CN101651093B - 半导体薄膜形成方法和半导体薄膜检查装置 - Google Patents

半导体薄膜形成方法和半导体薄膜检查装置 Download PDF

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Publication number
CN101651093B
CN101651093B CN2009101613844A CN200910161384A CN101651093B CN 101651093 B CN101651093 B CN 101651093B CN 2009101613844 A CN2009101613844 A CN 2009101613844A CN 200910161384 A CN200910161384 A CN 200910161384A CN 101651093 B CN101651093 B CN 101651093B
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thin film
semiconductor thin
crystalline semiconductor
transmission image
film
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CN101651093A (zh
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尼子博久
梅津畅彦
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Sony Corp
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Sony Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
CN2009101613844A 2007-08-15 2009-08-12 半导体薄膜形成方法和半导体薄膜检查装置 Expired - Fee Related CN101651093B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007211734 2007-08-15
JP2008208818 2008-08-14
JP2008208818A JP2009065146A (ja) 2007-08-15 2008-08-14 半導体薄膜の形成方法および半導体薄膜の検査装置
JP2008-208818 2008-08-14

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CN101651093A CN101651093A (zh) 2010-02-17
CN101651093B true CN101651093B (zh) 2012-01-11

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US (1) US8404498B2 (enExample)
JP (1) JP2009065146A (enExample)
CN (1) CN101651093B (enExample)

Cited By (1)

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CN109643647A (zh) * 2016-08-24 2019-04-16 株式会社日本制钢所 激光退火装置、带晶化膜基底的检查方法及半导体器件制造方法

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US8441643B2 (en) 2010-07-13 2013-05-14 Apple Inc. Manufacturing and testing techniques for electronic displays
CN102279161B (zh) * 2011-05-12 2012-11-07 广州市光机电技术研究院 一种自动测试分筛系统
JP5453372B2 (ja) * 2011-10-26 2014-03-26 シャープ株式会社 ポリシリコン結晶膜の検査方法および検査装置
KR20140101612A (ko) * 2013-02-12 2014-08-20 삼성디스플레이 주식회사 결정화 검사장치 및 결정화 검사방법
KR20140114542A (ko) * 2013-03-18 2014-09-29 삼성디스플레이 주식회사 레이저빔 어닐링 장치 및 그 제어방법
US9335276B2 (en) * 2014-03-03 2016-05-10 Coherent Lasersystems Gmbh & Co. Kg Monitoring method and apparatus for control of excimer laser annealing
KR102659810B1 (ko) * 2015-09-11 2024-04-23 삼성디스플레이 주식회사 결정화도 측정 장치 및 그 측정 방법
WO2018037756A1 (ja) * 2016-08-24 2018-03-01 株式会社日本製鋼所 レーザアニール装置、結晶化膜付き基板の検査方法、及び半導体装置の製造方法
KR102863335B1 (ko) * 2019-11-05 2025-09-25 삼성디스플레이 주식회사 표시 장치의 검사 방법 및 검사 장치
CN114746183A (zh) * 2019-12-04 2022-07-12 核酸有限公司 用于精细液滴操纵的基于薄膜晶体管的数字微流体装置上的可变电极大小区域阵列
JP7637595B2 (ja) * 2021-08-04 2025-02-28 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、プログラム、及び学習モデルの生成方法

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Cited By (2)

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CN109643647A (zh) * 2016-08-24 2019-04-16 株式会社日本制钢所 激光退火装置、带晶化膜基底的检查方法及半导体器件制造方法
CN109643647B (zh) * 2016-08-24 2023-09-01 Jsw阿克迪纳系统有限公司 激光退火装置、带晶化膜基底的检查方法及半导体器件制造方法

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US20090298208A1 (en) 2009-12-03
JP2009065146A (ja) 2009-03-26
US8404498B2 (en) 2013-03-26
CN101651093A (zh) 2010-02-17

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