TWI373805B - - Google Patents
Download PDFInfo
- Publication number
- TWI373805B TWI373805B TW97121588A TW97121588A TWI373805B TW I373805 B TWI373805 B TW I373805B TW 97121588 A TW97121588 A TW 97121588A TW 97121588 A TW97121588 A TW 97121588A TW I373805 B TWI373805 B TW I373805B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas supply
- supply member
- gas
- plasma
- processing apparatus
- Prior art date
Links
- 239000007921 spray Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000839 emulsion Substances 0.000 claims description 4
- 230000006378 damage Effects 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 123
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 230000005855 radiation Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005612 types of electricity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007180546A JP2009021272A (ja) | 2007-07-10 | 2007-07-10 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200915419A TW200915419A (en) | 2009-04-01 |
| TWI373805B true TWI373805B (https=) | 2012-10-01 |
Family
ID=40228420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97121588A TW200915419A (en) | 2007-07-10 | 2008-06-10 | Plasma treating apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2009021272A (https=) |
| TW (1) | TW200915419A (https=) |
| WO (1) | WO2009008241A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014060378A (ja) * | 2012-08-23 | 2014-04-03 | Tokyo Electron Ltd | シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07263354A (ja) * | 1994-03-25 | 1995-10-13 | Kobe Steel Ltd | プラズマcvd膜の形成方法 |
| JP3440714B2 (ja) * | 1995-12-11 | 2003-08-25 | ソニー株式会社 | シリコン化合物系絶縁膜の成膜方法 |
| JP3935731B2 (ja) * | 2001-06-25 | 2007-06-27 | 三菱重工業株式会社 | プラズマcvd装置及びクリーニング方法及び成膜方法 |
| JP4689372B2 (ja) * | 2005-07-04 | 2011-05-25 | 株式会社日立プラントテクノロジー | スタッカクレーンの走行駆動制御方法 |
-
2007
- 2007-07-10 JP JP2007180546A patent/JP2009021272A/ja active Pending
-
2008
- 2008-06-10 TW TW97121588A patent/TW200915419A/zh not_active IP Right Cessation
- 2008-06-12 WO PCT/JP2008/060763 patent/WO2009008241A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| TW200915419A (en) | 2009-04-01 |
| WO2009008241A1 (ja) | 2009-01-15 |
| JP2009021272A (ja) | 2009-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW514672B (en) | A plasma processing system and a method for plasma processing a substrate | |
| KR101701024B1 (ko) | 컨포멀한 알루미늄 질화물을 위한 고 성장 레이트 프로세스 | |
| JP6404111B2 (ja) | プラズマ処理装置 | |
| JP5909484B2 (ja) | 短寿命種のためのプラズマ源を組み込んだプロセスチャンバ蓋の設計 | |
| TWI660420B (zh) | 使用遠端電漿源之加強式蝕刻製程 | |
| US20130240492A1 (en) | Apparatus For Generating Hollow Cathode Plasma And Apparatus For Treating Large Area Substrate Using Hollow Cathode Plasma | |
| TW201913809A (zh) | 電漿蝕刻製程中使用塗佈部件的製程裕度擴充 | |
| JP2023065378A (ja) | 基板及びチャンバ部品上への金属ケイ素化合物層の堆積 | |
| CN104395498A (zh) | 使用快速热处理的原子层沉积 | |
| TW201229300A (en) | Apparatus and process for atomic layer deposition | |
| WO2008056742A1 (fr) | Procédé de fabrication de film barrière | |
| TW201435962A (zh) | 具有均勻電漿密度之電容式耦合電漿設備 | |
| CN107516626A (zh) | 用于原位晶片边缘和背侧等离子体清洁的系统和方法 | |
| JP2016522539A (ja) | 均一なプラズマ密度を有する容量結合プラズマ装置 | |
| TW201033401A (en) | Plasma treatment apparatus and plasma CVD method for forming film | |
| JP3243125B2 (ja) | 処理装置 | |
| TWI387046B (zh) | 電漿處理系統 | |
| TW201112886A (en) | Plasma treatment apparatus | |
| TWI373805B (https=) | ||
| TW200915382A (en) | Plasma treatment apparatus and method of plasma treatment | |
| US20150176125A1 (en) | Substrate processing apparatus | |
| KR20120097050A (ko) | 플라즈마 처리장치 | |
| TW201110828A (en) | Plasma treatment apparatus | |
| KR100457455B1 (ko) | 박막 증착 속도를 조절하는 샤워헤드를 구비한 화학 기상증착 장치. | |
| JP2002118104A (ja) | プラズマ処理装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |