JP2009119694A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009119694A5 JP2009119694A5 JP2007295452A JP2007295452A JP2009119694A5 JP 2009119694 A5 JP2009119694 A5 JP 2009119694A5 JP 2007295452 A JP2007295452 A JP 2007295452A JP 2007295452 A JP2007295452 A JP 2007295452A JP 2009119694 A5 JP2009119694 A5 JP 2009119694A5
- Authority
- JP
- Japan
- Prior art keywords
- etching mask
- formula
- predetermined pattern
- substrate
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims 6
- 239000000463 material Substances 0.000 claims 3
- 229920005992 thermoplastic resin Polymers 0.000 claims 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- -1 cyclic olefin Chemical class 0.000 claims 2
- 229910052805 deuterium Inorganic materials 0.000 claims 2
- 125000004431 deuterium atom Chemical group 0.000 claims 2
- 125000005843 halogen group Chemical group 0.000 claims 2
- 125000005842 heteroatom Chemical group 0.000 claims 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 125000001424 substituent group Chemical group 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 238000005984 hydrogenation reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 239000004711 α-olefin Substances 0.000 claims 1
- 239000000088 plastic resin Substances 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007295452A JP5470528B2 (ja) | 2007-11-14 | 2007-11-14 | エッチングマスク、エッチングマスク付き基材、微細加工品および微細加工品の製造方法 |
| TW097143003A TWI435800B (zh) | 2007-11-14 | 2008-11-07 | An etching mask, a substrate having an etching mask, a method of manufacturing a fine processed product and a fine processed product |
| PCT/JP2008/003309 WO2009063639A1 (ja) | 2007-11-14 | 2008-11-13 | エッチングマスク、エッチングマスク付き基材、微細加工品および微細加工品の製造方法 |
| KR1020107012437A KR101590650B1 (ko) | 2007-11-14 | 2008-11-13 | 에칭 마스크, 에칭 마스크를 구비한 기재, 미세 가공품 및 미세 가공품의 제조방법 |
| US12/742,381 US8597769B2 (en) | 2007-11-14 | 2008-11-13 | Etching mask, base material having etching mask, finely processed article, and method for production of finely processed article |
| EP08848634A EP2221162A4 (en) | 2007-11-14 | 2008-11-13 | ACID MASK, BASIC MATERIAL WITH PAINT MASK, FINISHED ARTICLE AND METHOD FOR PRODUCING A FINISHED ARTICLE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007295452A JP5470528B2 (ja) | 2007-11-14 | 2007-11-14 | エッチングマスク、エッチングマスク付き基材、微細加工品および微細加工品の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009119694A JP2009119694A (ja) | 2009-06-04 |
| JP2009119694A5 true JP2009119694A5 (https=) | 2011-01-06 |
| JP5470528B2 JP5470528B2 (ja) | 2014-04-16 |
Family
ID=40638494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007295452A Expired - Fee Related JP5470528B2 (ja) | 2007-11-14 | 2007-11-14 | エッチングマスク、エッチングマスク付き基材、微細加工品および微細加工品の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8597769B2 (https=) |
| EP (1) | EP2221162A4 (https=) |
| JP (1) | JP5470528B2 (https=) |
| KR (1) | KR101590650B1 (https=) |
| TW (1) | TWI435800B (https=) |
| WO (1) | WO2009063639A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5448589B2 (ja) * | 2009-06-12 | 2014-03-19 | 富士フイルム株式会社 | パターン形成方法 |
| JP2012149151A (ja) * | 2011-01-18 | 2012-08-09 | Jsr Corp | エッチングマスク用樹脂及びエッチングマスク用コート材並びにサファイア基板のパターン形成方法 |
| JP5767615B2 (ja) * | 2011-10-07 | 2015-08-19 | 富士フイルム株式会社 | インプリント用下層膜組成物およびこれを用いたパターン形成方法 |
| WO2018225707A1 (ja) * | 2017-06-09 | 2018-12-13 | 三井化学株式会社 | 微細凹凸パターン付き基板の製造方法、樹脂組成物および積層体 |
| US11802342B2 (en) | 2021-10-19 | 2023-10-31 | Tokyo Electron Limited | Methods for wet atomic layer etching of ruthenium |
| US12506011B2 (en) | 2023-12-15 | 2025-12-23 | Tokyo Electron Limited | Methods for wet atomic layer etching of transition metal oxide dielectric materials |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4571375A (en) * | 1983-10-24 | 1986-02-18 | Benedikt George M | Ring-opened polynorbornene negative photoresist with bisazide |
| US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
| KR100682169B1 (ko) * | 1999-07-30 | 2007-02-12 | 주식회사 하이닉스반도체 | 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물 |
| JP4780262B2 (ja) * | 2000-04-27 | 2011-09-28 | 信越化学工業株式会社 | 高分子化合物、化学増幅レジスト材料及びパターン形成方法 |
| KR100527533B1 (ko) * | 2000-06-21 | 2005-11-09 | 주식회사 하이닉스반도체 | Ｔｉｐｓ 공정용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물 |
| JP2002184719A (ja) * | 2000-12-19 | 2002-06-28 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
| JP2002244296A (ja) * | 2001-02-19 | 2002-08-30 | Matsushita Electric Ind Co Ltd | ホールパターンの形成方法 |
| JP3656991B2 (ja) | 2001-09-12 | 2005-06-08 | 丸善石油化学株式会社 | 環状オレフィン系共重合体の製造方法 |
| KR101366505B1 (ko) * | 2005-06-10 | 2014-02-24 | 오브듀캇 아베 | 고리형 올레핀 공중합체를 포함하는 임프린트 스탬프 |
| KR100969440B1 (ko) * | 2005-09-27 | 2010-07-14 | 에스씨아이브이에이엑스 가부시키가이샤 | 열 임프린트용 수지 |
| US20100019410A1 (en) * | 2005-12-09 | 2010-01-28 | Scivax Corporation | Resin for Thermal Imprinting |
| JP2007192875A (ja) * | 2006-01-17 | 2007-08-02 | Tokyo Ohka Kogyo Co Ltd | 下層膜形成用材料、積層体およびパターン形成方法 |
| WO2007111215A1 (ja) * | 2006-03-27 | 2007-10-04 | Pioneer Corporation | パターン転写用モールド |
-
2007
- 2007-11-14 JP JP2007295452A patent/JP5470528B2/ja not_active Expired - Fee Related
-
2008
- 2008-11-07 TW TW097143003A patent/TWI435800B/zh not_active IP Right Cessation
- 2008-11-13 WO PCT/JP2008/003309 patent/WO2009063639A1/ja not_active Ceased
- 2008-11-13 EP EP08848634A patent/EP2221162A4/en not_active Withdrawn
- 2008-11-13 KR KR1020107012437A patent/KR101590650B1/ko not_active Expired - Fee Related
- 2008-11-13 US US12/742,381 patent/US8597769B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009119694A5 (https=) | ||
| CN103261238B (zh) | 光压印用树脂组合物、图案形成方法及蚀刻掩模 | |
| Khang et al. | Sub-100 nm patterning with an amorphous fluoropolymer mold | |
| CN101084468B (zh) | 纳米光刻术和微光刻术用物质组合物 | |
| TWI607028B (zh) | 有機膜形成用組成物之製造方法 | |
| JP2014531615A (ja) | ブロックコポリマー及び該ブロックコポリマーを用いたリソグラフィーパターニング | |
| Penmatsa et al. | Fabrication of carbon nanostructures using photo-nanoimprint lithography and pyrolysis | |
| JP2018507933A5 (https=) | ||
| KR20130094264A (ko) | 자기-조립된 구조, 이의 제조방법 및 이를 포함하는 제품 | |
| Pina‐Hernandez et al. | High‐throughput and etch‐selective nanoimprinting and stamping based on fast‐thermal‐curing poly (dimethylsiloxane) s | |
| CN104837886A (zh) | 微细结构体的制造方法及纳米压印用光固化性组合物 | |
| TW201135362A (en) | Resin compositions for light imprint, pattern forming method, and etching mask | |
| Segalman | Directing self-assembly toward perfection | |
| JP2009501091A (ja) | ナノパターニング方法、硬化されたレジストフィルム及び該レジストフィルムを含有する物品 | |
| Bhandaru et al. | Lithographic tuning of polymeric thin film surfaces by stress relaxation | |
| TW200912546A (en) | A method of making a secondary imprint on an imprinted polymer | |
| KR101590650B1 (ko) | 에칭 마스크, 에칭 마스크를 구비한 기재, 미세 가공품 및 미세 가공품의 제조방법 | |
| KR100798398B1 (ko) | 나노소재기반 전도성 레지스트, 그의 제조방법 및나노소재기반 전도성레지스트를 이용한 전극패턴 형성방법 | |
| Zhou et al. | Replication of mold for UV-nanoimprint lithography using AAO membrane | |
| JPWO2015016156A1 (ja) | 光応答性の分散剤を含有する分散剤含有炭素材料膜、該分散剤含有炭素材料膜を用いた炭素材料膜の製造方法 | |
| Zhang et al. | A fast thermal-curing nanoimprint resist based on cationic polymerizable epoxysiloxane | |
| JP6544673B2 (ja) | 光架橋剤による電極印刷用親撥パターン形成方法 | |
| Shin et al. | Nanoimprinting ultrasmall and high-aspect-ratio structures by using rubber-toughened UV cured epoxy resist | |
| TW200818260A (en) | Method of preparing a patterned film with a developing solvent | |
| JP5292785B2 (ja) | フラーレン誘導体、並びにその溶液及びその膜 |