JP2009037910A5 - - Google Patents

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Publication number
JP2009037910A5
JP2009037910A5 JP2007201905A JP2007201905A JP2009037910A5 JP 2009037910 A5 JP2009037910 A5 JP 2009037910A5 JP 2007201905 A JP2007201905 A JP 2007201905A JP 2007201905 A JP2007201905 A JP 2007201905A JP 2009037910 A5 JP2009037910 A5 JP 2009037910A5
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JP
Japan
Prior art keywords
sample
ion
charged particle
irradiation system
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007201905A
Other languages
English (en)
Japanese (ja)
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JP2009037910A (ja
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Publication date
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Priority to JP2007201905A priority Critical patent/JP2009037910A/ja
Priority claimed from JP2007201905A external-priority patent/JP2009037910A/ja
Publication of JP2009037910A publication Critical patent/JP2009037910A/ja
Publication of JP2009037910A5 publication Critical patent/JP2009037910A5/ja
Pending legal-status Critical Current

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JP2007201905A 2007-08-02 2007-08-02 複合荷電粒子ビーム装置及び加工観察方法 Pending JP2009037910A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007201905A JP2009037910A (ja) 2007-08-02 2007-08-02 複合荷電粒子ビーム装置及び加工観察方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007201905A JP2009037910A (ja) 2007-08-02 2007-08-02 複合荷電粒子ビーム装置及び加工観察方法

Publications (2)

Publication Number Publication Date
JP2009037910A JP2009037910A (ja) 2009-02-19
JP2009037910A5 true JP2009037910A5 (fr) 2010-07-08

Family

ID=40439628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007201905A Pending JP2009037910A (ja) 2007-08-02 2007-08-02 複合荷電粒子ビーム装置及び加工観察方法

Country Status (1)

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JP (1) JP2009037910A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5432028B2 (ja) * 2010-03-29 2014-03-05 株式会社日立ハイテクサイエンス 集束イオンビーム装置、チップ先端構造検査方法及びチップ先端構造再生方法
JP5448971B2 (ja) * 2010-03-29 2014-03-19 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、チップ再生方法、及び試料観察方法
JP2011222426A (ja) * 2010-04-13 2011-11-04 Sii Nanotechnology Inc 複合荷電粒子ビーム装置
KR101161956B1 (ko) * 2010-05-03 2012-07-04 삼성전기주식회사 화학성분 분석 방법 및 화학성분 분석 장치
DE102010024625A1 (de) * 2010-06-22 2011-12-22 Carl Zeiss Nts Gmbh Verfahren zum Bearbeiten eines Objekts

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164135A (ja) * 1982-03-25 1983-09-29 Agency Of Ind Science & Technol 収束イオンビ−ムを用いた半導体加工装置
JP2810370B2 (ja) * 1988-01-12 1998-10-15 株式会社 日立製作所 集束イオンビーム加工方法
JPH0254851A (ja) * 1988-08-17 1990-02-23 Fujitsu Ltd 電界電離型ガスイオン源の制御方法
JP3119959B2 (ja) * 1993-02-05 2000-12-25 セイコーインスツルメンツ株式会社 集束イオンビーム装置および加工観察装置
JP3564717B2 (ja) * 1993-03-10 2004-09-15 株式会社日立製作所 集束イオンビーム発生手段を用いた処理方法及びその装置
JPH0721955A (ja) * 1993-06-29 1995-01-24 Jeol Ltd イオンビーム装置
JP4178741B2 (ja) * 2000-11-02 2008-11-12 株式会社日立製作所 荷電粒子線装置および試料作製装置
JP2004087174A (ja) * 2002-08-23 2004-03-18 Seiko Instruments Inc イオンビーム装置およびイオンビーム加工方法

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