JP2009021272A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2009021272A
JP2009021272A JP2007180546A JP2007180546A JP2009021272A JP 2009021272 A JP2009021272 A JP 2009021272A JP 2007180546 A JP2007180546 A JP 2007180546A JP 2007180546 A JP2007180546 A JP 2007180546A JP 2009021272 A JP2009021272 A JP 2009021272A
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JP
Japan
Prior art keywords
gas supply
supply member
gas
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007180546A
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English (en)
Japanese (ja)
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JP2009021272A5 (https=
Inventor
Hiroichi Ueda
博一 上田
Masahiro Horigome
正弘 堀込
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007180546A priority Critical patent/JP2009021272A/ja
Priority to TW97121588A priority patent/TW200915419A/zh
Priority to PCT/JP2008/060763 priority patent/WO2009008241A1/ja
Publication of JP2009021272A publication Critical patent/JP2009021272A/ja
Publication of JP2009021272A5 publication Critical patent/JP2009021272A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2007180546A 2007-07-10 2007-07-10 プラズマ処理装置 Pending JP2009021272A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007180546A JP2009021272A (ja) 2007-07-10 2007-07-10 プラズマ処理装置
TW97121588A TW200915419A (en) 2007-07-10 2008-06-10 Plasma treating apparatus
PCT/JP2008/060763 WO2009008241A1 (ja) 2007-07-10 2008-06-12 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007180546A JP2009021272A (ja) 2007-07-10 2007-07-10 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2009021272A true JP2009021272A (ja) 2009-01-29
JP2009021272A5 JP2009021272A5 (https=) 2011-10-06

Family

ID=40228420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007180546A Pending JP2009021272A (ja) 2007-07-10 2007-07-10 プラズマ処理装置

Country Status (3)

Country Link
JP (1) JP2009021272A (https=)
TW (1) TW200915419A (https=)
WO (1) WO2009008241A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014030558A1 (ja) * 2012-08-23 2014-02-27 東京エレクトロン株式会社 シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263354A (ja) * 1994-03-25 1995-10-13 Kobe Steel Ltd プラズマｃｖｄ膜の形成方法
JPH09223693A (ja) * 1995-12-11 1997-08-26 Sony Corp シリコン化合物系絶縁膜の成膜方法
JP2003086523A (ja) * 2001-06-25 2003-03-20 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置及びクリーニング方法及び成膜方法
JP2007008705A (ja) * 2005-07-04 2007-01-18 Hitachi Plant Technologies Ltd スタッカクレーン

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263354A (ja) * 1994-03-25 1995-10-13 Kobe Steel Ltd プラズマｃｖｄ膜の形成方法
JPH09223693A (ja) * 1995-12-11 1997-08-26 Sony Corp シリコン化合物系絶縁膜の成膜方法
JP2003086523A (ja) * 2001-06-25 2003-03-20 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置及びクリーニング方法及び成膜方法
JP2007008705A (ja) * 2005-07-04 2007-01-18 Hitachi Plant Technologies Ltd スタッカクレーン

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014030558A1 (ja) * 2012-08-23 2014-02-27 東京エレクトロン株式会社 シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置
JP2014060378A (ja) * 2012-08-23 2014-04-03 Tokyo Electron Ltd シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置

Also Published As

Publication number Publication date
TW200915419A (en) 2009-04-01
TWI373805B (https=) 2012-10-01
WO2009008241A1 (ja) 2009-01-15

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