JP2009065146A - 半導体薄膜の形成方法および半導体薄膜の検査装置 - Google Patents

半導体薄膜の形成方法および半導体薄膜の検査装置 Download PDF

Info

Publication number
JP2009065146A
JP2009065146A JP2008208818A JP2008208818A JP2009065146A JP 2009065146 A JP2009065146 A JP 2009065146A JP 2008208818 A JP2008208818 A JP 2008208818A JP 2008208818 A JP2008208818 A JP 2008208818A JP 2009065146 A JP2009065146 A JP 2009065146A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
crystalline semiconductor
forming
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2008208818A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009065146A5 (enExample
Inventor
Hirohisa Amako
博久 尼子
Nobuhiko Umetsu
暢彦 梅津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2008208818A priority Critical patent/JP2009065146A/ja
Publication of JP2009065146A publication Critical patent/JP2009065146A/ja
Priority to US12/537,299 priority patent/US8404498B2/en
Priority to CN2009101613844A priority patent/CN101651093B/zh
Publication of JP2009065146A5 publication Critical patent/JP2009065146A5/ja
Abandoned legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP2008208818A 2007-08-15 2008-08-14 半導体薄膜の形成方法および半導体薄膜の検査装置 Abandoned JP2009065146A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008208818A JP2009065146A (ja) 2007-08-15 2008-08-14 半導体薄膜の形成方法および半導体薄膜の検査装置
US12/537,299 US8404498B2 (en) 2007-08-15 2009-08-07 Method of inspecting semiconductor thin film by transmission imaging and inspection device for the same
CN2009101613844A CN101651093B (zh) 2007-08-15 2009-08-12 半导体薄膜形成方法和半导体薄膜检查装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007211734 2007-08-15
JP2008208818A JP2009065146A (ja) 2007-08-15 2008-08-14 半導体薄膜の形成方法および半導体薄膜の検査装置

Publications (2)

Publication Number Publication Date
JP2009065146A true JP2009065146A (ja) 2009-03-26
JP2009065146A5 JP2009065146A5 (enExample) 2011-08-04

Family

ID=40559412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008208818A Abandoned JP2009065146A (ja) 2007-08-15 2008-08-14 半導体薄膜の形成方法および半導体薄膜の検査装置

Country Status (3)

Country Link
US (1) US8404498B2 (enExample)
JP (1) JP2009065146A (enExample)
CN (1) CN101651093B (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160127768A (ko) * 2014-03-03 2016-11-04 코히런트 레이저시스템즈 게엠바하 운트 컴파니 카게 엑시머 레이저 어닐링 제어를 위한 모니터링 방법 및 장치
KR20170031810A (ko) * 2015-09-11 2017-03-22 삼성디스플레이 주식회사 결정화도 측정 장치 및 그 측정 방법
WO2018037756A1 (ja) * 2016-08-24 2018-03-01 株式会社日本製鋼所 レーザアニール装置、結晶化膜付き基板の検査方法、及び半導体装置の製造方法
KR20210054635A (ko) * 2019-11-05 2021-05-14 삼성디스플레이 주식회사 검사 방법 및 검사 장치
US11114300B2 (en) 2016-08-24 2021-09-07 The Japan Steel Works, Ltd. Laser annealing apparatus, inspection method of substrate with crystallized film, and manufacturing method of semiconductor device
WO2023013145A1 (ja) * 2021-08-04 2023-02-09 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8441643B2 (en) 2010-07-13 2013-05-14 Apple Inc. Manufacturing and testing techniques for electronic displays
CN102279161B (zh) * 2011-05-12 2012-11-07 广州市光机电技术研究院 一种自动测试分筛系统
JP5453372B2 (ja) * 2011-10-26 2014-03-26 シャープ株式会社 ポリシリコン結晶膜の検査方法および検査装置
KR20140101612A (ko) * 2013-02-12 2014-08-20 삼성디스플레이 주식회사 결정화 검사장치 및 결정화 검사방법
KR20140114542A (ko) * 2013-03-18 2014-09-29 삼성디스플레이 주식회사 레이저빔 어닐링 장치 및 그 제어방법
CN114746183A (zh) * 2019-12-04 2022-07-12 核酸有限公司 用于精细液滴操纵的基于薄膜晶体管的数字微流体装置上的可变电极大小区域阵列

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05107032A (ja) * 1991-10-16 1993-04-27 Matsushita Electric Ind Co Ltd 実装基板外観検査方法
US5861952A (en) * 1992-11-16 1999-01-19 Canon Kabushiki Kaisha Optical inspection method and apparatus including intensity modulation of a light beam and detection of light scattered at an inspection position
US6005965A (en) * 1997-04-07 1999-12-21 Komatsu Ltd. Inspection apparatus for semiconductor packages
JP2001082925A (ja) * 1999-09-14 2001-03-30 Sony Corp 紫外光の焦点位置制御機構及び方法、並びに、検査装置及び方法
US7139083B2 (en) * 2000-09-20 2006-11-21 Kla-Tencor Technologies Corp. Methods and systems for determining a composition and a thickness of a specimen
JP4715016B2 (ja) * 2001-02-15 2011-07-06 ソニー株式会社 ポリシリコン膜の評価方法
EP1329946A3 (en) * 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
US6977775B2 (en) * 2002-05-17 2005-12-20 Sharp Kabushiki Kaisha Method and apparatus for crystallizing semiconductor with laser beams
JP4668508B2 (ja) 2002-05-17 2011-04-13 シャープ株式会社 半導体結晶化方法
US6781687B2 (en) * 2002-09-26 2004-08-24 Orbotech Ltd. Illumination and image acquisition system
JP4772261B2 (ja) 2002-10-31 2011-09-14 シャープ株式会社 表示装置の基板の製造方法及び結晶化装置
JP2004342875A (ja) 2003-05-16 2004-12-02 Fuji Photo Film Co Ltd レーザアニール装置
TW200503057A (en) * 2003-06-11 2005-01-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, method of manufacturing thin film transistor, thin film transistor, and display apparatus
TWI254792B (en) * 2003-07-01 2006-05-11 Au Optronics Corp Detecting method and device of laser crystalline silicon
JP4247081B2 (ja) 2003-09-24 2009-04-02 三菱電機株式会社 レーザアニール装置のレーザビーム強度モニタ方法とレーザアニール装置
JP3867724B2 (ja) * 2004-02-27 2007-01-10 オムロン株式会社 表面状態検査方法およびその方法を用いた表面状態検査装置ならびに基板検査装置
JP4826750B2 (ja) * 2005-04-08 2011-11-30 オムロン株式会社 欠陥検査方法およびその方法を用いた欠陥検査装置
JP2006349522A (ja) * 2005-06-16 2006-12-28 Fujifilm Holdings Corp 固体撮像素子の検査方法及びその装置
JP4855745B2 (ja) * 2005-09-27 2012-01-18 株式会社 日立ディスプレイズ 表示装置の製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160127768A (ko) * 2014-03-03 2016-11-04 코히런트 레이저시스템즈 게엠바하 운트 컴파니 카게 엑시머 레이저 어닐링 제어를 위한 모니터링 방법 및 장치
JP2017512382A (ja) * 2014-03-03 2017-05-18 コヒーレント レーザーシステムズ ゲーエムベーハー ウント コンパニー カーゲー エキシマレーザアニーリングの制御のための監視方法および装置
KR102154495B1 (ko) 2014-03-03 2020-09-10 코히런트 레이저시스템즈 게엠바하 운트 컴파니 카게 엑시머 레이저 어닐링 제어를 위한 모니터링 방법 및 장치
KR20170031810A (ko) * 2015-09-11 2017-03-22 삼성디스플레이 주식회사 결정화도 측정 장치 및 그 측정 방법
KR102659810B1 (ko) * 2015-09-11 2024-04-23 삼성디스플레이 주식회사 결정화도 측정 장치 및 그 측정 방법
WO2018037756A1 (ja) * 2016-08-24 2018-03-01 株式会社日本製鋼所 レーザアニール装置、結晶化膜付き基板の検査方法、及び半導体装置の製造方法
US11114300B2 (en) 2016-08-24 2021-09-07 The Japan Steel Works, Ltd. Laser annealing apparatus, inspection method of substrate with crystallized film, and manufacturing method of semiconductor device
KR20210054635A (ko) * 2019-11-05 2021-05-14 삼성디스플레이 주식회사 검사 방법 및 검사 장치
KR102863335B1 (ko) * 2019-11-05 2025-09-25 삼성디스플레이 주식회사 표시 장치의 검사 방법 및 검사 장치
WO2023013145A1 (ja) * 2021-08-04 2023-02-09 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法
JP2023023205A (ja) * 2021-08-04 2023-02-16 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法
JP7637595B2 (ja) 2021-08-04 2025-02-28 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法

Also Published As

Publication number Publication date
US20090298208A1 (en) 2009-12-03
US8404498B2 (en) 2013-03-26
CN101651093B (zh) 2012-01-11
CN101651093A (zh) 2010-02-17

Similar Documents

Publication Publication Date Title
JP2009065146A (ja) 半導体薄膜の形成方法および半導体薄膜の検査装置
CN101587840B (zh) 形成半导体薄膜的方法及半导体薄膜检查装置
US7405141B2 (en) Processing method, processing apparatus, crystallization method and crystallization apparatus using pulsed laser beam
JP6378974B2 (ja) レーザアニール装置及びレーザアニール方法
US6673639B2 (en) Method and system for evaluating polysilicon, and method and system for fabricating thin film transistor
JP2009065146A5 (enExample)
JP2001110861A (ja) 半導体膜の検査方法、薄膜トランジスタの製造方法、および半導体膜の検査装置
US12491582B2 (en) Laser processing device and laser light monitoring method
JP2002043383A (ja) 薄膜トランジスタ製造システム及び方法、ポリシリコン評価方法及びポリシリコン検査装置
CN111052311A (zh) 结晶化监视方法、激光退火装置、及激光退火方法
JP2006300811A (ja) 薄膜の膜厚測定方法、多結晶半導体薄膜の形成方法、半導体デバイスの製造方法、およびその製造装置、並びに画像表示装置の製造方法
JP2011066084A (ja) 半導体薄膜の形成方法、半導体薄膜の検査装置および半導体薄膜
CN101800168B (zh) 形成半导体薄膜的方法和半导体薄膜检测装置
US9194815B2 (en) Apparatus and method for inspecting crystallization
US20200321363A1 (en) Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display
US9976969B1 (en) Monitoring method and apparatus for excimer-laser annealing process
CN115602577A (zh) 激光照射装置、激光照射方法和可读取地记录有程序的记录介质
JP2004063504A (ja) 結晶膜の検査方法および検査装置
JP2012160590A (ja) 有機ｅｌ表示装置用シリコン膜検査方法及び有機ｅｌ表示装置用シリコン膜検査装置
JP2005003566A (ja) 結晶膜の検査方法および検査装置
JP2005072313A (ja) 結晶膜の検査方法および検査装置
JP2001196593A (ja) 薄膜トランジスタ製造方法
JP2014063942A (ja) 多結晶シリコン膜の検査方法及びその装置
JP2001196592A (ja) 薄膜トランジスタ製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110615

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110615

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20130416