JP2009054900A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2009054900A JP2009054900A JP2007221967A JP2007221967A JP2009054900A JP 2009054900 A JP2009054900 A JP 2009054900A JP 2007221967 A JP2007221967 A JP 2007221967A JP 2007221967 A JP2007221967 A JP 2007221967A JP 2009054900 A JP2009054900 A JP 2009054900A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- contact plug
- film
- semiconductor device
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 230000007547 defect Effects 0.000 abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 42
- 229910021332 silicide Inorganic materials 0.000 description 39
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 39
- 239000000758 substrate Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000008859 change Effects 0.000 description 14
- 238000005259 measurement Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 238000009826 distribution Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000002955 isolation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】本願発明は、ゲート電極間に設けられるコンタクトプラグを含む半導体装置であって、前記ゲート電極下のチャネル領域を含み、かつチャネル長方向に平行な断面において前記コンタクトプラグを設けずに前記断面から垂直方向に外れて延設されたソース・ドレイン領域に、前記コンタクトプラグを設ける。
【選択図】図8
Description
3、4、5、7、15、19 32、40 コンタクトプラグ
6、10、12 シリサイド電極
14、18 タングステン膜
8 スパイク
11、16、20、21 シリコン基板
22 ゲート絶縁膜
23 ポリシリコン層
24 シリサイド層
25 ゲート電極
26 サイドウォール
27 ソース
28 ドレイン
29、41 シリサイド電極
30 エッチングストッパ膜
31 層間絶縁膜
32、40 コンタクトプラグ
33 素子分離
34 チャネル領域
35 延設されたドレイン領域
36、37 シリサイド電極端
38、39 コンタクトプラグ端
42、44 導電層
43、45 バリアメタル層
Claims (3)
- ゲート電極間に設けられるコンタクトプラグを含む半導体装置であって、
前記ゲート電極下のチャネル領域を含み、かつチャネル長方向に平行な断面において前記コンタクトプラグを設けずに前記断面から垂直方向に外れて延設されたソース・ドレイン領域に、前記コンタクトプラグを設けることを特徴とする半導体装置。 - ゲート電極間に設けられるコンタクトプラグを含む半導体装置であって、
前記ゲート電極端と前記コンタクトプラグ端との距離が、所定値以上であることを特徴とする半導体装置。 - 請求項2に記載の半導体装置において、
前記ゲート電極端と前記コンタクトプラグ端との距離の最小値が、50nmであることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007221967A JP5369406B2 (ja) | 2007-08-29 | 2007-08-29 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007221967A JP5369406B2 (ja) | 2007-08-29 | 2007-08-29 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009054900A true JP2009054900A (ja) | 2009-03-12 |
JP5369406B2 JP5369406B2 (ja) | 2013-12-18 |
Family
ID=40505694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007221967A Expired - Fee Related JP5369406B2 (ja) | 2007-08-29 | 2007-08-29 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5369406B2 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1012568A (ja) * | 1996-06-24 | 1998-01-16 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2000307078A (ja) * | 1999-04-20 | 2000-11-02 | Nec Corp | 半導体装置およびその製造方法 |
JP2007123784A (ja) * | 2005-10-31 | 2007-05-17 | Toshiba Corp | 半導体装置 |
-
2007
- 2007-08-29 JP JP2007221967A patent/JP5369406B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1012568A (ja) * | 1996-06-24 | 1998-01-16 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2000307078A (ja) * | 1999-04-20 | 2000-11-02 | Nec Corp | 半導体装置およびその製造方法 |
JP2007123784A (ja) * | 2005-10-31 | 2007-05-17 | Toshiba Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5369406B2 (ja) | 2013-12-18 |
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