200915382 九、發明說明： 【發明所屬之技術領域】 本發明係關於在處理容器内生成電漿來處理基板之電漿 處理裝置及方法。 【先前技術】 以往以來，譬如在成膜處理及蝕刻處理中，譬如使用有 利用微波之電漿處理裝置。進而在使用微波之電漿處理裝 置中，已提案有一種具有將處理容器内以分為上部之電漿 生成空間與下部之處理空間之方式水平配置於處理容器内 的稱為噴射板之氣體供給構件者（專利文獻1、2)。 前述先前技術之噴射板上，形成多數個用於向處理空間 側供給處理氣體之氣體供給孔，又，形成有多數個連通電 漿生成空間側與處理空間側之開口。根據具有所述喷射板 之電漿處理裝置，可在高處理效率之下減輕對基板之損 壞’進行適宜之電漿處理。 但，在如此使用處理容器之内部具有喷射板之電漿處理 裝置進行譬如電漿CVD處理之情形，為防止噴射板由於電 漿之熱加熱發生變形、或防止喷射板上附著反應生成物， 最好將嘴射板自身之溫度控制在一定溫度。又，若噴射板 之溫度不為一定溫度，則有配置於噴射板之下方之基板的 溫度發生變化，不能進行安定均一之處理的擔憂。 因此，根據先前，使氣體及液體等之冷媒流通於喷射板 之内部’藉由冷媒冷卻噴射板。該情形，亦揭示了 一種使 霧狀之流體流通於噴射板之内部以提高冷卻能力之方法 127812.doc 200915382 (專利文獻3)。 [專利文獻1]日本特開2006-203246號公報 [專利文獻2]日本特開2002-29933 0號公報 [專利文獻3]日本特開2005-197600號公報 【發明内容】 [發明所欲解決之問題] Ο200915382 IX. Description of the Invention: [Technical Field] The present invention relates to a plasma processing apparatus and method for processing a substrate by generating plasma in a processing vessel. [Prior Art] Conventionally, for example, in a film forming process and an etching process, a plasma processing apparatus using microwaves has been used. Further, in the plasma processing apparatus using microwaves, there has been proposed a gas supply called a spray plate which is disposed horizontally in the processing container so as to divide the plasma generation space and the lower processing space into upper portions in the processing container. Component members (Patent Documents 1, 2). In the above-described prior art jet plate, a plurality of gas supply holes for supplying a processing gas to the processing space side are formed, and a plurality of openings for connecting the plasma generating space side and the processing space side are formed. According to the plasma processing apparatus having the spray plate, it is possible to reduce the damage to the substrate under a high processing efficiency by performing a suitable plasma treatment. However, in the case where the plasma processing apparatus having the spray plate inside the treatment container is subjected to, for example, plasma CVD treatment, the deformation of the spray plate due to the heat of the plasma is prevented, or the reaction product is prevented from adhering to the spray plate. It is good to control the temperature of the nozzle plate itself to a certain temperature. Further, if the temperature of the injection plate is not constant, the temperature of the substrate disposed below the injection plate may change, and the process of stability and uniformity may not be performed. Therefore, according to the prior art, a refrigerant such as a gas or a liquid is caused to flow through the inside of the spray plate, and the spray plate is cooled by the refrigerant. In this case, a method of circulating a mist-like fluid inside the spray plate to improve the cooling ability is also disclosed. 127812.doc 200915382 (Patent Document 3). [Patent Document 1] JP-A-2006-203246 (Patent Document 2) Japanese Laid-Open Patent Publication No. 2002-29933 No. 2005-197600 [Patent Document 3] [Invention] Question] Ο
但，在先前之電漿處理裝置中，流通於噴射板内部之冷 媒的流通方向只為單一方向。因此，雖然在喷射板之Μ 之入口側冷卻能力變高，但在冷媒之出口側冷卻能力相對 下降，具有喷射板全體之溫度分佈不均一之門題 ==狀冷媒之情形’藉由將分散:氣體中之粒 子狀之液體在冷媒之入口侧蒸發，在冷媒之出口側僅 體進行冷卻。因此，盥利用Υ鉻舳 乳 此與利用蒸發熱來進行冷卻之入口側相 h在出口側之冷卻能力變得相當低，具有噴射板 溫度分佈變得更為不均一之問題。 之 面内溫度不均一、或不能維持於所望之溫度， :板=大，發生噴射板變形、扭曲。其結果，迫使噴 η义要進仃頻繁交換，根據情形甚至有發 處理之均一性之擔憂。 ！王有赞生阻害 本發明係鑒於所述點 等氣體供給構件之面内：=其目的係提高前述喷射板 發生變形、扭曲，可進一性，抑制氣體供給構件 , a 了進仃安定基板之處理。 [解決問題之技術手段] 為達成前述目的，根據本發明 發月者提供一種電漿處 I27812.doc 200915382 理裝置，其特徵在於：係在處理容器内收納美 氣體電聚化來處理基板之電漿處理袭置，在二述處理容器 ==有處理氣體供給用之氣體供給構件，在前述氣體供 二牛之内部，形成有流通熱媒之熱媒流路，具有 述'、、、媒抓路之熱媒之流通方向的流路切換機構。 在該電聚處理裝置中，前述氣體供給構件配置為 分前述處理容器内之 - 之恭番A 方式，在則述處理容器内，载置基板 η 載置σ亦可配置於前述氣體供給構件之下方。又 ^氣體供給構件上，亦可形成貫通上下之複數個開口、: 二對於載置於前述載置台之基板供給處理氣體之處理氣 構::Γ二Γ前述氣體供給構件，具有縱棧構件與橫棧 構件配置為格柵狀之形狀，前述熱媒流路 =機構件或橫機構件之内部。χ，至少在前述縱機= '検棧構件之内部，亦可設置處理氣體之流路。又 熱=流路與前述處理氣體之流路亦可配置為上下重疊。、 月ίι述熱媒，係譬如使粒子 子狀之液體分散於氣體中之霧狀 々比體。又，則述熱媒，譬如為氣體。 又’根據本發明，發明者提供—種電衆處理方法 =於：其係在處理容器内收納基板、將處理氣體電聚= 处理基板之電漿處理方法’於配置於前述處理容器内之 2理氣體供給用氣體供給構件之内部形成的熱媒流路中， 在使熱媒流通於該熱媒流路來調節氣體供給 際’使前述熱媒流路之熱媒流通方向交互變更。之 電聚處理方法中，亦可以一定時間使前述熱媒流路 127812.doc 200915382 之熱媒流通方向交互地變更 路之執… ώ 或者，亦可測定前述熱媒流 、”超… 與出口溫度，在該等入口溫度與出口 :度超過特定溫度差之情形，變更熱媒之流通方向。再 者，亦可藉由監測前述氣體供給構件之溫度，進行 流量調節，進行氣體供^ + ' μ辟， 溫度控制…前述熱 某如為使粒子狀之液體分勒於名胁士 狀通刀敢於莉^體中之霧狀流 又’前述熱媒，譬如為氣體。 【實施方式】However, in the prior plasma processing apparatus, the flow direction of the refrigerant flowing through the inside of the spray plate was only a single direction. Therefore, although the cooling capacity at the inlet side of the spray plate becomes high, the cooling capacity at the outlet side of the refrigerant is relatively lowered, and the temperature distribution of the entire spray plate is not uniform, and the case of the refrigerant is dispersed. The particulate liquid in the gas evaporates on the inlet side of the refrigerant, and only the body is cooled at the outlet side of the refrigerant. Therefore, the use of ruthenium chrome emulsion and the inlet side phase h which is cooled by the heat of vaporization have a relatively low cooling capacity on the outlet side, and there is a problem that the temperature distribution of the spray plate becomes more uneven. The temperature in the surface is not uniform, or cannot be maintained at the desired temperature. The plate = large, and the spray plate is deformed and twisted. As a result, the spurt is forced to exchange frequently, and depending on the situation, there is even concern about the uniformity of processing. ! The invention is based on the in-plane of the gas supply member such as the point: = the purpose is to improve the deformation and distortion of the spray plate, and to improve the gas supply member, and to process the substrate. . [Technical means for solving the problem] In order to achieve the above object, the present inventors provide a plasma device I27812.doc 200915382 according to the present invention, which is characterized in that the semiconductor gas is collected in a processing container to process the electricity of the substrate. In the case where the slurry treatment is carried out, the gas supply means for supplying the processing gas is provided in the second processing container, and the heat medium flow path through which the heat medium flows is formed in the gas supply to the two cattle. A flow switching mechanism for the flow direction of the heat medium of the road. In the electropolymerization apparatus, the gas supply member is disposed in a manner of a division in the processing container, and in the processing container, the mounting substrate η is placed on the gas supply member. Below. Further, the gas supply member may be formed with a plurality of openings extending through the upper and lower sides, and a process gas for supplying a processing gas to the substrate placed on the mounting table: the gas supply member has a vertical stack member and The horizontal stack member is arranged in a lattice shape, and the heat medium flow path is inside the machine member or the flat machine member. χ At least in the aforementioned vertical machine = '検 stack member, a flow path for the processing gas may also be provided. Further, the heat flow path and the flow path of the processing gas may be arranged to overlap each other. , ί ι ι 热 热 热 热 热 热 热 热 ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί Further, the heat medium is, for example, a gas. Further, according to the present invention, the inventors provide a method for processing the electrician = in which the substrate is housed in a processing container, and the processing gas is electropolymerized = the plasma processing method for processing the substrate is disposed in the processing container. In the heat medium flow path formed inside the gas supply member, the heat medium flows through the heat medium flow path to adjust the gas supply, and the heat medium flow direction of the heat medium flow path is alternately changed. In the electropolymerization processing method, the heat medium flow direction of the heat medium flow path 127812.doc 200915382 may be alternately changed to the road in a certain period of time. ώ Alternatively, the heat medium flow, the "super... and the outlet temperature may be measured. In the case where the inlet temperature and the outlet temperature exceed a certain temperature difference, the flow direction of the heat medium is changed. Further, by monitoring the temperature of the gas supply member, the flow rate can be adjusted to perform gas supply.立, Temperature control... The above-mentioned heat is such that the liquid in the form of particles is in the form of a misty flow in the body of the name, and the heat medium, such as a gas.
[發明之效果] 本發明可藉由交互變更熱媒流路之熱媒之流通方 制在氣體供給構件之熱媒之入口侧與出口側發生之溫度偏 差。因此，可提高氣體供給構件之面内溫度之均一性，抑 制氣體供給構件之變形、扭曲之發生，進行安定之基板， 理0[Effects of the Invention] The present invention can change the temperature deviation between the inlet side and the outlet side of the heat medium of the gas supply member by alternately changing the flow of the heat medium in the heat medium flow path. Therefore, the uniformity of the in-plane temperature of the gas supply member can be improved, the occurrence of deformation and distortion of the gas supply member can be suppressed, and the substrate can be stabilized.
以下’對本發明之較佳實施形態進行說明。圖i係表示 本實施形態之電漿處理裝£1之概略構成之縱截面圖。圖2 係該電隸置丨具有之喷射板（氣體供給構件）5q之上視圖， 圖5係噴射板（氣體供給構件）5〇之底視圖。圖4係圖2中之 X-X截面之擴大截面圖。圖5係熱媒供給機構6〇之說明圖。 又’在以下之實施形態中，作為熱媒之—例，說明使用使 粒子狀之液體分散於氣體中之霧狀流體來冷卻噴射板5〇之 例。又，在本說明書及圖式中，對於實質具有同一功能構 成之構成要素，藉由附上相同符號以省略重複說明。 如圖1所示，該電漿處理裝置丨由譬如鋁形成，具有上部 127812.doc -10- 200915382 開口之有底圓筒狀之處理容器2。在處理容器2之内壁面， 被覆有譬如氧化鋁等之保護膜。處理容器2電性接地。 在處理容器2之底部，作為基板設置有作為用於載置譬 如半導體晶圓（以下稱為晶圓）w之載置台之加熱台3。該加 熱台3由譬如鋁形成，纟内部設置有藉由來自外部電源*之 電力之供給來發熱的加熱器5。藉此’可將加熱台3上之晶 圓W加熱到特定溫度。Hereinafter, preferred embodiments of the present invention will be described. Fig. i is a longitudinal sectional view showing a schematic configuration of a plasma processing apparatus 1 of the present embodiment. Fig. 2 is a top view of the spray plate (gas supply member) 5q having the electric discharge, and Fig. 5 is a bottom view of the spray plate (gas supply member). Figure 4 is an enlarged cross-sectional view of the X-X section in Figure 2. Fig. 5 is an explanatory view of the heat medium supply mechanism 6A. Further, in the following embodiments, as an example of the heat medium, an example in which the spray plate 5 is cooled by using a mist-like fluid in which a particulate liquid is dispersed in a gas is used. In the present specification and the drawings, the same reference numerals are given to the components that have substantially the same function, and the repeated description is omitted. As shown in Fig. 1, the plasma processing apparatus is formed of, for example, aluminum, and has a bottomed cylindrical processing vessel 2 having an upper portion of 127812.doc -10-200915382. The inner wall surface of the processing container 2 is covered with a protective film such as alumina. The processing container 2 is electrically grounded. At the bottom of the processing container 2, a heating stage 3 as a mounting table for mounting a semiconductor wafer (hereinafter referred to as a wafer) w is provided as a substrate. The heating stage 3 is formed of, for example, aluminum, and a heater 5 which generates heat by supply of electric power from an external power source * is provided inside the crucible. Thereby, the crystal circle W on the heating stage 3 can be heated to a specific temperature.
在處理容器2之底部，設置有用於藉由真μ等之排氣 裝置11以使處理容器2内之空氣排氣的排氣管12。 在處理容器2之上部開口 ’設置有經由用於確保氣密性 之〇環等之密封材21，由譬如介電質之石英構件形成之透 過窗22。透過窗22為略圓盤形狀。除石英構件，亦可使用 其他介電質材料，譬如八丨2〇3、Α1Ν等陶瓷。 在透過® 22之上方’設置有平面狀之天線構件、譬如圓 板狀之徑向線縫隙天線23。徑向線縫隙天線23由具有導電 性之材質’譬如由Ag、Au#電鍍及表面塗層之銅之薄圓 板形成’多數個微縫24譬如整列形成為渦卷狀及同心圓 狀0 在徑向線縫隙天線23之上面配置有用於縮短後述之微波 波長的滯波板25。滯波板25由導電性之外㈣覆蓋”卜殼 26設置有圓環狀之熱媒流路27，藉由流動於該熱媒流路^ 之熱媒’將外殼26與透過窗22維持於特定溫度。 在外殼26之中央連接有同軸導波管29，該^轴導波管μ 由内側導體29a與外管29b構成。内側導體W與上述徑向 127812.doc 200915382 線縫隙天線23連接。内側導體29a之徑向線縫隙天線⑶則 形成為圓錐形，可對徑向線縫隙天線23高效地傳播微波。 同軸導波管29，將在微波供給裝置31中發生之譬如245 GHz之微波，經由矩形導波管32、模型變換器&同轴導 波管29、滯波板25、徑向線縫隙天線23，放射到透過窗 22。且，藉由其時之微波能量在透過窗22之下面形成電 場’使處理容器2内之處理氣體電漿化。 在處理容器2内，作為氣體供給構件之噴射板5〇，水平 〇 酉己置為將處理容器2内上下劃分之方式。如圖2、3所示， 該喷射板50具有將複數個縱棧51與複數個橫棧^配置為格 柵狀之構成。該等縱棧51與橫棧52之材質由鋁形成。又， 在配置為格柵狀之縱棧51與橫棧52之間，貫通上下地形成 有複數個四角形之開口 53，通過該等開口 53，處理容器2 内成上下流通之狀態。 在該實施形態中，複數個橫棧52之中，在3根橫棧52之 内部設置有熱媒流路55與處理氣體之流路％。如圖4所 1； 示，該等熱媒流路55與處理氣體之流路56,在橫棧52之内 4配置為上下重疊。又，如後面詳細說明，熱媒流路55， 具有配置於中央之1條熱媒流路55a與配置於兩側之2條熱 媒流路55b。同樣，處理氣體之流路％，亦具有配置於中 央之1條處理氣體之流路56a與配置於兩側之2條處理氣體 之流路56b。 熱媒桃路55上’流通如圖5所示之由熱媒供給機構⑼所 供給之熱媒。在該實施形態中，作為用於冷卻喷射板50之 127812.doc 12 200915382 熱媒的將粒子狀之液體分散於氣體中之冑狀流冑，由熱媒 供給機構60供給’流通於熱媒流路55。At the bottom of the processing container 2, an exhaust pipe 12 for exhausting air in the processing container 2 by means of an exhaust device 11 such as a true μ is provided. The upper opening ' of the processing container 2 is provided with a through-hole 22 formed of a dielectric member such as a dielectric member via a sealing member 21 for securing an airtightness or the like. The through window 22 has a slightly disc shape. In addition to the quartz member, other dielectric materials such as gossip 2〇3, Α1Ν, etc. can be used. A planar antenna member, such as a disk-shaped radial line slot antenna 23, is disposed above the transmission plate 22. The radial line slot antenna 23 is formed of a conductive material such as a thin circular plate made of Ag, Au# plated and surface-coated copper. A plurality of micro slits 24 are formed into a spiral shape and a concentric shape. A retardation plate 25 for shortening a microwave wavelength to be described later is disposed on the upper surface of the radial line slot antenna 23. The retardation plate 25 is covered with a conductive outer (four) cover. The outer casing 26 is provided with an annular heat medium flow path 27, and the outer casing 26 and the transmission window 22 are maintained by the heat medium flowing through the heat medium flow path. A specific temperature is connected to the center of the casing 26. A coaxial waveguide 29 is formed by the inner conductor 29a and the outer tube 29b. The inner conductor W is connected to the radial 127812.doc 200915382 line slot antenna 23. The radial line slot antenna (3) of the inner conductor 29a is formed in a conical shape, and the microwave can be efficiently propagated to the radial line slot antenna 23. The coaxial waveguide 29, which will generate microwaves such as 245 GHz in the microwave supply device 31, The rectangular waveguide 32, the model converter & the coaxial waveguide 29, the retardation plate 25, and the radial line slot antenna 23 are radiated to the transmission window 22. And, by the time, the microwave energy is in the transmission window 22 The electric field is formed on the lower side to plasma the processing gas in the processing container 2. In the processing container 2, as the ejection plate 5 of the gas supply member, the horizontal level is set to divide the inside and outside of the processing container 2. As shown in Figures 2 and 3, the spray plate 50 has a plurality The vertical stack 51 and the plurality of horizontal stacks are arranged in a grid shape. The material of the vertical stack 51 and the horizontal stack 52 is formed of aluminum. Further, the vertical stack 51 and the horizontal stack 52 are arranged in a grid shape. A plurality of square-shaped openings 53 are formed through the upper and lower sides, and the inside of the processing container 2 is vertically circulated through the openings 53. In this embodiment, among the plurality of horizontal stacks 52, in the three horizontal stacks 52 The inside of the flow path 55 of the heat medium flow path 55 and the process gas is provided. As shown in Fig. 4, the heat medium flow path 55 and the flow path 56 of the process gas are arranged in the horizontal stack 52. Further, as will be described in detail later, the heat medium flow path 55 has one heat medium flow path 55a disposed at the center and two heat medium flow paths 55b disposed on both sides. Similarly, the flow path of the process gas is There is also a flow path 56a for processing gas disposed in the center and a flow path 56b for two process gases disposed on both sides. The heat medium is 55 on the flow path 55 as shown by the heat medium supply mechanism (9). The supplied heat medium. In this embodiment, as the heat medium for cooling the spray plate 50, 127812.doc 12 200915382 The liquid is dispersed in the sub-like helmet helmet-shaped flow of the gas, the heat medium is supplied by the supply means 60 'flowing through the heat medium passage 55.
熱媒供給機構60，具有··流量調整部（調節器）62，其係 將填充有譬如冑縮空氣等載流氣體之液化氣瓶等氣體供給 源61所供給之載流氣體調整到特定之流量；霧發生部63，° 其係在由該流量調整機62調整了流量之載臺上，藉由將譬 如水等液體作為粒子狀而混合，來發生將粒子狀之液體分 散於氣體中之霧狀流體。在霧發生部63上連接有供給^ 64，可經由該供給配管64將作為熱媒之霧狀流體供給至喷 射板5 0内之熱媒流路5 5。 又，熱媒從喷射板50内之熱媒流路55、經由返回配管65 返回到熱媒供給機構6〇。在熱媒供給機構6〇中，將經由返 回配管65而返回之熱媒中之液體成分藉由氣液分離器“分 離，藉由將分離之液體成分經由貯留部67返回到霧發生部 63而再利用熱媒中之液體成分。―方面，#出由氣^分離 器分離之氣體成分。 作為流路切換機構之2個切換閥7〇、71介在於熱媒供給 機構60與噴射板50之間。該等切換閥70、71譬如由三方閥 構成。在該等切換，、71之中…方之切㈣7〇，連接 於上述熱媒供給機構60之供給配管64。又，他方之切換閥 71，連接於上述熱媒供給機構6〇之返回配管65。 又，若要詳細說明設置於噴射板5〇内之熱媒流路Η，則 對於配置於中央之1條熱媒流路55a，以分別平行之方式在 兩側上配置2條熱媒流路55b。該等配置於中央之熱媒流路 127812.doc 200915382 55a與配置於兩側之2條熱媒流路55b之前端部，在喷射板 50之周緣部相接。切換閥7〇、7 w备士接# &上 供阀’〇 71係構成為相對該等熱媒流 路55a與熱媒流路55b選擇性連接。 切換閥70、71，由控制部72同時控制，在接通切換闕 與熱媒流路55a、接通切換閥71與熱媒流路55b之狀態，及 接通切換閥70與熱媒流路55b、接通切換閥71與觸流路 W之狀態[選擇性地切換。在藉由該控制部72之控 制，接通切換閥70與熱媒流路55a、接通切換閥η與熱媒 流路55b之情形，由熱媒供給機構⑼之供給配管μ供給之 熱媒’流到最初配置於中央之熱媒流路仏，在噴射板％ 之周緣部分流之後’流到配置於兩側之2條熱媒流路別， 進而，成經由返回配管65而返回到熱媒供給機構⑼之狀 態。-方面’在接通切換閥7〇與熱媒流路说、接通切換 與熱媒流路55a之情形’由熱媒供給機構⑽之供給配 管64所供給之熱媒’流到最初配置於兩側之2條熱媒流路 別’在喷射板50之周緣部合流之後，流到配置於中央之 熱媒流路5 5 a，進而，μ出$ η❽, '’、由返回配官65成返回到熱媒供給 機構60之狀態"如此，藉由控制部72之控制，可變更熱媒 流路55(55a、55b)之熱媒之流通方向。 、 士圖3所不δ又置於噴射板50内之處理氣體之流路 56亦同樣，相對配置於中央之i條處理氣體之流路5“，以 刀别平行之方式在兩側配置2條處理氣體之流路56b。在噴 射板50之下面形成有多數個處理氣體吐出孔川，在各處 理軋體吐出孔80上’連接有形成於噴射板5〇内之處理氣體 127812.doc -14- 200915382 之流路56a、56b。該等處理氣體之流路56a、56b，連通於 供給電漿處理用之氣體之處理氣體供給源81。在處理氣體 供給源81貯留有作為電衆處理用之氣體之譬如a氣、氧 氣由該處理氣體供給源81通過處理氣體之流路56(56a、 56bJ導入到嘴射板5〇内之電漿處理用之氣體，由複數個處 理軋體吐出孔8〇供給於處理容器2内。 其_入，對如以上構成之電漿處理裝置1之作用進行說 明。 在忒電漿處理裝置丨中進行譬如電漿成膜處理之際如 圖1所不’首先將晶圓…搬入到處理容器2内，載置到加熱 台3上。接著，由排氣管12排氣以使處理容器2内減壓。進 而，由處理氣體吐出孔8〇將由處理氣體供給源81所供給之 電漿成膜用之處理氣體供給至處理容器2内。接著，藉由 微波ί、給裝置31之作動，在透過窗22之下面發生電場，使 前述處理氣體電漿化，藉由其時發生之活性種，在晶圓貿 上進行成膜處理。 接著，進行特定時間成膜處理之後，結束微波供給裝置 31之作動，與停止向處理容器2内供給處理氣體、從處理 容器2内搬出晶圓W、結束―系狀電漿成膜處理。 電聚成膜處理中’藉由伴隨電锻發生之熱，噴射板50之 特別是中〜區域之溫度上升。但，在該電漿處理裝置1 ^ +在構成喷射板50之橫棧52之内部設置有熱媒流路55， 可藉由熱媒供給機構60 ,使由霧狀流體形成之熱媒流通於 該熱媒流路55，冷卻喷射板50全體。因此，可在將噴射板 127812.doc -15- 200915382 50之溫度維持於所望之溫度之同時，提高面内溫度之均一 性，抑制處理之際的噴射板50之變形、扭曲之發生。 在如此使熱媒流通於熱媒流路55之情形，藉由控制部Μ 之控制，由熱媒供給機構6〇所供給之熱媒，交互地切換， 在最初流到配置於中央之熱媒流路55a之冑，流到配置於 兩側之2條熱媒流路551?而返回到熱媒供給機構的之狀態， 與在最初流到配置於兩侧之2條熱媒流路55b之後，流到配 置於中央之熱媒流路55a而返回到熱媒供給機構之狀 如此’藉由切換閥70、71之同期切換，可將噴射板_ 之熱媒流路55之熱媒之流通方向向相互反向之方向變更。 在熱媒流路55内使熱媒僅向單—方向流通之情形，在熱媒 之入口側與出口側發生溫度偏差。與之相對，冑由切換閥 m之切換以適當之時機逆轉熱媒流路55之熱媒之流通 方向’藉此可抑制此種之溫度偏差。譬如，在熱媒流路55 内使熱媒僅向單-方向流通之情形’相對在熱媒之入口側 與出口側發生約抓之溫度偏差，藉由以適當之時機逆轉 熱媒流路55之熱媒之流通方向’可將溫度偏差塵於約 C。 -，精宙此種控制部72之控制變更切換之熱煤流通方 向’例如測定熱煤對於喷射板5()之人口溫度及出口溫度， 於該等入口溫度與出口溫度超過特定之溫度差時，可^ 熱煤之流通方向…亦可使熱煤流路”之熱煤流 於-定時間内變更。又’變更之時點可為定期亦可為不定 127812.doc •16- 200915382 期。再者，亦可監測噴射板5〇之溫度並調節熱煤之流量及 噴射板50之溫度。 又，作為熱媒示例之霧狀流體，可藉由分散於氣體中之 粒子狀之液體之潛熱提高冷卻能力，有效地冷卻噴射板 5〇又，霧狀流體，相比冷卻水等液體，可以大流量流到 熱媒流路55内。在該電漿處理裝置it，#由使用作為熱 媒之霧狀流體、且使熱媒之流通方向交互變更，亦可在電 漿施加時將噴射板50全體均一地保持於約200。(：，而不發 生噴射板5 0因熱變形而扭曲之問題。 因此，根據該電漿處理裝置1，流程中之條件變動變 ^安疋性亦比先前提高。即，譬如連續處理複數牧基板 之情形，即使在最初之第丨枚與溫度安定之後進行處理之 後續基板之間，處理結果亦無差別。又，即使在對於1枚 基板要求長時間處理之情形，喷射板5〇之溫度變動亦少， 又，由於向噴射板5〇之氣體之吸附、脫離未變動，因此長 時間處理期間亦可進行安定之處理β χ，由於如前所述溫 度反應良好，因此可比先前縮短進入處理之時間。 以上，說明了本發明之較佳實施形態之一例，但本發明 不限定於此處示例之形態。若為熟悉本技藝者，可明瞭在 申明專利範圍所記載之思想範疇内，可想到各種變更例或 修正例，對於該等，當然亦屬於本發明之技術範圍内。 譬如，雖然說明了複數個橫棧52之中，在配置於中央之 3根橫棧52之内部設置熱媒流路55之形態，但亦可在複數 個k棧52之中之一部分或全部之内部設置熱媒流路。 1278l2.doc 200915382 又既可將熱媒流路5 5設置於縱機5 i之内部，亦可在縱機 51與橫棧52之兩方之内部設置熱媒流路仏又，熱媒流路 55與處理氣體之流路56可以不必上下地配置，譬如，亦可 在縱棧51與橫棧52之—方設置熱媒流路55，在他方設置處 理氣體之流路56。X，雖然作為熱媒說明了使用霧狀流體 之形態，但作為在本發明中可作為熱媒而使用之流體，亦 示例有空氣、&等氣體（氣態）、水等。 又，在以上之實施形態中，說明了冷卻氣體供給構件之 情形，但在升溫氣體供給構件之情形，本發明同樣適用。 又，在以上說明之實施形態中，雖然以使用微波之電漿處 理襞置為例進行了說明，但不限定於此，當然對於使用高 頻率電壓之電漿處理裝置亦可適用本發明。又，在以上之 實施形態中，將本發明適用於進行成膜處理之電漿處理裝 置1，但本發明，亦可適用於成膜處理以外之基板處理， 譬如進行蝕刻處理之電漿處理裝置。又，本發明之電漿處 理裝置所處理之基板，可以為半導體晶圓、有機EL基板、 FPD(平型面板顯示器）用之基板等之任一項。 [實施例] 根據本發明，如圖6所示，熱媒在最初流到中央之熱媒 流路之後’流到兩側之2條熱媒流路之狀態，與如圖7所 不’熱媒在最初流到兩側之2條熱媒流路之後，流到中央 之熱媒流路之狀態，交互切換，冷卻由加熱器所加熱之噴 射板。又’作為熱媒係使用空氣。加熱器電力為約 500W、1分鐘ON/1分鐘〇FF。測定圖6中之3點a、b、 127812.doc 200915382 溫度。其結果，如圖8所示，各點A、B、c之溫度差△丁， 即使最大亦為20°C左右。 在比較例中，如圖6所示，固定於熱媒在最初流到中央 之熱媒流路之後、流到兩側之2條熱媒流路之狀態，未進 行熱媒之流通方向之切換》其結果，如圖9所示，各點A、 B、C之溫度差ΔΤ約為50t左右。 [產業上之可利用性] 本發明，可適用於在處理容器内生成電漿以處理基板之 f) 電毁處理。 【圖式簡單說明】 圖1係表示本實施形態之電漿處理裝置之構成的概略之 縱截面圖。 圖2係圖1之電漿處理裝置中所使用之喷射板之上視圖。 圖3係圖1之電漿處理裝置中所使用之噴射板之底視圖。 圖4係圖2中之Χ·Χ截面之擴大載面圖。 圖5係熱媒供給機構之說明圖。 I) 圖6係實施例說明圖，表示熱媒最初流動於中央之熱媒 流路後，流動於兩側之2條熱媒流路之狀態。 圖7係實施例說明圖，表示熱媒最初流動於兩側之2條熱 媒流路後，流動於中央之熱媒流路之狀態。 圖8係表示依照本發明而冷卻之喷射板之溫度分佈之圖 表。 圊9係表示藉由先前法而冷卻之噴射板之溫度分佈之圖 表0 127812.doc •19- 200915382 【主要元件符號說明】 C, 1 電漿處理裝置 2 處理容器 3 加熱台（載置台） 4 外部電源 5 加熱器 11 排氣裝置 12 排氣管 21 密封材 22 透過窗 23 徑向線縫隙天線 24 微縫 25 滯波板 26 外殼 27 熱媒流路 29 同軸導波管 29a 内側導體 29b 外管 31 微波供給裝置 32 矩形導波管 33 模型變換器 50 喷射板（氣體供給構件） 55 熱媒流路 56 處理氣體之流路 127812.doc -20- 200915382 60 熱媒供給機構 63 霧發生機構 64 供給配管 70 ' 71 切換閥 72 控制部 80 處理氣體吐出孔 81 處理氣體供給源 W 晶圓 127812.doc -21 -The heat medium supply unit 60 includes a flow rate adjustment unit (regulator) 62 that adjusts a carrier gas supplied from a gas supply source 61 such as a liquefied gas cylinder filled with a carrier gas such as a contracted air to a specific one. The flow rate; the mist generating portion 63, the liquid is dispersed in the gas by mixing a liquid such as water in a particulate form on a stage where the flow rate is adjusted by the flow rate adjusting device 62. A misty fluid. A supply 64 is connected to the mist generating portion 63, and a mist-like fluid as a heat medium can be supplied to the heat medium passage 5 in the discharge plate 50 via the supply pipe 64. Further, the heat medium is returned from the heat medium passage 55 in the injection plate 50 to the heat medium supply mechanism 6 via the return pipe 65. In the heat medium supply unit 6A, the liquid component in the heat medium returned via the return pipe 65 is "separated by the gas-liquid separator, and the separated liquid component is returned to the mist generating portion 63 via the storage portion 67. The liquid component in the heat medium is reused. The gas component separated by the gas separator is used. The two switching valves 7A and 71 serving as the flow path switching mechanism are interposed between the heat medium supply mechanism 60 and the spray plate 50. The switching valves 70 and 71 are composed of, for example, a three-way valve. In the switching, 71 is cut (four) 7 〇, and is connected to the supply pipe 64 of the heat medium supply mechanism 60. Further, the switching valve of the other side 71. The return pipe 65 connected to the heat medium supply means 6A. In addition, the heat medium flow path provided in the spray plate 5A will be described in detail, and the heat medium flow path 55a disposed in the center is provided. Two heat medium flow paths 55b are disposed on both sides in parallel, and are disposed at the central heat medium flow path 127812.doc 200915382 55a and at the front end of the two heat medium flow paths 55b disposed on both sides. The peripheral portion of the spray plate 50 is in contact with each other. The switching valves are 7〇, 7w The upper supply valve '〇71 is configured to be selectively connected to the heat medium flow path 55a and the heat medium flow path 55b. The switching valves 70 and 71 are simultaneously controlled by the control unit 72, and are switched on and off. The state of the heat medium flow path 55a, the switching valve 71 and the heat medium flow path 55b, and the state in which the switching valve 70 and the heat medium flow path 55b are turned on, and the switching valve 71 and the contact flow path W are turned on [selectively switching By the control of the control unit 72, the switching valve 70 and the heat medium flow path 55a are turned on, and the switching valve η and the heat medium flow path 55b are turned on, and the heat supplied from the supply pipe μ of the heat medium supply mechanism (9) is supplied. The medium flows to the central heat medium flow path, and flows to the two heat medium flow paths disposed on both sides after flowing through the peripheral portion of the spray plate %, and returns to the return pipe 65. The state of the heat medium supply means (9) - the aspect "on the switching of the switching valve 7" and the heat medium flow path, and the switching of the heat medium flow path 55a" is supplied by the supply pipe 64 of the heat medium supply means (10). The heat medium flows to the two heat medium flow paths initially disposed on both sides, and flows after the peripheral portion of the spray plate 50 merges. The heat medium flow path 55 5 a is disposed in the center, and further, $ η ❽, '', and returns to the state of the heat medium supply mechanism 60 by the returning officer 65. Thus, by the control of the control unit 72, The flow direction of the heat medium of the heat medium flow path 55 (55a, 55b) can be changed. The flow path 56 of the process gas which is not δ placed in the spray plate 50 is also similarly arranged in the center. The flow path 5" of the processing gas is provided with two flow paths 56b of the processing gas on both sides so that the knives are not parallel. A plurality of processing gas discharge holes are formed on the lower surface of the spray plate 50, and a flow path 56a of the process gas 127812.doc-14-200915382 formed in the spray plate 5A is connected to each of the processed rolling body discharge holes 80, 56b. The processing gas flow paths 56a and 56b are connected to a processing gas supply source 81 for supplying a gas for plasma processing. The processing gas supply source 81 stores a gas which is used as a gas for electricity processing, such as a gas and oxygen gas which is introduced into the nozzle plate 5 by the processing gas supply source 81 through the flow path 56 of the processing gas (56a, 56bJ). The gas for treatment is supplied to the processing container 2 from a plurality of processed rolling body discharge holes 8 。. The action of the plasma processing apparatus 1 configured as above is explained. For example, when the plasma film forming process is performed, as shown in Fig. 1, the wafer is first loaded into the processing container 2 and placed on the heating stage 3. Then, the exhaust pipe 12 is exhausted to reduce the inside of the processing container 2. Further, the processing gas discharge hole 8 is supplied to the processing container 2 by the processing gas for plasma deposition supplied from the processing gas supply source 81. Then, the microwave is applied to the device 31 to transmit An electric field is generated under the window 22, and the processing gas is plasma-formed, and the film formation process is performed on the wafer trade by the active species generated at that time. Next, after the film formation process is performed for a specific time, the microwave supply device 31 is terminated. Actuate, stop The processing gas is supplied into the processing container 2, the wafer W is carried out from the processing container 2, and the "systemic plasma film forming process is completed. In the electropolymerization film forming process, the ejection plate 50 is particularly caused by the heat generated by the electric forging. The temperature of the medium-to-region is increased. However, the plasma processing apparatus 1 is provided with a heat medium flow path 55 inside the horizontal stack 52 constituting the spray plate 50, and can be made of a mist by the heat medium supply mechanism 60. The heat medium formed by the fluid flows through the heat medium flow path 55 to cool the entire spray plate 50. Therefore, the temperature of the spray plate 127812.doc -15-200915382 50 can be maintained at a desired temperature while increasing the in-plane temperature. The uniformity suppresses the occurrence of deformation and distortion of the spray plate 50 at the time of the treatment. When the heat medium flows through the heat medium flow path 55 as described above, it is supplied by the heat medium supply unit 6 by the control of the control unit Μ. The heat medium is alternately switched, and flows to the heat medium flow path 55a disposed at the center, and flows to the two heat medium flow paths 551 disposed on both sides, and returns to the state of the heat medium supply mechanism. And after initially flowing to the two heat medium flow paths 55b disposed on both sides The flow to the heat medium flow path 55a disposed in the center and return to the heat medium supply mechanism is such that the heat medium of the heat medium flow path 55 of the spray plate can be circulated by the synchronous switching of the switching valves 70 and 71. The direction is reversed in the opposite direction. When the heat medium flows only in the single direction in the heat medium flow path 55, a temperature deviation occurs between the inlet side and the outlet side of the heat medium. The switching is performed at an appropriate timing to reverse the flow direction of the heat medium of the heat medium flow path 55. Thus, such temperature deviation can be suppressed. For example, in the case where the heat medium flows only in the single direction in the heat medium flow path 55' A temperature deviation from the inlet side and the outlet side of the heat medium is generated, and the temperature deviation is caused to be about C by reversing the flow direction of the heat medium of the heat medium flow path 55 at an appropriate timing. - The control of the control unit 72 of the control unit changes the direction of the hot coal flow to be switched. For example, when measuring the temperature of the hot coal to the population of the spray plate 5 and the outlet temperature, when the inlet temperature and the outlet temperature exceed a certain temperature difference , can be ^ hot coal circulation direction ... can also make the hot coal flow path "hot coal flow" changes within a fixed time. And 'change time can be regular or uncertain 127812.doc •16- 200915382 period. It is also possible to monitor the temperature of the spray plate 5 并 and adjust the flow rate of the hot coal and the temperature of the spray plate 50. Further, the mist fluid as an example of the heat medium can be improved by the latent heat of the particulate liquid dispersed in the gas. The cooling capacity effectively cools the spray plate 5 and the mist-like fluid can flow into the heat medium flow path 55 at a large flow rate compared to a liquid such as cooling water. In the plasma processing apparatus it, # is used as a heat medium. The mist-like fluid and the flow direction of the heat medium are alternately changed, and the entire spray plate 50 can be uniformly held at about 200 when the plasma is applied. (: The problem that the spray plate 50 is distorted by thermal deformation does not occur. Therefore, according to the plasma treatment When the condition is changed, the stability of the process is also improved. For example, if the substrate is continuously processed, even after the initial substrate and the subsequent substrate after the temperature is stabilized, the processing result is In addition, even when a long-term treatment is required for one substrate, the temperature fluctuation of the injection plate 5 is small, and since the adsorption and separation of the gas to the ejection plate 5 are not changed, the treatment is performed for a long time. During the period, it is also possible to carry out the stabilization treatment β χ. Since the temperature reaction is good as described above, the time for entering the treatment can be shortened compared with the previous one. An example of a preferred embodiment of the present invention has been described above, but the present invention is not limited thereto. For example, various modifications and alterations are conceivable within the scope of the invention as described in the claims. For example, although it is within the scope of the invention. In the case of the plurality of horizontal stacks 52, the heat medium flow path 55 is provided inside the three horizontal stacks 52 disposed in the center, but it may be in a plurality of k A heat medium flow path is provided inside or part of 52. 1278l2.doc 200915382 The heat medium flow path 5 5 may be disposed inside the vertical machine 5 i or in the vertical machine 51 and the horizontal stack 52 The heat medium flow path is disposed inside the square, and the heat medium flow path 55 and the processing gas flow path 56 are not necessarily arranged up and down. For example, the heat medium flow path 55 may be disposed in the vertical stack 51 and the horizontal stack 52. In the case where the gas flow path 56 is provided as the heat medium, the form of the mist-like fluid is used as the heat medium. However, as the fluid which can be used as the heat medium in the present invention, air such as air or gas is also exemplified. Further, in the above embodiment, the case where the cooling gas supply member is described is described. However, the present invention is also applicable to the case of heating the gas supply member. Further, in the above-described embodiment, the plasma processing apparatus using microwaves has been described as an example. However, the present invention is not limited thereto. Of course, the present invention can also be applied to a plasma processing apparatus using a high frequency voltage. Further, in the above embodiment, the present invention is applied to the plasma processing apparatus 1 that performs the film forming process. However, the present invention can also be applied to a substrate processing other than the film forming process, such as a plasma processing apparatus that performs an etching process. . Further, the substrate processed by the plasma processing apparatus of the present invention may be any one of a semiconductor wafer, an organic EL substrate, and a substrate for an FPD (flat panel display). [Embodiment] According to the present invention, as shown in Fig. 6, the state in which the heat medium flows to the two heat medium flow paths on both sides after initially flowing to the central heat medium flow path is not 'hot' as shown in FIG. After the media first flows to the two heat medium streams on both sides, it flows to the state of the central heat medium flow path, and switches alternately to cool the spray plate heated by the heater. Also, air is used as a heat medium. The heater power is about 500 W, 1 minute ON / 1 minute 〇 FF. The temperature of 3 points a, b, 127812.doc 200915382 in Fig. 6 was measured. As a result, as shown in Fig. 8, the temperature difference Δ of each of the points A, B, and c is about 20 ° C even at the maximum. In the comparative example, as shown in FIG. 6, the state in which the heat medium flows to the center of the heat medium flow path and flows to the two heat medium flow paths on both sides is not fixed, and the flow direction of the heat medium is not switched. As a result, as shown in FIG. 9, the temperature difference ΔΤ of each point A, B, and C is about 50 t. [Industrial Applicability] The present invention is applicable to f) electro-destruction treatment in which plasma is generated in a processing container to process a substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic longitudinal cross-sectional view showing the configuration of a plasma processing apparatus according to an embodiment of the present invention. Figure 2 is a top plan view of the spray plate used in the plasma processing apparatus of Figure 1. Figure 3 is a bottom plan view of the spray plate used in the plasma processing apparatus of Figure 1. Figure 4 is an enlarged elevational view of the cross section of the Χ·Χ in Figure 2. Fig. 5 is an explanatory view of a heat medium supply mechanism. I) Fig. 6 is an explanatory view showing an embodiment in which a heat medium first flows through a central heat medium flow path and then flows to two heat medium flow paths on both sides. Fig. 7 is an explanatory view showing an embodiment in which a heat medium first flows through two heat medium flow paths on both sides and flows through a central heat medium flow path. Figure 8 is a graph showing the temperature distribution of a spray plate cooled in accordance with the present invention.圊9 shows the temperature distribution of the spray plate cooled by the previous method. 0 127812.doc •19- 200915382 [Main component symbol description] C, 1 Plasma processing device 2 Processing vessel 3 Heating station (mounting table) 4 External power supply 5 Heater 11 Exhaust device 12 Exhaust pipe 21 Sealing material 22 Transmissive window 23 Radial line slot antenna 24 Micro slit 25 Delayed plate 26 Housing 27 Heat medium flow path 29 Coaxial waveguide 29a Inner conductor 29b Outer tube 31 Microwave supply device 32 Rectangular waveguide 33 Model converter 50 Injection plate (gas supply member) 55 Heat medium flow path 56 Process flow path for gas 127812.doc -20- 200915382 60 Heat medium supply mechanism 63 mist generation mechanism 64 supply Piping 70' 71 switching valve 72 control unit 80 processing gas discharge hole 81 processing gas supply source W wafer 127812.doc -21 -