TWI435800B - An etching mask, a substrate having an etching mask, a method of manufacturing a fine processed product and a fine processed product - Google Patents

An etching mask, a substrate having an etching mask, a method of manufacturing a fine processed product and a fine processed product Download PDF

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Publication number
TWI435800B
TWI435800B TW097143003A TW97143003A TWI435800B TW I435800 B TWI435800 B TW I435800B TW 097143003 A TW097143003 A TW 097143003A TW 97143003 A TW97143003 A TW 97143003A TW I435800 B TWI435800 B TW I435800B
Authority
TW
Taiwan
Prior art keywords
etching mask
substrate
resin
film
etching
Prior art date
Application number
TW097143003A
Other languages
English (en)
Chinese (zh)
Other versions
TW200938362A (en
Inventor
高谷佳輝
佐塚拓郎
林田能久
楠浦崇央
米卓阿努潘
Original Assignee
丸善石油化學股份有限公司
Scivax股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 丸善石油化學股份有限公司, Scivax股份有限公司 filed Critical 丸善石油化學股份有限公司
Publication of TW200938362A publication Critical patent/TW200938362A/zh
Application granted granted Critical
Publication of TWI435800B publication Critical patent/TWI435800B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L45/00—Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D145/00—Coating compositions based on homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic system; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/269—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension including synthetic resin or polymer layer or component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Theoretical Computer Science (AREA)
  • Structural Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
TW097143003A 2007-11-14 2008-11-07 An etching mask, a substrate having an etching mask, a method of manufacturing a fine processed product and a fine processed product TWI435800B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007295452A JP5470528B2 (ja) 2007-11-14 2007-11-14 エッチングマスク、エッチングマスク付き基材、微細加工品および微細加工品の製造方法

Publications (2)

Publication Number Publication Date
TW200938362A TW200938362A (en) 2009-09-16
TWI435800B true TWI435800B (zh) 2014-05-01

Family

ID=40638494

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097143003A TWI435800B (zh) 2007-11-14 2008-11-07 An etching mask, a substrate having an etching mask, a method of manufacturing a fine processed product and a fine processed product

Country Status (6)

Country Link
US (1) US8597769B2 (https=)
EP (1) EP2221162A4 (https=)
JP (1) JP5470528B2 (https=)
KR (1) KR101590650B1 (https=)
TW (1) TWI435800B (https=)
WO (1) WO2009063639A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5448589B2 (ja) * 2009-06-12 2014-03-19 富士フイルム株式会社 パターン形成方法
JP2012149151A (ja) * 2011-01-18 2012-08-09 Jsr Corp エッチングマスク用樹脂及びエッチングマスク用コート材並びにサファイア基板のパターン形成方法
JP5767615B2 (ja) * 2011-10-07 2015-08-19 富士フイルム株式会社 インプリント用下層膜組成物およびこれを用いたパターン形成方法
WO2018225707A1 (ja) * 2017-06-09 2018-12-13 三井化学株式会社 微細凹凸パターン付き基板の製造方法、樹脂組成物および積層体
US11802342B2 (en) 2021-10-19 2023-10-31 Tokyo Electron Limited Methods for wet atomic layer etching of ruthenium
US12506011B2 (en) 2023-12-15 2025-12-23 Tokyo Electron Limited Methods for wet atomic layer etching of transition metal oxide dielectric materials

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
KR100682169B1 (ko) * 1999-07-30 2007-02-12 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
JP4780262B2 (ja) * 2000-04-27 2011-09-28 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料及びパターン形成方法
KR100527533B1 (ko) * 2000-06-21 2005-11-09 주식회사 하이닉스반도체 Ｔｉｐｓ 공정용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
JP2002184719A (ja) * 2000-12-19 2002-06-28 Matsushita Electric Ind Co Ltd パターン形成方法
JP2002244296A (ja) * 2001-02-19 2002-08-30 Matsushita Electric Ind Co Ltd ホールパターンの形成方法
JP3656991B2 (ja) 2001-09-12 2005-06-08 丸善石油化学株式会社 環状オレフィン系共重合体の製造方法
KR101366505B1 (ko) * 2005-06-10 2014-02-24 오브듀캇 아베 고리형 올레핀 공중합체를 포함하는 임프린트 스탬프
KR100969440B1 (ko) * 2005-09-27 2010-07-14 에스씨아이브이에이엑스 가부시키가이샤 열 임프린트용 수지
US20100019410A1 (en) * 2005-12-09 2010-01-28 Scivax Corporation Resin for Thermal Imprinting
JP2007192875A (ja) * 2006-01-17 2007-08-02 Tokyo Ohka Kogyo Co Ltd 下層膜形成用材料、積層体およびパターン形成方法
WO2007111215A1 (ja) * 2006-03-27 2007-10-04 Pioneer Corporation パターン転写用モールド

Also Published As

Publication number Publication date
JP5470528B2 (ja) 2014-04-16
EP2221162A4 (en) 2011-12-28
JP2009119694A (ja) 2009-06-04
KR101590650B1 (ko) 2016-02-01
EP2221162A1 (en) 2010-08-25
TW200938362A (en) 2009-09-16
KR20100105585A (ko) 2010-09-29
US8597769B2 (en) 2013-12-03
US20100310830A1 (en) 2010-12-09
WO2009063639A1 (ja) 2009-05-22

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