JP2009076841A - 非晶質シリコン及びナノ結晶質シリコンの複合薄膜を利用した太陽電池及びその製造方法 - Google Patents
非晶質シリコン及びナノ結晶質シリコンの複合薄膜を利用した太陽電池及びその製造方法 Download PDFInfo
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- solar cell
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- 239000010409 thin film Substances 0.000 title claims abstract description 97
- 239000002131 composite material Substances 0.000 title claims abstract description 61
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
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Classifications
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
- H01L31/03845—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material comprising semiconductor nanoparticles embedded in a semiconductor matrix
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Abstract
【解決手段】本発明の太陽電池は、液体シリコン前駆体に結晶質シリコンナノ粒子を分散し、基板103上に塗布又は印刷した後、熱処理して液体シリコン前駆体を非晶質シリコン104に変形させて形成する。
【選択図】図4
Description
まず、太陽電池の第1製造方法は、1対の電極間に、不純物の濃度及び(又は)種類の異なる半導体層を少なくとも2層以上積層した構造を有する太陽電池を製造するとき、この半導体薄膜中の1層以上を、本発明によって作製した複合薄膜によって形成することを特徴とする。
太陽電池の第2製造方法においては、本発明の互いに異なる種類の複合薄膜が使用される。
102:結晶質シリコンナノ粒子
103、500:基板
501:透明伝導性酸化物層
502:p型非晶質/ナノ結晶質シリコン半導体層
503:i型非晶質/ナノ結晶質シリコン半導体層
504:n型非晶質/ナノ結晶質シリコン半導体層
505:金属電極
Claims (19)
- 1つの層に非晶質シリコンと結晶質シリコンが混合されている複合薄膜を少なくとも1つ以上包含する太陽電池。
- 前記複合薄膜は、
前記非晶質シリコンをマトリックスにして分散された結晶質シリコン粒子を包含することを特徴とする請求項1に記載の太陽電池。 - 背面電極及び前面電極の間に、
非晶質シリコンでなるマトリックス、及び前記マトリックスに分散されている結晶質シリコン粒子を包含する複合薄膜でなる光・電変換層を少なくとも1つ以上包含する太陽電池。 - 前記結晶質シリコン粒子の結晶サイズは、ナノ単位の結晶であることを特徴とする請求項1乃至3のいずれか1項に記載の太陽電池。
- 前記ナノ単位の結晶サイズは、1nm〜500nmであることを特徴とする請求項4に記載の太陽電池。
- 前記非晶質シリコンは、
液体シリコン前駆体から変形されていることを特徴とする請求項1又は3に記載の太陽電池。 - 前記非晶質シリコンは、シラン(SiH4)、ジシラン(Si2H6)、シクロペンタシラン(Si5H10)、シクロヘキサシラン(Si6H12)で構成された群から選択されるいずれか1つ以上の物質から変形されていることを特徴とする請求項1又は3に記載の太陽電池。
- 前記複合薄膜は、残存分散剤を0〜10%さらに包含することを特徴とする請求項1又は3に記載の太陽電池。
- 液体シリコン前駆体10〜90重量%及び前記液体シリコン前駆体に分散されている結晶質シリコン10〜90重量%を包含する太陽電池用複合薄膜の組成物。
- 前記液体シリコン前駆体は、シラン(SiH4)、ジシラン(Si2H6)、シクロペンタシラン(Si5H10)、シクロヘキサシラン(Si6H12)で構成された群から選択されるいずれか1つ以上の物質であることを特徴とする請求項9に記載の太陽電池用複合薄膜の組成物。
- 残存分散剤を0〜10%さらに包含することを特徴とする請求項9に記載の太陽電池用複合薄膜の組成物。
- 前記結晶質シリコンは、粒子のサイズが1nm〜500nmであるナノ結晶シリコンであることを特徴とする請求項9に記載の太陽電池用複合薄膜の組成物。
- 液体シリコン前駆体と結晶質シリコンを混合する工程と、
前記混合物を基板又は電極層上に塗布又は印刷する工程と、
前記液体シリコン前駆体を非晶質シリコンマトリックスに形成するために熱処理する工程を包含する太陽電池の製造方法。 - 前記結晶質シリコンは、粒子の結晶サイズが1nm〜500nmのナノ結晶シリコンであることを特徴とする請求項13に記載の太陽電池の製造方法。
- 前記液体シリコン前駆体は、シラン(SiH4)、ジシラン(Si2H6)、シクロペンタシラン(Si5H10)、シクロヘキサシラン(Si6H12)で構成された群から選択されるいずれか1つ以上の物質であることを特徴とする請求項13に記載の太陽電池の製造方法。
- 前記熱処理工程の以後に、非晶質シリコンと結晶質シリコンの界面における欠陥の発生を制御するためにパッシベーション工程をさらに包含することを特徴とする請求項13に記載の太陽電池の製造方法。
- 前記パッシベーション工程に利用されるガスは、酸素ガス、酸素を含むオゾンガス、酸素プラズマガス、前記3つのガスの混合ガス、水素ガス、フッ素化水素、臭素化水素、リン化水素で構成された群から選択されるいずれか1つ以上のガスであることを特徴とする請求項16に記載の太陽電池の製造方法。
- 前記混合物は、分散剤又は界面活性剤をさらに包含することを特徴とする請求項13に記載の太陽電池の製造方法。
- 前記熱処理工程における温度は、300℃〜500℃であることを特徴とする請求項13に記載の太陽電池の製造方法。
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JP2010067801A (ja) * | 2008-09-11 | 2010-03-25 | Seiko Epson Corp | 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法 |
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JP2017085146A (ja) * | 2010-04-06 | 2017-05-18 | シン フィルム エレクトロニクス エーエスエー | エピタキシャル構造、その形成方法、および、それを含むデバイス |
JP2012009479A (ja) * | 2010-06-22 | 2012-01-12 | Konica Minolta Holdings Inc | 透明導電性支持体 |
JP2016524046A (ja) * | 2013-06-18 | 2016-08-12 | エボニック デグサ ゲーエムベーハーEvonik Degussa GmbH | 構造化された被覆の製造方法、その方法で製造される構造化された被覆およびその使用 |
JP2017509138A (ja) * | 2013-12-11 | 2017-03-30 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | ヒドリドシランを含む組成物の重合及びそれに次ぐケイ素含有層の製造のためのその重合体の使用のための方法及び装置 |
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