JP2009051005A5 - - Google Patents

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Publication number
JP2009051005A5
JP2009051005A5 JP2008253517A JP2008253517A JP2009051005A5 JP 2009051005 A5 JP2009051005 A5 JP 2009051005A5 JP 2008253517 A JP2008253517 A JP 2008253517A JP 2008253517 A JP2008253517 A JP 2008253517A JP 2009051005 A5 JP2009051005 A5 JP 2009051005A5
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JP
Japan
Prior art keywords
semiconductor
electrode
semiconductor substrate
insulating film
mems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008253517A
Other languages
English (en)
Japanese (ja)
Other versions
JP5332463B2 (ja
JP2009051005A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008253517A priority Critical patent/JP5332463B2/ja
Priority claimed from JP2008253517A external-priority patent/JP5332463B2/ja
Publication of JP2009051005A publication Critical patent/JP2009051005A/ja
Publication of JP2009051005A5 publication Critical patent/JP2009051005A5/ja
Application granted granted Critical
Publication of JP5332463B2 publication Critical patent/JP5332463B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008253517A 2008-09-30 2008-09-30 Ｍｅｍｓ・半導体複合素子 Expired - Fee Related JP5332463B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008253517A JP5332463B2 (ja) 2008-09-30 2008-09-30 Ｍｅｍｓ・半導体複合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008253517A JP5332463B2 (ja) 2008-09-30 2008-09-30 Ｍｅｍｓ・半導体複合素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2006292189A Division JP5145688B2 (ja) 2006-10-27 2006-10-27 Ｍｅｍｓ・半導体複合回路の製造方法

Publications (3)

Publication Number Publication Date
JP2009051005A JP2009051005A (ja) 2009-03-12
JP2009051005A5 true JP2009051005A5 (enExample) 2009-12-10
JP5332463B2 JP5332463B2 (ja) 2013-11-06

Family

ID=40502540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008253517A Expired - Fee Related JP5332463B2 (ja) 2008-09-30 2008-09-30 Ｍｅｍｓ・半導体複合素子

Country Status (1)

Country Link
JP (1) JP5332463B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130020573A1 (en) * 2010-03-29 2013-01-24 Keiichi Fukuyama Pressure detecting device and method for manufacturing the same, display device and method for manufacturing the same, and tft substrate with pressure detecting device
JP2013030905A (ja) 2011-07-27 2013-02-07 Seiko Epson Corp Ｍｅｍｓ振動子および発振器
JP2014033335A (ja) 2012-08-03 2014-02-20 Seiko Epson Corp Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法
JP6060569B2 (ja) * 2012-09-07 2017-01-18 セイコーエプソン株式会社 電子装置の製造方法
AU2016281656B2 (en) 2015-06-23 2019-05-30 Nobilis Therapeutics, Inc. Therapeutic immune modulation using noble gas compositions
CN111170266B (zh) * 2019-12-31 2023-07-21 杭州士兰集成电路有限公司 半导体器件及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07163158A (ja) * 1993-11-30 1995-06-23 Sony Corp マイクロマシンの製造方法
JP3603347B2 (ja) * 1994-10-12 2004-12-22 株式会社デンソー 半導体センサの製造方法
JP2006095607A (ja) * 2004-09-28 2006-04-13 Seiko Epson Corp Ｍｅｍｓ素子の製造方法及びｍｅｍｓ素子
JP4724488B2 (ja) * 2005-02-25 2011-07-13 日立オートモティブシステムズ株式会社 集積化マイクロエレクトロメカニカルシステム

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