JP2009031098A - 放射線検出器及びその製造方法 - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
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- H—ELECTRICITY
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/144—Devices controlled by radiation
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Abstract
【解決手段】アレイ基板12上にX線を蛍光に変換するシンチレータ層13を形成し、シンチレータ層13上にシンチレータ層13の蛍光を反射させる反射膜14を形成する。反射膜は、蛍光を反射させる光散乱性粒子及びこの光散乱性粒子間を結合するバインダ材を含有し、光散乱性粒子の周辺部にバインダ材が充填されていない空乏部を形成する。光散乱性粒子と空乏部との界面での屈折角が大きくなり、シンチレータ層13により変換された蛍光の反射が小領域内で生じ、反射光の遠方拡散による解像度低下や輝度の低下を抑える。
【選択図】図1
Description
13 シンチレータ層
14 反射膜
21 光電変換素子としてのフォトダイオード
Claims (12)
- 光電変換素子と、
この光電変換素子上に形成され、放射線を蛍光に変換するシンチレータ層と、
このシンチレータ層上に形成され、このシンチレータ層からの蛍光を反射させる光散乱性粒子及びこの光散乱性粒子間を結合するバインダ材を含有し、かつ光散乱性粒子の周辺部にバインダ材が充填されていない空乏部が形成されている反射膜と
を具備していることを特徴とする放射線検出器。 - シンチレータ層が柱状構造を有し、反射膜の光散乱性粒子がシンチレータ層上に加えてシンチレータ層の柱間に侵入されている
ことを特徴とする請求項1記載の放射線検出器。 - 反射膜の光散乱性粒子とバインダ材との体積比率が、光散乱性粒子の体積/バインダ材の体積≧4/6の関係を有する
ことを特徴とする請求項1または2記載の放射線検出器。 - バインダ材は、ブチラール系樹脂である
ことを特徴とする請求項1乃至3いずれか記載の放射線検出器。 - 反射膜における光散乱性粒子の体積占有比率が、反射膜の表層側よりシンチレータ層側で大きい
ことを特徴とする請求項1乃至4いずれか記載の放射線検出器。 - 反射膜の光散乱性粒子の平均粒径及び体積充填率と反射膜の膜厚とが、光散乱性粒子の平均粒径/光散乱性粒子の体積充填率≦1/10×膜厚の関係を有する
ことを特徴とする請求項1乃至5いずれか記載の放射線検出器。 - シンチレータ層が柱状構造を有し、反射膜の光散乱性粒子の平均粒径がシンチレータ層の柱状構造の柱間平均ピッチに対して1/4以下である
ことを特徴とする請求項1乃至6いずれか記載の放射線検出器。 - 反射膜の光散乱性粒子の平均粒径が、シンチレータ層の最大発光波長の1/10乃至10倍の範囲である
ことを特徴とする請求項1乃至7いずれか記載の放射線検出器。 - 光電変換素子が所定のピッチで配列され、反射膜の膜厚が光電変換素子のピッチと同等以下である
ことを特徴とする請求項1乃至8いずれか記載の放射線検出器。 - 反射膜は、シンチレータが発光する蛍光成分の少なくとも一部を吸収する光吸収性のフィラー材を含有する
ことを特徴とする請求項1乃至9いずれか記載の放射線検出器。 - 反射膜は、シンチレータ層の上面部を被覆し、シンチレータ層の側面部は被覆しないか被覆しても上面部に対して膜厚を薄くするかのいずれ一方としている
ことを特徴とする請求項1乃至10いずれか記載の放射線検出器。 - 基板上に光電変換素子を形成する工程と、
この光電変換素子上にシンチレータ層を形成する工程と、
光散乱性粒子とこの光散乱性粒子間を結合するバインダ材とこのバインダ材を溶解する沸点100℃以上の溶媒とを攪拌混合した塗布液を、前記シンチレータ層上に塗布した後に乾燥させ、光散乱性粒子の周辺部にバインダ材が充填されていない空乏部が形成された反射膜を形成する工程と
を具備していることを特徴とする放射線検出器の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007194590A JP5022805B2 (ja) | 2007-07-26 | 2007-07-26 | 放射線検出器 |
PCT/JP2008/063292 WO2009014180A1 (ja) | 2007-07-26 | 2008-07-24 | 放射線検出器及びその製造方法 |
KR1020097024677A KR101120244B1 (ko) | 2007-07-26 | 2008-07-24 | 방사선 검출기와 그 제조 방법 |
EP08791544.3A EP2194401B1 (en) | 2007-07-26 | 2008-07-24 | Radiation detector and method for manufacturing the same |
US12/692,902 US8158949B2 (en) | 2007-07-26 | 2010-01-25 | Radiation detector and method for manufacturing the same |
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JP2007194590A JP5022805B2 (ja) | 2007-07-26 | 2007-07-26 | 放射線検出器 |
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JP2009031098A true JP2009031098A (ja) | 2009-02-12 |
JP2009031098A5 JP2009031098A5 (ja) | 2010-07-01 |
JP5022805B2 JP5022805B2 (ja) | 2012-09-12 |
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US (1) | US8158949B2 (ja) |
EP (1) | EP2194401B1 (ja) |
JP (1) | JP5022805B2 (ja) |
KR (1) | KR101120244B1 (ja) |
WO (1) | WO2009014180A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011074249A1 (ja) * | 2009-12-18 | 2011-06-23 | 株式会社 東芝 | 放射線検出器及びその製造方法 |
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JP5629593B2 (ja) * | 2011-02-01 | 2014-11-19 | 株式会社東芝 | 放射線検出器 |
TWI521686B (zh) * | 2013-05-24 | 2016-02-11 | 友達光電股份有限公司 | 光偵測器及其製造方法 |
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EP2194401B1 (en) | 2014-07-16 |
EP2194401A4 (en) | 2013-08-07 |
JP5022805B2 (ja) | 2012-09-12 |
US8158949B2 (en) | 2012-04-17 |
WO2009014180A1 (ja) | 2009-01-29 |
US20100116997A1 (en) | 2010-05-13 |
EP2194401A1 (en) | 2010-06-09 |
KR20100007924A (ko) | 2010-01-22 |
KR101120244B1 (ko) | 2012-03-20 |
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