JP5302834B2 - Plasma processing equipment - Google Patents

Plasma processing equipment Download PDF

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JP5302834B2
JP5302834B2 JP2009218965A JP2009218965A JP5302834B2 JP 5302834 B2 JP5302834 B2 JP 5302834B2 JP 2009218965 A JP2009218965 A JP 2009218965A JP 2009218965 A JP2009218965 A JP 2009218965A JP 5302834 B2 JP5302834 B2 JP 5302834B2
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plate
cooling
gas
heat transfer
chamber
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JP2011071187A (en
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貞次 若松
厚治 亀崎
正志 菊池
洋介 神保
謙次 江藤
隆之 佐々木
寛人 内田
伸 浅利
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株式会社アルバック
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma processing device suppressing temperature rise in a processing chamber. <P>SOLUTION: The plasma processing device 1 includes: a processing chamber 3 structured to introduce a material gas and allow an A.C. voltage to be applied; and a shower plate 5 for partitioning the inside of the processing chamber into a gas introduction chamber 32 for introducing the material gas therein, and a reaction chamber 31 for arranging a substrate 10 therein, wherein a cooling device 50 is arranged in the gas introduction chamber. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a plasma processing apparatus.

  2. Description of the Related Art Conventionally, a plasma processing apparatus (film forming apparatus) that decomposes a source gas using plasma and forms a thin film on a film formation surface of a substrate is known (see, for example, Patent Document 1). As shown in FIG. 9, a conventional plasma processing apparatus 101 includes a film formation space (reaction chamber) 131 in which a substrate 110 is arranged by a shower plate 105 in which a space in a processing chamber 103 has a plurality of jets 106, for example. And a gas introduction chamber 132 for introducing a source gas (film formation gas). Further, a high frequency power source 109 is connected to the processing chamber 103, and the shower plate 105 functions as a cathode electrode.

  Then, the source gas introduced into the gas introduction chamber 132 is ejected from the respective ejection ports 106 of the shower plate 105 into the film formation space 131. At this time, plasma is generated in the film formation space 131, and the source gas decomposed by the plasma reaches the film formation surface 110a of the substrate 110, whereby a desired film is formed.

JP-A-10-310866

By the way, when batch processing is performed to continuously form films on the deposition surfaces 110a of the plurality of substrates 110 using the above-described plasma processing apparatus 101, the temperature in the processing chamber 103 gradually increases. Therefore, there is a problem that the quality of the film is lowered. Further, when the temperature in the processing chamber 103 is different, the quality of the film is different for each substrate 110, and there is a problem that a performance error is caused for each substrate 110.
Furthermore, in the conventional plasma processing apparatus, the cooling pipe for suppressing the temperature rise is provided in the wall portion of the housing of the processing chamber 103. In this case, the peripheral portion of the shower plate 105 can be cooled, It was difficult to cool the vicinity of the central portion of the shower plate 105 in plan view.

  Therefore, the present invention has been made in view of the above-described circumstances, and provides a plasma processing apparatus capable of suppressing a temperature rise in a processing chamber.

The invention described in claim 1 is a reaction chamber in which a source gas is introduced and an AC voltage can be applied, a gas introduction chamber into which the source gas is introduced, and a reaction in which a substrate is disposed. A plasma processing apparatus comprising a chamber and a shower plate partitioned into
A cooling device is provided in the gas introduction chamber ,
The cooling device includes a cooling pipe through which cooling water can flow, a cooling plate for supporting the cooling pipe, and a heat transfer plate disposed between the cooling plate and the shower plate, The cooling plate and the heat transfer plate are configured so that a gas flow path for allowing the source gas to pass therethrough is formed, and the flow rate of the cooling water flowing through the cooling pipe is variable.
The through hole α of the heat transfer plate is formed so that one through hole α corresponds to a plurality of gas outlets of the shower plate, and the cooling plate includes the heat transfer plate. A plurality of through holes β are formed at positions corresponding to the through holes α .

According to the first aspect of the present invention, it is possible to suppress the temperature inside the processing chamber from being increased by the cooling device. Therefore, it is possible to suppress deterioration of the film quality when the film is continuously formed on the substrate.
Further, by flowing cooling water through the cooling pipe, heat generated in the processing chamber can be absorbed. Therefore, the temperature rise in the processing chamber can be suppressed. Further, by arranging the heat transfer plate between the shower plate and the cooling plate, the heat of the shower plate can be absorbed more effectively.
Furthermore, by changing the flow rate of the cooling water, the temperature in the processing chamber can be kept substantially constant. Therefore, when the film is continuously formed on the substrate, the temperature in the reaction chamber can be kept substantially uniform, so that the film quality can be kept substantially uniform.
More specifically, the through hole β of the cooling plate is positioned upstream of the through hole α of the heat transfer plate, and the gas outlet of the shower plate is positioned downstream of the through hole α of the heat transfer plate. The gas that has passed through is mixed in the through hole α of the heat transfer plate, so that the temperature of the gas becomes uniform. Thereafter, the gas whose temperature has been made uniform passes through the gas outlet of the shower plate and is jetted into the reaction chamber in which the substrate is arranged (paragraph 22, FIGS. 1 and 2). That is, the through hole α of the heat transfer plate functions as a part of the gas flow path of the source gas, and the portion where the through hole α is not formed is in contact with the shower plate. It can function as a heat transfer section that absorbs the heat of the heat and transfers the heat to the cooling plate (paragraph 25).
Therefore, according to the first aspect of the present invention, not only the peripheral portion of the shower plate in the plan view but also the central portion in the plan view can be uniformly cooled.

The invention described in claim 2 includes a plurality of gas outlet openings formed in the shower plate communicating with the through hole α of the heat transfer plate, and a plurality of through holes β formed in the cooling plate. The openings are arranged at positions different from each other when viewed from the overlapping direction of the cooling plate, the heat transfer plate, and the shower plate .

According to the second aspect of the present invention, the opening of the gas outlet and the cooling plate are provided so as to communicate with the through hole α of the heat transfer plate and to correspond to each other through the through hole α of the heat transfer plate. Through holes β are arranged at different positions as viewed from the overlapping direction of the cooling plate, the heat transfer plate and the shower plate (FIGS. 2 to 5). The gas can be stably guided without depending on the gas flow rate so as to pass through the gas outlet of the shower plate after being mixed inside the through hole α of the heat transfer plate and the temperature of the gas is made uniform. it can. Therefore, not only the peripheral edge part of the shower plate in plan view but also the vicinity of the central part in plan view can be cooled uniformly and stably.

The invention described in claim 3 includes a plurality of gas outlet openings formed in the shower plate that communicate with the through hole α of the heat transfer plate, and a plurality of through holes β formed in the cooling plate. This opening is characterized in that the opening of the gas outlet is distributed in a wider range with respect to the through hole α than the opening of the through hole β .

According to the invention described in claim 3, the opening of the gas jet port formed in the shower plate is more open to the through hole α of the heat transfer plate than the opening of the through hole β formed in the cooling plate. Therefore, the gas that has passed through the cooling plate is mixed inside the through hole α of the heat transfer plate, and the temperature of the gas is made uniform. Thereafter, the gas whose temperature has been made uniform is guided to spread (over its corners) inside each through hole α of the heat transfer plate. Therefore, not only the peripheral edge part of the shower plate in plan view but also the vicinity of the central part in plan view can be cooled uniformly and stably.

  The invention described in claim 4 is configured such that the cooling plate can be divided into a first cooling plate and a second cooling plate, and the cooling plate is interposed between the first cooling plate and the second cooling plate. It is characterized by being able to arrange piping.

  According to the invention described in claim 4, the cooling pipe can be reliably supported and the maintainability can be improved. Further, since the first cooling plate and the second cooling plate are arranged so as to cover the cooling pipe, a large heat absorption area can be secured. Therefore, the temperature rise in the processing chamber can be suppressed.

  ADVANTAGE OF THE INVENTION According to this invention, it can suppress that the temperature in a process chamber rises with a cooling device. Therefore, it is possible to suppress deterioration of the film quality when the film is continuously formed on the substrate.

It is a schematic block diagram of the plasma processing apparatus in embodiment of this invention. It is the A section enlarged view of FIG. It is a fragmentary perspective view of the heat exchanger plate in the embodiment of the present invention. It is a fragmentary top view explaining the positional relationship of the gas jet nozzle of the shower plate and the through-hole of a heat exchanger plate in embodiment of this invention. It is a fragmentary perspective view of the cooling plate in the embodiment of the present invention. It is a fragmentary top view explaining the positional relationship of the through-hole of the heat exchanger plate and the through-hole of a cooling plate in embodiment of this invention. It is a top view of the cooling device in the embodiment of the present invention, and is a figure explaining the piping path of cooling piping. It is sectional drawing which follows the BB line of FIG. It is a schematic block diagram of the conventional plasma processing apparatus.

A plasma processing apparatus according to an embodiment of the present invention will be described with reference to FIGS. In the drawings used for the following description, the scale of each member is appropriately changed in order to make each member a recognizable size.
FIG. 1 is a schematic configuration diagram of a plasma processing apparatus 1 in the present embodiment.
As shown in FIG. 1, a plasma processing apparatus 1 that performs a plasma CVD method includes a processing chamber 3 that includes a vacuum chamber 2 and an electrode flange 4 with an insulating flange 81 interposed therebetween. The interior of the processing chamber 3 is partitioned into a reaction chamber 31 in which the substrate 10 is disposed by a shower plate 5 and a gas introduction chamber 32 into which a source gas is introduced.

  A support column 25 is disposed below the vacuum chamber 2 so as to pass through the bottom 11 of the vacuum chamber 2, and a plate-like heater 15 is connected to the tip of the support column 25 on the inner side of the vacuum chamber 2. Yes. Further, an exhaust pipe 27 is connected to the vacuum chamber 2. The exhaust pipe 27 is provided with a vacuum pump 28 so that the vacuum chamber 2 can be evacuated.

  The support column 25 is connected to an elevating mechanism (not shown) provided outside the vacuum chamber 2 and is configured to be movable in the vertical direction. That is, the heater 15 connected to the tip of the support column 25 is configured to be able to move up and down in the vertical direction, so that the substrate 10 can be easily taken in and out. Note that a bellows (not shown) for covering the column 25 is provided on the periphery of the column 25 outside the vacuum chamber 2.

  The electrode flange 4 is formed in a top container shape, and a shower plate 5 is attached to the opening so as to close it. Thereby, a gas introduction chamber 32 is formed between the electrode flange 4 and the shower plate 5. Further, the electrode flange 4 is provided with a gas introduction port 42 in an upper wall 41 facing the shower plate 5, and one end of the gas introduction pipe 7 is connected thereto. A source gas supply unit 21 provided outside the vacuum chamber 2 is connected to the other end of the gas introduction pipe 7, and a source gas can be supplied from the source gas supply unit 21 to the gas introduction chamber 32. It is like that.

  The electrode flange 4 and the shower plate 5 are each made of a conductive material, and the electrode flange 4 is connected to an RF power source (high frequency power source) 9 provided outside the vacuum chamber 2. That is, the electrode flange 4 and the shower plate 5 are configured as the cathode electrode 71. For example, a high frequency voltage of 27.12 MHz can be applied to the shower plate 5 from the RF power source 9.

  The shower plate 5 is formed with a plurality of gas ejection ports 6. The source gas introduced into the gas introduction chamber 32 is configured to be ejected from the gas ejection port 6 to the reaction chamber 31 in the vacuum chamber 2.

  Here, a cooling device 50 is provided in the gas introduction chamber 32. The cooling device 50 is laid on the heat transfer plate 51 placed on the shower plate 5, the cooling plate 52 placed on the heat transfer plate 51, the inside of the cooling plate 52, and the outside of the processing chamber 3. A cooling pipe 53, a circulation pump 54 for circulating the cooling water in the cooling pipe 53, and a valve 55 for adjusting the flow rate of the cooling water flowing through the cooling pipe 53 are provided.

As shown in FIGS. 2 and 3, the heat transfer plate 51 is a metal plate-like member that is formed of, for example, aluminum on aluminum and has substantially the same planar shape as the shower plate 5. The heat transfer plate 51 is in contact with the surface of the shower plate 5 on the gas introduction chamber 32 side. A plurality of through holes (also referred to as through holes α) 61 are formed in the heat transfer plate 51 at positions corresponding to the gas outlets 6 of the shower plate 5.

  As shown in FIG. 4, the through hole 61 of the heat transfer plate 51 is formed in, for example, a rectangular shape, and is formed so that one through hole 61 corresponds to the nine gas ejection ports 6. Has been. That is, since the through hole 61 functions as a part of the gas flow path of the source gas and the portion where the through hole 61 is not formed is in contact with the shower plate 5, the heat transfer plate 51 is connected to the shower plate 5. It functions as a heat transfer section that absorbs heat and transfers the heat to the cooling plate 52. In addition, in FIG. 4, although the heat-transfer part (area | region other than the through-hole 61) of the heat-transfer plate 51 is arrange | positioned so that a part of gas ejection port 6 may be obstruct | occluded in planar view, the area of a heat-transfer part is reduced. It is configured to ensure. Even with this configuration, a predetermined amount of source gas can be ejected from the gas ejection port 6.

  As shown in FIGS. 2 and 5, the cooling plate 52 is a metal plate-like member made of, for example, aluminum and having substantially the same planar shape as the shower plate 5 and the heat transfer plate 51. The cooling plate 52 is further divided into two sheets, and includes a first cooling plate 52A placed on the heat transfer plate 51 and a second cooling plate 52B placed on the first cooling plate 52A. Have. A cooling pipe 53 is laid between the first cooling plate 52A and the second cooling plate 52B.

The first cooling plate 52A and the second cooling plate 52B are formed with a plurality of through holes (also referred to as through holes β) 62 at positions corresponding to the through holes 61 of the heat transfer plate 51. As shown in FIG. 6, the through holes 62 of the cooling plate 52 (the first cooling plate 52 </ b> A and the second cooling plate 52 </ b> B) are formed in a cylindrical shape, for example, and two through holes 61 are provided for one through hole 61. The through holes 62 are formed so as to correspond. That is, the through hole 62 functions as a part of the gas flow path of the raw material gas, and the portion where the through hole 62 is not formed functions as a heat transfer portion that can absorb the heat of the heat transfer plate 51.
That is, as shown in FIGS. 1 to 5, in the plasma processing apparatus of the present invention, the through hole 61 (through hole α) of the heat transfer plate 51 is communicated with the through hole 61 (through hole α) of the heat transfer plate 51. ), The opening of the gas outlet 6 of the shower plate 5 and the through hole 62 (through hole β) of the cooling plate 52 are provided so as to correspond to each other through the cooling plate 52, the heat transfer plate 51, and the shower plate. 5 are arranged at different positions as seen from the overlapping direction. Thereby, the gas that has passed through the cooling plate 52 is mixed inside the through hole 61 (through hole α) of the heat transfer plate 51, and after the temperature of the gas has been made uniform, it passes through the gas outlet 6 of the shower plate 5. As described above, the gas can be stably guided without depending on the gas flow rate. Therefore, not only the peripheral portion of the shower plate 5 in plan view but also the vicinity of the central portion in plan view can be cooled uniformly and stably.
Moreover, as shown in FIGS. 1-5, in the plasma processing apparatus of this invention, the several gas jet nozzle 6 formed in the shower plate 5 connected to the through-hole 61 (through-hole (alpha)) of the heat exchanger plate 51 is shown. And the openings of the plurality of through holes 62 (through holes β) formed in the cooling plate 52 are the openings of the gas outlet 6 and the openings of the through holes 62 (through holes β). Therefore, it is distributed in a wide range with respect to the through hole 61 (through hole α). Thereby, the gas which passed the cooling plate 52 is mixed inside the through-hole 61 (through-hole (alpha)) of the heat exchanger plate 51, and the temperature of gas is equalized. Thereafter, the gas whose temperature has been made uniform is guided so as to spread (spread across the corners) inside each through hole 61 (through hole α) of the heat transfer plate 51. Therefore, not only the peripheral edge part of the shower plate in plan view but also the vicinity of the central part in plan view can be cooled uniformly and stably.


  As shown in FIGS. 1, 7, and 8, the cooling pipe 53 is formed of, for example, a SUS pipe, and is laid between the first cooling plate 52 </ b> A and the second cooling plate 52 </ b> B, and the processing chamber 3. It is configured in a loop shape led to the outside. Outside the processing chamber 3, the cooling pipe 53 is provided with a circulation pump 54 and a valve 55. Pure water can be circulated by supplying pure water, for example, as cooling water into the cooling pipe 53 and driving the circulation pump 54. Further, by adjusting the opening of the valve 55, the flow rate of pure water circulating in the cooling pipe 53 can be adjusted, and the inside of the processing chamber 3 can be maintained at a predetermined temperature. . The temperature of pure water is preferably set between about 30 ° C. and 80 ° C.

  In order to maintain the inside of the processing chamber 3 at a predetermined temperature, for example, a thermometer (not shown) is provided in the processing chamber 3, and the opening degree of the valve 55 and the output of the circulation pump 54 are adjusted from the value of the thermometer. What is necessary is just to comprise. In addition, a heat exchange device (not shown) is provided outside the processing chamber 3, the cooling water that has come out of the processing chamber 3 is heat-exchanged (cooled) in the heat exchange device, and the heat-exchanged cooling water is processed again. It may be configured to flow into the chamber 3. Further, the cooling water may not be circulated, and new cooling water may be always supplied into the processing chamber 3.

  The cooling pipe 53 enters between the first cooling plate 52A and the second cooling plate 52B from the inlet 63 formed on the side surface of the cooling plate 52 in a plan view, and substantially wraps around the peripheral edge of the cooling plate 52 in a plan view. Then, after laying so as to go around the central part, it returns again to the peripheral part on the opposite side to the peripheral part described above, and comes out from the discharge port 64 formed in the vicinity of the inflow port 63 after making a substantially half turn. It is configured as follows. The cooling pipe 53 has a piping path so as to avoid the through hole 62.

  Returning to FIG. 1, another gas introduction pipe 8 is connected to the reaction chamber 31 of the vacuum chamber 2. The gas introduction pipe 8 is provided with a fluorine gas supply unit 22 and a radical source 23. The fluorine gas supplied from the fluorine gas supply unit 22 is decomposed by the radical source 23, and the resulting fluorine radicals are converted into the vacuum chamber 2. It is configured to be supplied to the reaction chamber 31 inside.

  The heater 15 is a plate-like member having a flat upper surface, and the substrate 10 can be placed on the upper surface. The heater 15 functions as a ground electrode, that is, an anode electrode 72. For this reason, it is made of, for example, an aluminum alloy having conductivity.

  When the substrate 10 is disposed on the heater 15, the substrate 10 and the shower plate 5 are configured to be positioned close to each other and in parallel. Further, the separation distance between the film formation surface 10a of the substrate 10 and the shower plate 5 is configured to be variable. When the source gas is ejected from the gas ejection port 6 in a state where the substrate 10 is disposed on the heater 15, the source gas is blown onto the film formation surface 10 a of the substrate 10.

  The heater 15 includes a heater wire 16 therein and has a temperature control function. The heater wire 16 protrudes from the bottom surface 17 at a substantially central portion in a plan view of the heater 15, is inserted through the inside of the support column 25, and is guided to the outside of the vacuum chamber 2. Further, the heater wire 16 is connected to a power source (not shown) outside the vacuum chamber 2 so that the temperature is adjusted. The heater 15 can adjust the temperature of the substrate 10.

  Further, a plurality of grounds 30 are arranged on the outer peripheral edge of the heater 15 at substantially equal intervals so as to connect between the heater 15 and the vacuum chamber 2. The ground 30 is made of, for example, a nickel-based alloy or an aluminum alloy.

Next, a case where a film is formed on the film formation surface 10a of the substrate 10 using the plasma processing apparatus 1 will be described.
First, the vacuum chamber 2 is evacuated by the vacuum pump 28. With the vacuum chamber 2 maintained in a vacuum state, the substrate 10 is carried into the reaction chamber 31 in the vacuum chamber 2 and placed on the heater 15. Here, before the substrate 10 is placed, the heater 15 is positioned below the vacuum chamber 2. That is, the space between the heater 15 and the shower plate 5 is wide, and the substrate 10 is held in a state where it can be easily placed on the heater 15.

  Subsequently, after the substrate 10 is placed on the heater 15, a lifting mechanism (not shown) is activated to move the substrate 10 placed on the heater 15 in the direction in which the shower plate 5 is disposed. The substrate 10 is raised and the distance between the substrate 10 and the shower plate 5 is maintained at an appropriate distance for film formation. Further, the heater 15 is driven to adjust the substrate 10 to a desired temperature.

  Subsequently, the source gas is introduced into the gas introduction chamber 32 from the source gas supply unit 21 through the gas introduction pipe 7 and the gas introduction port 42. Then, the gas introduction chamber 32 is filled with the raw material gas, passes through the gas flow path (through hole 61 and through hole 62) formed in the cooling device 50, and then passes through the gas outlet 6 of the shower plate 5 to form a vacuum chamber. The raw material gas is jetted into the reaction chamber 31 in 2.

  Here, pure water maintained at a temperature of about 30 ° C. to 80 ° C. is circulated through the cooling pipe 53 of the cooling device 50. By circulating pure water, the temperature of the shower plate 5 and the gas introduction chamber 32 is maintained at an appropriate temperature.

  Subsequently, the RF power source 9 is activated and a high frequency voltage of 27.12 MHz, for example, is applied to the electrode flange 4. At this time, the electrode flange 4 is insulated from the vacuum chamber 2 via the insulating flange 81, and the vacuum chamber 2 is connected to the ground potential.

  Then, a high frequency voltage is applied between the shower plate 5 and the heater 15 to generate a discharge, and plasma is generated between the shower plate 5 provided on the electrode flange 4 and the film formation surface 10a of the substrate 10. . The source gas is decomposed (plasmaized) in the plasma generated in this way, and a vapor phase growth reaction occurs on the film formation surface 10a of the substrate 10, whereby a thin film is formed. The high frequency voltage is transmitted to the shower plate 5 through the outer surface of the electrode flange 4.

  Here, in this embodiment, the cooling device 50 is provided so that the temperature in the reaction chamber 31 and the gas introduction chamber 32 is maintained at a predetermined temperature, so that batch processing is continuously performed on a plurality of substrates 10. Even if the film is formed by the above method, the film can be formed on the film formation surface 10a of the substrate 10 under substantially uniform film formation conditions. That is, even when film formation is continuously performed on a plurality of substrates 10 by batch processing, it is possible to suppress the temperature of the reaction chamber 31 and the gas introduction chamber 32 from rising more than necessary, and all the substrates 10 can be suppressed. The film can be formed with a substantially uniform film quality. Therefore, even if film formation is performed on the film formation surface 10a of the substrate 10 by continuous batch processing, it is possible to provide the substrate 10 having a certain quality that does not differ in film quality from one substrate 10 to another.

  When the film formation on the substrate 10 is repeated several times, the film forming material adheres to the inner wall surface 33 of the vacuum chamber 2 and the like, so that the inside of the vacuum chamber 2 is periodically cleaned. In the cleaning, the fluorine gas supplied from the fluorine gas supply unit 22 provided in the gas introduction pipe 8 connected to the vacuum chamber 2 is decomposed by the radical source 23, and the fluorine radicals formed thereby are formed into a film in the vacuum chamber 2. The deposits are removed by supplying to the space and causing a chemical reaction.

  According to the present embodiment, since the cooling device 50 is provided in the gas introduction chamber 32, it is possible to suppress the temperature in the processing chamber 3 from being increased by the cooling device 50. Therefore, it is possible to suppress deterioration of the film quality when the film is continuously formed on the substrate 10.

  In addition, by flowing cooling water (pure water) through the cooling pipe 53 of the cooling device 50, heat generated in the processing chamber 3 can be absorbed. Therefore, the temperature rise in the processing chamber 3 can be suppressed. In addition, by disposing the heat transfer plate 51 between the shower plate 5 and the cooling plate 52, the heat of the shower plate 5 can be absorbed more effectively.

  Further, since the flow rate of the cooling water flowing through the cooling pipe 53 is variable, the temperature in the processing chamber 3 can be kept substantially constant. Therefore, when the film is continuously formed on the substrate 10, the temperature in the reaction chamber 31 can be kept substantially uniform, so that the film quality can be kept substantially uniform.

  Furthermore, since the cooling plate 52 is configured to be divided into the first cooling plate 52A and the second cooling plate 52B, and the cooling pipe 53 can be arranged between them, the cooling pipe 53 can be reliably supported, Maintainability can be improved. Further, since the first cooling plate 52A and the second cooling plate 52B are arranged so as to cover the cooling pipe 53, a large heat absorption area can be ensured. Therefore, the temperature rise in the processing chamber 3 can be more effectively suppressed.

Note that the present invention is not limited to the above-described embodiments, and includes various modifications made to the above-described embodiments without departing from the spirit of the present invention. That is, the specific shapes, configurations, and the like given in the embodiment are merely examples, and can be changed as appropriate.
For example, in the present embodiment, the case where only the cooling device is disposed in the plasma processing apparatus has been described. However, as in the conventional case, a cooling pipe is also provided in the electrode flange, and a shower plate or You may comprise so that the temperature in a process chamber may be adjusted.

  DESCRIPTION OF SYMBOLS 1 ... Plasma processing apparatus 3 ... Processing chamber 5 ... Shower plate 10 ... Substrate 31 ... Reaction chamber 32 ... Gas introduction chamber 50 ... Cooling device 51 ... Heat-transfer plate 52 ... Cooling plate 52A ... First cooling plate 52B ... Second cooling plate 53 ... Cooling pipe 61 ... Through hole (gas flow path) 62 ... Through hole (gas flow path)

Claims (4)

  1. A processing chamber configured to be capable of applying an AC voltage by introducing a raw material gas; a shower plate that divides the processing chamber into a gas introducing chamber into which the raw material gas is introduced; and a reaction chamber in which a substrate is disposed. In a plasma processing apparatus comprising:
    A cooling device is provided in the gas introduction chamber ,
    The cooling device includes a cooling pipe through which cooling water can flow, a cooling plate for supporting the cooling pipe, and a heat transfer plate disposed between the cooling plate and the shower plate, The cooling plate and the heat transfer plate are configured so that a gas flow path for allowing the source gas to pass therethrough is formed, and the flow rate of the cooling water flowing through the cooling pipe is variable.
    The through hole α of the heat transfer plate is formed so that one through hole α corresponds to a plurality of gas outlets of the shower plate, and the cooling plate includes the heat transfer plate. A plasma processing apparatus, wherein a plurality of through holes β are formed at positions corresponding to the through holes α .
  2. The openings of the plurality of gas jets formed in the shower plate and the openings of the plurality of through holes β formed in the cooling plate communicate with the through hole α of the heat transfer plate. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is disposed at different positions when viewed from the overlapping direction of the plate, the heat transfer plate, and the shower plate .
  3. The openings of the plurality of gas outlets formed in the shower plate and the openings of the plurality of through holes β formed in the cooling plate communicate with the through hole α of the heat transfer plate. 3. The plasma processing apparatus according to claim 2, wherein the outlet opening is distributed in a wider range with respect to the through hole α than the opening of the through hole β . 4.
  4. The cooling plate is configured to be divided into a first cooling plate and a second cooling plate, and the cooling pipe is configured to be disposed between the first cooling plate and the second cooling plate. The plasma processing apparatus according to any one of claims 1 to 3 .
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JPH0758101A (en) * 1993-08-09 1995-03-03 Hitachi Electron Eng Co Ltd Formation of silicon oxide film and cvd device
JP2956494B2 (en) * 1994-10-26 1999-10-04 住友金属工業株式会社 The plasma processing apparatus
JPH08218171A (en) * 1995-02-08 1996-08-27 Nippon Sanso Kk Shower head-type cvd device
JPH10310866A (en) * 1997-05-12 1998-11-24 Shin Etsu Chem Co Ltd Production of silicon dioxide coating
JP2000306889A (en) * 1999-04-21 2000-11-02 Hitachi Ltd Dry etching system
JP4082720B2 (en) * 2001-09-10 2008-04-30 キヤノンアネルバ株式会社 Substrate surface treatment equipment
JP4493932B2 (en) * 2003-05-13 2010-06-30 東京エレクトロン株式会社 Upper electrode and plasma processing apparatus
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