基板上に形成された絶縁層と、前記絶縁層上に形成されたSOI層とからなるSOI基板構造を有する半導体装置において、
前記SOI層には、ドレイン領域とソース領域とが形成され、
前記ソース領域は前記絶縁層に接するが、前記ドレイン領域は前記絶縁層に接しないことを特徴とする半導体装置。 - 前記絶縁層は、前記ソース領域に向かって突出した段差部を有することを特徴とする請求項1に記載の半導体装置。
- 半導体支持基板を準備する工程と;
前記半導体支持基板上に絶縁層を形成する工程と;
前記絶縁層上にSOI層を形成する工程と;
前記SOI層にソース領域及びドレイン領域を形成する工程とを含み、
前記絶縁層を形成する工程において、当該絶縁層の前記ソース領域の下部を厚くし、前記ドレイン領域の下部を薄くすることにより、前記ソース領域が前記絶縁層に接し、前記ドレイン領域が前記絶縁層に接しない構造とすることを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2007324136A JP4704416B2 (ja) | 2007-12-17 | 2007-12-17 | Soi基板を用いた半導体装置及びその製造方法 |
US12/336,257 US7859063B2 (en) | 2007-12-17 | 2008-12-16 | Semiconductor device using SOI-substrate |
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JP2007324136A JP4704416B2 (ja) | 2007-12-17 | 2007-12-17 | Soi基板を用いた半導体装置及びその製造方法 |
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JP2009147181A true JP2009147181A (ja) | 2009-07-02 |
JP4704416B2 JP4704416B2 (ja) | 2011-06-15 |
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US (1) | US7859063B2 (ja) |
JP (1) | JP4704416B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US9029949B2 (en) | 2013-09-25 | 2015-05-12 | International Business Machines Corporation | Semiconductor-on-insulator (SOI) structures with local heat dissipater(s) and methods |
US10115657B2 (en) * | 2016-03-23 | 2018-10-30 | Eaton Intelligent Power Limited | Dielectric heat path devices, and systems and methods using the same |
US10283945B2 (en) | 2016-03-23 | 2019-05-07 | Eaton Intelligent Power Limited | Load center thermally conductive component |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326556A (ja) * | 1992-05-18 | 1993-12-10 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPH08172199A (ja) * | 1994-12-20 | 1996-07-02 | Citizen Watch Co Ltd | 半導体装置とその製造方法 |
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US6617226B1 (en) * | 1999-06-30 | 2003-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
JP2005150402A (ja) | 2003-11-14 | 2005-06-09 | Toyo Univ | 完全空乏型soimosfet |
KR100513310B1 (ko) * | 2003-12-19 | 2005-09-07 | 삼성전자주식회사 | 비대칭 매몰절연막을 채택하여 두 개의 다른 동작모드들을갖는 반도체소자 및 그것을 제조하는 방법 |
KR100593739B1 (ko) * | 2004-09-09 | 2006-06-28 | 삼성전자주식회사 | 바디-소스 접속을 갖는 모스 전계효과 트랜지스터 및 그제조방법 |
KR100669556B1 (ko) | 2004-12-08 | 2007-01-15 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
US20060125041A1 (en) * | 2004-12-14 | 2006-06-15 | Electronics And Telecommunications Research Institute | Transistor using impact ionization and method of manufacturing the same |
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- 2007-12-17 JP JP2007324136A patent/JP4704416B2/ja not_active Expired - Fee Related
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326556A (ja) * | 1992-05-18 | 1993-12-10 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPH08172199A (ja) * | 1994-12-20 | 1996-07-02 | Citizen Watch Co Ltd | 半導体装置とその製造方法 |
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Publication number | Publication date |
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JP4704416B2 (ja) | 2011-06-15 |
US7859063B2 (en) | 2010-12-28 |
US20090152630A1 (en) | 2009-06-18 |
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