JP2009038274A - 圧電素子およびその製造方法、アクチュエータ、並びに、液体噴射ヘッド - Google Patents
圧電素子およびその製造方法、アクチュエータ、並びに、液体噴射ヘッド Download PDFInfo
- Publication number
- JP2009038274A JP2009038274A JP2007202680A JP2007202680A JP2009038274A JP 2009038274 A JP2009038274 A JP 2009038274A JP 2007202680 A JP2007202680 A JP 2007202680A JP 2007202680 A JP2007202680 A JP 2007202680A JP 2009038274 A JP2009038274 A JP 2009038274A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- piezoelectric
- piezoelectric element
- titanium layer
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000007788 liquid Substances 0.000 title claims abstract description 24
- 239000010936 titanium Substances 0.000 claims abstract description 94
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 93
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000000059 patterning Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 description 162
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 25
- 239000000463 material Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- 241000877463 Lanio Species 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical compound [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910003446 platinum oxide Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007202680A JP2009038274A (ja) | 2007-08-03 | 2007-08-03 | 圧電素子およびその製造方法、アクチュエータ、並びに、液体噴射ヘッド |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007202680A JP2009038274A (ja) | 2007-08-03 | 2007-08-03 | 圧電素子およびその製造方法、アクチュエータ、並びに、液体噴射ヘッド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009038274A true JP2009038274A (ja) | 2009-02-19 |
| JP2009038274A5 JP2009038274A5 (enExample) | 2010-08-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007202680A Withdrawn JP2009038274A (ja) | 2007-08-03 | 2007-08-03 | 圧電素子およびその製造方法、アクチュエータ、並びに、液体噴射ヘッド |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009038274A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012121273A (ja) * | 2010-12-09 | 2012-06-28 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
| WO2025071476A1 (en) * | 2023-09-26 | 2025-04-03 | Agency For Science, Technology And Research | Stacked arrangement, micro-electromechanical device and methods of forming the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002314163A (ja) * | 2001-02-09 | 2002-10-25 | Seiko Epson Corp | 圧電体薄膜素子の製造方法、これを用いたインクジェットヘッド |
| JP2003298736A (ja) * | 2002-03-29 | 2003-10-17 | Tamura Electric Works Ltd | 電話装置管理システム、サーバ装置、電話装置及びプログラム |
| JP2005295786A (ja) * | 2004-03-11 | 2005-10-20 | Seiko Epson Corp | アクチュエータ装置の製造方法及び液体噴射装置 |
| JP2006245248A (ja) * | 2005-03-02 | 2006-09-14 | Seiko Epson Corp | 圧電素子及びその製造方法、液体噴射ヘッド及びその製造方法並びに液体噴射装置 |
| JP2007173605A (ja) * | 2005-12-22 | 2007-07-05 | Seiko Epson Corp | 圧電素子の製造方法及び液体噴射ヘッドの製造方法 |
-
2007
- 2007-08-03 JP JP2007202680A patent/JP2009038274A/ja not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002314163A (ja) * | 2001-02-09 | 2002-10-25 | Seiko Epson Corp | 圧電体薄膜素子の製造方法、これを用いたインクジェットヘッド |
| JP2003298736A (ja) * | 2002-03-29 | 2003-10-17 | Tamura Electric Works Ltd | 電話装置管理システム、サーバ装置、電話装置及びプログラム |
| JP2005295786A (ja) * | 2004-03-11 | 2005-10-20 | Seiko Epson Corp | アクチュエータ装置の製造方法及び液体噴射装置 |
| JP2006245248A (ja) * | 2005-03-02 | 2006-09-14 | Seiko Epson Corp | 圧電素子及びその製造方法、液体噴射ヘッド及びその製造方法並びに液体噴射装置 |
| JP2007173605A (ja) * | 2005-12-22 | 2007-07-05 | Seiko Epson Corp | 圧電素子の製造方法及び液体噴射ヘッドの製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012121273A (ja) * | 2010-12-09 | 2012-06-28 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
| WO2025071476A1 (en) * | 2023-09-26 | 2025-04-03 | Agency For Science, Technology And Research | Stacked arrangement, micro-electromechanical device and methods of forming the same |
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