KR101120244B1 - 방사선 검출기와 그 제조 방법 - Google Patents
방사선 검출기와 그 제조 방법 Download PDFInfo
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- KR101120244B1 KR101120244B1 KR1020097024677A KR20097024677A KR101120244B1 KR 101120244 B1 KR101120244 B1 KR 101120244B1 KR 1020097024677 A KR1020097024677 A KR 1020097024677A KR 20097024677 A KR20097024677 A KR 20097024677A KR 101120244 B1 KR101120244 B1 KR 101120244B1
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
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Abstract
Description
Claims (12)
- 광전변환소자;상기 광전변환소자상에 형성되고, 방사선을 형광으로 변환하는 신틸레이터층;상기 신틸레이터층상에 형성되고, 상기 신틸레이터층으로부터의 형광을 반사시키는 광산란성 입자 및 상기 광산란성 입자 사이를 결합하는 바인더재를 함유하고, 상기 광산란성 입자의 체적/상기 바인더재의 체적≥4/6의 관계를 만족하며, 또한 상기 광산란성 입자의 주변부에 상기 바인더재가 충전되어 있지 않은 공핍부가 형성되어 있는 반사막;을 구비하는 것을 특징으로 하는 방사선 검출기.
- 제 1 항에 있어서,상기 신틸레이터층은 기둥 형상 구조를 갖고,상기 반사막의 광산란성 입자는 상기 신틸레이터층상에 위치하며, 또한 상기 신틸레이터층의 기둥 사이에 침입되어 있는 것을 특징으로 하는 방사선 검출기.
- 제 1 항에 있어서,상기 바인더재는 부티럴계 수지인 것을 특징으로 하는 방사선 검출기.
- 광전변환소자;상기 광전변환소자상에 형성되고, 방사선을 형광으로 변환하는 신틸레이터층;상기 신틸레이터층상에 형성되고, 상기 신틸레이터층으로부터의 형광을 반사시키는 광산란성 입자 및 상기 광산란성 입자 사이를 결합하는 바인더재를 함유하고, 또한 상기 광산란성 입자의 주변부에 상기 바인더재가 충전되어 있지 않은 공핍부가 형성되어 있는 반사막;을 구비하고,상기 반사막의 상기 광산란성 입자의 체적 점유 비율은 상기 반사막의 표층측 보다 상기 신틸레이터층측에서 큰 것을 특징으로 하는 방사선 검출기.
- 광전변환소자;상기 광전변환소자상에 형성되고, 방사선을 형광으로 변환하는 신틸레이터층;상기 신틸레이터층상에 형성되고, 상기 신틸레이터층으로부터의 형광을 반사시키는 광산란성 입자 및 상기 광산란성 입자 사이를 결합하는 바인더재를 함유하고, 또한 상기 광산란성 입자의 주변부에 상기 바인더재가 충전되어 있지 않은 공핍부가 형성되어 있는 반사막;을 구비하고,상기 반사막은 상기 광산란성 입자의 평균 입자직경/상기 광산란성 입자의 체적 충전률≤1/10×막 두께의 관계를 만족하는 것을 특징으로 하는 방사선 검출기.
- 광전변환소자;상기 광전변환소자상에 형성되고, 방사선을 형광으로 변환하는 신틸레이터층;상기 신틸레이터층상에 형성되고, 상기 신틸레이터층으로부터의 형광을 반사시키는 광산란성 입자 및 상기 광산란성 입자 사이를 결합하는 바인더재를 함유하고, 또한 상기 광산란성 입자의 주변부에 상기 바인더재가 충전되어 있지 않은 공핍부가 형성되어 있는 반사막;을 구비하며,상기 신틸레이터층은 기둥 형상 구조를 갖고,상기 반사막의 광산란성 입자의 평균 입자직경은 상기 신틸레이터층의 기둥 형상 구조의 기둥 사이 평균 피치에 대해 1/4 이하인 것을 특징으로 하는 방사선 검출기.
- 광전변환소자;상기 광전변환소자상에 형성되고, 방사선을 형광으로 변환하는 신틸레이터층;상기 신틸레이터층상에 형성되고, 상기 신틸레이터층으로부터의 형광을 반사시키는 광산란성 입자 및 상기 광산란성 입자 사이를 결합하는 바인더재를 함유하고, 또한 상기 광산란성 입자의 주변부에 상기 바인더재가 충전되어 있지 않은 공핍부가 형성되어 있는 반사막;을 구비하고,상기 반사막의 광산란성 입자의 평균 입자직경은 상기 신틸레이터층의 최대 발광 파장의 1/10 내지 10배의 범위 내인 것을 특징으로 하는 방사선 검출기.
- 제 1 항에 있어서,상기 광전변환소자는 소정의 피치로 배열되고,상기 반사막의 막 두께는 상기 광전변환소자의 피치와 동등 이하인 것을 특징으로 하는 방사선 검출기.
- 광전변환소자;상기 광전변환소자상에 형성되고, 방사선을 형광으로 변환하는 신틸레이터층;상기 신틸레이터층상에 형성되고, 상기 신틸레이터층으로부터의 형광을 반사시키는 광산란성 입자 및 상기 광산란성 입자 사이를 결합하는 바인더재를 함유하고, 또한 상기 광산란성 입자의 주변부에 상기 바인더재가 충전되어 있지 않은 공핍부가 형성되어 있는 반사막;을 구비하고,상기 반사막은 상기 신틸레이터층이 발광하는 형광 성분의 적어도 일부를 흡수하는 광흡수성 필러재를 함유하는 것을 특징으로 하는 방사선 검출기.
- 제 1 항에 있어서,상기 반사막은 상기 신틸레이터층의 상면부를 피복하고, 상기 신틸레이터층의 측면부를 피복하지 않는 것을 특징으로 하는 방사선 검출기.
- 제 1 항에 있어서,상기 반사막은 상기 신틸레이터층의 상면부를 피복하고, 또한 상기 신틸레이터층의 측면부를 피복하며, 상기 상면부에 대해 얇은 막두께를 갖는 것을 특징으로 하는 방사선 검출기.
- 기판상에 광전변환소자를 형성하는 단계;상기 광전변환소자상에 신틸레이터층을 형성하는 단계;광산란성 입자와 상기 광산란성 입자 사이를 결합하는 바인더재와 상기 바인더재를 용해하는 비점 100℃ 이상의 용매를 교반 혼합한 도포액을 상기 신틸레이터층상에 도포한 후에 건조시키고, 상기 광산란성 입자의 주변부에 상기 바인더재가 충전되어 있지 않은 공핍부가 형성된 반사막을 형성하는 단계;를 구비하는 것을 특징으로 하는 방사선 검출기의 제조 방법.
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