JP2009065146A5 - - Google Patents
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- Publication number
- JP2009065146A5 JP2009065146A5 JP2008208818A JP2008208818A JP2009065146A5 JP 2009065146 A5 JP2009065146 A5 JP 2009065146A5 JP 2008208818 A JP2008208818 A JP 2008208818A JP 2008208818 A JP2008208818 A JP 2008208818A JP 2009065146 A5 JP2009065146 A5 JP 2009065146A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- crystalline semiconductor
- forming
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 claims 60
- 239000010409 thin film Substances 0.000 claims 60
- 238000000034 method Methods 0.000 claims 18
- 230000005540 biological transmission Effects 0.000 claims 9
- 238000007689 inspection Methods 0.000 claims 9
- 230000002950 deficient Effects 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 238000002425 crystallisation Methods 0.000 claims 4
- 230000008025 crystallization Effects 0.000 claims 4
- 238000003384 imaging method Methods 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 230000006378 damage Effects 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 238000012216 screening Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008208818A JP2009065146A (ja) | 2007-08-15 | 2008-08-14 | 半導体薄膜の形成方法および半導体薄膜の検査装置 |
| US12/537,299 US8404498B2 (en) | 2007-08-15 | 2009-08-07 | Method of inspecting semiconductor thin film by transmission imaging and inspection device for the same |
| CN2009101613844A CN101651093B (zh) | 2007-08-15 | 2009-08-12 | 半导体薄膜形成方法和半导体薄膜检查装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007211734 | 2007-08-15 | ||
| JP2008208818A JP2009065146A (ja) | 2007-08-15 | 2008-08-14 | 半導体薄膜の形成方法および半導体薄膜の検査装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009065146A JP2009065146A (ja) | 2009-03-26 |
| JP2009065146A5 true JP2009065146A5 (enExample) | 2011-08-04 |
Family
ID=40559412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008208818A Abandoned JP2009065146A (ja) | 2007-08-15 | 2008-08-14 | 半導体薄膜の形成方法および半導体薄膜の検査装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8404498B2 (enExample) |
| JP (1) | JP2009065146A (enExample) |
| CN (1) | CN101651093B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8441643B2 (en) | 2010-07-13 | 2013-05-14 | Apple Inc. | Manufacturing and testing techniques for electronic displays |
| CN102279161B (zh) * | 2011-05-12 | 2012-11-07 | 广州市光机电技术研究院 | 一种自动测试分筛系统 |
| JP5453372B2 (ja) * | 2011-10-26 | 2014-03-26 | シャープ株式会社 | ポリシリコン結晶膜の検査方法および検査装置 |
| KR20140101612A (ko) * | 2013-02-12 | 2014-08-20 | 삼성디스플레이 주식회사 | 결정화 검사장치 및 결정화 검사방법 |
| KR20140114542A (ko) * | 2013-03-18 | 2014-09-29 | 삼성디스플레이 주식회사 | 레이저빔 어닐링 장치 및 그 제어방법 |
| US9335276B2 (en) * | 2014-03-03 | 2016-05-10 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for control of excimer laser annealing |
| KR102659810B1 (ko) * | 2015-09-11 | 2024-04-23 | 삼성디스플레이 주식회사 | 결정화도 측정 장치 및 그 측정 방법 |
| WO2018037756A1 (ja) * | 2016-08-24 | 2018-03-01 | 株式会社日本製鋼所 | レーザアニール装置、結晶化膜付き基板の検査方法、及び半導体装置の製造方法 |
| JP2018037646A (ja) | 2016-08-24 | 2018-03-08 | 株式会社日本製鋼所 | レーザアニール装置、結晶化膜付き基板の検査方法、及び半導体装置の製造方法 |
| KR102863335B1 (ko) * | 2019-11-05 | 2025-09-25 | 삼성디스플레이 주식회사 | 표시 장치의 검사 방법 및 검사 장치 |
| CN114746183A (zh) * | 2019-12-04 | 2022-07-12 | 核酸有限公司 | 用于精细液滴操纵的基于薄膜晶体管的数字微流体装置上的可变电极大小区域阵列 |
| JP7637595B2 (ja) * | 2021-08-04 | 2025-02-28 | Ｊｓｗアクティナシステム株式会社 | レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05107032A (ja) * | 1991-10-16 | 1993-04-27 | Matsushita Electric Ind Co Ltd | 実装基板外観検査方法 |
| US5861952A (en) * | 1992-11-16 | 1999-01-19 | Canon Kabushiki Kaisha | Optical inspection method and apparatus including intensity modulation of a light beam and detection of light scattered at an inspection position |
| US6005965A (en) * | 1997-04-07 | 1999-12-21 | Komatsu Ltd. | Inspection apparatus for semiconductor packages |
| JP2001082925A (ja) * | 1999-09-14 | 2001-03-30 | Sony Corp | 紫外光の焦点位置制御機構及び方法、並びに、検査装置及び方法 |
| US7139083B2 (en) * | 2000-09-20 | 2006-11-21 | Kla-Tencor Technologies Corp. | Methods and systems for determining a composition and a thickness of a specimen |
| JP4715016B2 (ja) * | 2001-02-15 | 2011-07-06 | ソニー株式会社 | ポリシリコン膜の評価方法 |
| EP1329946A3 (en) * | 2001-12-11 | 2005-04-06 | Sel Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including a laser crystallization step |
| US6977775B2 (en) * | 2002-05-17 | 2005-12-20 | Sharp Kabushiki Kaisha | Method and apparatus for crystallizing semiconductor with laser beams |
| JP4668508B2 (ja) | 2002-05-17 | 2011-04-13 | シャープ株式会社 | 半導体結晶化方法 |
| US6781687B2 (en) * | 2002-09-26 | 2004-08-24 | Orbotech Ltd. | Illumination and image acquisition system |
| JP4772261B2 (ja) | 2002-10-31 | 2011-09-14 | シャープ株式会社 | 表示装置の基板の製造方法及び結晶化装置 |
| JP2004342875A (ja) | 2003-05-16 | 2004-12-02 | Fuji Photo Film Co Ltd | レーザアニール装置 |
| TW200503057A (en) * | 2003-06-11 | 2005-01-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, method of manufacturing thin film transistor, thin film transistor, and display apparatus |
| TWI254792B (en) * | 2003-07-01 | 2006-05-11 | Au Optronics Corp | Detecting method and device of laser crystalline silicon |
| JP4247081B2 (ja) | 2003-09-24 | 2009-04-02 | 三菱電機株式会社 | レーザアニール装置のレーザビーム強度モニタ方法とレーザアニール装置 |
| JP3867724B2 (ja) * | 2004-02-27 | 2007-01-10 | オムロン株式会社 | 表面状態検査方法およびその方法を用いた表面状態検査装置ならびに基板検査装置 |
| JP4826750B2 (ja) * | 2005-04-08 | 2011-11-30 | オムロン株式会社 | 欠陥検査方法およびその方法を用いた欠陥検査装置 |
| JP2006349522A (ja) * | 2005-06-16 | 2006-12-28 | Fujifilm Holdings Corp | 固体撮像素子の検査方法及びその装置 |
| JP4855745B2 (ja) * | 2005-09-27 | 2012-01-18 | 株式会社 日立ディスプレイズ | 表示装置の製造方法 |
-
2008
- 2008-08-14 JP JP2008208818A patent/JP2009065146A/ja not_active Abandoned
-
2009
- 2009-08-07 US US12/537,299 patent/US8404498B2/en not_active Expired - Fee Related
- 2009-08-12 CN CN2009101613844A patent/CN101651093B/zh not_active Expired - Fee Related
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