JP2009037910A5 - - Google Patents

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Publication number
JP2009037910A5
JP2009037910A5 JP2007201905A JP2007201905A JP2009037910A5 JP 2009037910 A5 JP2009037910 A5 JP 2009037910A5 JP 2007201905 A JP2007201905 A JP 2007201905A JP 2007201905 A JP2007201905 A JP 2007201905A JP 2009037910 A5 JP2009037910 A5 JP 2009037910A5
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Japan
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sample
ion
charged particle
irradiation system
ion beam
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JP2007201905A
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JP2009037910A (en
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Priority to JP2007201905A priority Critical patent/JP2009037910A/en
Priority claimed from JP2007201905A external-priority patent/JP2009037910A/en
Publication of JP2009037910A publication Critical patent/JP2009037910A/en
Publication of JP2009037910A5 publication Critical patent/JP2009037910A5/ja
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Claims (10)

ガスフィールドイオン源を備えたイオンビーム照射系と、その照射軸が前記イオンビーム照射系の照射軸に対し９０度又は９０度よりも狭い角度に配置された電子ビーム照射系と、
前記イオンビーム照射系から射出されるイオンビームと前記電子ビーム照射系から射出される電子ビームとの交差位置で試料を支持する試料台と、
前記試料上のビーム照射位置にデポジション用又はエッチング用の機能ガスを供給するガス銃と、
を備えていることを特徴とする複合荷電粒子ビーム装置。 An ion beam irradiation system including a gas field ion source, and an electron beam irradiation system whose irradiation axis is disposed at an angle of 90 degrees or narrower than 90 degrees with respect to the irradiation axis of the ion beam irradiation system;
A sample stage for supporting the sample at the intersection of the ion beam emitted from the ion beam irradiation system and the electron beam emitted from the electron beam irradiation system;
A gas gun for supplying a functional gas for deposition or etching to a beam irradiation position on the sample;
A composite charged particle beam apparatus comprising: 前記イオンビーム照射系が前記試料台の鉛直方向の上方に配置される一方、前記電子ビーム照射系が鉛直方向に対して傾斜して配置されていることを特徴とする請求項１に記載の複合荷電粒子ビーム装置。   2. The composite according to claim 1, wherein the ion beam irradiation system is disposed above a vertical direction of the sample stage, and the electron beam irradiation system is disposed to be inclined with respect to the vertical direction. Charged particle beam device. 前記ガスフィールドイオン源が、エミッタと、前記エミッタの先端部に対向する開口部を有する引出電極と、前記イオンとなるガスを供給するガス供給部とを備えていることを特徴とする請求項１又は請求項２に記載の複合荷電粒子ビーム装置。   2. The gas field ion source includes an emitter, an extraction electrode having an opening facing a tip portion of the emitter, and a gas supply unit that supplies a gas to be the ion. Or the composite charged particle beam apparatus of Claim 2. 前記イオンが、ヘリウムイオンであることを特徴とする請求項１から請求項３のいずれか１項に記載の複合荷電粒子ビーム装置。   The composite charged particle beam apparatus according to any one of claims 1 to 3, wherein the ions are helium ions. 前記イオンが、ヘリウムよりも質量の大きいイオンであることを特徴とする請求項１から請求項３のいずれか１項に記載の複合荷電粒子ビーム装置。The composite charged particle beam apparatus according to any one of claims 1 to 3, wherein the ions are ions having a mass larger than that of helium. 前記イオンビーム又は前記電子ビームの照射によって試料から発生する二次荷電粒子と前記試料を透過した荷電粒子の少なくとも一方を検出する検出装置と、前記検出装置の出力に基づいて前記試料の画像を表示する画像表示装置とを備えていることを特徴とする請求項１から請求項５のいずれか１項に記載の複合荷電粒子ビーム装置。 A detection device for detecting at least one of secondary charged particles generated from the sample by irradiation of the ion beam or the electron beam and charged particles transmitted through the sample, and displaying an image of the sample based on the output of the detection device The composite charged particle beam apparatus according to claim 1, further comprising: 前記検出装置が、電子検出器、イオン検出器、及び透過荷電粒子検出器の少なくとも１つを備えていることを特徴とする請求項６に記載の複合荷電粒子ビーム装置。 The composite charged particle beam device according to claim 6 , wherein the detection device includes at least one of an electron detector, an ion detector, and a transmission charged particle detector. ガスフィールドイオン源を備えたイオンビーム照射系から試料に対してイオンビームを照射するとともに前記試料のイオンビーム照射位置にガスを供給することで前記試料を加工するステップと、
前記試料に電子ビームを照射して前記試料を観察するステップと
を有することを特徴とする加工観察方法。 Irradiating the sample with an ion beam from an ion beam irradiation system including a gas field ion source and processing the sample by supplying a gas to an ion beam irradiation position of the sample;
And observing the sample by irradiating the sample with an electron beam. 試料に対して前記イオンビーム照射系からヘリウムよりも大きい質量のイオンのイオンビームを照射することで前記試料を加工するステップと、  Processing the sample by irradiating the sample with an ion beam of ions having a mass larger than helium from the ion beam irradiation system;
前記試料に電子ビームを照射して前記試料を観察するステップと  Irradiating the sample with an electron beam and observing the sample;
を有することを特徴とする加工観察方法。  The processing observation method characterized by having. 前記電子ビームを、前記イオンビームと鋭角又は概略９０度で交差する方向から前記試料に照射することを特徴とする請求項７又は請求項８に記載の加工観察方法。 9. The processing observation method according to claim 7, wherein the sample is irradiated with the electron beam from a direction that intersects the ion beam at an acute angle or approximately 90 degrees.
JP2007201905A 2007-08-02 2007-08-02 Composite charged particle beam device, and process observation method Pending JP2009037910A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007201905A JP2009037910A (en) 2007-08-02 2007-08-02 Composite charged particle beam device, and process observation method

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Application Number Priority Date Filing Date Title
JP2007201905A JP2009037910A (en) 2007-08-02 2007-08-02 Composite charged particle beam device, and process observation method

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JP2009037910A JP2009037910A (en) 2009-02-19
JP2009037910A5 true JP2009037910A5 (en) 2010-07-08

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JP5448971B2 (en) * 2010-03-29 2014-03-19 株式会社日立ハイテクサイエンス Charged particle beam apparatus, chip regeneration method, and sample observation method
JP5432028B2 (en) * 2010-03-29 2014-03-05 株式会社日立ハイテクサイエンス Focused ion beam device, tip end structure inspection method, and tip end structure regeneration method
JP2011222426A (en) * 2010-04-13 2011-11-04 Sii Nanotechnology Inc Composite charged particle beam device
KR101161956B1 (en) * 2010-05-03 2012-07-04 삼성전기주식회사 Methods of chemical analysis and apparatus for chemical analysis
DE102010024625A1 (en) * 2010-06-22 2011-12-22 Carl Zeiss Nts Gmbh Method for editing an object
CN113163564B (en) * 2021-04-30 2024-06-04 中国科学院电工研究所 Electron beam processing device with static electricity eliminating function

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JPS58164135A (en) * 1982-03-25 1983-09-29 Agency Of Ind Science & Technol Semiconductor processing device using convergent ion beam
JP2810370B2 (en) * 1988-01-12 1998-10-15 株式会社 日立製作所 Focused ion beam processing method
JPH0254851A (en) * 1988-08-17 1990-02-23 Fujitsu Ltd Control method of electric field ionization type gas ion source
JP3119959B2 (en) * 1993-02-05 2000-12-25 セイコーインスツルメンツ株式会社 Focused ion beam device and processing observation device
JP3564717B2 (en) * 1993-03-10 2004-09-15 株式会社日立製作所 Processing method and apparatus using focused ion beam generating means
JPH0721955A (en) * 1993-06-29 1995-01-24 Jeol Ltd Ion beam device
JP4178741B2 (en) * 2000-11-02 2008-11-12 株式会社日立製作所 Charged particle beam apparatus and sample preparation apparatus
JP2004087174A (en) * 2002-08-23 2004-03-18 Seiko Instruments Inc Ion beam device, and working method of the same

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