JP2009037910A - 複合荷電粒子ビーム装置及び加工観察方法 - Google Patents

複合荷電粒子ビーム装置及び加工観察方法 Download PDF

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Publication number
JP2009037910A
JP2009037910A JP2007201905A JP2007201905A JP2009037910A JP 2009037910 A JP2009037910 A JP 2009037910A JP 2007201905 A JP2007201905 A JP 2007201905A JP 2007201905 A JP2007201905 A JP 2007201905A JP 2009037910 A JP2009037910 A JP 2009037910A
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Japan
Prior art keywords
sample
ion beam
ion
charged particle
irradiation system
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JP2007201905A
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English (en)
Japanese (ja)
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JP2009037910A5 (fr
Inventor
Takashi Minafuji
孝 皆藤
Takashi Ogawa
貴志 小川
Kenichi Nishinaka
健一 西中
Junichi Tashiro
純一 田代
Yasuhiko Sugiyama
安彦 杉山
Kazuo Aida
和男 相田
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Hitachi High Tech Science Corp
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SII NanoTechnology Inc
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Priority to JP2007201905A priority Critical patent/JP2009037910A/ja
Publication of JP2009037910A publication Critical patent/JP2009037910A/ja
Publication of JP2009037910A5 publication Critical patent/JP2009037910A5/ja
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JP2007201905A 2007-08-02 2007-08-02 複合荷電粒子ビーム装置及び加工観察方法 Pending JP2009037910A (ja)

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JP2009037910A true JP2009037910A (ja) 2009-02-19
JP2009037910A5 JP2009037910A5 (fr) 2010-07-08

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011210494A (ja) * 2010-03-29 2011-10-20 Sii Nanotechnology Inc 集束イオンビーム装置、チップ先端構造検査方法及びチップ先端構造再生方法
JP2011210493A (ja) * 2010-03-29 2011-10-20 Sii Nanotechnology Inc 荷電粒子ビーム装置、チップ再生方法、及び試料観察方法
JP2011222426A (ja) * 2010-04-13 2011-11-04 Sii Nanotechnology Inc 複合荷電粒子ビーム装置
JP2012009437A (ja) * 2010-06-22 2012-01-12 Carl Zeiss Nts Gmbh 物体加工方法
KR101161956B1 (ko) * 2010-05-03 2012-07-04 삼성전기주식회사 화학성분 분석 방법 및 화학성분 분석 장치
CN113163564A (zh) * 2021-04-30 2021-07-23 中国科学院电工研究所 一种具有静电消除功能的电子束加工装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164135A (ja) * 1982-03-25 1983-09-29 Agency Of Ind Science & Technol 収束イオンビ−ムを用いた半導体加工装置
JPH01181529A (ja) * 1988-01-12 1989-07-19 Hitachi Ltd 集束イオンビーム加工方法とその装置
JPH0254851A (ja) * 1988-08-17 1990-02-23 Fujitsu Ltd 電界電離型ガスイオン源の制御方法
JPH06231720A (ja) * 1993-02-05 1994-08-19 Seiko Instr Inc 集束荷電ビーム装置および加工観察方法
JPH0721955A (ja) * 1993-06-29 1995-01-24 Jeol Ltd イオンビーム装置
JPH07320670A (ja) * 1993-03-10 1995-12-08 Hitachi Ltd 集束イオンビーム発生手段を用いた処理方法及びその装置
JP2002150990A (ja) * 2000-11-02 2002-05-24 Hitachi Ltd 微小試料加工観察方法及び装置
JP2004087174A (ja) * 2002-08-23 2004-03-18 Seiko Instruments Inc イオンビーム装置およびイオンビーム加工方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164135A (ja) * 1982-03-25 1983-09-29 Agency Of Ind Science & Technol 収束イオンビ−ムを用いた半導体加工装置
JPH01181529A (ja) * 1988-01-12 1989-07-19 Hitachi Ltd 集束イオンビーム加工方法とその装置
JPH0254851A (ja) * 1988-08-17 1990-02-23 Fujitsu Ltd 電界電離型ガスイオン源の制御方法
JPH06231720A (ja) * 1993-02-05 1994-08-19 Seiko Instr Inc 集束荷電ビーム装置および加工観察方法
JPH07320670A (ja) * 1993-03-10 1995-12-08 Hitachi Ltd 集束イオンビーム発生手段を用いた処理方法及びその装置
JPH0721955A (ja) * 1993-06-29 1995-01-24 Jeol Ltd イオンビーム装置
JP2002150990A (ja) * 2000-11-02 2002-05-24 Hitachi Ltd 微小試料加工観察方法及び装置
JP2004087174A (ja) * 2002-08-23 2004-03-18 Seiko Instruments Inc イオンビーム装置およびイオンビーム加工方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011210494A (ja) * 2010-03-29 2011-10-20 Sii Nanotechnology Inc 集束イオンビーム装置、チップ先端構造検査方法及びチップ先端構造再生方法
JP2011210493A (ja) * 2010-03-29 2011-10-20 Sii Nanotechnology Inc 荷電粒子ビーム装置、チップ再生方法、及び試料観察方法
JP2011222426A (ja) * 2010-04-13 2011-11-04 Sii Nanotechnology Inc 複合荷電粒子ビーム装置
KR101161956B1 (ko) * 2010-05-03 2012-07-04 삼성전기주식회사 화학성분 분석 방법 및 화학성분 분석 장치
JP2012009437A (ja) * 2010-06-22 2012-01-12 Carl Zeiss Nts Gmbh 物体加工方法
CN113163564A (zh) * 2021-04-30 2021-07-23 中国科学院电工研究所 一种具有静电消除功能的电子束加工装置
CN113163564B (zh) * 2021-04-30 2024-06-04 中国科学院电工研究所 一种具有静电消除功能的电子束加工装置

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