JP2009033042A - パターン形成方法及び洗浄装置 - Google Patents
パターン形成方法及び洗浄装置 Download PDFInfo
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- JP2009033042A JP2009033042A JP2007197795A JP2007197795A JP2009033042A JP 2009033042 A JP2009033042 A JP 2009033042A JP 2007197795 A JP2007197795 A JP 2007197795A JP 2007197795 A JP2007197795 A JP 2007197795A JP 2009033042 A JP2009033042 A JP 2009033042A
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- cleaning
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- liquid
- immersion
- resist film
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】基板上にレジスト膜を形成し、洗浄の際に洗浄液と前記基板との界面に作用するせん断応力が、液浸露光の際に液浸液と前記基板との界面に作用するせん断応力よりも大きくなるような制御の下、前記基板の表面を洗浄し、前記レジスト膜を前記液浸露光により露光して、前記レジスト膜に潜像を形成し、前記レジスト膜を現像して、前記基板上にレジスト膜パターンを形成することを特徴とするパターン形成方法。
【選択図】図7
Description
111 被加工膜
121 レジスト膜
131 カバー膜
141 レジスト膜パターン
201 液浸領域
211 液浸露光ステージ
212 液浸補助ステージ
221 露光領域
301 液浸露光装置
311 液浸液
321 液浸露光冶具
331 露光レンズ
401 洗浄装置
411 洗浄液
421 洗浄冶具
422 洗浄液供給部
423 洗浄液排出部
431 洗浄制御部
501 洗浄領域
511 洗浄ステージ
512 洗浄補助ステージ
Claims (5)
- 基板上にレジスト膜を形成し、
洗浄の際に洗浄液と前記基板との界面に作用するせん断応力が、液浸露光の際に液浸液と前記基板との界面に作用するせん断応力よりも大きくなるような制御の下、前記基板の表面を洗浄し、
前記レジスト膜を前記液浸露光により露光して、前記レジスト膜に潜像を形成し、
前記レジスト膜を現像して、前記基板上にレジスト膜パターンを形成することを特徴とするパターン形成方法。 - 前記制御は、
前記洗浄の際に前記基板上に形成される前記洗浄液の層の液厚が、
前記液浸露光の際に前記基板と液浸露光冶具との間に介在する前記液浸液の液厚よりも小さくなるような制御であることを特徴とする請求項1に記載のパターン形成方法。 - 前記制御は、
前記洗浄の際の前記洗浄液と前記基板との相対速度が、
前記液浸露光の際の前記液浸液と前記基板との相対速度よりも大きくなるような制御であることを特徴とする請求項1又は2に記載のパターン形成方法。 - 前記洗浄前に、前記レジスト膜上に塗布膜を形成し、
前記液浸露光後に、前記レジスト膜上の前記塗布膜を除去することを特徴とする請求項1乃至3のいずれか1項に記載のパターン形成方法。 - 基板の表面を洗浄液により洗浄するための洗浄冶具と、
前記洗浄冶具に設けられた、前記洗浄液を供給するための洗浄液供給部と、
前記洗浄冶具に設けられた、前記洗浄液を排出するための洗浄液排出部と、
前記基板と前記洗浄冶具との間に前記洗浄液が介在している状態で前記基板と前記洗浄冶具とを相対移動させることで、前記基板の表面を洗浄する洗浄制御部とを備えることを特徴とする洗浄装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007197795A JP4922858B2 (ja) | 2007-07-30 | 2007-07-30 | パターン形成方法及び洗浄装置 |
TW097125076A TW200919545A (en) | 2007-07-30 | 2008-07-03 | Method of forming pattern, method of manufacturing semiconductor device, and cleaning apparatus |
US12/179,753 US20090035705A1 (en) | 2007-07-30 | 2008-07-25 | Method of forming pattern, method of manufacturing semiconductor device, and cleaning apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007197795A JP4922858B2 (ja) | 2007-07-30 | 2007-07-30 | パターン形成方法及び洗浄装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009033042A true JP2009033042A (ja) | 2009-02-12 |
JP4922858B2 JP4922858B2 (ja) | 2012-04-25 |
Family
ID=40338486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007197795A Expired - Fee Related JP4922858B2 (ja) | 2007-07-30 | 2007-07-30 | パターン形成方法及び洗浄装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090035705A1 (ja) |
JP (1) | JP4922858B2 (ja) |
TW (1) | TW200919545A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150065864A (ko) * | 2012-10-12 | 2015-06-15 | 가부시키가이샤 니콘 | 방진 장치를 구비한 노광 장치 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009188241A (ja) * | 2008-02-07 | 2009-08-20 | Toshiba Corp | 液浸露光装置及び液浸露光方法 |
US20110232677A1 (en) * | 2010-03-29 | 2011-09-29 | Tokyo Electron Limited | Method for cleaning low-k dielectrics |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207711A (ja) * | 2002-12-10 | 2004-07-22 | Nikon Corp | 露光装置及び露光方法、デバイス製造方法 |
JP2005294520A (ja) * | 2004-03-31 | 2005-10-20 | Tokyo Electron Ltd | 塗布・現像装置及び塗布・現像方法 |
JP2005347326A (ja) * | 2004-05-31 | 2005-12-15 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
JP2007158326A (ja) * | 2005-12-02 | 2007-06-21 | Asml Netherlands Bv | 液浸型投影装置の汚染を防止または低減する方法および液浸型リソグラフィ装置 |
JP2007180253A (ja) * | 2005-12-28 | 2007-07-12 | Matsushita Electric Ind Co Ltd | フォトレジストパターン形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130010039A (ko) * | 2002-12-10 | 2013-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP3857692B2 (ja) * | 2004-01-15 | 2006-12-13 | 株式会社東芝 | パターン形成方法 |
JP4220423B2 (ja) * | 2004-03-24 | 2009-02-04 | 株式会社東芝 | レジストパターン形成方法 |
US7362412B2 (en) * | 2004-11-18 | 2008-04-22 | International Business Machines Corporation | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system |
JP4634822B2 (ja) * | 2005-02-24 | 2011-02-16 | 株式会社東芝 | レジストパターン形成方法および半導体装置の製造方法 |
JP2007140075A (ja) * | 2005-11-17 | 2007-06-07 | Matsushita Electric Ind Co Ltd | バリア膜形成用材料及びそれを用いたパターン形成方法 |
JP4316595B2 (ja) * | 2006-09-13 | 2009-08-19 | 株式会社東芝 | 液浸補助板の洗浄方法と液浸露光方法及びパターン形成方法 |
-
2007
- 2007-07-30 JP JP2007197795A patent/JP4922858B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-03 TW TW097125076A patent/TW200919545A/zh unknown
- 2008-07-25 US US12/179,753 patent/US20090035705A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207711A (ja) * | 2002-12-10 | 2004-07-22 | Nikon Corp | 露光装置及び露光方法、デバイス製造方法 |
JP2005294520A (ja) * | 2004-03-31 | 2005-10-20 | Tokyo Electron Ltd | 塗布・現像装置及び塗布・現像方法 |
JP2005347326A (ja) * | 2004-05-31 | 2005-12-15 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
JP2007158326A (ja) * | 2005-12-02 | 2007-06-21 | Asml Netherlands Bv | 液浸型投影装置の汚染を防止または低減する方法および液浸型リソグラフィ装置 |
JP2007180253A (ja) * | 2005-12-28 | 2007-07-12 | Matsushita Electric Ind Co Ltd | フォトレジストパターン形成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150065864A (ko) * | 2012-10-12 | 2015-06-15 | 가부시키가이샤 니콘 | 방진 장치를 구비한 노광 장치 |
KR102206131B1 (ko) | 2012-10-12 | 2021-01-21 | 가부시키가이샤 니콘 | 방진 장치를 구비한 노광 장치 |
Also Published As
Publication number | Publication date |
---|---|
JP4922858B2 (ja) | 2012-04-25 |
US20090035705A1 (en) | 2009-02-05 |
TW200919545A (en) | 2009-05-01 |
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