JP2009033124A - 半導体基板及び半導体基板の作製方法、半導体装置、電子機器 - Google Patents
半導体基板及び半導体基板の作製方法、半導体装置、電子機器 Download PDFInfo
- Publication number
- JP2009033124A JP2009033124A JP2008161876A JP2008161876A JP2009033124A JP 2009033124 A JP2009033124 A JP 2009033124A JP 2008161876 A JP2008161876 A JP 2008161876A JP 2008161876 A JP2008161876 A JP 2008161876A JP 2009033124 A JP2009033124 A JP 2009033124A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- layer
- crystal semiconductor
- semiconductor substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 315
- 239000000758 substrate Substances 0.000 title claims abstract description 265
- 238000000034 method Methods 0.000 title claims description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000013078 crystal Substances 0.000 claims abstract description 193
- 238000009832 plasma treatment Methods 0.000 claims abstract description 46
- 238000010438 heat treatment Methods 0.000 claims description 46
- 239000007789 gas Substances 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 29
- 239000001257 hydrogen Substances 0.000 claims description 28
- 229910052739 hydrogen Inorganic materials 0.000 claims description 28
- 239000012298 atmosphere Substances 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 238000005229 chemical vapour deposition Methods 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 150000002431 hydrogen Chemical class 0.000 claims description 9
- 150000001282 organosilanes Chemical class 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 6
- 150000003376 silicon Chemical class 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 20
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 387
- 239000010408 film Substances 0.000 description 117
- 239000012535 impurity Substances 0.000 description 93
- 150000002500 ions Chemical class 0.000 description 33
- 239000011521 glass Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 26
- 229910052814 silicon oxide Inorganic materials 0.000 description 25
- -1 hydrogen ions Chemical class 0.000 description 24
- 239000011241 protective layer Substances 0.000 description 20
- 239000010409 thin film Substances 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 238000005530 etching Methods 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000000926 separation method Methods 0.000 description 10
- 229920001940 conductive polymer Polymers 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000007726 management method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000002841 Lewis acid Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000005407 aluminoborosilicate glass Substances 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001678 elastic recoil detection analysis Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 150000007517 lewis acids Chemical class 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- RNVCVTLRINQCPJ-UHFFFAOYSA-N o-toluidine Chemical compound CC1=CC=CC=C1N RNVCVTLRINQCPJ-UHFFFAOYSA-N 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229920001709 polysilazane Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000003303 reheating Methods 0.000 description 2
- 239000010979 ruby Substances 0.000 description 2
- 229910001750 ruby Inorganic materials 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZPOROQKDAPEMOL-UHFFFAOYSA-N 1h-pyrrol-3-ol Chemical compound OC=1C=CNC=1 ZPOROQKDAPEMOL-UHFFFAOYSA-N 0.000 description 1
- UCDCWSBXWOGCKR-UHFFFAOYSA-N 2-(2-methylpropyl)aniline Chemical compound CC(C)CC1=CC=CC=C1N UCDCWSBXWOGCKR-UHFFFAOYSA-N 0.000 description 1
- RUUWTSREEUTULQ-UHFFFAOYSA-N 2-octylaniline Chemical compound CCCCCCCCC1=CC=CC=C1N RUUWTSREEUTULQ-UHFFFAOYSA-N 0.000 description 1
- LGPVKMIWERPYIJ-UHFFFAOYSA-N 3,4-dibutyl-1h-pyrrole Chemical compound CCCCC1=CNC=C1CCCC LGPVKMIWERPYIJ-UHFFFAOYSA-N 0.000 description 1
- OJFOWGWQOFZNNJ-UHFFFAOYSA-N 3,4-dimethyl-1h-pyrrole Chemical compound CC1=CNC=C1C OJFOWGWQOFZNNJ-UHFFFAOYSA-N 0.000 description 1
- JSOMPMRZESLPSM-UHFFFAOYSA-N 3-(2-methylpropyl)aniline Chemical compound CC(C)CC1=CC=CC(N)=C1 JSOMPMRZESLPSM-UHFFFAOYSA-N 0.000 description 1
- ZAJAQTYSTDTMCU-UHFFFAOYSA-N 3-aminobenzenesulfonic acid Chemical compound NC1=CC=CC(S(O)(=O)=O)=C1 ZAJAQTYSTDTMCU-UHFFFAOYSA-N 0.000 description 1
- ATWNFFKGYPYZPJ-UHFFFAOYSA-N 3-butyl-1h-pyrrole Chemical compound CCCCC=1C=CNC=1 ATWNFFKGYPYZPJ-UHFFFAOYSA-N 0.000 description 1
- KPOCSQCZXMATFR-UHFFFAOYSA-N 3-butylthiophene Chemical compound CCCCC=1C=CSC=1 KPOCSQCZXMATFR-UHFFFAOYSA-N 0.000 description 1
- FFRZVVFLHHGORC-UHFFFAOYSA-N 3-decyl-1h-pyrrole Chemical compound CCCCCCCCCCC=1C=CNC=1 FFRZVVFLHHGORC-UHFFFAOYSA-N 0.000 description 1
- JAYBIBLZTQMCAY-UHFFFAOYSA-N 3-decylthiophene Chemical compound CCCCCCCCCCC=1C=CSC=1 JAYBIBLZTQMCAY-UHFFFAOYSA-N 0.000 description 1
- RFKWIEFTBMACPZ-UHFFFAOYSA-N 3-dodecylthiophene Chemical compound CCCCCCCCCCCCC=1C=CSC=1 RFKWIEFTBMACPZ-UHFFFAOYSA-N 0.000 description 1
- KEAYXGHOGPUYPB-UHFFFAOYSA-N 3-ethoxy-1h-pyrrole Chemical compound CCOC=1C=CNC=1 KEAYXGHOGPUYPB-UHFFFAOYSA-N 0.000 description 1
- OTODBDQJLMYYKQ-UHFFFAOYSA-N 3-methoxy-1h-pyrrole Chemical compound COC=1C=CNC=1 OTODBDQJLMYYKQ-UHFFFAOYSA-N 0.000 description 1
- FEKWWZCCJDUWLY-UHFFFAOYSA-N 3-methyl-1h-pyrrole Chemical compound CC=1C=CNC=1 FEKWWZCCJDUWLY-UHFFFAOYSA-N 0.000 description 1
- YIRWZHZOCIDDAH-UHFFFAOYSA-N 3-octoxy-1h-pyrrole Chemical compound CCCCCCCCOC=1C=CNC=1 YIRWZHZOCIDDAH-UHFFFAOYSA-N 0.000 description 1
- AUVZKIJQGLYISA-UHFFFAOYSA-N 3-octoxythiophene Chemical compound CCCCCCCCOC=1C=CSC=1 AUVZKIJQGLYISA-UHFFFAOYSA-N 0.000 description 1
- WFHVTZRAIPYMMO-UHFFFAOYSA-N 3-octyl-1h-pyrrole Chemical compound CCCCCCCCC=1C=CNC=1 WFHVTZRAIPYMMO-UHFFFAOYSA-N 0.000 description 1
- PRPLKAUMELMCKP-UHFFFAOYSA-N 4-methyl-1h-pyrrol-3-ol Chemical compound CC1=CNC=C1O PRPLKAUMELMCKP-UHFFFAOYSA-N 0.000 description 1
- FXPOCCDGHHTZAO-UHFFFAOYSA-N 4-methyl-1h-pyrrole-3-carboxylic acid Chemical compound CC1=CNC=C1C(O)=O FXPOCCDGHHTZAO-UHFFFAOYSA-N 0.000 description 1
- LRFIHWGUGBXFEC-UHFFFAOYSA-N 4-methylthiophene-3-carboxylic acid Chemical compound CC1=CSC=C1C(O)=O LRFIHWGUGBXFEC-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910021630 Antimony pentafluoride Inorganic materials 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- PFJFNQUFMTYCHB-UHFFFAOYSA-N C[SiH2]N[SiH3] Chemical compound C[SiH2]N[SiH3] PFJFNQUFMTYCHB-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- QZRGKCOWNLSUDK-UHFFFAOYSA-N Iodochlorine Chemical compound ICl QZRGKCOWNLSUDK-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229920000571 Nylon 11 Polymers 0.000 description 1
- 229920000299 Nylon 12 Polymers 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920000280 Poly(3-octylthiophene) Polymers 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- VBVBHWZYQGJZLR-UHFFFAOYSA-I antimony pentafluoride Chemical compound F[Sb](F)(F)(F)F VBVBHWZYQGJZLR-UHFFFAOYSA-I 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- CBEQRNSPHCCXSH-UHFFFAOYSA-N iodine monobromide Chemical compound IBr CBEQRNSPHCCXSH-UHFFFAOYSA-N 0.000 description 1
- PDJAZCSYYQODQF-UHFFFAOYSA-N iodine monofluoride Chemical compound IF PDJAZCSYYQODQF-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- YWXLYZIZWVOMML-UHFFFAOYSA-N oxirane-2,2,3,3-tetracarbonitrile Chemical compound N#CC1(C#N)OC1(C#N)C#N YWXLYZIZWVOMML-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- OBCUTHMOOONNBS-UHFFFAOYSA-N phosphorus pentafluoride Chemical compound FP(F)(F)(F)F OBCUTHMOOONNBS-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002849 poly(3-ethoxythiophene) polymer Polymers 0.000 description 1
- 229920002850 poly(3-methoxythiophene) polymer Polymers 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- DOYOPBSXEIZLRE-UHFFFAOYSA-N pyrrole-3-carboxylic acid Chemical compound OC(=O)C=1C=CNC=1 DOYOPBSXEIZLRE-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- NLDYACGHTUPAQU-UHFFFAOYSA-N tetracyanoethylene Chemical group N#CC(C#N)=C(C#N)C#N NLDYACGHTUPAQU-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- YNVOMSDITJMNET-UHFFFAOYSA-N thiophene-3-carboxylic acid Chemical compound OC(=O)C=1C=CSC=1 YNVOMSDITJMNET-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Element Separation (AREA)
Abstract
【解決手段】単結晶半導体基板の表面から所定の深さに損傷領域を形成し、単結晶半導体基板の表面をプラズマ処理し、プラズマ処理された単結晶半導体基板の表面に、絶縁層を形成し、絶縁層を介して、単結晶半導体基板を、絶縁表面を有する基板に貼り合わせ、単結晶半導体基板を、損傷領域で分離して、絶縁表面を有する基板上に単結晶半導体層を形成する。これにより、単結晶半導体層と絶縁層との界面における欠陥を低減した半導体基板を提供することができる。
【選択図】図1
Description
本実施の形態では、本発明の半導体基板の製造方法の一例について、図1乃至3を参照して説明する。
本実施の形態では、本発明の半導体基板の製造方法の別の一例について、図4及び5を参照して説明する。なお、本実施の形態においては、実施の形態1にて示した欠陥の修復に加えて、イオン照射時における単結晶半導体層のダメージを低減することが可能な半導体基板の製造方法について説明する。
本実施の形態では、本発明の半導体装置の製造方法の一例について、図6乃至9を参照して説明する。なお、本実施の形態においては、半導体装置の一例として液晶表示装置を挙げて説明するが、本発明の半導体装置は液晶表示装置に限られるものではない。
本実施の形態では、本発明に係る発光素子を有する半導体装置(エレクトロルミネッセンス表示装置)について説明する。なお、周辺回路領域や画素領域等に用いられるトランジスタの作製方法は、実施の形態3を参照することができるため、詳細については省略する。
本実施の形態では、本発明に係る半導体装置の別の例について、図11及び12を参照して説明する。なお、本実施の形態においては、マイクロプロセッサ及び電子タグを例に挙げて説明するが、本発明の半導体装置はこれらに限られるものではない。
本実施の形態では、本発明の半導体装置、特に表示装置を用いた電子機器について、図13を参照して説明する。
本実施の形態では、本発明の半導体装置、特に無線タグの用途について、図14を参照して説明する。
102 損傷領域
104 単結晶半導体層
106 接合層
110 基板
200 支持台
202 ガス供給部
204 排気口
206 アンテナ
208 誘電体板
210 マイクロ波供給部
212 温度制御部
214 プラズマ
300 バリア層
400 単結晶半導体基板
402 損傷領域
404 単結晶半導体層
406 接合層
410 基板
450 保護層
600 基板
602 バリア層
604 接合層
606 単結晶半導体層
608 ゲート絶縁層
610 単結晶半導体層
612 単結晶半導体層
614 単結晶半導体層
638 チャネル形成領域
652 チャネル形成領域
654 絶縁膜
656 絶縁膜
664 pチャネル型薄膜トランジスタ
666 nチャネル型薄膜トランジスタ
668 nチャネル型薄膜トランジスタ
670 容量配線
672 絶縁膜
674 画素電極層
676 外部端子接続領域
678 封止領域
680 周辺駆動回路領域
690 画素領域
900 対向基板
902 絶縁層
904 液晶層
906 絶縁層
908 導電層
910 着色層
912 偏光子
914 シール材
916 スペーサ
918 偏光子
920 端子電極層
922 異方性導電体層
924 FPC
1000 素子基板
1002 絶縁膜
1030 外部端子接続領域
1032 封止領域
1034 駆動回路領域
1036 画素領域
1050 薄膜トランジスタ
1052 薄膜トランジスタ
1054 薄膜トランジスタ
1056 薄膜トランジスタ
1060 発光素子
1062 電極層
1064 発光層
1066 電極層
1068 絶縁層
1070 充填材
1072 シール材
1074 配線層
1076 端子電極層
1078 異方性導電層
1080 FPC
1090 封止基板
1100 マイクロプロセッサ
1101 演算回路
1102 演算回路制御部
1103 命令解析部
1104 制御部
1105 タイミング制御部
1106 レジスタ
1107 レジスタ制御部
1108 バスインターフェース
1109 読み出し専用メモリ
1110 メモリインターフェース
1200 無線タグ
1201 アナログ回路部
1202 デジタル回路部
1203 共振回路
1204 整流回路
1205 定電圧回路
1206 リセット回路
1207 発振回路
1208 復調回路
1209 変調回路
1210 RFインターフェース
1211 制御レジスタ
1212 クロックコントローラ
1213 インターフェース
1214 中央処理装置
1215 ランダムアクセスメモリ
1216 読み出し専用メモリ
1217 アンテナ
1218 容量部
1219 電源管理回路
1301 筺体
1302 支持台
1303 表示部
1304 スピーカー部
1305 ビデオ入力端子
1311 本体
1312 表示部
1313 受像部
1314 操作キー
1315 外部接続ポート
1316 シャッターボタン
1321 本体
1322 筐体
1323 表示部
1324 キーボード
1325 外部接続ポート
1326 ポインティングデバイス
1331 本体
1332 表示部
1333 スイッチ
1334 操作キー
1335 赤外線ポート
1341 本体
1342 筐体
1343 表示部A
1344 表示部B
1345 部
1346 操作キー
1347 スピーカー部
1351 本体
1352 表示部
1353 操作キー
1361 本体
1362 表示部
1363 筐体
1364 外部接続ポート
1365 リモコン受信部
1366 受像部
1367 バッテリー
1368 音声入力部
1369 操作キー
1371 本体
1372 筐体
1373 表示部
1374 音声入力部
1375 音声出力部
1376 操作キー
1377 外部接続ポート
1378 アンテナ
1500 単結晶シリコン基板
1502 酸化窒化シリコン膜
1504 損傷領域
1506 単結晶シリコン層
1508 酸化窒化シリコン膜
1510 窒化酸化シリコン膜
1512 酸化シリコン膜
1514 ガラス基板
616a マスク
616b マスク
616c マスク
616d マスク
616e マスク
618a ゲート電極層
618b ゲート電極層
618c ゲート電極層
618d ゲート電極層
618e 導電層
620a 導電層
620b 導電層
620c 導電層
620d 導電層
620e 導電層
622a ゲート電極層
622b ゲート電極層
622c ゲート電極層
622d ゲート電極層
622e 導電層
624a ゲート電極層
624b ゲート電極層
624c ゲート電極層
624d ゲート電極層
624e 導電層
626a n型不純物領域
626b n型不純物領域
628a n型不純物領域
628b n型不純物領域
630a n型不純物領域
630b n型不純物領域
630c n型不純物領域
632a マスク
632b マスク
632c マスク
634a n型不純物領域
634b n型不純物領域
636a n型不純物領域
636b n型不純物領域
640a n型不純物領域
640b n型不純物領域
640c n型不純物領域
642a n型不純物領域
642b n型不純物領域
642c n型不純物領域
642d n型不純物領域
644a チャネル形成領域
644b チャネル形成領域
646a マスク
646b マスク
648a p型不純物領域
648b p型不純物領域
650a p型不純物領域
650b p型不純物領域
658a ドレイン電極層
658b ドレイン電極層
660a ドレイン電極層
660b ドレイン電極層
662a ドレイン電極層
662b ドレイン電極層
Claims (14)
- 単結晶半導体基板の表面から所定の深さに損傷領域を形成し、
前記単結晶半導体基板の表面をプラズマ処理し、
前記プラズマ処理された単結晶半導体基板の表面に、絶縁層を形成し、
前記絶縁層を介して、前記単結晶半導体基板と絶縁表面を有する基板を貼り合わせ、
前記単結晶半導体基板に対して加熱処理を施すことで、前記単結晶半導体基板を前記損傷領域で分離して、前記絶縁表面を有する基板上に単結晶半導体層を形成することを特徴とする半導体基板の作製方法。 - 単結晶半導体基板の表面から所定の深さに損傷領域を形成し、
前記単結晶半導体基板の表面をプラズマ処理し、
絶縁表面を有する基板上に絶縁層を形成し、
前記絶縁層を介して、前記単結晶半導体基板と前記絶縁表面を有する基板を貼り合わせ、
前記単結晶半導体基板に対して加熱処理を施すことで、前記単結晶半導体基板を前記損傷領域で分離して、前記絶縁表面を有する基板上に単結晶半導体層を形成することを特徴とする半導体基板の作製方法。 - 請求項1又は2において、
前記絶縁層は、有機シランガスを用いた化学気相成長法により形成されることを特徴とする半導体基板の作製方法。 - 単結晶半導体基板の表面から所定の深さに損傷領域を形成し、
前記単結晶半導体基板の表面をプラズマ処理し、
前記プラズマ処理された単結晶半導体基板の表面に、第1の絶縁層を形成し、
前記第1の絶縁層に接して第2の絶縁層を形成し、
前記第2の絶縁層を介して、前記単結晶半導体基板及び前記第1の絶縁層と絶縁表面を有する基板を貼り合わせ、
前記単結晶半導体基板に対して加熱処理を施すことで、前記単結晶半導体基板を前記損傷領域で分離して、前記絶縁表面を有する基板上に単結晶半導体層を形成することを特徴とする半導体基板の作製方法。 - 単結晶半導体基板の表面から所定の深さに損傷領域を形成し、
前記単結晶半導体基板の表面をプラズマ処理し、
前記プラズマ処理された単結晶半導体基板の表面に、第1の絶縁層を形成し、
絶縁表面を有する基板上に第2の絶縁層を形成し、
前記第2の絶縁層を介して、前記単結晶半導体基板及び前記第1の絶縁層と絶縁表面を有する基板を貼り合わせ、
前記単結晶半導体基板に対して加熱処理を施すことで、前記単結晶半導体基板を前記損傷領域で分離して、前記絶縁表面を有する基板上に単結晶半導体層を形成することを特徴とする半導体基板の作製方法。 - 請求項4又は5において、
前記第1の絶縁層は、積層構造で形成されることを特徴とする半導体基板の作製方法。 - 請求項4乃至6のいずれか一において、
前記第1の絶縁層は、酸化窒化シリコン層と窒化酸化シリコン層の積層構造で形成され、
前記酸化窒化シリコン層は、前記単結晶半導体基板と接するように形成されることを特徴とする半導体基板の作製方法。 - 請求項4乃至7のいずれか一において、
前記第2の絶縁層は、有機シランガスを用いた化学気相成長法により形成されることを特徴とする半導体基板の作製方法。 - 請求項1乃至8のいずれか一において、
前記損傷領域を形成する前に保護膜を形成し、
前記損傷領域を形成した後に前記保護膜を除去することを特徴とする半導体基板の作製方法。 - 請求項1乃至9のいずれか一において、
前記プラズマ処理を、1×1011cm−3以上1×1013cm−3以下の電子密度、且つ0.2eV以上2.0eV以下の電子温度にて行うことを特徴とする半導体基板の作製方法。 - 請求項1乃至10のいずれか一において、
前記プラズマ処理は、水素(H2)雰囲気下、酸素(O2)雰囲気下、又は酸素と水素の混合雰囲気下にて行うことを特徴とする半導体基板の作製方法。 - 請求項1乃至11のいずれか一に記載の方法により作製された半導体基板。
- 請求項12に記載の半導体基板を用いた半導体装置。
- 請求項13に記載の半導体装置を用いた電子機器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008161876A JP2009033124A (ja) | 2007-06-22 | 2008-06-20 | 半導体基板及び半導体基板の作製方法、半導体装置、電子機器 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007165494 | 2007-06-22 | ||
JP2008161876A JP2009033124A (ja) | 2007-06-22 | 2008-06-20 | 半導体基板及び半導体基板の作製方法、半導体装置、電子機器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014104838A Division JP6050279B2 (ja) | 2007-06-22 | 2014-05-21 | 半導体基板の作製方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009033124A true JP2009033124A (ja) | 2009-02-12 |
Family
ID=40136926
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008161876A Withdrawn JP2009033124A (ja) | 2007-06-22 | 2008-06-20 | 半導体基板及び半導体基板の作製方法、半導体装置、電子機器 |
JP2014104838A Active JP6050279B2 (ja) | 2007-06-22 | 2014-05-21 | 半導体基板の作製方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014104838A Active JP6050279B2 (ja) | 2007-06-22 | 2014-05-21 | 半導体基板の作製方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7763502B2 (ja) |
JP (2) | JP2009033124A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102272901A (zh) * | 2009-03-17 | 2011-12-07 | S.O.I.Tec绝缘体上硅技术公司 | 用于制造电子领域中的衬底的修整方法 |
JP2013062499A (ja) * | 2011-08-23 | 2013-04-04 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法 |
JP2014220508A (ja) * | 2014-06-23 | 2014-11-20 | 信越化学工業株式会社 | 貼り合わせ基板の製造方法 |
JP2017038091A (ja) * | 2012-12-07 | 2017-02-16 | 信越化学工業株式会社 | インターポーザー用基板の製造方法 |
KR101812683B1 (ko) * | 2009-10-21 | 2017-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작방법 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8236668B2 (en) * | 2007-10-10 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
JP5464843B2 (ja) * | 2007-12-03 | 2014-04-09 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
FR2926674B1 (fr) * | 2008-01-21 | 2010-03-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure composite avec couche d'oxyde de collage stable |
US8193071B2 (en) * | 2008-03-11 | 2012-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5548395B2 (ja) * | 2008-06-25 | 2014-07-16 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
JP2010114409A (ja) * | 2008-10-10 | 2010-05-20 | Sony Corp | Soi基板とその製造方法、固体撮像装置とその製造方法、および撮像装置 |
JP2011077504A (ja) * | 2009-09-02 | 2011-04-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
KR20170072965A (ko) | 2009-11-13 | 2017-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟 및 그 제조방법, 및 트랜지스터 |
JP5917036B2 (ja) | 2010-08-05 | 2016-05-11 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
US20120045883A1 (en) * | 2010-08-23 | 2012-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate |
US8735263B2 (en) | 2011-01-21 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
US9660092B2 (en) | 2011-08-31 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor including oxygen release layer |
JP5780234B2 (ja) * | 2012-12-14 | 2015-09-16 | 信越半導体株式会社 | Soiウェーハの製造方法 |
FR3007891B1 (fr) * | 2013-06-28 | 2016-11-25 | Soitec Silicon On Insulator | Procede de fabrication d'une structure composite |
US20150187958A1 (en) * | 2013-12-26 | 2015-07-02 | Intermolecular Inc. | IGZO Devices with Reduced Electrode Contact Resistivity and Methods for Forming the Same |
JP6396853B2 (ja) | 2015-06-02 | 2018-09-26 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
JP6454606B2 (ja) | 2015-06-02 | 2019-01-16 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
JP6396852B2 (ja) * | 2015-06-02 | 2018-09-26 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
CN110349843B (zh) * | 2019-07-26 | 2021-12-21 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、生物识别器件、显示装置 |
US20220320039A1 (en) * | 2021-03-31 | 2022-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor packages and method of forming the same |
CN114390424B (zh) * | 2021-09-02 | 2023-10-31 | 苏州清听声学科技有限公司 | 一种定向发声屏绝缘层丝印制作方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03120822A (ja) * | 1989-10-04 | 1991-05-23 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH11163363A (ja) * | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2000331899A (ja) * | 1999-05-21 | 2000-11-30 | Shin Etsu Handotai Co Ltd | Soiウェーハの製造方法およびsoiウェーハ |
JP2002170942A (ja) * | 2000-11-30 | 2002-06-14 | Seiko Epson Corp | Soi基板、素子基板、電気光学装置及び電子機器、並びにsoi基板の製造方法、素子基板の製造方法 |
JP2005072043A (ja) * | 2003-08-26 | 2005-03-17 | Shin Etsu Handotai Co Ltd | 貼り合わせウエーハの製造方法およびsoiウエーハ |
JP2006295037A (ja) * | 2005-04-14 | 2006-10-26 | Shin Etsu Chem Co Ltd | Soiウエーハの製造方法及びsoiウエーハ |
WO2007006803A1 (fr) * | 2005-07-13 | 2007-01-18 | S.O.I.Tec Silicon On Insulator Technologies | Procede de diminution de la rugosite d'une couche epaisse d'isolant |
JP2007058849A (ja) * | 2005-07-29 | 2007-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2007073768A (ja) * | 2005-09-07 | 2007-03-22 | Shin Etsu Handotai Co Ltd | 貼り合わせsoiウェーハの製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JP4103968B2 (ja) * | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
US6534380B1 (en) * | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
US6388652B1 (en) * | 1997-08-20 | 2002-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device |
US6686623B2 (en) * | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
JP2000012864A (ja) * | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US6271101B1 (en) * | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
JP2000077287A (ja) * | 1998-08-26 | 2000-03-14 | Nissin Electric Co Ltd | 結晶薄膜基板の製造方法 |
JP4476390B2 (ja) * | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6255195B1 (en) * | 1999-02-22 | 2001-07-03 | Intersil Corporation | Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method |
JP2000349266A (ja) * | 1999-03-26 | 2000-12-15 | Canon Inc | 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法 |
TW548860B (en) * | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP4289837B2 (ja) * | 2002-07-15 | 2009-07-01 | アプライド マテリアルズ インコーポレイテッド | イオン注入方法及びsoiウエハの製造方法 |
EP1662549B1 (en) | 2003-09-01 | 2015-07-29 | SUMCO Corporation | Method for manufacturing bonded wafer |
TWI372462B (en) * | 2003-10-28 | 2012-09-11 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
FR2892230B1 (fr) * | 2005-10-19 | 2008-07-04 | Soitec Silicon On Insulator | Traitement d'une couche de germamium |
JP2007173354A (ja) | 2005-12-20 | 2007-07-05 | Shin Etsu Chem Co Ltd | Soi基板およびsoi基板の製造方法 |
FR2896619B1 (fr) * | 2006-01-23 | 2008-05-23 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat composite a proprietes electriques ameliorees |
US20070281440A1 (en) * | 2006-05-31 | 2007-12-06 | Jeffrey Scott Cites | Producing SOI structure using ion shower |
KR101447048B1 (ko) * | 2007-04-20 | 2014-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Soi 기판 및 반도체장치의 제조방법 |
EP1986230A2 (en) * | 2007-04-25 | 2008-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing SOI substrate and method of manufacturing semiconductor device |
EP1993128A3 (en) * | 2007-05-17 | 2010-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate |
-
2008
- 2008-06-18 US US12/213,308 patent/US7763502B2/en not_active Expired - Fee Related
- 2008-06-20 JP JP2008161876A patent/JP2009033124A/ja not_active Withdrawn
-
2010
- 2010-07-21 US US12/840,379 patent/US8273611B2/en not_active Expired - Fee Related
-
2014
- 2014-05-21 JP JP2014104838A patent/JP6050279B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03120822A (ja) * | 1989-10-04 | 1991-05-23 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH11163363A (ja) * | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2000331899A (ja) * | 1999-05-21 | 2000-11-30 | Shin Etsu Handotai Co Ltd | Soiウェーハの製造方法およびsoiウェーハ |
JP2002170942A (ja) * | 2000-11-30 | 2002-06-14 | Seiko Epson Corp | Soi基板、素子基板、電気光学装置及び電子機器、並びにsoi基板の製造方法、素子基板の製造方法 |
JP2005072043A (ja) * | 2003-08-26 | 2005-03-17 | Shin Etsu Handotai Co Ltd | 貼り合わせウエーハの製造方法およびsoiウエーハ |
JP2006295037A (ja) * | 2005-04-14 | 2006-10-26 | Shin Etsu Chem Co Ltd | Soiウエーハの製造方法及びsoiウエーハ |
WO2007006803A1 (fr) * | 2005-07-13 | 2007-01-18 | S.O.I.Tec Silicon On Insulator Technologies | Procede de diminution de la rugosite d'une couche epaisse d'isolant |
JP2007058849A (ja) * | 2005-07-29 | 2007-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2007073768A (ja) * | 2005-09-07 | 2007-03-22 | Shin Etsu Handotai Co Ltd | 貼り合わせsoiウェーハの製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102272901A (zh) * | 2009-03-17 | 2011-12-07 | S.O.I.Tec绝缘体上硅技术公司 | 用于制造电子领域中的衬底的修整方法 |
KR101812683B1 (ko) * | 2009-10-21 | 2017-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작방법 |
US10079307B2 (en) | 2009-10-21 | 2018-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method for the same |
JP2013062499A (ja) * | 2011-08-23 | 2013-04-04 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法 |
JP2017038091A (ja) * | 2012-12-07 | 2017-02-16 | 信越化学工業株式会社 | インターポーザー用基板の製造方法 |
JP2014220508A (ja) * | 2014-06-23 | 2014-11-20 | 信越化学工業株式会社 | 貼り合わせ基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6050279B2 (ja) | 2016-12-21 |
JP2014209631A (ja) | 2014-11-06 |
US7763502B2 (en) | 2010-07-27 |
US20080318394A1 (en) | 2008-12-25 |
US20100291753A1 (en) | 2010-11-18 |
US8273611B2 (en) | 2012-09-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6050279B2 (ja) | 半導体基板の作製方法 | |
JP5459987B2 (ja) | 半導体基板及び半導体基板の作製方法、半導体装置、電子機器 | |
US8435871B2 (en) | Method for manufacturing semiconductor device, and semiconductor device and electronic device | |
US7851332B2 (en) | Semiconductor device and method for manufacturing the same | |
US8368082B2 (en) | Method for manufacturing semiconductor device, semiconductor device and electronic appliance | |
US7947570B2 (en) | Manufacturing method and manufacturing apparatus of semiconductor substrate | |
US8211780B2 (en) | Method for manufacturing SOI substrate | |
US8309429B2 (en) | Method for manufacturing semiconductor substrate and semiconductor device | |
US7816232B2 (en) | Method for manufacturing semiconductor substrate and semiconductor substrate manufacturing apparatus | |
US8432021B2 (en) | Manufacturing method of SOI substrate | |
US7816234B2 (en) | Method for manufacturing semiconductor device | |
KR20090037312A (ko) | 반도체 장치의 제작 방법 | |
US8236630B2 (en) | Manufacturing method of semiconductor device, semiconductor device, and electronic device | |
US8278740B2 (en) | Method for manufacturing semiconductor device, semiconductor device, and electronic appliance |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110518 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130425 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130604 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130724 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140304 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20140526 |