KR100286330B1 - Fluid contact heater using padiation energy of semiconductor - Google Patents

Abstract

PURPOSE: A radiative heating apparatus of a fluid contact method used in a semiconductor fabricating process is provided to maintain constantly and stably a temperature of fluid by using a direct heating method and an indirect heating method. CONSTITUTION: A tube(31) is used for inserting a process fluid into a chamber. An external heating container(47) is installed at one side of the tube(31). An internal heating container(45) is installed at an inside of the external heating container(47). A transparent tube(42) is installed in an inside of the internal heating container(45). A main heater(41) is installed in an inside of the transparent tube(42) in order to heat directly the fluid. A main heater terminal(34) is connected with the main heater(41). A multitude of transparent tube outflow hole(43) is installed on one side of the transparent tube(42) in order to discharge the heated fluid into the internal heating container(45). A multitude of internal heating container hole(46) is formed on one side of the internal heating container(45) in order to discharge the heated fluid to the external heating container(47). An external heater(40) is installed around the external heating container(47).

Description

FLUID CONTACT HEATER USING PADIATION ENERGY OF SEMICONDUCTOR}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fluid-contact radiation heating apparatus of a semiconductor, and in particular, by raising the temperature of a gas flowing into a vaporization part of a liquid source, a temperature drop of a heated source is prevented, thereby activating a source and liquefying a source that is vaporized. By preventing phenomena, the gasification efficiency of the source is improved, and the heated gas is introduced to supply sufficient reaction energy during the actual reaction. Secondary heating is possible by utilizing the radiant heat, and the efficiency is doubled. Heating and mixing is possible in the heating part and secondary heating using radiant heat goes through the steps of temperature raising, mixing and temperature stabilization, and final temperature raising and stabilization to the temperature required for the third heating can be achieved, thus ensuring the temperature uniformity of the fluid. The present invention relates to a fluid contact radiation heating apparatus for semiconductors.

In addition to the chemical vapor deposition process of semiconductors, it is necessary to inject a reaction by heating a fluid in other processes such as etching or general industrial equipment. In fact, the semiconductor chemical vapor deposition process has a goal to increase the deposition rate and to be able to process at a relatively low temperature. In order to satisfy this, it is necessary to provide various support in terms of hardware. One of them is to support the process by heating the gas. The current method is to heat the gas by heating the gas tube. In order to transfer the heat source to the gas because the gas tube is heated from the outside, not only temperature gradient occurs due to the use of a heat transfer medium called a tube, It becomes unstable and hard to satisfy the maximum temperature that can be raised. Therefore, an object of the present invention is to support the process development through the development of hardware that can control the temperature of the gas more uniformly, improve the thermal efficiency, and increase the elevated temperature using a fluid contact heater.

In the related art, in the semiconductor equipment such as chemical vapor deposition and etching, a process source, a carry gas, an oxygen gas, and the like are introduced into the chamber 10 at a temperature of 100 ° C. or lower as shown in FIG. 1. Then, the thermal energy or plasma is supplied from the lower part or the other part on the target wafer W through the gas injector 1 to activate the reaction. In the figure, reference numeral 2 denotes a heat supply unit, and 3 denotes an exhaust line.

In a special case, when it is necessary to increase the temperature of the incoming source, the source tank is heated, and the heater 21 is wound around the outer wall of the tube 20, which is a moving path of the source, as shown in FIG. A method of introducing heated sources into the chamber 10 is used. There are many ways to heat a fluid tube, but the representative type is particularly the type described below.

The first type is simply applied to the straight tube by heating the gas tube by wrapping a heater for heating up to 300 ° C. on the outer wall of the tube. In the second type, as shown in FIGS. 2A and 2B, the heater 21 is wound around the tube 20 in a spring shape in a manner of supplying thermal energy to the fluid using a small space so that the fluid flows inside. The third type is a method of heating a gas in a direct contact manner by installing a small heater container 22 in the tube 20 ', as shown in FIG.

The operation of the prior art is as follows. When a reaction occurs in a process reactor, a gas or source at room temperature is transferred onto the wafer (W), and then an energy source is supplied on the wafer to activate the sources, resulting in an etching or deposition reaction. The sources may be heated. In order to maintain the energy of these heated sources, the gas tubes 20 are heated to a temperature of 100 ° C or less. The first type wraps a heater to the outside to supply heat energy to the fluid flowing in the straight tube and heats it to a predetermined temperature so that heat transferred to the tube is transferred to the fluid to maintain the temperature of the source or heat the gas. The second type has the advantage of heating the fluid as much as possible by using a small space by winding the tube 20 in a spring shape and winding the heater 21 on its outer wall. In the heating method, heat energy generated from the heater 21 is transferred to the tube 20, and heat energy is transferred from the tube 20 to the fluid part. The third type is an in-line heating device, which is a method of directly heating a fluid by connecting a heater vessel 22 having a heater therebetween between the tubes 20 '.

However, the prior art has the following problems. The first type is a method of heating a fluid by installing a heater in a generally blown state, which consumes a lot of heaters and requires a lot of space. The second type complements the first type, and has the advantage of providing high heat efficiency of the heater 21 and supplying a large amount of heat in a small space. However, the second type is not easy to be attached and detached, and is easily removable. Heater is difficult to heat the fluid to more than 300 ℃, the third type is relatively expensive, because it is a method of heating the fluid in contact with the heater container 22, the heat transfer rate is good but the efficiency of the heater because it is transmitted to the flowing fluid There is a relatively low problem.

Accordingly, an object of the present invention is devised in view of the above problems, the temperature of the heated source is prevented by increasing the temperature of the gas flowing into the vaporization portion of the liquid source to help the activation of the source and vaporized source Improve the vaporization efficiency of the source by preventing the liquefaction of the source, and by supplying the heated gas to facilitate the supply of sufficient reaction energy during the actual reaction, by utilizing the radiant heat, the secondary heating is possible to double the efficiency, The heating and mixing is possible in the primary heating section, and the secondary heating using radiant heat is performed to increase the temperature, mix and stabilize the temperature, and achieve final temperature raising and stabilization to the temperature required for the third heating. The present invention provides a fluid contact radiation heating apparatus for semiconductors.

1 is a cross-sectional view showing a gas flow in a process reactor according to the prior art.

Figure 2a is a cross-sectional view showing an example of the gas tube heating method according to the prior art.

Figure 2b is a plan view showing an example of the gas tube heating method according to the prior art.

3 is a cross-sectional view showing another example of a gas tube heating method according to the related art.

Figure 4 is a cross-sectional view showing the gas flow in the process reactor according to the present invention.

5 is a sectional view showing a fluid contact radiation heating apparatus according to the present invention.

6A is a cross-sectional view showing a main heater according to the present invention.

Figure 6b is a plan view showing a main heater according to the present invention.

Figure 7 is a side view showing a transparent tube according to the present invention.

8 is a perspective view showing an internal heating container according to the present invention.

9 is a cross-sectional view showing an external heating vessel and an external heater according to the present invention.

10 is a cross-sectional view showing another embodiment of the external heating vessel and the external heater according to the present invention.

11 is a block diagram showing the overall configuration of a fluid contact radiation heating apparatus according to the present invention.

(Explanation of symbols for the main parts of the drawing)

31; Tube 32; Line heater

33; Insulation 34; Main heater terminal

35; First thermocouple 36; Second Thermocouple

37; Plate heater 38; flange

40; External heater 41; Main heater

42; Transparent tube 43; Clear Tube Outflow Hole

44; Pedestal 45; Internal heating container

46; Internal heating vessel hole 47; External heating container

An object of the present invention is a tube for introducing a process fluid into the chamber, an external heating vessel installed on one side of the tube, an internal heating vessel installed inside the external heating vessel, and installed inside the internal heating vessel. A transparent tube, a main heater installed in the transparent tube to directly heat the fluid flowing into the transparent tube, a main heater terminal connected to the main heater and extending out of the external heating container, and a plurality of transparent tubes on one side of the transparent tube; And a plurality of transparent tube outlet holes formed so that the fluid heated by the main heater flows out into the internal heating container, and a plurality of transparent tube outlet holes are formed on one side of the internal heating container so that the fluid receiving the radiant heat of the transparent tube flows into the external heating container. An inner heating vessel hole and an outer heater installed around the outer heating vessel to finally heat the fluid in the outer heating vessel. It is achieved by a fluid-contact radiation heating apparatus of a semiconductor, characterized in that the flange is installed on the upper surface of the inner and outer heating container to prevent the outflow of the fluid.

Hereinafter, a fluid-contact radiation heating apparatus for semiconductors according to the present invention will be described according to the embodiment shown in the accompanying drawings.

Figure 4 is a cross-sectional view showing a gas flow in the process reactor according to the present invention, Figure 5 is a cross-sectional view showing a fluid contact radiation heating apparatus according to the present invention, Figure 6a is a cross-sectional view showing a main heater according to the present invention, Figure 6b is a plan view showing a main heater according to the present invention, Figure 7 is a side view showing a transparent tube according to the present invention, Figure 8 is a perspective view showing an internal heating container according to the present invention, Figure 9 is according to the present invention 10 is a cross-sectional view illustrating an external heating vessel and an external heater, and FIG. 10 is a cross-sectional view showing another embodiment of the external heating vessel and the external heater according to the present invention, and FIG. 11 is an overall configuration of a fluid contact radiation heating apparatus according to the present invention. Each block diagram is shown.

As shown in the drawing, the fluid-contact radiation heating apparatus for semiconductors according to the present invention includes a tube 31 for introducing a process fluid into the chamber 10 and an external heating vessel 47 provided at one side of the tube 31. ), An inner heating container 45 provided inside the outer heating container 47, a transparent tube 42 installed inside the inner heating container 45, and a inside of the transparent tube 42. The main heater 41 for directly heating the fluid flowing into the transparent tube 42, the main heater terminal 34 connected to the main heater 41 and extending out of the external heating container 47, and the transparent tube. A plurality of transparent tube outlet holes 43 are formed at one side of the 42 to allow the fluid heated by the main heater 41 to flow into the internal heating container 45, and at one side of the internal heating container 45. Internal heating for forming a plurality of the fluid received the radiant heat of the transparent tube 42 flows out to the external heating container 47 It is configured to include a hole 46, and the outer heater 40 for the final heat the fluid in the external heating chamber 47 installed on the outer circumference of the heating chamber 47.

The flange 38 is installed on the upper and outer surfaces of the inner and outer heating containers 45 and 47 to prevent the fluid from leaking out, and the external heater of the flange 38 and the outer heating container 47 is installed. 40) to increase the thermal efficiency by installing a heat insulating material 33 around the plate, and to install a plate heater 37 between the upper surface of the flange 38 and the heat insulating material 33 so that heat generated from the inside is not discharged to the outside. .

The base of the heat-resistant and high thermal conductivity ceramic material 44 is installed in the lower portion of the transparent tube 42 to transfer heat to the external heating vessel 47, the material of the transparent tube 42 is transparent and thermal conductivity It is set as high quartz.

The external heater 40 is disposed horizontally or vertically and installed around the external heating container 47, and the line heater 32 is installed outside the tube 31 for introducing the process fluid to the tube 31. Maintain a temperature of the fluid flowing inside, by connecting the first thermocouple 35 to one side of the main heater 41, to measure the temperature of the main heater 41, the external heating vessel 47 By installing a second thermocouple 36 therein, the heater is controlled so as to measure the temperature of the heating fluid flowing out through the external heating container 47.

The operation and effect of the fluid-contact radiation heating apparatus of the semiconductor according to the present invention configured as described above will be described.

Carry gas and oxygen gas flowing through the gas line, which is a mixer line, are primarily brought into contact with the main heater 41 and heated. In the heated state, as shown in FIG. 5, the maximum amount of heat in real time is supplied to the fluid during the flow of the fluid, and the heated fluids are evenly mixed. Fluids heated in the first region Z1 flow out to the second region Z2 through the transparent tube outlet hole 43 positioned below the transparent tube 42 as shown in FIG. 7. In the second region Z2, the radiant heat of the main heater 41 is transmitted through the transparent tube 42 to heat the fluid secondly. The heated fluids are more stably maintained and flow out to the third region through the internal heating vessel hole 46 located above the internal heating vessel 45 as shown in FIG. 8. In order to stabilize the spilled fluid and supply additional heat, a vertical or horizontal external heater 40 located outside the external heating container 47 is heated as shown in FIGS. 9 and 10, and the external heater 40 is heated. The fluids heated by the mixture are mixed with the process source and introduced into the chamber 10.

As described above, the fluid-contact radiation heating apparatus for semiconductors according to the present invention adopts and combines both direct heating and indirect heating by convection, thereby raising the temperature of the gas flowing into the vaporization part of the liquid source. The temperature drop of the heated source is prevented and thus, the activation of the source is prevented and the liquefaction of the vaporized sources is prevented, and the heated carry gas and oxygen gas are introduced to reduce the temperature of the heated source when the source is mixed in the mixing section. By supplying sufficient reaction energy during actual reaction by preventing and maintaining activating energy, and by utilizing radiant heat, secondary heating is possible, and the efficiency is doubled. Compared with external heating method, direct heating type, not indirect heating method. The efficiency is excellent, and heating and mixing are possible in the primary heating part. Subjected to secondary heating using the Four-row is subjected to elevated temperature and mixing, temperature stabilization step, is led to a final temperature rise and stabilize to the required temperature at the time of the third heating has the effect that the temperature uniformity of the fluid ever obtained.

Claims (11)

A tube for introducing a process fluid into the chamber, an external heating container installed on one side of the tube, an internal heating container installed inside the external heating container, a transparent tube installed inside the internal heating container, A main heater installed in the transparent tube and directly heating the fluid flowing into the transparent tube, a main heater terminal connected to the main heater and extending out of the external heating container, and formed on the one side of the transparent tube by a main heater A transparent tube outlet hole allowing the heated fluid to flow out into the internal heating container, and an internal heating container hole formed in one side of the internal heating container so that the fluid receiving the radiant heat of the transparent tube flows into the external heating container; It is installed around the outer heating vessel and comprises an external heater for final heating of the fluid in the outer heating vessel, the inner and outer of the heating vessel A fluid contact type radiant heating device for semiconductors, characterized in that a flange is installed on a top surface to prevent a fluid from flowing out. The device of claim 1, wherein thermal insulation is installed around the flange and the outer heater of the outer heating vessel to increase thermal efficiency. The semiconductor device of claim 2, wherein a plate heater is installed between the flange upper surface and the heat insulating material so that heat generated therein is not discharged to the outside. The semiconductor device of claim 1, wherein a pedestal made of heat and high thermal conductivity material is installed under the transparent tube to transfer heat to an external heating vessel. 5. The fluid contact type radiant heating apparatus of claim 4, wherein the base is made of ceramics. The method of claim 1, wherein the material of the transparent tube is a transparent, heat-conductive radiation heating device of a semiconductor, characterized in that the high thermal conductivity quartz. 2. The fluid contact type radiant heating apparatus according to claim 1, wherein the external heater is arranged horizontally and installed around the external heating container. The fluid contact type radiant heating apparatus according to claim 1, wherein the external heater is disposed vertically and installed around the external heating container. The semiconductor device of claim 1, wherein a line heater is installed outside the tube into which the process fluid is introduced to maintain a temperature of the fluid flowing into the tube. The device of claim 1, wherein the first thermocouple is connected to one side of the main heater to measure the temperature of the main heater. The semiconductor fluid contact type radiant heating apparatus according to claim 1, wherein a second thermocouple is installed in the external heating container to measure a temperature of the heating fluid flowing out through the external heating container.